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Prodotti Toshiba Semiconductor and Storage - Transistor - FET, MOSFET - Singoli

Record 1.075
Pagina  3/36
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TK170V65Z-LQ
Toshiba Semiconductor and Storage

MOSFET N-CH 650V 18A 5DFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 730µA
  • Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1635 pF @ 300 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 170mOhm @ 9A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 4-DFN-EP (8x8)
  • Package / Case: 4-VSFN Exposed Pad
pacchetto: -
Azione14.850
MOSFET (Metal Oxide)
650 V
18A (Ta)
10V
4V @ 730µA
29 nC @ 10 V
1635 pF @ 300 V
±30V
-
150W (Tc)
170mOhm @ 9A, 10V
150°C
Surface Mount
4-DFN-EP (8x8)
4-VSFN Exposed Pad
SSM3H137TU-LF
Toshiba Semiconductor and Storage

MOSFET N-CH 34V 2A UFM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 34 V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 1.7V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 119 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 800mW (Ta)
  • Rds On (Max) @ Id, Vgs: 240mOhm @ 1A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: UFM
  • Package / Case: 3-SMD, Flat Leads
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
34 V
2A (Ta)
4V, 10V
1.7V @ 1mA
3 nC @ 10 V
119 pF @ 10 V
±20V
-
800mW (Ta)
240mOhm @ 1A, 10V
150°C
Surface Mount
UFM
3-SMD, Flat Leads
TPCC8093-L1Q
Toshiba Semiconductor and Storage

MOSFET N-CH 20V 21A 8TSON

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1860 pF @ 10 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 1.9W (Ta), 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.8mOhm @ 10.5A, 4.5V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-TSON Advance (3.1x3.1)
  • Package / Case: 8-PowerVDFN
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
20 V
21A (Ta)
2.5V, 4.5V
1.2V @ 500µA
16 nC @ 5 V
1860 pF @ 10 V
±12V
-
1.9W (Ta), 30W (Tc)
5.8mOhm @ 10.5A, 4.5V
150°C
Surface Mount
8-TSON Advance (3.1x3.1)
8-PowerVDFN
TPCA8052-H-T2L1-VM
Toshiba Semiconductor and Storage

MOSFET N-CH 40V 20A 8SOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 200µA
  • Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2110 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.6W (Ta), 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 11.3mOhm @ 10A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP Advance (5x5)
  • Package / Case: 8-PowerVDFN
pacchetto: -
Azione42.255
MOSFET (Metal Oxide)
40 V
20A (Ta)
4.5V, 10V
2.3V @ 200µA
25 nC @ 10 V
2110 pF @ 10 V
±20V
-
1.6W (Ta), 30W (Tc)
11.3mOhm @ 10A, 10V
150°C
Surface Mount
8-SOP Advance (5x5)
8-PowerVDFN
TPCC8136-LQ
Toshiba Semiconductor and Storage

MOSFET P-CH 20V 9.4A 8TSON

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 10 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 700mW (Ta), 18W (Tc)
  • Rds On (Max) @ Id, Vgs: 16mOhm @ 9.4A, 4.5V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-TSON Advance (3.1x3.1)
  • Package / Case: 8-PowerVDFN
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
20 V
9.4A (Ta)
1.8V, 4.5V
1.2V @ 1mA
36 nC @ 5 V
2350 pF @ 10 V
±12V
-
700mW (Ta), 18W (Tc)
16mOhm @ 9.4A, 4.5V
150°C
Surface Mount
8-TSON Advance (3.1x3.1)
8-PowerVDFN
XPH4R10ANB-L1XHQ
Toshiba Semiconductor and Storage

MOSFET N-CH 100V 70A 8SOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 70A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4970 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 960mW (Ta), 170W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.1mOhm @ 35A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP Advance (5x5)
  • Package / Case: 8-PowerVDFN
pacchetto: -
Azione102.927
MOSFET (Metal Oxide)
100 V
70A (Ta)
6V, 10V
3.5V @ 1mA
75 nC @ 10 V
4970 pF @ 10 V
±20V
-
960mW (Ta), 170W (Tc)
4.1mOhm @ 35A, 10V
175°C
Surface Mount
8-SOP Advance (5x5)
8-PowerVDFN
TKR74F04PB-LXGQ
Toshiba Semiconductor and Storage

MOSFET N-CH 40V 250A TO220SM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 250A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 227 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 14200 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 375W (Tc)
  • Rds On (Max) @ Id, Vgs: 0.74mOhm @ 125A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-220SM(W)
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
pacchetto: -
Azione6.852
MOSFET (Metal Oxide)
40 V
250A (Ta)
6V, 10V
3V @ 1mA
227 nC @ 10 V
14200 pF @ 10 V
±20V
-
375W (Tc)
0.74mOhm @ 125A, 10V
175°C
Surface Mount
TO-220SM(W)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TPCC8104-L1Q-CM
Toshiba Semiconductor and Storage

MOSFET P-CH 30V 20A 8TSON

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2260 pF @ 10 V
  • Vgs (Max): +20V, -25V
  • FET Feature: -
  • Power Dissipation (Max): 700mW (Ta), 27W (Tc)
  • Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-TSON Advance (3.1x3.1)
  • Package / Case: 8-PowerVDFN
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
30 V
20A (Ta)
4.5V, 10V
2V @ 500µA
58 nC @ 10 V
2260 pF @ 10 V
+20V, -25V
-
700mW (Ta), 27W (Tc)
8.8mOhm @ 10A, 10V
150°C
Surface Mount
8-TSON Advance (3.1x3.1)
8-PowerVDFN
TW060N120C-S1F
Toshiba Semiconductor and Storage

G3 1200V SIC-MOSFET TO-247 60MO

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Vgs(th) (Max) @ Id: 5V @ 4.2mA
  • Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1530 pF @ 800 V
  • Vgs (Max): +25V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 170W (Tc)
  • Rds On (Max) @ Id, Vgs: 78mOhm @ 18A, 18V
  • Operating Temperature: 175°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
pacchetto: -
Azione150
SiCFET (Silicon Carbide)
1200 V
36A (Tc)
18V
5V @ 4.2mA
46 nC @ 18 V
1530 pF @ 800 V
+25V, -10V
-
170W (Tc)
78mOhm @ 18A, 18V
175°C
Through Hole
TO-247
TO-247-3
TK200F04N1L-LXGQ
Toshiba Semiconductor and Storage

MOSFET N-CH 40V 200A TO220SM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 214 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 14920 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 375W (Tc)
  • Rds On (Max) @ Id, Vgs: 0.9mOhm @ 100A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-220SM(W)
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
pacchetto: -
Azione3.000
MOSFET (Metal Oxide)
40 V
200A (Ta)
6V, 10V
3V @ 1mA
214 nC @ 10 V
14920 pF @ 10 V
±20V
-
375W (Tc)
0.9mOhm @ 100A, 10V
175°C
Surface Mount
TO-220SM(W)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TPHR6503PL1-LQ
Toshiba Semiconductor and Storage

UMOS9 SOP-ADV(N) PD=210W F=1MHZ

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 960mW (Ta), 210W (Tc)
  • Rds On (Max) @ Id, Vgs: 0.65mOhm @ 50A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP Advance (5x5.75)
  • Package / Case: 8-PowerTDFN
pacchetto: -
Azione7.107
MOSFET (Metal Oxide)
30 V
150A (Tc)
4.5V, 10V
2.1V @ 1mA
110 nC @ 10 V
10000 pF @ 15 V
±20V
-
960mW (Ta), 210W (Tc)
0.65mOhm @ 50A, 10V
175°C
Surface Mount
8-SOP Advance (5x5.75)
8-PowerTDFN
SSM3K15CT-L3F
Toshiba Semiconductor and Storage

MOSFET N-CH 30V 100MA CST3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
  • Vgs(th) (Max) @ Id: 1.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 7.8 pF @ 3 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 100mW (Ta)
  • Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: CST3
  • Package / Case: SC-101, SOT-883
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
30 V
100mA (Ta)
2.5V, 4V
1.5V @ 100µA
-
7.8 pF @ 3 V
±20V
-
100mW (Ta)
4Ohm @ 10mA, 4V
150°C
Surface Mount
CST3
SC-101, SOT-883
TPCA8109-TE12L1-V
Toshiba Semiconductor and Storage

MOSFET P-CH 30V 24A 8SOP

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 10 V
  • Vgs (Max): +20V, -25V
  • FET Feature: -
  • Power Dissipation (Max): 1.6W (Ta), 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 9mOhm @ 12A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP Advance (5x5)
  • Package / Case: 8-PowerVDFN
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
30 V
24A (Ta)
4.5V, 10V
2V @ 500µA
56 nC @ 10 V
2400 pF @ 10 V
+20V, -25V
-
1.6W (Ta), 30W (Tc)
9mOhm @ 12A, 10V
150°C
Surface Mount
8-SOP Advance (5x5)
8-PowerVDFN
TK110N65Z-S1F
Toshiba Semiconductor and Storage

POWER MOSFET TRANSISTOR TO-247(O

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1.02mA
  • Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 300 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 190W (Tc)
  • Rds On (Max) @ Id, Vgs: 110mOhm @ 12A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
pacchetto: -
Azione75
MOSFET (Metal Oxide)
650 V
24A (Ta)
10V
4V @ 1.02mA
40 nC @ 10 V
2250 pF @ 300 V
±30V
-
190W (Tc)
110mOhm @ 12A, 10V
150°C
Through Hole
TO-247
TO-247-3
SSM3K62TU-LF
Toshiba Semiconductor and Storage

MOSFET N-CH 20V 800MA UFM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 177 pF @ 10 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 57mOhm @ 800mA, 4.5V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: UFM
  • Package / Case: 3-SMD, Flat Lead
pacchetto: -
Azione19.170
MOSFET (Metal Oxide)
20 V
800mA (Ta)
1.2V, 4.5V
1V @ 1mA
2 nC @ 4.5 V
177 pF @ 10 V
±8V
-
1W (Ta)
57mOhm @ 800mA, 4.5V
150°C
Surface Mount
UFM
3-SMD, Flat Lead
SSM3J35AFS-LF
Toshiba Semiconductor and Storage

MOSFET P-CH 20V 250MA SSM

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 42 pF @ 10 V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 150mW (Ta)
  • Rds On (Max) @ Id, Vgs: 1.4Ohm @ 150mA, 4.5V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: SSM
  • Package / Case: SC-75, SOT-416
pacchetto: -
Azione51.531
MOSFET (Metal Oxide)
20 V
250mA (Ta)
1.2V, 4.5V
1V @ 100µA
-
42 pF @ 10 V
±10V
-
150mW (Ta)
1.4Ohm @ 150mA, 4.5V
150°C
Surface Mount
SSM
SC-75, SOT-416
TK17V65W-LQ
Toshiba Semiconductor and Storage

X35 PB-F POWER MOSFET TRANSISTOR

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 17.3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 900µA
  • Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 300 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 156W (Tc)
  • Rds On (Max) @ Id, Vgs: 210mOhm @ 8.7A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 4-DFN-EP (8x8)
  • Package / Case: 4-VSFN Exposed Pad
pacchetto: -
Azione42
MOSFET (Metal Oxide)
650 V
17.3A (Ta)
10V
3.5V @ 900µA
45 nC @ 10 V
1800 pF @ 300 V
±30V
-
156W (Tc)
210mOhm @ 8.7A, 10V
150°C
Surface Mount
4-DFN-EP (8x8)
4-VSFN Exposed Pad
2SK3798-STA4-Q-M
Toshiba Semiconductor and Storage

POWER MOSFET TRANSISTOR TO-220(S

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 900 V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.5Ohm @ 2A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220SIS
  • Package / Case: TO-220-3 Full Pack
pacchetto: -
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MOSFET (Metal Oxide)
900 V
4A (Ta)
10V
4V @ 1mA
26 nC @ 10 V
800 pF @ 25 V
±30V
-
40W (Tc)
3.5Ohm @ 2A, 10V
150°C
Through Hole
TO-220SIS
TO-220-3 Full Pack
SSM3J36TU-LF
Toshiba Semiconductor and Storage

MOSFET P-CH 20V 330MA UFM

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 330mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 4 V
  • Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 10 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 800mW (Ta)
  • Rds On (Max) @ Id, Vgs: 1.31Ohm @ 100mA, 4.5V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: UFM
  • Package / Case: 3-SMD, Flat Leads
pacchetto: -
Azione33.828
MOSFET (Metal Oxide)
20 V
330mA (Ta)
1.5V, 4.5V
1V @ 1mA
1.2 nC @ 4 V
43 pF @ 10 V
±8V
-
800mW (Ta)
1.31Ohm @ 100mA, 4.5V
150°C
Surface Mount
UFM
3-SMD, Flat Leads
SSM3J378R-LXHF
Toshiba Semiconductor and Storage

AECQ MOSFET PCH -20V -6A SOT23F

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
  • Vgs (Max): +6V, -8V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 29.8mOhm @ 3A, 4.5V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23F
  • Package / Case: SOT-23-3 Flat Leads
pacchetto: -
Azione66.507
MOSFET (Metal Oxide)
20 V
6A (Ta)
1.5V, 4.5V
1V @ 1mA
12.8 nC @ 4.5 V
840 pF @ 10 V
+6V, -8V
-
1W (Ta)
29.8mOhm @ 3A, 4.5V
150°C
Surface Mount
SOT-23F
SOT-23-3 Flat Leads
SSM6K518NU-LF
Toshiba Semiconductor and Storage

MOSFET N-CH 20V 6A 6UDFNB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 10 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 1.25W (Ta)
  • Rds On (Max) @ Id, Vgs: 33mOhm @ 4A, 4.5V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-UDFNB (2x2)
  • Package / Case: 6-WDFN Exposed Pad
pacchetto: -
Azione18.414
MOSFET (Metal Oxide)
20 V
6A (Ta)
1.5V, 4.5V
1V @ 1mA
3.6 nC @ 4.5 V
410 pF @ 10 V
±8V
-
1.25W (Ta)
33mOhm @ 4A, 4.5V
150°C
Surface Mount
6-UDFNB (2x2)
6-WDFN Exposed Pad
SSM3K16FV-L3F
Toshiba Semiconductor and Storage

PB-F VESM S-MOS (LF) TRANSISTOR

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
  • Vgs(th) (Max) @ Id: 1.1V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 9.3 pF @ 3 V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 150mW (Ta)
  • Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: VESM
  • Package / Case: SOT-723
pacchetto: -
Azione26.736
MOSFET (Metal Oxide)
20 V
100mA (Ta)
1.5V, 4V
1.1V @ 100µA
-
9.3 pF @ 3 V
±10V
-
150mW (Ta)
3Ohm @ 10mA, 4V
150°C
Surface Mount
VESM
SOT-723
TK2R4E08QM-S1X
Toshiba Semiconductor and Storage

UMOS10 TO-220AB 80V 2.4MOHM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 2.2mA
  • Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 40 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.44mOhm @ 50A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
pacchetto: -
Azione528
MOSFET (Metal Oxide)
80 V
120A (Tc)
6V, 10V
3.5V @ 2.2mA
178 nC @ 10 V
13000 pF @ 40 V
±20V
-
300W (Tc)
2.44mOhm @ 50A, 10V
175°C
Through Hole
TO-220
TO-220-3
TK190E65Z-S1X
Toshiba Semiconductor and Storage

650V DTMOS VI TO-220 190MOHM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 610µA
  • Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 300 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 130W (Tc)
  • Rds On (Max) @ Id, Vgs: 190mOhm @ 7.5A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
pacchetto: -
Azione363
MOSFET (Metal Oxide)
650 V
15A (Ta)
10V
4V @ 610µA
25 nC @ 10 V
1370 pF @ 300 V
±30V
-
130W (Tc)
190mOhm @ 7.5A, 10V
150°C
Through Hole
TO-220
TO-220-3
TK6R7P06PL-RQ
Toshiba Semiconductor and Storage

MOSFET N-CHANNEL 60V 46A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 300µA
  • Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 66W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.7mOhm @ 23A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
pacchetto: -
Azione3
MOSFET (Metal Oxide)
60 V
46A (Tc)
4.5V, 10V
2.5V @ 300µA
26 nC @ 10 V
1990 pF @ 30 V
±20V
-
66W (Tc)
6.7mOhm @ 23A, 10V
175°C
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
TPH2R903PL-L1Q
Toshiba Semiconductor and Storage

PB-FPOWERMOSFETTRANSISTORSOP8-AD

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 200µA
  • Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 960mW (Ta), 81W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.9mOhm @ 35A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP Advance (5x5)
  • Package / Case: 8-PowerVDFN
pacchetto: -
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MOSFET (Metal Oxide)
30 V
70A (Tc)
4.5V, 10V
2.1V @ 200µA
26 nC @ 10 V
2300 pF @ 15 V
±20V
-
960mW (Ta), 81W (Tc)
2.9mOhm @ 35A, 10V
175°C
Surface Mount
8-SOP Advance (5x5)
8-PowerVDFN
SSM3K36TU-LF
Toshiba Semiconductor and Storage

MOSFET N-CH 20V 500MA UFM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 1.23 nC @ 4 V
  • Input Capacitance (Ciss) (Max) @ Vds: 46 pF @ 10 V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 800mW (Ta)
  • Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: UFM
  • Package / Case: 3-SMD, Flat Leads
pacchetto: -
Azione15.840
MOSFET (Metal Oxide)
20 V
500mA (Ta)
1.5V, 5V
1V @ 1mA
1.23 nC @ 4 V
46 pF @ 10 V
±10V
-
800mW (Ta)
630mOhm @ 200mA, 5V
150°C
Surface Mount
UFM
3-SMD, Flat Leads
TPH3R506PL-LQ
Toshiba Semiconductor and Storage

MOSFET N-CH 60V 94A 8SOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 94A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4420 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 830mW (Ta), 116W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.5mOhm @ 47A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP Advance (5x5)
  • Package / Case: 8-PowerVDFN
pacchetto: -
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MOSFET (Metal Oxide)
60 V
94A (Tc)
4.5V, 10V
2.5V @ 500µA
55 nC @ 10 V
4420 pF @ 30 V
±20V
-
830mW (Ta), 116W (Tc)
3.5mOhm @ 47A, 10V
175°C
Surface Mount
8-SOP Advance (5x5)
8-PowerVDFN
TK190U65Z-RQ
Toshiba Semiconductor and Storage

DTMOS VI TOLL PD=130W F=1MHZ

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 610µA
  • Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 300 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 130W (Tc)
  • Rds On (Max) @ Id, Vgs: 190mOhm @ 7.5A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: TOLL
  • Package / Case: 8-PowerSFN
pacchetto: -
Azione6.456
MOSFET (Metal Oxide)
650 V
15A (Ta)
10V
4V @ 610µA
25 nC @ 10 V
1370 pF @ 300 V
±30V
-
130W (Tc)
190mOhm @ 7.5A, 10V
150°C
Surface Mount
TOLL
8-PowerSFN
TW015N65C-S1F
Toshiba Semiconductor and Storage

G3 650V SIC-MOSFET TO-247 15MOH

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Vgs(th) (Max) @ Id: 5V @ 11.7mA
  • Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4850 pF @ 400 V
  • Vgs (Max): +25V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 342W (Tc)
  • Rds On (Max) @ Id, Vgs: 21mOhm @ 50A, 18V
  • Operating Temperature: 175°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
pacchetto: -
Azione192
SiCFET (Silicon Carbide)
650 V
100A (Tc)
18V
5V @ 11.7mA
128 nC @ 18 V
4850 pF @ 400 V
+25V, -10V
-
342W (Tc)
21mOhm @ 50A, 18V
175°C
Through Hole
TO-247
TO-247-3