Name: NDT02N60ZT3G
Brand: ON Semiconductor
SKU: NDT02N60ZT3G
Availability: InStock
Rating: 5 (68 reviews)

NDT02N60ZT3G

Per Riferimento Soltanto

Numero di parte	NDT02N60ZT3G
Produttore	ON Semiconductor
Descrizione	MOSFET N-CH 600V 300MA SOT223-4
Scheda dati
pacchetto	TO-261-4, TO-261AA
ECAD
A magazzino	3.504 piece(s)
Prezzo unitario	Request a Quote
Tempi di Consegna	Essere confermato
Tempo di consegna stimato	nov 19 - nov 24 (Scegli una spedizione rapida)
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Stiamo offrendo NDT02N60ZT3G per il prezzo competitivo sul mercato globale, vi preghiamo di inviarci una richiesta di quote per i prezzi. Grazie!
Per elaborare il tuo RFQ, si prega di aggiungere NDT02N60ZT3G con quantità in distinta. Heisener.com non richiede alcuna registrazione, richiedere un preventivo di NDT02N60ZT3G.

Specifiche NDT02N60ZT3G

Produttore	ON Semiconductor
Categoria	Dispositivi a semiconduttore discreti - Transistor - FET, MOSFET - Singoli
pacchetto	TO-261-4, TO-261AA
ECAD
Serie	-
Tipo FET	N-Channel
Tecnologia	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Corrente - Scarico continuo (Id) @ 25 ° C	300mA (Tc)
Tensione dell'unità (Rds massimo attivato, Rds minimo attivo)	10V
Vgs (th) (Max) @ Id	4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs	7.4nC @ 10V
Capacità di ingresso (Ciss) (Max) @ Vds	170pF @ 25V
Vgs (massimo)	±30V
Caratteristica FET	-
Dissipazione di potenza (max)	2W (Tc)
Rds On (Max) @ Id, Vgs	8 Ohm @ 700mA, 10V
temperatura di esercizio	-55°C ~ 150°C (TJ)
Tipo di montaggio	Surface Mount
Pacchetto dispositivo fornitore	SOT-223 (TO-261)
Pacchetto / caso	TO-261-4, TO-261AA

NDT02N60ZT3G Packaging

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

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Numero di parte

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Descrizione

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NDT02N60ZT3G

D# NDT02N60ZT3G-ND

ON Semiconductor

MOSFET N-CH 600V 300MA SOT223

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NDT02N60ZT3G

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