Prodotti GeneSiC Semiconductor - Transistor - IGBT - Moduli

Immagine	Numero di parte	Produttore	Descrizione	pacchetto	Azione	Quantità	Configuration	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max)	Power - Max	Vce(on) (Max) @ Vge, Ic	Current - Collector Cutoff (Max)	Input Capacitance (Cies) @ Vce	Input	NTC Thermistor	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
	GB100XCP12-227	GeneSiC Semiconductor	IGBT 1200V 100A SOT-227 IGBT Type: PT Configuration: Single Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 100A Power - Max: - Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 100A Current - Collector Cutoff (Max): 1mA Input Capacitance (Cies) @ Vce: 8.55nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: SOT-227-4 Supplier Device Package: SOT-227	pacchetto: SOT-227-4	Azione6.768		Single	1200V	100A	-	2V @ 15V, 100A	1mA	8.55nF @ 25V	Standard	No	-40°C ~ 175°C (TJ)	Chassis Mount	SOT-227-4	SOT-227