Pagina 22 - Prodotti GeneSiC Semiconductor - Diodi - Raddrizzatori - Singoli | Heisener Electronics
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Prodotti GeneSiC Semiconductor - Diodi - Raddrizzatori - Singoli

Record 792
Pagina  22/27
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
MBRH20020
GeneSiC Semiconductor

DIODE MODULE 20V 200A D-67

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20V
  • Current - Average Rectified (Io): 200A
  • Voltage - Forward (Vf) (Max) @ If: 650mV @ 200A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5mA @ 20V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: D-67
  • Supplier Device Package: D-67
  • Operating Temperature - Junction: -
pacchetto: D-67
Azione6.784
20V
200A
650mV @ 200A
Fast Recovery =< 500ns, > 200mA (Io)
-
5mA @ 20V
-
Chassis Mount
D-67
D-67
-
MBRH120200R
GeneSiC Semiconductor

DIODE MODULE 200V 120A D-67

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 120A
  • Voltage - Forward (Vf) (Max) @ If: 920mV @ 120A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: D-67
  • Supplier Device Package: D-67
  • Operating Temperature - Junction: -
pacchetto: D-67
Azione5.712
200V
120A
920mV @ 120A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 200V
-
Chassis Mount
D-67
D-67
-
MBRH120200
GeneSiC Semiconductor

DIODE MODULE 200V 120A D-67

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 120A
  • Voltage - Forward (Vf) (Max) @ If: 920mV @ 120A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: D-67
  • Supplier Device Package: D-67
  • Operating Temperature - Junction: -
pacchetto: D-67
Azione2.100
200V
120A
920mV @ 120A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 200V
-
Chassis Mount
D-67
D-67
-
MBRH120150R
GeneSiC Semiconductor

DIODE MODULE 150V 120A D-67

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 150V
  • Current - Average Rectified (Io): 120A
  • Voltage - Forward (Vf) (Max) @ If: 880mV @ 120A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 150V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: D-67
  • Supplier Device Package: D-67
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: D-67
Azione3.312
150V
120A
880mV @ 120A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 150V
-
Chassis Mount
D-67
D-67
-55°C ~ 150°C
MBRH120150
GeneSiC Semiconductor

DIODE MODULE 150V 120A D-67

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 150V
  • Current - Average Rectified (Io): 120A
  • Voltage - Forward (Vf) (Max) @ If: 880mV @ 120A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 150V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: D-67
  • Supplier Device Package: D-67
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: D-67
Azione3.328
150V
120A
880mV @ 120A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 150V
-
Chassis Mount
D-67
D-67
-55°C ~ 150°C
MBRH120100R
GeneSiC Semiconductor

DIODE MODULE 100V 120A D-67

  • Diode Type: Schottky, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 120A
  • Voltage - Forward (Vf) (Max) @ If: 840mV @ 120A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 4mA @ 20V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: D-67
  • Supplier Device Package: D-67
  • Operating Temperature - Junction: -
pacchetto: D-67
Azione3.616
100V
120A
840mV @ 120A
Fast Recovery =< 500ns, > 200mA (Io)
-
4mA @ 20V
-
Chassis Mount
D-67
D-67
-
MBRH120100
GeneSiC Semiconductor

DIODE MODULE 100V 120A D-67

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 120A
  • Voltage - Forward (Vf) (Max) @ If: 840mV @ 120A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 4mA @ 20V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: D-67
  • Supplier Device Package: D-67
  • Operating Temperature - Junction: -
pacchetto: D-67
Azione5.776
100V
120A
840mV @ 120A
Fast Recovery =< 500ns, > 200mA (Io)
-
4mA @ 20V
-
Chassis Mount
D-67
D-67
-
MBRH12080R
GeneSiC Semiconductor

DIODE MODULE 80V 120A D-67

  • Diode Type: Schottky, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 80V
  • Current - Average Rectified (Io): 120A
  • Voltage - Forward (Vf) (Max) @ If: 840mV @ 120V
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 4mA @ 20V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: D-67
  • Supplier Device Package: D-67
  • Operating Temperature - Junction: -
pacchetto: D-67
Azione4.160
80V
120A
840mV @ 120V
Fast Recovery =< 500ns, > 200mA (Io)
-
4mA @ 20V
-
Chassis Mount
D-67
D-67
-
MBRH12080
GeneSiC Semiconductor

DIODE MODULE 80V 120A D-67

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 80V
  • Current - Average Rectified (Io): 120A
  • Voltage - Forward (Vf) (Max) @ If: 840mV @ 120V
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 4mA @ 20V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: D-67
  • Supplier Device Package: D-67
  • Operating Temperature - Junction: -
pacchetto: D-67
Azione6.816
80V
120A
840mV @ 120V
Fast Recovery =< 500ns, > 200mA (Io)
-
4mA @ 20V
-
Chassis Mount
D-67
D-67
-
MBRH12060R
GeneSiC Semiconductor

DIODE MODULE 60V 120A D-67

  • Diode Type: Schottky, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 60V
  • Current - Average Rectified (Io): 120A
  • Voltage - Forward (Vf) (Max) @ If: 750mV @ 120A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 4mA @ 20V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: D-67
  • Supplier Device Package: D-67
  • Operating Temperature - Junction: -
pacchetto: D-67
Azione4.720
60V
120A
750mV @ 120A
Fast Recovery =< 500ns, > 200mA (Io)
-
4mA @ 20V
-
Chassis Mount
D-67
D-67
-
MBRH12060
GeneSiC Semiconductor

DIODE MODULE 60V 120A D-67

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60V
  • Current - Average Rectified (Io): 120A
  • Voltage - Forward (Vf) (Max) @ If: 750mV @ 120A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 4mA @ 20V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: D-67
  • Supplier Device Package: D-67
  • Operating Temperature - Junction: -
pacchetto: D-67
Azione7.408
60V
120A
750mV @ 120A
Fast Recovery =< 500ns, > 200mA (Io)
-
4mA @ 20V
-
Chassis Mount
D-67
D-67
-
MBRH12045R
GeneSiC Semiconductor

DIODE MODULE 45V 120A D-67

  • Diode Type: Schottky, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io): 120A
  • Voltage - Forward (Vf) (Max) @ If: 700mV @ 120A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 45V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: D-67 HALF-PAK
  • Supplier Device Package: D-67
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: D-67 HALF-PAK
Azione3.296
45V
120A
700mV @ 120A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 45V
-
Chassis Mount
D-67 HALF-PAK
D-67
-55°C ~ 150°C
MBRH12045
GeneSiC Semiconductor

DIODE MODULE 45V 120A D-67

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io): 120A
  • Voltage - Forward (Vf) (Max) @ If: 650mV @ 120A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 4mA @ 20V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: D-67
  • Supplier Device Package: D-67
  • Operating Temperature - Junction: -
pacchetto: D-67
Azione3.504
45V
120A
650mV @ 120A
Fast Recovery =< 500ns, > 200mA (Io)
-
4mA @ 20V
-
Chassis Mount
D-67
D-67
-
MBRH12035R
GeneSiC Semiconductor

DIODE MODULE 35V 120A D-67

  • Diode Type: Schottky, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 35V
  • Current - Average Rectified (Io): 120A
  • Voltage - Forward (Vf) (Max) @ If: 650mV @ 120A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 4mA @ 20V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: D-67
  • Supplier Device Package: D-67
  • Operating Temperature - Junction: -
pacchetto: D-67
Azione7.808
35V
120A
650mV @ 120A
Fast Recovery =< 500ns, > 200mA (Io)
-
4mA @ 20V
-
Chassis Mount
D-67
D-67
-
MBRH12035
GeneSiC Semiconductor

DIODE MODULE 35V 120A D-67

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 35V
  • Current - Average Rectified (Io): 120A
  • Voltage - Forward (Vf) (Max) @ If: 650mV @ 120A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 4mA @ 20V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: D-67
  • Supplier Device Package: D-67
  • Operating Temperature - Junction: -
pacchetto: D-67
Azione4.832
35V
120A
650mV @ 120A
Fast Recovery =< 500ns, > 200mA (Io)
-
4mA @ 20V
-
Chassis Mount
D-67
D-67
-
MBRH12030R
GeneSiC Semiconductor

DIODE MODULE 30V 120A D-67

  • Diode Type: Schottky, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 120A
  • Voltage - Forward (Vf) (Max) @ If: 650mV @ 120A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 4mA @ 20V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: D-67
  • Supplier Device Package: D-67
  • Operating Temperature - Junction: -
pacchetto: D-67
Azione2.336
30V
120A
650mV @ 120A
Fast Recovery =< 500ns, > 200mA (Io)
-
4mA @ 20V
-
Chassis Mount
D-67
D-67
-
MBRH12030
GeneSiC Semiconductor

DIODE MODULE 30V 120A D-67

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 120A
  • Voltage - Forward (Vf) (Max) @ If: 650mV @ 120A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 4mA @ 20V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: D-67
  • Supplier Device Package: D-67
  • Operating Temperature - Junction: -
pacchetto: D-67
Azione4.624
30V
120A
650mV @ 120A
Fast Recovery =< 500ns, > 200mA (Io)
-
4mA @ 20V
-
Chassis Mount
D-67
D-67
-
MBRH12020R
GeneSiC Semiconductor

DIODE MODULE 20V 120A D-67

  • Diode Type: Schottky, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 20V
  • Current - Average Rectified (Io): 120A
  • Voltage - Forward (Vf) (Max) @ If: 650mV @ 120A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 4mA @ 20V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: D-67
  • Supplier Device Package: D-67
  • Operating Temperature - Junction: -
pacchetto: D-67
Azione6.512
20V
120A
650mV @ 120A
Fast Recovery =< 500ns, > 200mA (Io)
-
4mA @ 20V
-
Chassis Mount
D-67
D-67
-
MBRH12020
GeneSiC Semiconductor

DIODE MODULE 20V 120A D-67

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20V
  • Current - Average Rectified (Io): 120A
  • Voltage - Forward (Vf) (Max) @ If: 650mV @ 120A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 4mA @ 20V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: D-67
  • Supplier Device Package: D-67
  • Operating Temperature - Junction: -
pacchetto: D-67
Azione6.560
20V
120A
650mV @ 120A
Fast Recovery =< 500ns, > 200mA (Io)
-
4mA @ 20V
-
Chassis Mount
D-67
D-67
-
MBRH12040
GeneSiC Semiconductor

DIODE MODULE 40V 120A D67

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 120A
  • Voltage - Forward (Vf) (Max) @ If: 650mV @ 120A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 4mA @ 20V
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: D-67
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
pacchetto: D-67
Azione5.792
40V
120A
650mV @ 120A
Fast Recovery =< 500ns, > 200mA (Io)
-
4mA @ 20V
-
-
D-67
-
-
GKR130/18
GeneSiC Semiconductor

DIODE GP 1.8KV 165A DO205AA

  • Diode Type: Standard, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 1800V
  • Current - Average Rectified (Io): 165A
  • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 60A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 22mA @ 1800V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-205AA, DO-8, Stud
  • Supplier Device Package: DO-205AA (DO-8)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: DO-205AA, DO-8, Stud
Azione7.200
1800V
165A
1.5V @ 60A
Standard Recovery >500ns, > 200mA (Io)
-
22mA @ 1800V
-
Chassis, Stud Mount
DO-205AA, DO-8, Stud
DO-205AA (DO-8)
-55°C ~ 150°C
GKR130/16
GeneSiC Semiconductor

DIODE GEN PURP 1.6KV 165A DO205

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600V
  • Current - Average Rectified (Io): 165A
  • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 60A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 22mA @ 1600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-205AA, DO-8, Stud
  • Supplier Device Package: DO-205AA (DO-8)
  • Operating Temperature - Junction: -40°C ~ 180°C
pacchetto: DO-205AA, DO-8, Stud
Azione3.232
1600V
165A
1.5V @ 60A
Standard Recovery >500ns, > 200mA (Io)
-
22mA @ 1600V
-
Chassis, Stud Mount
DO-205AA, DO-8, Stud
DO-205AA (DO-8)
-40°C ~ 180°C
GKR130/14
GeneSiC Semiconductor

DIODE GEN PURP 1.4KV 165A DO205

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1400V
  • Current - Average Rectified (Io): 165A
  • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 60A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 22mA @ 1400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-205AA, DO-8, Stud
  • Supplier Device Package: DO-205AA (DO-8)
  • Operating Temperature - Junction: -40°C ~ 180°C
pacchetto: DO-205AA, DO-8, Stud
Azione7.312
1400V
165A
1.5V @ 60A
Standard Recovery >500ns, > 200mA (Io)
-
22mA @ 1400V
-
Chassis, Stud Mount
DO-205AA, DO-8, Stud
DO-205AA (DO-8)
-40°C ~ 180°C
GKR130/12
GeneSiC Semiconductor

DIODE GEN PURP 1.2KV 165A DO205

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 165A
  • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 60A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 22mA @ 1200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-205AA, DO-8, Stud
  • Supplier Device Package: DO-205AA (DO-8)
  • Operating Temperature - Junction: -40°C ~ 180°C
pacchetto: DO-205AA, DO-8, Stud
Azione3.312
1200V
165A
1.5V @ 60A
Standard Recovery >500ns, > 200mA (Io)
-
22mA @ 1200V
-
Chassis, Stud Mount
DO-205AA, DO-8, Stud
DO-205AA (DO-8)
-40°C ~ 180°C
GKR130/08
GeneSiC Semiconductor

DIODE GEN PURP 800V 165A DO205AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 165A
  • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 60A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 22mA @ 800V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-205AA, DO-8, Stud
  • Supplier Device Package: DO-205AA (DO-8)
  • Operating Temperature - Junction: -40°C ~ 180°C
pacchetto: DO-205AA, DO-8, Stud
Azione6.080
800V
165A
1.5V @ 60A
Standard Recovery >500ns, > 200mA (Io)
-
22mA @ 800V
-
Chassis, Stud Mount
DO-205AA, DO-8, Stud
DO-205AA (DO-8)
-40°C ~ 180°C
GKR130/04
GeneSiC Semiconductor

DIODE GEN PURP 400V 165A DO205AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 165A
  • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 60A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 22mA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-205AA, DO-8, Stud
  • Supplier Device Package: DO-205AA (DO-8)
  • Operating Temperature - Junction: -40°C ~ 180°C
pacchetto: DO-205AA, DO-8, Stud
Azione2.256
400V
165A
1.5V @ 60A
Standard Recovery >500ns, > 200mA (Io)
-
22mA @ 400V
-
Chassis, Stud Mount
DO-205AA, DO-8, Stud
DO-205AA (DO-8)
-40°C ~ 180°C
1N4596R
GeneSiC Semiconductor

DIODE GEN PURP REV 1.4KV DO205AA

  • Diode Type: Standard, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 1400V
  • Current - Average Rectified (Io): 150A
  • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 150A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 3.5mA @ 1400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-205AA, DO-8, Stud
  • Supplier Device Package: DO-205AA (DO-8)
  • Operating Temperature - Junction: -60°C ~ 200°C
pacchetto: DO-205AA, DO-8, Stud
Azione3.648
1400V
150A
1.5V @ 150A
Standard Recovery >500ns, > 200mA (Io)
-
3.5mA @ 1400V
-
Chassis, Stud Mount
DO-205AA, DO-8, Stud
DO-205AA (DO-8)
-60°C ~ 200°C
1N4596
GeneSiC Semiconductor

DIODE GEN PURP 1.4KV 150A DO205

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1400V
  • Current - Average Rectified (Io): 150A
  • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 150A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 3.5mA @ 1400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-205AA, DO-8, Stud
  • Supplier Device Package: DO-205AA (DO-8)
  • Operating Temperature - Junction: -60°C ~ 200°C
pacchetto: DO-205AA, DO-8, Stud
Azione3.296
1400V
150A
1.5V @ 150A
Standard Recovery >500ns, > 200mA (Io)
-
3.5mA @ 1400V
-
Chassis, Stud Mount
DO-205AA, DO-8, Stud
DO-205AA (DO-8)
-60°C ~ 200°C
1N4595
GeneSiC Semiconductor

DIODE GEN PURP 1.2KV 150A DO205

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 150A
  • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 150A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 4mA @ 1200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-205AA, DO-8, Stud
  • Supplier Device Package: DO-205AA (DO-8)
  • Operating Temperature - Junction: -60°C ~ 200°C
pacchetto: DO-205AA, DO-8, Stud
Azione2.288
1200V
150A
1.5V @ 150A
Standard Recovery >500ns, > 200mA (Io)
-
4mA @ 1200V
-
Chassis, Stud Mount
DO-205AA, DO-8, Stud
DO-205AA (DO-8)
-60°C ~ 200°C
1N4594R
GeneSiC Semiconductor

DIODE GEN PURP REV 1KV DO205AA

  • Diode Type: Standard, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 150A
  • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 150A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 4.5mA @ 1000V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-205AA, DO-8, Stud
  • Supplier Device Package: DO-205AA (DO-8)
  • Operating Temperature - Junction: -60°C ~ 200°C
pacchetto: DO-205AA, DO-8, Stud
Azione5.072
1000V
150A
1.5V @ 150A
Standard Recovery >500ns, > 200mA (Io)
-
4.5mA @ 1000V
-
Chassis, Stud Mount
DO-205AA, DO-8, Stud
DO-205AA (DO-8)
-60°C ~ 200°C