Pagina 109 - Transistor - FET, MOSFET - Array | Dispositivi a semiconduttore discreti | Heisener Electronics
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Transistor - FET, MOSFET - Array

Record 3.259
Pagina  109/109
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
BSO330N02KGFUMA1
Infineon Technologies

MOSFET 2N-CH 20V 5.4A 8DSO

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 5.4A
  • Rds On (Max) @ Id, Vgs: 30 mOhm @ 6.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 20µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.9nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 730pF @ 10V
  • Power - Max: 1.4W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: PG-DSO-8
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione5.072
Logic Level Gate
20V
5.4A
30 mOhm @ 6.5A, 4.5V
1.2V @ 20µA
4.9nC @ 4.5V
730pF @ 10V
1.4W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
PG-DSO-8
IRF7902PBF
Infineon Technologies

MOSFET 2N-CH 30V 6.4A/9.7A 8SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6.4A, 9.7A
  • Rds On (Max) @ Id, Vgs: 22.6 mOhm @ 6.4A, 10V
  • Vgs(th) (Max) @ Id: 2.25V @ 25µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 15V
  • Power - Max: 1.4W, 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione6.224
Logic Level Gate
30V
6.4A, 9.7A
22.6 mOhm @ 6.4A, 10V
2.25V @ 25µA
6.9nC @ 4.5V
580pF @ 15V
1.4W, 2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
AO6804A_101
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 20V 5A 6TSOP

  • FET Type: 2 N-Channel (Dual) Common Drain
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 5A
  • Rds On (Max) @ Id, Vgs: 28 mOhm @ 5A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 225pF @ 10V
  • Power - Max: 1.3W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-74, SOT-457
  • Supplier Device Package: 6-TSOP
pacchetto: SC-74, SOT-457
Azione2.816
Logic Level Gate
20V
5A
28 mOhm @ 5A, 4.5V
1V @ 250µA
7.5nC @ 4.5V
225pF @ 10V
1.3W
-55°C ~ 150°C (TJ)
Surface Mount
SC-74, SOT-457
6-TSOP
AO4807_101
Alpha & Omega Semiconductor Inc.

MOSFET 2P-CH 30V 6A 8-SOIC

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6A
  • Rds On (Max) @ Id, Vgs: 35 mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 15V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione7.744
Logic Level Gate
30V
6A
35 mOhm @ 6A, 10V
2.4V @ 250µA
16nC @ 10V
760pF @ 15V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
ECH8649-TL-H
ON Semiconductor

MOSFET 2N-CH 20V 7.5A ECH8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 7.5A
  • Rds On (Max) @ Id, Vgs: 17 mOhm @ 4A, 4.5V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 10.8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 10V
  • Power - Max: 1.5W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: 8-ECH
pacchetto: 8-SMD, Flat Lead
Azione3.376
Logic Level Gate
20V
7.5A
17 mOhm @ 4A, 4.5V
-
10.8nC @ 4.5V
1060pF @ 10V
1.5W
150°C (TJ)
Surface Mount
8-SMD, Flat Lead
8-ECH
hot SI3909DV-T1-E3
Vishay Siliconix

MOSFET 2P-CH 20V 6TSOP

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 200 mOhm @ 1.8A, 4.5V
  • Vgs(th) (Max) @ Id: 500mV @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.15W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: 6-TSOP
pacchetto: SOT-23-6 Thin, TSOT-23-6
Azione535.764
Logic Level Gate
20V
-
200 mOhm @ 1.8A, 4.5V
500mV @ 250µA (Min)
4nC @ 4.5V
-
1.15W
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
6-TSOP
hot SI4563DY-T1-E3
Vishay Siliconix

MOSFET N/P-CH 40V 8A 8-SOIC

  • FET Type: N and P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 8A
  • Rds On (Max) @ Id, Vgs: 16 mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2390pF @ 20V
  • Power - Max: 3.25W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione133.716
Standard
40V
8A
16 mOhm @ 5A, 10V
2V @ 250µA
85nC @ 10V
2390pF @ 20V
3.25W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
ALD212904SAL
Advanced Linear Devices Inc.

MOSFET 2N-CH 10.6V 0.08A 8SOIC

  • FET Type: 2 N-Channel (Dual) Matched Pair
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 10.6V
  • Current - Continuous Drain (Id) @ 25°C: 80mA
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: 20mV @ 10µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 500mW
  • Operating Temperature: 0°C ~ 70°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione3.504
Logic Level Gate
10.6V
80mA
-
20mV @ 10µA
-
-
500mW
0°C ~ 70°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
DMC1029UFDB-13
Diodes Incorporated

MOSFET N/P-CH 12V 6UDFN

  • FET Type: N and P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 5.6A, 3.8A
  • Rds On (Max) @ Id, Vgs: 29 mOhm @ 5A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 19.6nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 914pF @ 6V
  • Power - Max: 1.4W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: U-DFN2020-6 (Type B)
pacchetto: 6-UDFN Exposed Pad
Azione6.064
Standard
12V
5.6A, 3.8A
29 mOhm @ 5A, 4.5V
1V @ 250µA
19.6nC @ 8V
914pF @ 6V
1.4W
-55°C ~ 150°C (TJ)
Surface Mount
6-UDFN Exposed Pad
U-DFN2020-6 (Type B)
TSM8568CS RLG
TSC America Inc.

MOSFET, COMPLEMENTARY, N-CHANNEL

  • FET Type: N and P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Tc), 13A (Tc)
  • Rds On (Max) @ Id, Vgs: 16 mOhm @ 8A, 10V, 24 mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V, 11nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 646pF @ 15V, 1089pF @ 15V
  • Power - Max: 6W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione7.120
Standard
30V
15A (Tc), 13A (Tc)
16 mOhm @ 8A, 10V, 24 mOhm @ 7A, 10V
2.5V @ 250µA
7nC @ 4.5V, 11nC @ 4.5V
646pF @ 15V, 1089pF @ 15V
6W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
hot IRF7343TRPBF
Infineon Technologies

MOSFET N/P-CH 55V 8-SOIC

  • FET Type: N and P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 4.7A, 3.4A
  • Rds On (Max) @ Id, Vgs: 50 mOhm @ 4.7A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione1.019.832
Standard
55V
4.7A, 3.4A
50 mOhm @ 4.7A, 10V
1V @ 250µA
36nC @ 10V
740pF @ 25V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot IRF7342TRPBF
Infineon Technologies

MOSFET 2P-CH 55V 3.4A 8-SOIC

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 3.4A
  • Rds On (Max) @ Id, Vgs: 105 mOhm @ 3.4A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 25V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione728.520
Logic Level Gate
55V
3.4A
105 mOhm @ 3.4A, 10V
1V @ 250µA
38nC @ 10V
690pF @ 25V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
FDMD8240L
Fairchild/ON Semiconductor

MOSFET 2N-CH 40V 23A

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 23A
  • Rds On (Max) @ Id, Vgs: 2.6 mOhm @ 23A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4230pF @ 20V
  • Power - Max: 2.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 12-PowerWDFN
  • Supplier Device Package: 12-Power3.3x5
pacchetto: 12-PowerWDFN
Azione5.904
Standard
40V
23A
2.6 mOhm @ 23A, 10V
3V @ 250µA
56nC @ 10V
4230pF @ 20V
2.1W
-55°C ~ 150°C (TJ)
Surface Mount
12-PowerWDFN
12-Power3.3x5
hot SI5513CDC-T1-GE3
Vishay Siliconix

MOSFET N/P-CH 20V 4A 1206-8

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4A, 3.7A
  • Rds On (Max) @ Id, Vgs: 55 mOhm @ 4.4A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 285pF @ 10V
  • Power - Max: 3.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: 1206-8 ChipFET?
pacchetto: 8-SMD, Flat Lead
Azione38.100
Logic Level Gate
20V
4A, 3.7A
55 mOhm @ 4.4A, 4.5V
1.5V @ 250µA
4.2nC @ 5V
285pF @ 10V
3.1W
-55°C ~ 150°C (TJ)
Surface Mount
8-SMD, Flat Lead
1206-8 ChipFET?
SSM6P41FE(TE85L,F)
Toshiba Semiconductor and Storage

MOSFET 2P-CH 20V 0.72A ES6

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 720mA
  • Rds On (Max) @ Id, Vgs: 300 mOhm @ 400mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 1.76nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V
  • Power - Max: 150mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6 (1.6x1.6)
pacchetto: SOT-563, SOT-666
Azione7.456
Logic Level Gate
20V
720mA
300 mOhm @ 400mA, 4.5V
1V @ 1mA
1.76nC @ 4.5V
110pF @ 10V
150mW
150°C (TJ)
Surface Mount
SOT-563, SOT-666
ES6 (1.6x1.6)
hot DMN601VK-7
Diodes Incorporated

MOSFET 2N-CH 60V 0.305A SOT-563

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 305mA
  • Rds On (Max) @ Id, Vgs: 2 Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
  • Power - Max: 250mW
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
pacchetto: SOT-563, SOT-666
Azione344.736
Logic Level Gate
60V
305mA
2 Ohm @ 500mA, 10V
2.5V @ 250µA
-
50pF @ 25V
250mW
-65°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
hot NTZD3154NT5G
ON Semiconductor

MOSFET 2N-CH 20V 0.54A SOT563

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 540mA
  • Rds On (Max) @ Id, Vgs: 550 mOhm @ 540mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V
  • Power - Max: 250mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563-6
pacchetto: SOT-563, SOT-666
Azione7.109.292
Standard
20V
540mA
550 mOhm @ 540mA, 4.5V
1V @ 250µA
2.5nC @ 4.5V
150pF @ 16V
250mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563-6
DMG6301UDW-7
Diodes Incorporated

MOSFET 2N-CH 25V 0.24A SOT363

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 240mA
  • Rds On (Max) @ Id, Vgs: 4 Ohm @ 400mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.36nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 27.9pF @ 10V
  • Power - Max: 300mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
pacchetto: 6-TSSOP, SC-88, SOT-363
Azione3.088
Standard
25V
240mA
4 Ohm @ 400mA, 4.5V
1.5V @ 250µA
0.36nC @ 4.5V
27.9pF @ 10V
300mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
hot UM6K31NTN
Rohm Semiconductor

MOSFET 2N-CH 60V 0.25A UMT6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate, 2.5V Drive
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 250mA
  • Rds On (Max) @ Id, Vgs: 2.4 Ohm @ 250mA, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 25V
  • Power - Max: 150mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: UMT6
pacchetto: 6-TSSOP, SC-88, SOT-363
Azione782.052
Logic Level Gate, 2.5V Drive
60V
250mA
2.4 Ohm @ 250mA, 10V
2.3V @ 1mA
-
15pF @ 25V
150mW
150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
UMT6