A team from the Massachusetts Institute of Technology (MIT) has successfully developed a novel nanometer-scale 3D transistor using ultra-thin semiconductor materials. This transistor is the smallest 3D transistor known to date, with performance and functionality that can match or even exceed current silicon-based transistors. It is expected to open new pathways for the development of high-performance, energy-efficient electronic products. The related paper was published in the Nature Electronics journal on the 5th.
Transistors are fundamental components in modern electronic devices and integrated circuits, with key functions such as amplifying and switching electronic signals. However, due to the "Boltzmann tyranny," a fundamental physical limitation, silicon-based transistors cannot operate below a certain voltage, which restricts their ability to further enhance performance and extend their range of applications.
To overcome this limitation, the team utilized ultra-thin semiconductor materials made of gallium antimonide (GaSb) and indium arsenide (InAs) to develop this new 3D transistor. The performance of this transistor is comparable to that of the most advanced silicon transistors, capable of operating efficiently at voltages much lower than traditional transistors.
The team also incorporated the principle of quantum tunneling into the design of the new transistor. In quantum tunneling, electrons can pass through, rather than climb over, energy barriers, making it easier to turn the transistor on or off. To further minimize the size of the transistor, they created a vertical nanowire heterostructure with a diameter of just 6 nanometers.
Testing results show that the new transistor can switch states more quickly and efficiently. Compared to similar tunneling transistors, its performance is improved by a factor of 20.
This new transistor leverages quantum mechanical properties, achieving low-voltage operation and high performance in just a few square nanometers. Due to its extremely small size, more of these transistors can be packed onto computer chips, laying a solid foundation for the development of more efficient, energy-saving, and powerful electronic products.
Currently, the team is working on improving manufacturing processes to ensure consistent transistor performance across the entire chip. They are also actively exploring other 3D transistor designs, such as vertical fin structures.
