Name: R6009KND3TL1
Brand: Rohm Semiconductor
SKU: R6009KND3TL1
Availability: InStock
Rating: 5 (136 reviews)

R6009KND3TL1

Per Riferimento Soltanto

Numero di parte	R6009KND3TL1
Produttore	Rohm Semiconductor
Descrizione	NCH 600V 9A TO-252, HIGH-SPEED S
Scheda dati
pacchetto	-
ECAD
A magazzino	7.500 piece(s)
Prezzo unitario	Request a Quote
Tempi di Consegna	Essere confermato
Tempo di consegna stimato	nov 13 - nov 18 (Scegli una spedizione rapida)
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Stiamo offrendo R6009KND3TL1 per il prezzo competitivo sul mercato globale, vi preghiamo di inviarci una richiesta di quote per i prezzi. Grazie!
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Specifiche R6009KND3TL1

Produttore	Rohm Semiconductor
Categoria	Dispositivi a semiconduttore discreti - Transistor - FET, MOSFET - Singoli
pacchetto	-
ECAD
Serie	-
Tipo FET	N-Channel
Tecnologia	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Corrente - Scarico continuo (Id) @ 25 ° C	9A (Tc)
Tensione dell'unità (Rds massimo attivato, Rds minimo attivo)	10V
Vgs (th) (Max) @ Id	5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	16.5 nC @ 10 V
Capacità di ingresso (Ciss) (Max) @ Vds	540 pF @ 25 V
Vgs (massimo)	±20V
Caratteristica FET	-
Dissipazione di potenza (max)	94W (Tc)
Rds On (Max) @ Id, Vgs	535mOhm @ 2.8A, 10V
temperatura di esercizio	150°C (TJ)
Tipo di montaggio	Surface Mount
Pacchetto dispositivo fornitore	TO-252
Pacchetto / caso	TO-252-3, DPAK (2 Leads + Tab), SC-63

R6009KND3TL1 Packaging

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6. What is the process for return or replacement of R6009KND3TL1?

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of R6009KND3TL1.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations
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R6009KND3TL1

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