According to a report by Taiwanese media outlet DIGITIMES, TSMC is set to introduce High NA EUV lithography technology in its A14P process, with a potential launch as early as 2028. Currently, TSMC's most advanced process is the A16, which supports backside power delivery network (BSPDN) and is scheduled for mass production in the second half of 2026. The A16 will still use the traditional Low NA (0.33NA) EUV lithography machines.
The report indicates that the A14 process, the successor to A16, is expected to enter risk production in early 2026, with mass production possibly starting in Q3 2027. The primary lithography equipment for this node will continue to be ASML’s NXE:3800E Low NA EUV machines. However, the A14P, an improved version of A14, is anticipated to officially adopt High NA EUV lithography technology around 2028.
Looking ahead, TSMC plans to advance to even more sophisticated nodes, such as A10, after 2030, fully integrating High NA EUV technology to enhance process technology cost and performance. The report also mentions that TSMC has completed the initial phase of procurement for ASML’s High NA EUV lithography machines intended for mass production. Additionally, ASML has disclosed plans to deliver TSMC's first High NA EUV lithography machine, valued at $380 million, by the end of 2024.
Among TSMC's advanced foundry competitors, Intel has confirmed it will use High NA lithography for its Intel A14 node. Samsung Electronics has placed orders for High NA EUV machines from ASML but has not yet specified their deployment timeline. Rapidus is expected to adopt High NA technology only after reaching the 2nm node.
