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NVMFS5830NLWFT3G

NVMFS5830NLWFT3G

NVMFS5830NLWFT3G

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Numero di parte NVMFS5830NLWFT3G
Produttore ON Semiconductor
Descrizione MOSFET N-CH 40V 172A SO8FL
Scheda dati
pacchetto 8-PowerTDFN
ECAD
A magazzino 3.824 piece(s)
Prezzo unitario Request a Quote
Tempi di Consegna Essere confermato
Tempo di consegna stimato dic 3 - dic 8 (Scegli una spedizione rapida)
Richiedi Preventivo
Modalità di pagamento
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Specifiche NVMFS5830NLWFT3G

ProduttoreON Semiconductor
CategoriaDispositivi a semiconduttore discreti - Transistor - FET, MOSFET - Singoli
pacchetto8-PowerTDFN
ECAD
Serie-
Tipo FETN-Channel
TecnologiaMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Corrente - Scarico continuo (Id) @ 25 ° C29A (Ta)
Tensione dell'unità (Rds massimo attivato, Rds minimo attivo)4.5V, 10V
Vgs (th) (Max) @ Id2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs113nC @ 10V
Capacità di ingresso (Ciss) (Max) @ Vds5880pF @ 25V
Vgs (massimo)±20V
Caratteristica FET-
Dissipazione di potenza (max)3.8W (Ta), 158W (Tc)
Rds On (Max) @ Id, Vgs2.3 mOhm @ 20A, 10V
temperatura di esercizio-55°C ~ 175°C (TJ)
Tipo di montaggioSurface Mount
Pacchetto dispositivo fornitore5-DFN (5x6) (8-SOFL)
Pacchetto / caso8-PowerTDFN

NVMFS5830NLWFT3G Packaging

Customized Labels
Sealing
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NVMFS5830NLWFT3G FAQ

  • 1. How to order NVMFS5830NLWFT3G on Heisener?
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  • 2. How does Heisener guarantee that NVMFS5830NLWFT3G is from the original manufacturer or authorized agents?
    We have a professional and experienced quality control team to strictly verify and test the NVMFS5830NLWFT3G. All suppliers must pass our qualification reviews before they can publish their products including NVMFS5830NLWFT3G on Heisener; we pay more attention to the channels and quality of NVMFS5830NLWFT3G products than any other customer. We strictly implement supplier audits, so you can purchase with confidence.
  • 3. Are the NVMFS5830NLWFT3G price and inventory displayed accurate?
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  • 6. What is the process for return or replacement of NVMFS5830NLWFT3G?
    All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the NVMFS5830NLWFT3G we delivered, we will accept the replacement or return of the NVMFS5830NLWFT3G only when all of the below conditions are fulfilled:
    (1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.
    (2)We are informed of the defect described above within 90 days after the delivery of NVMFS5830NLWFT3G.
    (3)The PartNo is unused and only in the original unpacked packaging.
    Two processes to return the products:
    (1)Inform us within 90 days
    (2)Obtain Requesting Return Authorizations
  • 7.How to contact us to get technical supports, such as NVMFS5830NLWFT3G pin diagram, NVMFS5830NLWFT3G datasheet?
    If you need any after-sales service, please do not hesitate to contact us.

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NVMFS5830NLWFT3G garanzie

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Catene di fornitura globali - Risorse per distributori affidabili e autorizzati

Numero di parte Produttore Descrizione Azione

NVMFS5830NLWFT1G

D# NVMFS5830NLWFT1G

ON Semiconductor

Trans MOSFET N-CH 40V 185A 5-Pin DFN T/R - Bulk (Alt: NVMFS5830NLWFT1G)

RoHS: Compliant
0
Numero di parte Produttore Descrizione Azione

NVMFS5830NLWFT3G

D# NVMFS5830NLWFT3G-ND

ON Semiconductor

MOSFET N-CH 40V 29A 5DFN

0

NVMFS5830NLWFT1G

D# 2156-NVMFS5830NLWFT1G-ND

Rochester Electronics LLC

MOSFET N-CH 40V 29A 5DFN

4053
Numero di parte Produttore Descrizione Azione

NVMFS5830NLWFT1G

Rochester Electronics LLC

OEM/CM QUOTES ONLY | NO BROKERS

4864
Numero di parte Produttore Descrizione Azione

NVMFS5830NLWFT1G

D# 863-NVMFS5830NLWFT1G

ON Semiconductor

MOSFET Pwr MOSFET 40V 185A 2.3mOhm SGL N-CH

RoHS: Compliant
1345
Numero di parte Produttore Descrizione Azione

NVMFS5830NLWFT1G

ON Semiconductor

Power Field-Effect Transistor, 40V, 0.0036ohm, N-Channel, MOSFET

RoHS: Compliant
4053
Numero di parte Produttore Descrizione Azione

NVMFS5830NLWFT1G

MOUSER

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