Pagina 6 - Prodotti IXYS - Diodi - Raddrizzatori - Singoli | Heisener Electronics
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Prodotti IXYS - Diodi - Raddrizzatori - Singoli

Record 504
Pagina  6/17
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
DAA10EM1800PZ-TRL
IXYS

DIODE AVAL 1.8KV 10A TO263HV

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 1800 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.21 V @ 10 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 1800 V
  • Capacitance @ Vr, F: 4pF @ 400V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263HV
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: -
Request a Quote
1800 V
10A
1.21 V @ 10 A
Standard Recovery >500ns, > 200mA (Io)
-
10 µA @ 1800 V
4pF @ 400V, 1MHz
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263HV
-55°C ~ 175°C
DAA10EM1800PZ-TUB
IXYS

DIODE AVAL 1.8KV 10A TO263HV

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 1800 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.21 V @ 10 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 1800 V
  • Capacitance @ Vr, F: 4pF @ 400V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263HV
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: -
Request a Quote
1800 V
10A
1.21 V @ 10 A
Standard Recovery >500ns, > 200mA (Io)
-
10 µA @ 1800 V
4pF @ 400V, 1MHz
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263HV
-55°C ~ 175°C
W1411LC360
IXYS

DIODE GEN PURP 3.6KV 1411A W4

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 3600 V
  • Current - Average Rectified (Io): 1411A
  • Voltage - Forward (Vf) (Max) @ If: 2 V @ 2870 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 30 mA @ 3600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AB, B-PUK
  • Supplier Device Package: W4
  • Operating Temperature - Junction: -55°C ~ 160°C
pacchetto: -
Request a Quote
3600 V
1411A
2 V @ 2870 A
Standard Recovery >500ns, > 200mA (Io)
-
30 mA @ 3600 V
-
Clamp On
DO-200AB, B-PUK
W4
-55°C ~ 160°C
W1411LC320
IXYS

DIODE GEN PURP 3.2KV 1411A W4

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 3200 V
  • Current - Average Rectified (Io): 1411A
  • Voltage - Forward (Vf) (Max) @ If: 2 V @ 2870 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 30 mA @ 3200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AB, B-PUK
  • Supplier Device Package: W4
  • Operating Temperature - Junction: -55°C ~ 160°C
pacchetto: -
Request a Quote
3200 V
1411A
2 V @ 2870 A
Standard Recovery >500ns, > 200mA (Io)
-
30 mA @ 3200 V
-
Clamp On
DO-200AB, B-PUK
W4
-55°C ~ 160°C
M0659LC450
IXYS

DIODE GEN PURP 4.5KV 659A W4

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 4500 V
  • Current - Average Rectified (Io): 659A
  • Voltage - Forward (Vf) (Max) @ If: 3 V @ 1400 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 4.2 µs
  • Current - Reverse Leakage @ Vr: 100 mA @ 4500 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AB, B-PUK
  • Supplier Device Package: W4
  • Operating Temperature - Junction: -40°C ~ 125°C
pacchetto: -
Request a Quote
4500 V
659A
3 V @ 1400 A
Standard Recovery >500ns, > 200mA (Io)
4.2 µs
100 mA @ 4500 V
-
Clamp On
DO-200AB, B-PUK
W4
-40°C ~ 125°C
DPG30I600AHA
IXYS

POWER DIODE DISCRETES-FRED TO-24

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
E1250HC45E
IXYS

DIODE GEN PURP 4.5KV 1355A W122

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 4500 V
  • Current - Average Rectified (Io): 1355A
  • Voltage - Forward (Vf) (Max) @ If: 2.07 V @ 1250 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.2 µs
  • Current - Reverse Leakage @ Vr: 1 mA @ 4500 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: DO-200AD
  • Supplier Device Package: W122
  • Operating Temperature - Junction: -
pacchetto: -
Request a Quote
4500 V
1355A
2.07 V @ 1250 A
Standard Recovery >500ns, > 200mA (Io)
1.2 µs
1 mA @ 4500 V
-
Chassis Mount
DO-200AD
W122
-
DMA50P1200HB
IXYS

DIODE GEN PURP 1.2KV 50A TO247

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 50A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 50 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 40 µA @ 1200 V
  • Capacitance @ Vr, F: 19pF @ 400V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 (IXTH)
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: -
Request a Quote
1200 V
50A
1.3 V @ 50 A
Standard Recovery >500ns, > 200mA (Io)
-
40 µA @ 1200 V
19pF @ 400V, 1MHz
Through Hole
TO-247-3
TO-247 (IXTH)
-55°C ~ 175°C
W0642WC200
IXYS

DIODE GEN PURP 2KV 642A W1

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2000 V
  • Current - Average Rectified (Io): 642A
  • Voltage - Forward (Vf) (Max) @ If: 2.37 V @ 1900 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 15 µs
  • Current - Reverse Leakage @ Vr: 15 mA @ 2000 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AB, A-PUK
  • Supplier Device Package: W1
  • Operating Temperature - Junction: -40°C ~ 180°C
pacchetto: -
Request a Quote
2000 V
642A
2.37 V @ 1900 A
Standard Recovery >500ns, > 200mA (Io)
15 µs
15 mA @ 2000 V
-
Clamp On
DO-200AB, A-PUK
W1
-40°C ~ 180°C
W0642WC160
IXYS

DIODE GEN PURP 1.6KV 642A W1

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600 V
  • Current - Average Rectified (Io): 642A
  • Voltage - Forward (Vf) (Max) @ If: 2.37 V @ 1900 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 15 µs
  • Current - Reverse Leakage @ Vr: 15 mA @ 1600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AB, A-PUK
  • Supplier Device Package: W1
  • Operating Temperature - Junction: -40°C ~ 180°C
pacchetto: -
Request a Quote
1600 V
642A
2.37 V @ 1900 A
Standard Recovery >500ns, > 200mA (Io)
15 µs
15 mA @ 1600 V
-
Clamp On
DO-200AB, A-PUK
W1
-40°C ~ 180°C
M0859LC140
IXYS

DIODE GEN PURP 1.4KV 859A W4

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1400 V
  • Current - Average Rectified (Io): 859A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1750 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 3 µs
  • Current - Reverse Leakage @ Vr: 50 mA @ 1400 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AB, B-PUK
  • Supplier Device Package: W4
  • Operating Temperature - Junction: -40°C ~ 125°C
pacchetto: -
Request a Quote
1400 V
859A
1.7 V @ 1750 A
Standard Recovery >500ns, > 200mA (Io)
3 µs
50 mA @ 1400 V
-
Clamp On
DO-200AB, B-PUK
W4
-40°C ~ 125°C
M0437WC140
IXYS

DIODE GEN PURP 1.4KV 437A W1

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1400 V
  • Current - Average Rectified (Io): 437A
  • Voltage - Forward (Vf) (Max) @ If: 1.47 V @ 635 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 20 mA @ 1400 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AB, A-PUK
  • Supplier Device Package: W1
  • Operating Temperature - Junction: -40°C ~ 125°C
pacchetto: -
Request a Quote
1400 V
437A
1.47 V @ 635 A
Standard Recovery >500ns, > 200mA (Io)
-
20 mA @ 1400 V
-
Clamp On
DO-200AB, A-PUK
W1
-40°C ~ 125°C
M0437WC080
IXYS

DIODE GEN PURP 80V 437A W1

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 80 V
  • Current - Average Rectified (Io): 437A
  • Voltage - Forward (Vf) (Max) @ If: 1.47 V @ 635 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 20 mA @ 80 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AB, A-PUK
  • Supplier Device Package: W1
  • Operating Temperature - Junction: -40°C ~ 125°C
pacchetto: -
Request a Quote
80 V
437A
1.47 V @ 635 A
Standard Recovery >500ns, > 200mA (Io)
-
20 mA @ 80 V
-
Clamp On
DO-200AB, A-PUK
W1
-40°C ~ 125°C
DCG17P1200HR
IXYS

DIODE SCHOTTKY 1.2KV 18A ISO247

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 18A
  • Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
  • Capacitance @ Vr, F: 1500pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: ISO247
  • Operating Temperature - Junction: -40°C ~ 150°C
pacchetto: -
Request a Quote
1200 V
18A
1.8 V @ 20 A
Fast Recovery =< 500ns, > 200mA (Io)
-
200 µA @ 1200 V
1500pF @ 0V, 1MHz
Through Hole
TO-247-3
ISO247
-40°C ~ 150°C
DSEI12-06AS-TRL
IXYS

DIODE GEN PURP 600V 14A TO263AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 14A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 50 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AA
  • Operating Temperature - Junction: -40°C ~ 150°C
pacchetto: -
Request a Quote
600 V
14A
1.7 V @ 16 A
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
50 µA @ 600 V
-
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263AA
-40°C ~ 150°C
DSEI12-06AS-TUB
IXYS

DIODE GEN PURP 600V 14A TO263AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 14A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 50 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AA
  • Operating Temperature - Junction: -40°C ~ 150°C
pacchetto: -
Azione177
600 V
14A
1.7 V @ 16 A
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
50 µA @ 600 V
-
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263AA
-40°C ~ 150°C
W1856NC460
IXYS

DIODE GEN PURP 4.6KV 1856A W5

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 4600 V
  • Current - Average Rectified (Io): 1856A
  • Voltage - Forward (Vf) (Max) @ If: 2.95 V @ 5550 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 36 µs
  • Current - Reverse Leakage @ Vr: 50 mA @ 4600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AC, K-PUK
  • Supplier Device Package: W5
  • Operating Temperature - Junction: -40°C ~ 160°C
pacchetto: -
Request a Quote
4600 V
1856A
2.95 V @ 5550 A
Standard Recovery >500ns, > 200mA (Io)
36 µs
50 mA @ 4600 V
-
Clamp On
DO-200AC, K-PUK
W5
-40°C ~ 160°C
W1856NC480
IXYS

DIODE GEN PURP 4.8KV 1856A W5

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 4800 V
  • Current - Average Rectified (Io): 1856A
  • Voltage - Forward (Vf) (Max) @ If: 2.95 V @ 5550 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 36 µs
  • Current - Reverse Leakage @ Vr: 50 mA @ 4800 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AC, K-PUK
  • Supplier Device Package: W5
  • Operating Temperature - Junction: -40°C ~ 160°C
pacchetto: -
Request a Quote
4800 V
1856A
2.95 V @ 5550 A
Standard Recovery >500ns, > 200mA (Io)
36 µs
50 mA @ 4800 V
-
Clamp On
DO-200AC, K-PUK
W5
-40°C ~ 160°C
M0914LC200
IXYS

DIODE GEN PURP 2KV 914A W4

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2000 V
  • Current - Average Rectified (Io): 914A
  • Voltage - Forward (Vf) (Max) @ If: 4.1 V @ 3770 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 3.2 µs
  • Current - Reverse Leakage @ Vr: 50 mA @ 2000 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AB, B-PUK
  • Supplier Device Package: W4
  • Operating Temperature - Junction: -40°C ~ 150°C
pacchetto: -
Request a Quote
2000 V
914A
4.1 V @ 3770 A
Standard Recovery >500ns, > 200mA (Io)
3.2 µs
50 mA @ 2000 V
-
Clamp On
DO-200AB, B-PUK
W4
-40°C ~ 150°C
M0358WC180
IXYS

DIODE GEN PURP 1.8KV 358A W1

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1800 V
  • Current - Average Rectified (Io): 358A
  • Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 750 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.4 µs
  • Current - Reverse Leakage @ Vr: 20 mA @ 1800 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AB, A-PUK
  • Supplier Device Package: W1
  • Operating Temperature - Junction: -40°C ~ 125°C
pacchetto: -
Request a Quote
1800 V
358A
2.1 V @ 750 A
Standard Recovery >500ns, > 200mA (Io)
1.4 µs
20 mA @ 1800 V
-
Clamp On
DO-200AB, A-PUK
W1
-40°C ~ 125°C
M0358WC120
IXYS

DIODE GEN PURP 1.2KV 358A W1

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 358A
  • Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 750 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.4 µs
  • Current - Reverse Leakage @ Vr: 20 mA @ 1200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AB, A-PUK
  • Supplier Device Package: W1
  • Operating Temperature - Junction: -40°C ~ 125°C
pacchetto: -
Request a Quote
1200 V
358A
2.1 V @ 750 A
Standard Recovery >500ns, > 200mA (Io)
1.4 µs
20 mA @ 1200 V
-
Clamp On
DO-200AB, A-PUK
W1
-40°C ~ 125°C
M2505MC200
IXYS

DIODE GEN PURP 2KV 2505A W54

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2000 V
  • Current - Average Rectified (Io): 2505A
  • Voltage - Forward (Vf) (Max) @ If: 991 mV @ 2000 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 7.6 µs
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AC, K-PUK
  • Supplier Device Package: W54
  • Operating Temperature - Junction: -
pacchetto: -
Request a Quote
2000 V
2505A
991 mV @ 2000 A
Standard Recovery >500ns, > 200mA (Io)
7.6 µs
-
-
Clamp On
DO-200AC, K-PUK
W54
-
M2505MC250
IXYS

DIODE GEN PURP 2.5KV 2505A W54

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2500 V
  • Current - Average Rectified (Io): 2505A
  • Voltage - Forward (Vf) (Max) @ If: 991 mV @ 2000 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 7.6 µs
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AC, K-PUK
  • Supplier Device Package: W54
  • Operating Temperature - Junction: -
pacchetto: -
Request a Quote
2500 V
2505A
991 mV @ 2000 A
Standard Recovery >500ns, > 200mA (Io)
7.6 µs
-
-
Clamp On
DO-200AC, K-PUK
W54
-
W2865HA680
IXYS

DIODE GEN PURP 6.8KV 4825A W121

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 6800 V
  • Current - Average Rectified (Io): 4825A
  • Voltage - Forward (Vf) (Max) @ If: 4.04 V @ 10000 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 53 µs
  • Current - Reverse Leakage @ Vr: 100 mA @ 6800 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: DO-200AD
  • Supplier Device Package: W121
  • Operating Temperature - Junction: -40°C ~ 150°C
pacchetto: -
Request a Quote
6800 V
4825A
4.04 V @ 10000 A
Standard Recovery >500ns, > 200mA (Io)
53 µs
100 mA @ 6800 V
-
Chassis Mount
DO-200AD
W121
-40°C ~ 150°C
W2865HA720
IXYS

DIODE GEN PURP 7200V 4825A W121

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 7200 V
  • Current - Average Rectified (Io): 4825A
  • Voltage - Forward (Vf) (Max) @ If: 4.04 V @ 10000 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 53 µs
  • Current - Reverse Leakage @ Vr: 100 mA @ 7200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: DO-200AD
  • Supplier Device Package: W121
  • Operating Temperature - Junction: -40°C ~ 150°C
pacchetto: -
Request a Quote
7200 V
4825A
4.04 V @ 10000 A
Standard Recovery >500ns, > 200mA (Io)
53 µs
100 mA @ 7200 V
-
Chassis Mount
DO-200AD
W121
-40°C ~ 150°C
DHG30IM600PC-TUB
IXYS

DIODE GEN PURP 600V 30A TO263

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 2.26 V @ 30 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 50 µA @ 600 V
  • Capacitance @ Vr, F: 16pF @ 400V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263 (D2PAK)
  • Operating Temperature - Junction: -55°C ~ 150°C
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600 V
30A
2.26 V @ 30 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
50 µA @ 600 V
16pF @ 400V, 1MHz
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263 (D2PAK)
-55°C ~ 150°C
DHG30IM600PC-TRL
IXYS

DIODE GEN PURP 600V 30A TO263AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 2.37 V @ 30 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 50 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AA
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: -
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600 V
30A
2.37 V @ 30 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
50 µA @ 600 V
-
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263AA
-55°C ~ 150°C
DSS6-0045AS-TRL
IXYS

DIODE SCHOTTKY 45V 6A TO252AA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45 V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 630 mV @ 6 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 300 µA @ 45 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252AA
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: -
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45 V
6A
630 mV @ 6 A
Fast Recovery =< 500ns, > 200mA (Io)
-
300 µA @ 45 V
-
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252AA
-55°C ~ 175°C
DSS6-0045AS-TUB
IXYS

DIODE SCHOTTKY 45V 6A TO252AA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45 V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 630 mV @ 6 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 250 µA @ 45 V
  • Capacitance @ Vr, F: 497pF @ 5V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252AA
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: -
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45 V
6A
630 mV @ 6 A
Fast Recovery =< 500ns, > 200mA (Io)
-
250 µA @ 45 V
497pF @ 5V, 1MHz
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252AA
-55°C ~ 175°C
DPG30P400PJ
IXYS

DIODE GP 400V 30A ISOPLUS220

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 30 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 45 ns
  • Current - Reverse Leakage @ Vr: 1 µA @ 400 V
  • Capacitance @ Vr, F: 46pF @ 200V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: ISOPLUS220™
  • Supplier Device Package: ISOPLUS220™
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: -
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400 V
30A
1.35 V @ 30 A
Fast Recovery =< 500ns, > 200mA (Io)
45 ns
1 µA @ 400 V
46pF @ 200V, 1MHz
Through Hole
ISOPLUS220™
ISOPLUS220™
-55°C ~ 175°C