Name: RD3L03BBGTL1
Brand: Rohm Semiconductor
SKU: RD3L03BBGTL1
Availability: InStock
Rating: 5 (77 reviews)

RD3L03BBGTL1

Per Riferimento Soltanto

Numero di parte	RD3L03BBGTL1
Produttore	Rohm Semiconductor
Descrizione	NCH 60V 50A, TO-252, POWER MOSFE
Scheda dati
pacchetto	-
ECAD
A magazzino	6.324 piece(s)
Prezzo unitario	Request a Quote
Tempi di Consegna	Essere confermato
Tempo di consegna stimato	set 23 - set 28 (Scegli una spedizione rapida)
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Specifiche RD3L03BBGTL1

Produttore	Rohm Semiconductor
Categoria	Dispositivi a semiconduttore discreti - Transistor - FET, MOSFET - Singoli
pacchetto	-
ECAD
Serie	-
Tipo FET	N-Channel
Tecnologia	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Corrente - Scarico continuo (Id) @ 25 ° C	35A (Tc)
Tensione dell'unità (Rds massimo attivato, Rds minimo attivo)	4.5V, 10V
Vgs (th) (Max) @ Id	2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	14 nC @ 10 V
Capacità di ingresso (Ciss) (Max) @ Vds	970 pF @ 30 V
Vgs (massimo)	±20V
Caratteristica FET	-
Dissipazione di potenza (max)	50W (Tc)
Rds On (Max) @ Id, Vgs	11.3mOhm @ 35A, 10V
temperatura di esercizio	150°C (TJ)
Tipo di montaggio	Surface Mount
Pacchetto dispositivo fornitore	TO-252
Pacchetto / caso	TO-252-3, DPAK (2 Leads + Tab), SC-63

RD3L03BBGTL1 Packaging

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

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RD3L03BBGTL1

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