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Prodotti Transphorm

Record 22
Pagina  1/1
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
TPH3206LXB
Transphorm

650V, 150M

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
pacchetto: -
Azione3.024
TPH3202LD
Transphorm

GAN FET 600V 9A PQFN88

  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 8V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 480V
  • Vgs (Max): ±18V
  • FET Feature: -
  • Power Dissipation (Max): 65W (Tc)
  • Rds On (Max) @ Id, Vgs: 350 mOhm @ 5.5A, 8V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PQFN (8x8)
  • Package / Case: 4-PowerDFN
pacchetto: 4-PowerDFN
Azione6.756
TPH3205WSBQA
Transphorm

GAN FET 650V 35A TO247

  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 2.6V @ 700µA
  • Gate Charge (Qg) (Max) @ Vgs: 42nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 400V
  • Vgs (Max): ±18V
  • FET Feature: -
  • Power Dissipation (Max): 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 62 mOhm @ 22A, 8V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
pacchetto: TO-247-3
Azione22.224
TPH3208LDG
Transphorm

GAN FET 650V 20A PQFN88

  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 8V
  • Vgs(th) (Max) @ Id: 2.6V @ 300µA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 400V
  • Vgs (Max): ±18V
  • FET Feature: -
  • Power Dissipation (Max): 96W (Tc)
  • Rds On (Max) @ Id, Vgs: 130 mOhm @ 13A, 8V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PQFN (8x8)
  • Package / Case: 3-PowerDFN
pacchetto: 3-PowerDFN
Azione10.308
TPH3206LDGB
Transphorm

GAN FET 650V 16A PQFN88

  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 8V
  • Vgs(th) (Max) @ Id: 2.6V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 480V
  • Vgs (Max): ±18V
  • FET Feature: -
  • Power Dissipation (Max): 81W (Tc)
  • Rds On (Max) @ Id, Vgs: 180 mOhm @ 11A, 8V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PQFN (8x8)
  • Package / Case: 3-PowerDFN
pacchetto: 3-PowerDFN
Azione7.980
TPH3206LDB
Transphorm

MOSFET N-CH GANFET 650V 16A PQFN

  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 8V
  • Vgs(th) (Max) @ Id: 2.6V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 480V
  • Vgs (Max): ±18V
  • FET Feature: -
  • Power Dissipation (Max): 81W (Tc)
  • Rds On (Max) @ Id, Vgs: 180 mOhm @ 10A, 8V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PQFN (8x8)
  • Package / Case: 4-PowerDFN
pacchetto: 4-PowerDFN
Azione7.520
TPH3206LSB
Transphorm

MOSFET N-CH GANFET 650V 16A PQFN

  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 8V
  • Vgs(th) (Max) @ Id: 2.6V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 480V
  • Vgs (Max): ±18V
  • FET Feature: -
  • Power Dissipation (Max): 81W (Tc)
  • Rds On (Max) @ Id, Vgs: 180 mOhm @ 10A, 8V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PQFN (8x8)
  • Package / Case: 3-PowerDFN
pacchetto: 3-PowerDFN
Azione8.580
TPH3202LS
Transphorm

GAN FET 600V 9A PQFN88

  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 8V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 480V
  • Vgs (Max): ±18V
  • FET Feature: -
  • Power Dissipation (Max): 65W (Tc)
  • Rds On (Max) @ Id, Vgs: 350 mOhm @ 5.5A, 8V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PQFN (8x8)
  • Package / Case: 3-PowerDFN
pacchetto: 3-PowerDFN
Azione6.684
TPH3206PSB
Transphorm

MOSFET N-CH GANFET 650V TO220AB

  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 8V
  • Vgs(th) (Max) @ Id: 2.6V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 480V
  • Vgs (Max): ±18V
  • FET Feature: -
  • Power Dissipation (Max): 81W (Tc)
  • Rds On (Max) @ Id, Vgs: 180 mOhm @ 10A, 8V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
pacchetto: TO-220-3
Azione7.152
TPH3212PS
Transphorm

GAN FET 650V 27A TO220

  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 8V
  • Vgs(th) (Max) @ Id: 2.6V @ 400uA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 1130pF @ 400V
  • Vgs (Max): ±18V
  • FET Feature: -
  • Power Dissipation (Max): 104W (Tc)
  • Rds On (Max) @ Id, Vgs: 72 mOhm @ 17A, 8V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
pacchetto: TO-220-3
Azione9.528
TPH3208LS
Transphorm

GAN FET 650V 20A PQFN88

  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 8V
  • Vgs(th) (Max) @ Id: 2.6V @ 300µA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 400V
  • Vgs (Max): ±18V
  • FET Feature: -
  • Power Dissipation (Max): 96W (Tc)
  • Rds On (Max) @ Id, Vgs: 130 mOhm @ 13A, 8V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PQFN (8x8)
  • Package / Case: 3-PowerDFN
pacchetto: 3-PowerDFN
Azione7.536
TPH3206PD
Transphorm

GAN FET 600V 17A TO220

  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 8V
  • Vgs(th) (Max) @ Id: 2.6V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 480V
  • Vgs (Max): ±18V
  • FET Feature: -
  • Power Dissipation (Max): 96W (Tc)
  • Rds On (Max) @ Id, Vgs: 180 mOhm @ 11A, 8V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
pacchetto: TO-220-3
Azione6.912
TPH3206LS
Transphorm

GAN FET 600V 17A PQFN88

  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 8V
  • Vgs(th) (Max) @ Id: 2.6V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 480V
  • Vgs (Max): ±18V
  • FET Feature: -
  • Power Dissipation (Max): 96W (Tc)
  • Rds On (Max) @ Id, Vgs: 180 mOhm @ 11A, 8V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PQFN (8x8)
  • Package / Case: 3-PowerDFN
pacchetto: 3-PowerDFN
Azione8.376
TPH3206LD
Transphorm

GAN FET 600V 17A PQFN88

  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 8V
  • Vgs(th) (Max) @ Id: 2.6V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 480V
  • Vgs (Max): ±18V
  • FET Feature: -
  • Power Dissipation (Max): 96W (Tc)
  • Rds On (Max) @ Id, Vgs: 180 mOhm @ 11A, 8V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PQFN (8x8)
  • Package / Case: 4-PowerDFN
pacchetto: 4-PowerDFN
Azione12.732
TPH3208PS
Transphorm

GAN FET 650V 20A TO220

  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 8V
  • Vgs(th) (Max) @ Id: 2.6V @ 300µA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 400V
  • Vgs (Max): ±18V
  • FET Feature: -
  • Power Dissipation (Max): 96W (Tc)
  • Rds On (Max) @ Id, Vgs: 130 mOhm @ 13A, 8V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
pacchetto: TO-220-3
Azione17.796
TPH3206PS
Transphorm

GAN FET 600V 17A TO220

  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 8V
  • Vgs(th) (Max) @ Id: 2.6V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 480V
  • Vgs (Max): ±18V
  • FET Feature: -
  • Power Dissipation (Max): 96W (Tc)
  • Rds On (Max) @ Id, Vgs: 180 mOhm @ 11A, 8V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
pacchetto: TO-220-3
Azione8.664
TPH3202PD
Transphorm

GAN FET 600V 9A TO220

  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 8V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 480V
  • Vgs (Max): ±18V
  • FET Feature: -
  • Power Dissipation (Max): 65W (Tc)
  • Rds On (Max) @ Id, Vgs: 350 mOhm @ 5.5A, 8V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
pacchetto: TO-220-3
Azione6.060
TPH3202PS
Transphorm

GAN FET 600V 9A TO220

  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 8V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 480V
  • Vgs (Max): ±18V
  • FET Feature: -
  • Power Dissipation (Max): 65W (Tc)
  • Rds On (Max) @ Id, Vgs: 350 mOhm @ 5.5A, 8V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
pacchetto: TO-220-3
Azione7.176
TPH3207WS
Transphorm

GAN FET 650V 50A TO247

  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 8V
  • Vgs(th) (Max) @ Id: 2.65V @ 700µA
  • Gate Charge (Qg) (Max) @ Vgs: 42nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 2197pF @ 400V
  • Vgs (Max): ±18V
  • FET Feature: -
  • Power Dissipation (Max): 178W (Tc)
  • Rds On (Max) @ Id, Vgs: 41 mOhm @ 32A, 8V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
pacchetto: TO-247-3
Azione20.076
TPH3205WSB
Transphorm

GAN FET 650V 36A TO247

  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 8V
  • Vgs(th) (Max) @ Id: 2.6V @ 700µA
  • Gate Charge (Qg) (Max) @ Vgs: 42nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 400V
  • Vgs (Max): ±18V
  • FET Feature: -
  • Power Dissipation (Max): 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 60 mOhm @ 22A, 8V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
pacchetto: TO-247-3
Azione12.948
TPH3208LD
Transphorm

GAN FET 650V 20A PQFN88

  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 8V
  • Vgs(th) (Max) @ Id: 2.6V @ 300µA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 400V
  • Vgs (Max): ±18V
  • FET Feature: -
  • Power Dissipation (Max): 96W (Tc)
  • Rds On (Max) @ Id, Vgs: 130 mOhm @ 13A, 8V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PQFN (8x8)
  • Package / Case: 4-PowerDFN
pacchetto: 4-PowerDFN
Azione19.224
TPD3215M
Transphorm

CASCODE GAN HB 600V 70A MODULE

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
  • Rds On (Max) @ Id, Vgs: 34 mOhm @ 30A, 8V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 28nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 2260pF @ 100V
  • Power - Max: 470W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: Module
  • Supplier Device Package: Module
pacchetto: Module
Azione5.616