Name: RS1E350BNTB1
Brand: Rohm Semiconductor
SKU: RS1E350BNTB1
Availability: InStock
Rating: 5 (195 reviews)

RS1E350BNTB1

Per Riferimento Soltanto

Numero di parte	RS1E350BNTB1
Produttore	Rohm Semiconductor
Descrizione	NCH 30V 80A POWER MOSFET: RS1E35
Scheda dati
pacchetto	-
ECAD
A magazzino	7.200 piece(s)
Prezzo unitario	Request a Quote
Tempi di Consegna	Essere confermato
Tempo di consegna stimato	set 23 - set 28 (Scegli una spedizione rapida)
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Stiamo offrendo RS1E350BNTB1 per il prezzo competitivo sul mercato globale, vi preghiamo di inviarci una richiesta di quote per i prezzi. Grazie!
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Specifiche RS1E350BNTB1

Produttore	Rohm Semiconductor
Categoria	Dispositivi a semiconduttore discreti - Transistor - FET, MOSFET - Singoli
pacchetto	-
ECAD
Serie	-
Tipo FET	N-Channel
Tecnologia	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Corrente - Scarico continuo (Id) @ 25 ° C	35A (Ta), 80A (Tc)
Tensione dell'unità (Rds massimo attivato, Rds minimo attivo)	4.5V, 10V
Vgs (th) (Max) @ Id	2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	185 nC @ 10 V
Capacità di ingresso (Ciss) (Max) @ Vds	7900 pF @ 15 V
Vgs (massimo)	±20V
Caratteristica FET	-
Dissipazione di potenza (max)	3W (Ta), 35W (Tc)
Rds On (Max) @ Id, Vgs	1.7mOhm @ 35A, 10V
temperatura di esercizio	150°C (TJ)
Tipo di montaggio	Surface Mount
Pacchetto dispositivo fornitore	8-HSOP
Pacchetto / caso	8-PowerTDFN

RS1E350BNTB1 Packaging

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of RS1E350BNTB1.

(3)The PartNo is unused and only in the original unpacked packaging.

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(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations
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RS1E350BNTB1

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