Prodotti GeneSiC Semiconductor - Transistor - IGBT - Singoli

Immagine	Numero di parte	Produttore	Descrizione	pacchetto	Azione	Quantità	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max)	Current - Collector Pulsed (Icm)	Vce(on) (Max) @ Vge, Ic	Power - Max	Switching Energy	Input Type	Gate Charge	Td (on/off) @ 25°C	Test Condition	Reverse Recovery Time (trr)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
	GA35XCP12-247	GeneSiC Semiconductor	IGBT 1200V SOT247 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): 35A Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 35A Power - Max: - Switching Energy: 2.66mJ (on), 4.35mJ (off) Input Type: Standard Gate Charge: 50nC Td (on/off) @ 25°C: - Test Condition: 800V, 35A, 22 Ohm, 15V Reverse Recovery Time (trr): 36ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AB	pacchetto: TO-247-3	Azione4.224		1200V	-	35A	3V @ 15V, 35A	-	2.66mJ (on), 4.35mJ (off)	Standard	50nC	-	800V, 35A, 22 Ohm, 15V	36ns	-40°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247AB