Pagina 6 - Transistor - FET, MOSFET - Array | Dispositivi a semiconduttore discreti | Heisener Electronics
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Transistor - FET, MOSFET - Array

Record 5.684
Pagina  6/203
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IRF7750TRPBF
Infineon Technologies

MOSFET 2P-CH 20V 4.7A 8TSSOP

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.7A
  • Rds On (Max) @ Id, Vgs: 30 mOhm @ 4.7A, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 39nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 15V
  • Power - Max: 1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
pacchetto: 8-TSSOP (0.173", 4.40mm Width)
Azione6.576
Logic Level Gate
20V
4.7A
30 mOhm @ 4.7A, 4.5V
1.2V @ 250µA
39nC @ 5V
1700pF @ 15V
1W
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
FDC6301N_G
Fairchild/ON Semiconductor

MOSFET 2N-CH SSOT6

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione2.464
-
-
-
-
-
-
-
-
-
-
-
-
ECH8659-TL-HX
ON Semiconductor

MOSFET 2N-CH 30V 7A ECH8

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: 8-ECH
pacchetto: 8-SMD, Flat Lead
Azione4.992
-
-
-
-
-
-
-
-
-
Surface Mount
8-SMD, Flat Lead
8-ECH
hot NDS8934
Fairchild/ON Semiconductor

MOSFET 2P-CH 20V 3.8A 8-SOIC

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.8A
  • Rds On (Max) @ Id, Vgs: 70 mOhm @ 3.8A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1120pF @ 10V
  • Power - Max: 900mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione182.040
Logic Level Gate
20V
3.8A
70 mOhm @ 3.8A, 4.5V
1V @ 250µA
30nC @ 4.5V
1120pF @ 10V
900mW
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot FDR8508P
Fairchild/ON Semiconductor

MOSFET 2P-CH 30V 3A SSOT-8

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3A
  • Rds On (Max) @ Id, Vgs: 52 mOhm @ 3A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 15V
  • Power - Max: 800mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Gull Wing
  • Supplier Device Package: SuperSOT?-8
pacchetto: 8-SMD, Gull Wing
Azione41.280
Logic Level Gate
30V
3A
52 mOhm @ 3A, 10V
3V @ 250µA
12nC @ 5V
750pF @ 15V
800mW
-55°C ~ 150°C (TJ)
Surface Mount
8-SMD, Gull Wing
SuperSOT?-8
APTM50HM65FTG
Microsemi Corporation

MOSFET 4N-CH 500V 51A SP4

  • FET Type: 4 N-Channel (H-Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 51A
  • Rds On (Max) @ Id, Vgs: 78 mOhm @ 25.5A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
  • Power - Max: 390W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP4
  • Supplier Device Package: SP4
pacchetto: SP4
Azione7.728
Standard
500V
51A
78 mOhm @ 25.5A, 10V
5V @ 2.5mA
140nC @ 10V
7000pF @ 25V
390W
-40°C ~ 150°C (TJ)
Chassis Mount
SP4
SP4
FW4604-TL-2W
ON Semiconductor

MOSFET N/P-CH 30V 8SOIC

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate, 4.5V Drive
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6A, 4.5A
  • Rds On (Max) @ Id, Vgs: 39 mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 9.1nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 10V
  • Power - Max: 1.8W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione7.696
Logic Level Gate, 4.5V Drive
30V
6A, 4.5A
39 mOhm @ 6A, 10V
-
9.1nC @ 10V
490pF @ 10V
1.8W
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
PMDPB55XP,115
Nexperia USA Inc.

MOSFET 2P-CH 20V 3.4A 6HUSON

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.4A
  • Rds On (Max) @ Id, Vgs: 70 mOhm @ 3.4A, 4.5V
  • Vgs(th) (Max) @ Id: 900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 785pF @ 10V
  • Power - Max: 490mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: DFN2020-6
pacchetto: 6-UDFN Exposed Pad
Azione5.472
Logic Level Gate
20V
3.4A
70 mOhm @ 3.4A, 4.5V
900mV @ 250µA
25nC @ 5V
785pF @ 10V
490mW
-55°C ~ 150°C (TJ)
Surface Mount
6-UDFN Exposed Pad
DFN2020-6
DMT3020LFDB-13
Diodes Incorporated

MOSFET 2N-CHA 30V 7.7A DFN2020

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta)
  • Rds On (Max) @ Id, Vgs: 20 mOhm @ 9A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 393pF @ 15V
  • Power - Max: 700mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: U-DFN2020-6 (Type B)
pacchetto: 6-UDFN Exposed Pad
Azione5.392
Standard
30V
7.7A (Ta)
20 mOhm @ 9A, 10V
3V @ 250µA
7nC @ 10V
393pF @ 15V
700mW
-55°C ~ 150°C (TJ)
Surface Mount
6-UDFN Exposed Pad
U-DFN2020-6 (Type B)
SQJQ906EL-T1_GE3
Vishay Siliconix

MOSFET ARRAY 2N-CH 40V PWRPAK8X8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
  • Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3238pF @ 20V
  • Power - Max: 187W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? 8 x 8 Dual
  • Supplier Device Package: PowerPAK? 8 x 8 Dual
pacchetto: PowerPAK? 8 x 8 Dual
Azione3.296
Standard
40V
160A (Tc)
4.3 mOhm @ 5A, 10V
2.5V @ 250µA
45nC @ 10V
3238pF @ 20V
187W
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK? 8 x 8 Dual
PowerPAK? 8 x 8 Dual
hot ECH8651R-TL-H
ON Semiconductor

MOSFET 2N-CH 24V 10A ECH8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 24V
  • Current - Continuous Drain (Id) @ 25°C: 10A
  • Rds On (Max) @ Id, Vgs: 14 mOhm @ 5A, 4.5V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.5W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: 8-ECH
pacchetto: 8-SMD, Flat Lead
Azione8.664
Logic Level Gate
24V
10A
14 mOhm @ 5A, 4.5V
-
24nC @ 10V
-
1.5W
150°C (TJ)
Surface Mount
8-SMD, Flat Lead
8-ECH
HP8K22TB
Rohm Semiconductor

30V NCH+NCH MID POWER MOSFET

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 27A, 57A
  • Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 16.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1080pF @ 15V
  • Power - Max: 25W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-HSOP
pacchetto: 8-PowerTDFN
Azione21.840
-
30V
27A, 57A
4.6 mOhm @ 20A, 10V
2.5V @ 1mA
16.8nC @ 10V
1080pF @ 15V
25W
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerTDFN
8-HSOP
hot US6M2TR
Rohm Semiconductor

MOSFET N/P-CH 30V/20V TUMT6

  • FET Type: N and P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V, 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.5A, 1A
  • Rds On (Max) @ Id, Vgs: 240 mOhm @ 1.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 10V
  • Power - Max: 1W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, Flat Leads
  • Supplier Device Package: TUMT6
pacchetto: 6-SMD, Flat Leads
Azione1.609.164
Standard
30V, 20V
1.5A, 1A
240 mOhm @ 1.5A, 4.5V
1.5V @ 1mA
2.2nC @ 4.5V
80pF @ 10V
1W
150°C (TJ)
Surface Mount
6-SMD, Flat Leads
TUMT6
SH8K25GZ0TB1
Rohm Semiconductor

MOSFET 2N-CH 40V 5.2A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
  • Rds On (Max) @ Id, Vgs: 85mOhm @ 5.2A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 10V
  • Power - Max: 1.4W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
pacchetto: -
Azione52.380
-
40V
5.2A (Ta)
85mOhm @ 5.2A, 10V
2.5V @ 1mA
1.7nC @ 5V
100pF @ 10V
1.4W (Ta)
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
EAB450M12XM3
Wolfspeed, Inc.

SIC 2N-CH 1200V 450A

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 450A (Tc)
  • Rds On (Max) @ Id, Vgs: 3.7mOhm @ 450A, 15V
  • Vgs(th) (Max) @ Id: 3.6V @ 132mA
  • Gate Charge (Qg) (Max) @ Vgs: 1330nC @ 15V
  • Input Capacitance (Ciss) (Max) @ Vds: 38000pF @ 800V
  • Power - Max: -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
pacchetto: -
Azione12
-
1200V (1.2kV)
450A (Tc)
3.7mOhm @ 450A, 15V
3.6V @ 132mA
1330nC @ 15V
38000pF @ 800V
-
-40°C ~ 175°C (TJ)
Chassis Mount
Module
-
FW256-TL-E
Sanyo

MOSFET N-CH

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
US6M2GTR
Rohm Semiconductor

MOSFET N/P-CH 30V/20V 1.5A TUMT6

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V, 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.5A, 1A
  • Rds On (Max) @ Id, Vgs: 240mOhm @ 1.5A, 4.5V, 390mOhm @ 1A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 1mA, 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V, 2.1nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 10V, 150pF @ 10V
  • Power - Max: 1W
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, Flat Leads
  • Supplier Device Package: TUMT6
pacchetto: -
Request a Quote
-
30V, 20V
1.5A, 1A
240mOhm @ 1.5A, 4.5V, 390mOhm @ 1A, 4.5V
1.5V @ 1mA, 2V @ 1mA
2.2nC @ 4.5V, 2.1nC @ 4.5V
80pF @ 10V, 150pF @ 10V
1W
150°C
Surface Mount
6-SMD, Flat Leads
TUMT6
DMNH6021SPDWQ-13
Diodes Incorporated

MOSFET 2N-CH 60V 8.2A PWRDI50

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), 32A(Tc)
  • Rds On (Max) @ Id, Vgs: 25mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20.1nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1143pF @ 25V
  • Power - Max: 1.5W (Ta)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: PowerDI5060-8 (Type R)
pacchetto: -
Request a Quote
-
60V
8.2A (Ta), 32A(Tc)
25mOhm @ 15A, 10V
3V @ 250µA
20.1nC @ 10V
1143pF @ 25V
1.5W (Ta)
-55°C ~ 175°C (TJ)
Surface Mount, Wettable Flank
8-PowerTDFN
PowerDI5060-8 (Type R)
DMN52D0UDW-13
Diodes Incorporated

MOSFET BVDSS: 31V~40V SOT363 T&R

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
  • Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 42.3pF @ 25V
  • Power - Max: 300mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
pacchetto: -
Request a Quote
-
50V
350mA (Ta)
2Ohm @ 50mA, 5V
1V @ 250µA
1.5nC @ 10V
42.3pF @ 25V
300mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
MCH6646-TL-E
onsemi

NCH+NCH 1.8 DRIVE SERIES

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
MCB30P1200LB-TRR
IXYS

SIC 2N-CH 1200V 9SMPD

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 9-PowerSMD
  • Supplier Device Package: 9-SMPD-B
pacchetto: -
Request a Quote
-
1200V (1.2kV)
-
-
-
-
-
-
-
Surface Mount
9-PowerSMD
9-SMPD-B
BSO612CVGXUMA1
Infineon Technologies

MOSFET N/P-CH 8-SOIC

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
DMP68D1LV-7
Diodes Incorporated

BSS FAMILY SOT563 T&R 3K

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 238mA (Ta)
  • Rds On (Max) @ Id, Vgs: 8Ohm @ 100mA, 5V
  • Vgs(th) (Max) @ Id: 2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 30V
  • Power - Max: 500mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
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60V
238mA (Ta)
8Ohm @ 100mA, 5V
2.1V @ 250µA
0.6nC @ 5V
42pF @ 30V
500mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
AONX38168
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 25V 25A/62A 8DFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 62A (Tc), 50A (Ta), 85A (Tc)
  • Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V, 0.8mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 1.9V @ 250µA, 1.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V, 85nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 12.5V, 4520pF @ 12.5V
  • Power - Max: 3.1W (Ta), 20W (Tc), 3.2W (Ta), 69W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-VDFN Exposed Pad
  • Supplier Device Package: 8-DFN (5x6)
pacchetto: -
Azione3.648
-
25V
25A (Ta), 62A (Tc), 50A (Ta), 85A (Tc)
3.3mOhm @ 20A, 10V, 0.8mOhm @ 20A, 10V
1.9V @ 250µA, 1.8V @ 250µA
24nC @ 10V, 85nC @ 10V
1150pF @ 12.5V, 4520pF @ 12.5V
3.1W (Ta), 20W (Tc), 3.2W (Ta), 69W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-VDFN Exposed Pad
8-DFN (5x6)
DMC2400UVQ-7
Diodes Incorporated

MOSFET BVDSS: 8V~24V SOT563 T&R

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.03A (Ta), 700mA (Ta)
  • Rds On (Max) @ Id, Vgs: 480mOhm @ 200mA, 5V, 970mOhm @ 100mA, 5V
  • Vgs(th) (Max) @ Id: 900mV @ 250µA, 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 37.1pF @ 10V, 46.1pF @ 10V
  • Power - Max: 450mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
pacchetto: -
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20V
1.03A (Ta), 700mA (Ta)
480mOhm @ 200mA, 5V, 970mOhm @ 100mA, 5V
900mV @ 250µA, 1V @ 250µA
0.5nC @ 4.5V
37.1pF @ 10V, 46.1pF @ 10V
450mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
NDS9955
onsemi

MOSFET 2N-CH 50V 3A 8SOIC

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 3A
  • Rds On (Max) @ Id, Vgs: 130mOhm @ 3A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 345pF @ 25V
  • Power - Max: 900mW
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
pacchetto: -
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Logic Level Gate
50V
3A
130mOhm @ 3A, 10V
3V @ 250µA
30nC @ 10V
345pF @ 25V
900mW
-
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
DMN2053UFDBQ-13
Diodes Incorporated

MOSFET 2N-CH 20V 4.6A 6UDFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
  • Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 369pF @ 10V
  • Power - Max: 820mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: U-DFN2020-6 (Type B)
pacchetto: -
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20V
4.6A (Ta)
35mOhm @ 5A, 4.5V
1V @ 250µA
7.7nC @ 10V
369pF @ 10V
820mW
-55°C ~ 150°C (TJ)
Surface Mount
6-UDFN Exposed Pad
U-DFN2020-6 (Type B)
NXH004P120M3F2PTHG
onsemi

ELITESIC, 3 MOHM SIC M3S MOSFET,

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 284A (Tc)
  • Rds On (Max) @ Id, Vgs: 5.5mOhm @ 200A, 18V
  • Vgs(th) (Max) @ Id: 4.4V @ 120mA
  • Gate Charge (Qg) (Max) @ Vgs: 876nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 16410pF @ 800V
  • Power - Max: 785W (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: 36-PIM (56.7x62.8)
pacchetto: -
Azione90
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1200V (1.2kV)
284A (Tc)
5.5mOhm @ 200A, 18V
4.4V @ 120mA
876nC @ 20V
16410pF @ 800V
785W (Tc)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
36-PIM (56.7x62.8)