Name: IPB041N04NGATMA1
Brand: Infineon Technologies
SKU: IPB041N04NGATMA1
Availability: InStock
Rating: 5 (95 reviews)

IPB041N04NGATMA1

Per Riferimento Soltanto

Numero di parte	IPB041N04NGATMA1
Produttore	Infineon Technologies
Descrizione	MOSFET N-CH 40V 80A TO263-3
Scheda dati	IPB041N04NGATMA1 Scheda dati
pacchetto	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
ECAD
A magazzino	2.544 piece(s)
Prezzo unitario	Request a Quote
Tempi di Consegna	Essere confermato
Tempo di consegna stimato	nov 24 - nov 29 (Scegli una spedizione rapida)
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Stiamo offrendo IPB041N04NGATMA1 per il prezzo competitivo sul mercato globale, vi preghiamo di inviarci una richiesta di quote per i prezzi. Grazie!
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Specifiche IPB041N04NGATMA1

Produttore	Infineon Technologies
Categoria	Dispositivi a semiconduttore discreti - Transistor - FET, MOSFET - Singoli
pacchetto	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
ECAD
Serie	OptiMOS?
Tipo FET	N-Channel
Tecnologia	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40V
Corrente - Scarico continuo (Id) @ 25 ° C	80A (Tc)
Tensione dell'unità (Rds massimo attivato, Rds minimo attivo)	10V
Vgs (th) (Max) @ Id	4V @ 45µA
Gate Charge (Qg) (Max) @ Vgs	56nC @ 10V
Capacità di ingresso (Ciss) (Max) @ Vds	4500pF @ 20V
Vgs (massimo)	±20V
Caratteristica FET	-
Dissipazione di potenza (max)	94W (Tc)
Rds On (Max) @ Id, Vgs	4.1 mOhm @ 80A, 10V
temperatura di esercizio	-55°C ~ 175°C (TJ)
Tipo di montaggio	Surface Mount
Pacchetto dispositivo fornitore	PG-TO263-2
Pacchetto / caso	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Scheda tecnica IPB041N04NGATMA1

IPB041N04NGATMA1 Packaging

IPB041N04NGATMA1 FAQ

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6. What is the process for return or replacement of IPB041N04NGATMA1?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the IPB041N04NGATMA1 we delivered, we will accept the replacement or return of the IPB041N04NGATMA1 only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of IPB041N04NGATMA1.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations
7.How to contact us to get technical supports, such as IPB041N04NGATMA1 pin diagram, IPB041N04NGATMA1 datasheet?

If you need any after-sales service, please do not hesitate to contact us.

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IPB041N04NGATMA1

D# IPB041N04NGATMA1TR-ND

Infineon Technologies AG

MOSFET N-CH 40V 80A D2PAK

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IPB041N04NGATMA1

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