Pagina 33 - Transistor - Bipolari (BJT) - RF | Dispositivi a semiconduttore discreti | Heisener Electronics
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Transistor - Bipolari (BJT) - RF

Record 1.633
Pagina  33/55
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Voltage - Collector Emitter Breakdown (Max)
Frequency - Transition
Noise Figure (dB Typ @ f)
Gain
Power - Max
DC Current Gain (hFE) (Min) @ Ic, Vce
Current - Collector (Ic) (Max)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
JANTXV2N4957
Microsemi Corporation

TRANS PNP 30V 30MA TO72

  • Transistor Type: PNP
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): 3.5dB @ 450MHz
  • Gain: 25dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-72-3 Metal Can
  • Supplier Device Package: TO-72
pacchetto: TO-72-3 Metal Can
Azione3.536
30V
-
3.5dB @ 450MHz
25dB
200mW
30 @ 5mA, 10V
30mA
-65°C ~ 200°C (TJ)
Through Hole
TO-72-3 Metal Can
TO-72
hot 2SC5011-T1-A
CEL

RF TRANSISTOR NPN SOT-343

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 6.5GHz
  • Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
  • Gain: 13dB
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: SOT-343
pacchetto: SC-82A, SOT-343
Azione19.704
12V
6.5GHz
1.1dB @ 1GHz
13dB
150mW
50 @ 20mA, 10V
100mA
150°C (TJ)
Surface Mount
SC-82A, SOT-343
SOT-343
MS2203
Microsemi Corporation

TRANS RF BIPO 5W 300MA M220

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 1.09GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 10.8dB ~ 12.3dB
  • Power - Max: 5W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V
  • Current - Collector (Ic) (Max): 300mA
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M220
  • Supplier Device Package: M220
pacchetto: M220
Azione6.336
20V
1.09GHz
-
10.8dB ~ 12.3dB
5W
120 @ 100mA, 5V
300mA
200°C (TJ)
Chassis Mount
M220
M220
NE68033-T1B-R44-A
CEL

RF TRANSISTOR NPN SOT-23

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 10GHz
  • Noise Figure (dB Typ @ f): 1.8dB @ 2GHz
  • Gain: 9dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 6V
  • Current - Collector (Ic) (Max): 35mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione7.552
10V
10GHz
1.8dB @ 2GHz
9dB
200mW
80 @ 10mA, 6V
35mA
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
hot NESG2107M33-T3-A
CEL

TRANS NPN 2GHZ M33

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 5V
  • Frequency - Transition: 10GHz
  • Noise Figure (dB Typ @ f): 0.9dB ~ 1.5dB @ 2GHz
  • Gain: 7dB ~ 10dB
  • Power - Max: 130mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 5mA, 1V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, Flat Leads
  • Supplier Device Package: 3-SuperMiniMold (M33)
pacchetto: 3-SMD, Flat Leads
Azione77.796
5V
10GHz
0.9dB ~ 1.5dB @ 2GHz
7dB ~ 10dB
130mW
140 @ 5mA, 1V
100mA
150°C (TJ)
Surface Mount
3-SMD, Flat Leads
3-SuperMiniMold (M33)
NE685M03-T1-A
CEL

TRANSISTOR NPN 2GHZ M03

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 5V
  • Frequency - Transition: 12GHz
  • Noise Figure (dB Typ @ f): 1.5dB ~ 2.5dB @ 2GHz
  • Gain: -
  • Power - Max: 125mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 3V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-623F
  • Supplier Device Package: M03
pacchetto: SOT-623F
Azione4.336
5V
12GHz
1.5dB ~ 2.5dB @ 2GHz
-
125mW
75 @ 10mA, 3V
30mA
150°C (TJ)
Surface Mount
SOT-623F
M03
MPSH10G
ON Semiconductor

TRANS NPN VHF/UHF SS 25V TO92

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Frequency - Transition: 650MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 350mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
pacchetto: TO-226-3, TO-92-3 (TO-226AA)
Azione4.992
25V
650MHz
-
-
350mW
60 @ 4mA, 10V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
AT-41486-BLK
Broadcom Limited

TRANS SIL LOW NOISE BIPOLAR 86PL

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 8GHz
  • Noise Figure (dB Typ @ f): 1.4dB ~ 3dB @ 1GHz ~ 4GHz
  • Gain: 9dB ~ 18dB
  • Power - Max: 500mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 8V
  • Current - Collector (Ic) (Max): 60mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-86
  • Supplier Device Package: 86 Plastic
pacchetto: SOT-86
Azione6.112
12V
8GHz
1.4dB ~ 3dB @ 1GHz ~ 4GHz
9dB ~ 18dB
500mW
30 @ 10mA, 8V
60mA
150°C (TJ)
Surface Mount
SOT-86
86 Plastic
NE85619-T1
CEL

TRANS NPN 1GHZ SMD

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 4.5GHz
  • Noise Figure (dB Typ @ f): 1.4dB ~ 2.2dB @ 1GHz ~ 2GHz
  • Gain: 6.5dB ~ 12.5dB
  • Power - Max: 100mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 10V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-523
  • Supplier Device Package: SOT-523
pacchetto: SOT-523
Azione2.736
12V
4.5GHz
1.4dB ~ 2.2dB @ 1GHz ~ 2GHz
6.5dB ~ 12.5dB
100mW
80 @ 20mA, 10V
100mA
150°C (TJ)
Surface Mount
SOT-523
SOT-523
BFG520/XR,235
NXP

TRANS RF NPN 9GHZ 15V SOT143

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 9GHz
  • Noise Figure (dB Typ @ f): 1.1dB ~ 2.1dB @ 900MHz
  • Gain: -
  • Power - Max: 300mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 6V
  • Current - Collector (Ic) (Max): 70mA
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-143R
  • Supplier Device Package: SOT-143R
pacchetto: SOT-143R
Azione6.944
15V
9GHz
1.1dB ~ 2.1dB @ 900MHz
-
300mW
60 @ 20mA, 6V
70mA
175°C (TJ)
Surface Mount
SOT-143R
SOT-143R
BFG424W,115
NXP

TRANS NPN 10V 30MA SOT343R

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 4.5V
  • Frequency - Transition: 25GHz
  • Noise Figure (dB Typ @ f): 0.8dB ~ 1.2dB @ 900MHz ~ 2GHz
  • Gain: 22dB
  • Power - Max: 135mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 25mA, 2V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: CMPAK-4
pacchetto: SC-82A, SOT-343
Azione2.896
4.5V
25GHz
0.8dB ~ 1.2dB @ 900MHz ~ 2GHz
22dB
135mW
50 @ 25mA, 2V
30mA
150°C (TJ)
Surface Mount
SC-82A, SOT-343
CMPAK-4
BFG505/X,235
NXP

TRANS RF NPN 9GHZ SOT143B

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 9GHz
  • Noise Figure (dB Typ @ f): 1.2dB ~ 1.9dB @ 900MHz ~ 2GHz
  • Gain: -
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 6V
  • Current - Collector (Ic) (Max): 18mA
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-253-4, TO-253AA
  • Supplier Device Package: SOT-143B
pacchetto: TO-253-4, TO-253AA
Azione7.936
15V
9GHz
1.2dB ~ 1.9dB @ 900MHz ~ 2GHz
-
150mW
60 @ 5mA, 6V
18mA
175°C (TJ)
Surface Mount
TO-253-4, TO-253AA
SOT-143B
TAN350
Microsemi Corporation

TRANS RF BIPO 1450W 40A 55ST1

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: 960MHz ~ 1.215GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 7dB ~ 7.5dB
  • Power - Max: 1450W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
  • Current - Collector (Ic) (Max): 40A
  • Operating Temperature: 230°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55ST
  • Supplier Device Package: 55ST
pacchetto: 55ST
Azione7.328
65V
960MHz ~ 1.215GHz
-
7dB ~ 7.5dB
1450W
10 @ 1A, 5V
40A
230°C (TJ)
Chassis Mount
55ST
55ST
MPA201
Microsemi Corporation

TRANS RF BIPO 6W 300MA 55AU2

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 22V
  • Frequency - Transition: 2GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 13dB
  • Power - Max: 6W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V
  • Current - Collector (Ic) (Max): 300mA
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55AU
  • Supplier Device Package: 55AU
pacchetto: 55AU
Azione6.480
22V
2GHz
-
13dB
6W
20 @ 100mA, 5V
300mA
200°C (TJ)
Chassis Mount
55AU
55AU
MCH4014-TL-H
ON Semiconductor

TRANS NPN 12V 30MA MCPH4

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 10GHz
  • Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
  • Gain: 18dB
  • Power - Max: 350mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Flat Leads
  • Supplier Device Package: 4-MCPH
pacchetto: 4-SMD, Flat Leads
Azione3.248
12V
10GHz
1.2dB @ 1GHz
18dB
350mW
60 @ 5mA, 5V
30mA
150°C (TJ)
Surface Mount
4-SMD, Flat Leads
4-MCPH
SS9018GBU
Fairchild/ON Semiconductor

TRANSISTOR RF NPN 30V 50MA TO-92

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 1.1GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 400mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 72 @ 1mA, 5V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
pacchetto: TO-226-3, TO-92-3 (TO-226AA)
Azione4.080
15V
1.1GHz
-
-
400mW
72 @ 1mA, 5V
50mA
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
hot SD1274-01
STMicroelectronics

TRANS NPN RF MICROWAVE VHF M113

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 16V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: 10dB
  • Power - Max: 70W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 250mA, 5V
  • Current - Collector (Ic) (Max): 8A
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: M113
  • Supplier Device Package: M113
pacchetto: M113
Azione6.704
16V
-
-
10dB
70W
20 @ 250mA, 5V
8A
-
Surface Mount
M113
M113
hot MT3S16U(TE85L,F)
Toshiba Semiconductor and Storage

TRANS RF NPN 5V 1GHZ USM

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 5V
  • Frequency - Transition: 4GHz
  • Noise Figure (dB Typ @ f): 2.4dB @ 1GHz
  • Gain: 4.5dBi
  • Power - Max: 100mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 1V
  • Current - Collector (Ic) (Max): 60mA
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: USM
pacchetto: SC-70, SOT-323
Azione144.000
5V
4GHz
2.4dB @ 1GHz
4.5dBi
100mW
80 @ 5mA, 1V
60mA
125°C (TJ)
Surface Mount
SC-70, SOT-323
USM
BFU610F,115
NXP

TRANSISTOR NPN SOT343F

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 5.5V
  • Frequency - Transition: 15GHz
  • Noise Figure (dB Typ @ f): 0.9dB ~ 1.7dB @ 1.5GHz ~ 5.8GHz
  • Gain: 13.5dB ~ 23.5dB
  • Power - Max: 136mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 1mA, 2V
  • Current - Collector (Ic) (Max): 10mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-343F
  • Supplier Device Package: 4-DFP
pacchetto: SOT-343F
Azione27.318
5.5V
15GHz
0.9dB ~ 1.7dB @ 1.5GHz ~ 5.8GHz
13.5dB ~ 23.5dB
136mW
90 @ 1mA, 2V
10mA
150°C (TJ)
Surface Mount
SOT-343F
4-DFP
CA3227M96
Intersil

SMALL SIGNAL BIPOLAR TRANSISTOR

  • Transistor Type: 5 NPN
  • Voltage - Collector Emitter Breakdown (Max): 8V
  • Frequency - Transition: 3GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 85mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1mA, 6V
  • Current - Collector (Ic) (Max): 20mA
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 16-SOIC
pacchetto: -
Request a Quote
8V
3GHz
-
-
85mW
40 @ 1mA, 6V
20mA
-
Surface Mount
16-SOIC (0.154", 3.90mm Width)
16-SOIC
NESG340033-T1B-A
Renesas Electronics Corporation

SMALL SIGNAL BIPOLAR TRANSISTOR

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 5.5V
  • Frequency - Transition: 10GHz
  • Noise Figure (dB Typ @ f): 0.7dB @ 1GHz
  • Gain: 12dB
  • Power - Max: 480mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 15mA, 3.3V
  • Current - Collector (Ic) (Max): 400mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: 3-MINIMOLD
pacchetto: -
Request a Quote
5.5V
10GHz
0.7dB @ 1GHz
12dB
480mW
200 @ 15mA, 3.3V
400mA
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
3-MINIMOLD
BFR740L3RHE6327XTSA1
Infineon Technologies

RF TRANS NPN 4.7V 42GHZ TSLP-3

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 4.7V
  • Frequency - Transition: 42GHz
  • Noise Figure (dB Typ @ f): 0.5dB ~ 0.8dB @ 1.8GHz ~ 6Ghz
  • Gain: 24.5dB
  • Power - Max: 160mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 25mA, 3V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-101, SOT-883
  • Supplier Device Package: PG-TSLP-3
pacchetto: -
Azione4.377
4.7V
42GHz
0.5dB ~ 0.8dB @ 1.8GHz ~ 6Ghz
24.5dB
160mW
160 @ 25mA, 3V
30mA
150°C (TJ)
Surface Mount
SC-101, SOT-883
PG-TSLP-3
PH3135-25S
MACOM Technology Solutions

TRANSISTOR,25W,3.1-3.5GHZ,2US,10

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: 3.5GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 7.5dB
  • Power - Max: 195W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): 3A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 2L-FLG
  • Supplier Device Package: 2L-FLG
pacchetto: -
Request a Quote
65V
3.5GHz
-
7.5dB
195W
-
3A
200°C (TJ)
Chassis Mount
2L-FLG
2L-FLG
MRF429
MACOM Technology Solutions

TRANS RF NPN 50V 16A 211-11

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: 15dB
  • Power - Max: 150W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V
  • Current - Collector (Ic) (Max): 16A
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Package / Case: 211-11, Style 2
  • Supplier Device Package: 211-11, Style 2
pacchetto: -
Request a Quote
50V
-
-
15dB
150W
10 @ 5A, 5V
16A
-
Chassis Mount
211-11, Style 2
211-11, Style 2
MRF1150MB
MACOM Technology Solutions

TRANS NPN 150W 906MHZ-1215MHZ

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 70V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: 9.8dB
  • Power - Max: 150W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V
  • Current - Collector (Ic) (Max): 12A
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Package / Case: 332A-03
  • Supplier Device Package: 332A-03
pacchetto: -
Request a Quote
70V
-
-
9.8dB
150W
10 @ 5A, 5V
12A
-
Chassis Mount
332A-03
332A-03
PH1214-40M
MACOM Technology Solutions

TRANSISTOR,40W,40V,1.20-1.40GHZ

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 70V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: 8.5dB
  • Power - Max: 100W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): 3A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 2L-FLG
  • Supplier Device Package: -
pacchetto: -
Request a Quote
70V
-
-
8.5dB
100W
-
3A
200°C (TJ)
Chassis Mount
2L-FLG
-
2SC4226-A
CEL

RF TRANS NPN 12V 4.5GHZ SC70-3

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 4.5GHz
  • Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
  • Gain: 9dB
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 7mA, 3V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SC-70-3
pacchetto: -
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12V
4.5GHz
1.2dB @ 1GHz
9dB
150mW
40 @ 7mA, 3V
100mA
150°C (TJ)
Surface Mount
SC-70, SOT-323
SC-70-3
HFA3127MJ-883
Harris Corporation

DUAL MARKED (5962-9474901MEA)

  • Transistor Type: 5 NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 8GHz
  • Noise Figure (dB Typ @ f): 3.5dB @ 1GHz
  • Gain: -
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 2V
  • Current - Collector (Ic) (Max): 65mA
  • Operating Temperature: -55°C ~ 125°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 16-CDIP (0.300", 7.62mm)
  • Supplier Device Package: 16-CERDIP
pacchetto: -
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12V
8GHz
3.5dB @ 1GHz
-
150mW
40 @ 10mA, 2V
65mA
-55°C ~ 125°C (TJ)
Through Hole
16-CDIP (0.300", 7.62mm)
16-CERDIP
MS2210A
Microsemi Corporation

RF POWER TRANSISTOR

  • Transistor Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
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-
-
-
-
-
-
-
-
-
-
-
2SC5231C9-TL-E
onsemi

2SC5231 - RF SMALL SIGNAL BIPOLA

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 7GHz
  • Noise Figure (dB Typ @ f): 1dB @ 1GHz
  • Gain: 12dB
  • Power - Max: 100mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 20mA, 5V
  • Current - Collector (Ic) (Max): 70mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-75, SOT-416
  • Supplier Device Package: 3-SMCP
pacchetto: -
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10V
7GHz
1dB @ 1GHz
12dB
100mW
135 @ 20mA, 5V
70mA
150°C (TJ)
Surface Mount
SC-75, SOT-416
3-SMCP