Name: R6535ENZC8
Brand: Rohm Semiconductor
SKU: R6535ENZC8
Availability: InStock
Rating: 5 (71 reviews)

R6535ENZC8

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Numero di parte	R6535ENZC8
Produttore	Rohm Semiconductor
Descrizione	MOSFET N-CH 650V 35A TO3
Scheda dati
pacchetto	-
ECAD
A magazzino	0 piece(s)
Prezzo unitario	Request a Quote
Tempi di Consegna	Essere confermato
Tempo di consegna stimato	nov 13 - nov 18 (Scegli una spedizione rapida)
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Specifiche R6535ENZC8

Produttore	Rohm Semiconductor
Categoria	Dispositivi a semiconduttore discreti - Transistor - FET, MOSFET - Singoli
pacchetto	-
ECAD
Serie	-
Tipo FET	N-Channel
Tecnologia	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650 V
Corrente - Scarico continuo (Id) @ 25 ° C	35A (Tc)
Tensione dell'unità (Rds massimo attivato, Rds minimo attivo)	10V
Vgs (th) (Max) @ Id	4V @ 1.21mA
Gate Charge (Qg) (Max) @ Vgs	110 nC @ 10 V
Capacità di ingresso (Ciss) (Max) @ Vds	2600 pF @ 25 V
Vgs (massimo)	±20V
Caratteristica FET	-
Dissipazione di potenza (max)	102W (Tc)
Rds On (Max) @ Id, Vgs	115mOhm @ 18.1A, 10V
temperatura di esercizio	150°C (TJ)
Tipo di montaggio	Through Hole
Pacchetto dispositivo fornitore	TO-3PF
Pacchetto / caso	TO-3P-3 Full Pack

R6535ENZC8 Packaging

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of R6535ENZC8.

(3)The PartNo is unused and only in the original unpacked packaging.

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(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations
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R6535ENZC8

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