Pagina 2 - Transistor - FET, MOSFET - Array | Dispositivi a semiconduttore discreti | Heisener Electronics
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Transistor - FET, MOSFET - Array

Record 3.259
Pagina  2/109
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
hot IRF7389TR
Infineon Technologies

MOSFET N/P-CH 30V 8-SOIC

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 29 mOhm @ 5.8A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V
  • Power - Max: 2.5W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione13.944
Logic Level Gate
30V
-
29 mOhm @ 5.8A, 10V
1V @ 250µA
33nC @ 10V
650pF @ 25V
2.5W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
AOC2802_001
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 4WLCSP

  • FET Type: 2 N-Channel (Dual) Common Drain
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 6A
  • Rds On (Max) @ Id, Vgs: 35 mOhm @ 3A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10.4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 10V
  • Power - Max: 1.3W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-UFBGA, WLCSP
  • Supplier Device Package: 4-WLCSP (1.57x1.57)
pacchetto: 4-UFBGA, WLCSP
Azione2.752
Standard
20V
6A
35 mOhm @ 3A, 4.5V
1.5V @ 250µA
10.4nC @ 4.5V
1200pF @ 10V
1.3W
-55°C ~ 150°C (TJ)
Surface Mount
4-UFBGA, WLCSP
4-WLCSP (1.57x1.57)
hot ECH8601M-C-TL-H
ON Semiconductor

MOSFET 2N-CH 24V 8A ECH8

  • FET Type: 2 N-Channel (Dual) Common Drain
  • FET Feature: Logic Level Gate, 2.5V Drive
  • Drain to Source Voltage (Vdss): 24V
  • Current - Continuous Drain (Id) @ 25°C: 8A
  • Rds On (Max) @ Id, Vgs: 23 mOhm @ 4A, 4.5V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.5W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: 8-ECH
pacchetto: 8-SMD, Flat Lead
Azione273.552
Logic Level Gate, 2.5V Drive
24V
8A
23 mOhm @ 4A, 4.5V
-
7.5nC @ 4.5V
-
1.5W
150°C (TJ)
Surface Mount
8-SMD, Flat Lead
8-ECH
hot SQ9945AEY-T1-E3
Vishay Siliconix

MOSFET 2N-CH 60V 3.7A 8SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 3.7A
  • Rds On (Max) @ Id, Vgs: 80 mOhm @ 3.7A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 2.4W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione1.401.312
Logic Level Gate
60V
3.7A
80 mOhm @ 3.7A, 10V
3V @ 250µA
20nC @ 10V
-
2.4W
-55°C ~ 175°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot SI7901EDN-T1-E3
Vishay Siliconix

MOSFET 2P-CH 20V 4.3A 1212-8

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.3A
  • Rds On (Max) @ Id, Vgs: 48 mOhm @ 6.3A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 800µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.3W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? 1212-8 Dual
  • Supplier Device Package: PowerPAK? 1212-8 Dual
pacchetto: PowerPAK? 1212-8 Dual
Azione110.400
Logic Level Gate
20V
4.3A
48 mOhm @ 6.3A, 4.5V
1V @ 800µA
18nC @ 4.5V
-
1.3W
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? 1212-8 Dual
PowerPAK? 1212-8 Dual
hot SI6969DQ-T1-E3
Vishay Siliconix

MOSFET 2P-CH 12V 8TSSOP

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 34 mOhm @ 4.6A, 4.5V
  • Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 40nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
pacchetto: 8-TSSOP (0.173", 4.40mm Width)
Azione36.000
Logic Level Gate
12V
-
34 mOhm @ 4.6A, 4.5V
450mV @ 250µA (Min)
40nC @ 4.5V
-
1.1W
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
hot SI6969BDQ-T1-GE3
Vishay Siliconix

MOSFET 2P-CH 12V 4A 8TSSOP

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 4A
  • Rds On (Max) @ Id, Vgs: 30 mOhm @ 4.6A, 4.5V
  • Vgs(th) (Max) @ Id: 800mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 830mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
pacchetto: 8-TSSOP (0.173", 4.40mm Width)
Azione10.980
Logic Level Gate
12V
4A
30 mOhm @ 4.6A, 4.5V
800mV @ 250µA
25nC @ 4.5V
-
830mW
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
hot FDW2502P
Fairchild/ON Semiconductor

MOSFET 2P-CH 20V 4.4A 8-TSSO

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.4A
  • Rds On (Max) @ Id, Vgs: 35 mOhm @ 4.4A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 21nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1465pF @ 10V
  • Power - Max: 600mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
pacchetto: 8-TSSOP (0.173", 4.40mm Width)
Azione237.648
Logic Level Gate
20V
4.4A
35 mOhm @ 4.4A, 4.5V
1.5V @ 250µA
21nC @ 5V
1465pF @ 10V
600mW
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
hot NTMD6N03R2
ON Semiconductor

MOSFET 2N-CH 30V 6A 8SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6A
  • Rds On (Max) @ Id, Vgs: 32 mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 24V
  • Power - Max: 1.29W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione582.492
Logic Level Gate
30V
6A
32 mOhm @ 6A, 10V
2.5V @ 250µA
30nC @ 10V
950pF @ 24V
1.29W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
hot PMGD8000LN,115
NXP

MOSFET 2N-CH 30V 0.125A 6TSSOP

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 125mA
  • Rds On (Max) @ Id, Vgs: 8 Ohm @ 10mA, 4V
  • Vgs(th) (Max) @ Id: 1.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 18.5pF @ 5V
  • Power - Max: 200mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: 6-TSSOP
pacchetto: 6-TSSOP, SC-88, SOT-363
Azione142.200
Logic Level Gate
30V
125mA
8 Ohm @ 10mA, 4V
1.5V @ 100µA
0.35nC @ 4.5V
18.5pF @ 5V
200mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
6-TSSOP
APTM50DUM35TG
Microsemi Corporation

MOSFET 2N-CH 500V 99A SP4

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 99A
  • Rds On (Max) @ Id, Vgs: 39 mOhm @ 49.5A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
  • Power - Max: 781W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP4
  • Supplier Device Package: SP4
pacchetto: SP4
Azione3.216
Standard
500V
99A
39 mOhm @ 49.5A, 10V
5V @ 5mA
280nC @ 10V
14000pF @ 25V
781W
-40°C ~ 150°C (TJ)
Chassis Mount
SP4
SP4
GWM180-004X2-SMD
IXYS

MOSFET 6N-CH 40V 180A 17-SMD

  • FET Type: 6 N-Channel (3-Phase Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 180A
  • Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 17-SMD, Gull Wing
  • Supplier Device Package: ISOPLUS-DIL?
pacchetto: 17-SMD, Gull Wing
Azione6.064
Standard
40V
180A
2.5 mOhm @ 100A, 10V
4.5V @ 1mA
110nC @ 10V
-
-
-55°C ~ 175°C (TJ)
Surface Mount
17-SMD, Gull Wing
ISOPLUS-DIL?
DMHT6016LFJ-13
Diodes Incorporated

MOSFET BVDSS: 41V 60V V-DFN5045-

  • FET Type: 4 N-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: 14.8A (Ta)
  • Rds On (Max) @ Id, Vgs: 22 mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 864pF @ 30V
  • Power - Max: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 12-VDFN Exposed Pad
  • Supplier Device Package: V-DFN5045-12
pacchetto: 12-VDFN Exposed Pad
Azione5.744
Standard
-
14.8A (Ta)
22 mOhm @ 10A, 10V
3V @ 250µA
8.4nC @ 4.5V
864pF @ 30V
-
-55°C ~ 150°C (TJ)
Surface Mount
12-VDFN Exposed Pad
V-DFN5045-12
DMC2400UV-13
Diodes Incorporated

MOSFET N/P-CH 20V SOT563

  • FET Type: N and P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.03A, 700mA
  • Rds On (Max) @ Id, Vgs: 480 mOhm @ 200mA, 5V
  • Vgs(th) (Max) @ Id: 900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 37.1pF @ 10V
  • Power - Max: 450mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
pacchetto: SOT-563, SOT-666
Azione2.896
Standard
20V
1.03A, 700mA
480 mOhm @ 200mA, 5V
900mV @ 250µA
0.5nC @ 4.5V
37.1pF @ 10V
450mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
NX138BKWF
Nexperia USA Inc.

NX138BKW/SOT323/SC-70

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione6.880
-
-
-
-
-
-
-
-
-
-
-
-
EPC2102ENGRT
EPC

MOSFET ARRAY 2N-CH 60V DIE

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 23A (Tj)
  • Rds On (Max) @ Id, Vgs: 4.4 mOhm @ 20A, 5V
  • Vgs(th) (Max) @ Id: 2.5V @ 7mA
  • Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 30V
  • Power - Max: -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
pacchetto: Die
Azione6.752
GaNFET (Gallium Nitride)
60V
23A (Tj)
4.4 mOhm @ 20A, 5V
2.5V @ 7mA
6.8nC @ 5V
830pF @ 30V
-
-40°C ~ 150°C (TJ)
Surface Mount
Die
Die
hot TSM9926DCS RLG
TSC America Inc.

MOSFET, DUAL, N-CHANNEL, TRENCH,

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
  • Rds On (Max) @ Id, Vgs: 30 mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 600mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 562pF @ 8V
  • Power - Max: 1.6W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione11.172
Standard
20V
6A (Tc)
30 mOhm @ 6A, 10V
600mV @ 250µA
7.1nC @ 4.5V
562pF @ 8V
1.6W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
ALD110800SCL
Advanced Linear Devices Inc.

MOSFET 4N-CH 10.6V 16SOIC

  • FET Type: 4 N-Channel, Matched Pair
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 10.6V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 500 Ohm @ 4V
  • Vgs(th) (Max) @ Id: 20mV @ 1µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
  • Power - Max: 500mW
  • Operating Temperature: 0°C ~ 70°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 16-SOIC
pacchetto: 16-SOIC (0.154", 3.90mm Width)
Azione3.856
Standard
10.6V
-
500 Ohm @ 4V
20mV @ 1µA
-
2.5pF @ 5V
500mW
0°C ~ 70°C (TJ)
Surface Mount
16-SOIC (0.154", 3.90mm Width)
16-SOIC
hot 2N7002DW
Fairchild/ON Semiconductor

MOSFET 2N-CH 60V 0.115A SC70-6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 115mA
  • Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 50mA, 5V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
  • Power - Max: 200mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-70-6
pacchetto: 6-TSSOP, SC-88, SOT-363
Azione2.247.348
Logic Level Gate
60V
115mA
7.5 Ohm @ 50mA, 5V
2V @ 250µA
-
50pF @ 25V
200mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SC-70-6
PMDPB30XN,115
Nexperia USA Inc.

MOSFET 2N-CH 20V 4A 6HUSON

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4A
  • Rds On (Max) @ Id, Vgs: 40 mOhm @ 3A, 4.5V
  • Vgs(th) (Max) @ Id: 900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 21.7nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 10V
  • Power - Max: 490mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: DFN2020-6
pacchetto: 6-UDFN Exposed Pad
Azione2.240
Logic Level Gate
20V
4A
40 mOhm @ 3A, 4.5V
900mV @ 250µA
21.7nC @ 4.5V
660pF @ 10V
490mW
-55°C ~ 150°C (TJ)
Surface Mount
6-UDFN Exposed Pad
DFN2020-6
hot IRF7503TRPBF
Infineon Technologies

MOSFET 2N-CH 30V 2.4A MICRO8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 2.4A
  • Rds On (Max) @ Id, Vgs: 135 mOhm @ 1.7A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 25V
  • Power - Max: 1.25W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
  • Supplier Device Package: Micro8?
pacchetto: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Azione91.512
Logic Level Gate
30V
2.4A
135 mOhm @ 1.7A, 10V
1V @ 250µA
12nC @ 10V
210pF @ 25V
1.25W
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Micro8?
hot FDMS9620S
Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 7.5A/10A PWR56

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 7.5A, 10A
  • Rds On (Max) @ Id, Vgs: 21.5 mOhm @ 7.5A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 15V
  • Power - Max: 1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerWDFN
  • Supplier Device Package: Power56
pacchetto: 8-PowerWDFN
Azione661.428
Logic Level Gate
30V
7.5A, 10A
21.5 mOhm @ 7.5A, 10V
3V @ 250µA
14nC @ 10V
665pF @ 15V
1W
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerWDFN
Power56
DMC4015SSD-13
Diodes Incorporated

MOSFET N/P-CH 40V 8.6A/6.5A 8-SO

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 8.6A, 6.2A
  • Rds On (Max) @ Id, Vgs: 15 mOhm @ 3A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1810pF @ 20V
  • Power - Max: 1.2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione6.336
Logic Level Gate
40V
8.6A, 6.2A
15 mOhm @ 3A, 10V
3V @ 250µA
40nC @ 10V
1810pF @ 20V
1.2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
BSL316CH6327XTSA1
Infineon Technologies

MOSFET N/P-CH 30V 1.4A/1.5A TSOP

  • FET Type: N and P-Channel Complementary
  • FET Feature: Logic Level Gate, 4.5V Drive
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 1.4A, 1.5A
  • Rds On (Max) @ Id, Vgs: 160 mOhm @ 1.4A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 3.7µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 282pF @ 15V
  • Power - Max: 500mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: PG-TSOP6-6
pacchetto: SOT-23-6 Thin, TSOT-23-6
Azione68.490
Logic Level Gate, 4.5V Drive
30V
1.4A, 1.5A
160 mOhm @ 1.4A, 10V
2V @ 3.7µA
0.6nC @ 5V
282pF @ 15V
500mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
PG-TSOP6-6
hot IRF9952TRPBF
Infineon Technologies

MOSFET N/P-CH 30V 8-SOIC

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A, 2.3A
  • Rds On (Max) @ Id, Vgs: 100 mOhm @ 2.2A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione963.480
Logic Level Gate
30V
3.5A, 2.3A
100 mOhm @ 2.2A, 10V
1V @ 250µA
14nC @ 10V
190pF @ 15V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot SH8M24TB1
Rohm Semiconductor

MOSFET N/P-CH 45V 4.5A/3.5A SOP8

  • FET Type: N and P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 45V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A, 3.5A
  • Rds On (Max) @ Id, Vgs: 46 mOhm @ 4.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V
  • Power - Max: 2W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione44.544
Standard
45V
4.5A, 3.5A
46 mOhm @ 4.5A, 10V
2.5V @ 1mA
9.6nC @ 5V
550pF @ 10V
2W
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
hot SI6954ADQ-T1-E3
Vishay Siliconix

MOSFET 2N-CH 30V 3.1A 8TSSOP

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.1A
  • Rds On (Max) @ Id, Vgs: 53 mOhm @ 3.4A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 830mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
pacchetto: 8-TSSOP (0.173", 4.40mm Width)
Azione136.824
Logic Level Gate
30V
3.1A
53 mOhm @ 3.4A, 10V
1V @ 250µA (Min)
16nC @ 10V
-
830mW
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
FC8V22040L
Panasonic Electronic Components

MOSFET 2N-CH 24V 8A WMINI8-F1

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 24V
  • Current - Continuous Drain (Id) @ 25°C: 8A
  • Rds On (Max) @ Id, Vgs: 15 mOhm @ 4A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1W
  • Operating Temperature: -40°C ~ 85°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: WMini8-F1
pacchetto: 8-SMD, Flat Lead
Azione28.740
Logic Level Gate
24V
8A
15 mOhm @ 4A, 4.5V
1.5V @ 1mA
-
-
1W
-40°C ~ 85°C (TJ)
Surface Mount
8-SMD, Flat Lead
WMini8-F1
hot DMP2004VK-7
Diodes Incorporated

MOSFET 2P-CH 20V 0.53A SOT-563

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 530mA
  • Rds On (Max) @ Id, Vgs: 900 mOhm @ 430mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 16V
  • Power - Max: 400mW
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
pacchetto: SOT-563, SOT-666
Azione733.524
Logic Level Gate
20V
530mA
900 mOhm @ 430mA, 4.5V
1V @ 250µA
-
175pF @ 16V
400mW
-65°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
hot CSD86330Q3D
Texas Instruments

MOSFET 2N-CH 25V 20A 8SON

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 20A
  • Rds On (Max) @ Id, Vgs: 9.6 mOhm @ 14A, 8V
  • Vgs(th) (Max) @ Id: 2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 12.5V
  • Power - Max: 6W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerLDFN
  • Supplier Device Package: 8-LSON (5x6)
pacchetto: 8-PowerLDFN
Azione666.252
Logic Level Gate
25V
20A
9.6 mOhm @ 14A, 8V
2.1V @ 250µA
6.2nC @ 4.5V
920pF @ 12.5V
6W
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerLDFN
8-LSON (5x6)