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Transistor - FET, MOSFET - Array

Record 5.684
Pagina  99/190
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
2N7002BKS/ZLX
Nexperia USA Inc.

MOSFET SS SC-88

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione3.392
-
-
-
-
-
-
-
-
-
-
-
-
AOC4810
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 8-DFN

  • FET Type: 2 N-Channel (Dual) Common Drain
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1130pF @ 15V
  • Power - Max: 900mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-XFLGA Exposed Pad
  • Supplier Device Package: 8-AlphaDFN (3.2x2)
pacchetto: 8-XFLGA Exposed Pad
Azione4.144
Logic Level Gate
-
-
-
-
20nC @ 10V
1130pF @ 15V
900mW
-55°C ~ 150°C (TJ)
Surface Mount
8-XFLGA Exposed Pad
8-AlphaDFN (3.2x2)
hot SI4542DY-T1-E3
Vishay Siliconix

MOSFET N/P-CH 30V 8-SOIC

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 25 mOhm @ 6.9A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione662.292
Logic Level Gate
30V
-
25 mOhm @ 6.9A, 10V
1V @ 250µA (Min)
50nC @ 10V
-
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
SI4226DY-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 25V 8A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 8A
  • Rds On (Max) @ Id, Vgs: 19.5 mOhm @ 7A, 4.5V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1255pF @ 15V
  • Power - Max: 3.2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione2.672
Standard
25V
8A
19.5 mOhm @ 7A, 4.5V
2V @ 250µA
36nC @ 10V
1255pF @ 15V
3.2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
APTML1002U60R020T3AG
Microsemi Corporation

MOSFET 2N-CH 1000V 20A SP3

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 1000V (1kV)
  • Current - Continuous Drain (Id) @ 25°C: 20A
  • Rds On (Max) @ Id, Vgs: 720 mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 25V
  • Power - Max: 520W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP3
  • Supplier Device Package: SP3
pacchetto: SP3
Azione7.040
Standard
1000V (1kV)
20A
720 mOhm @ 10A, 10V
4V @ 2.5mA
-
6000pF @ 25V
520W
-40°C ~ 150°C (TJ)
Chassis Mount
SP3
SP3
APTM100A13DG
Microsemi Corporation

MOSFET 2N-CH 1000V 65A SP6

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 1000V (1kV)
  • Current - Continuous Drain (Id) @ 25°C: 65A
  • Rds On (Max) @ Id, Vgs: 156 mOhm @ 32.5A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 6mA
  • Gate Charge (Qg) (Max) @ Vgs: 562nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 15200pF @ 25V
  • Power - Max: 1250W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP6
  • Supplier Device Package: SP6
pacchetto: SP6
Azione3.072
Standard
1000V (1kV)
65A
156 mOhm @ 32.5A, 10V
5V @ 6mA
562nC @ 10V
15200pF @ 25V
1250W
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
SP6
hot SP8K31TB1
Rohm Semiconductor

MOSFET 2N-CH 60V 3.5A 8SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A
  • Rds On (Max) @ Id, Vgs: 120 mOhm @ 3.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V
  • Power - Max: 2W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione5.872
Logic Level Gate
60V
3.5A
120 mOhm @ 3.5A, 10V
2.5V @ 1mA
5.2nC @ 5V
250pF @ 10V
2W
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
hot NTMFD4C20NT1G
ON Semiconductor

MOSFET 2N-CH 30V SO8FL

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 9.1A, 13.7A
  • Rds On (Max) @ Id, Vgs: 7.3 mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 970pF @ 15V
  • Power - Max: 1.09W, 1.15W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
pacchetto: 8-PowerTDFN
Azione32.988
Standard
30V
9.1A, 13.7A
7.3 mOhm @ 10A, 10V
2.1V @ 250µA
9.3nC @ 4.5V
970pF @ 15V
1.09W, 1.15W
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerTDFN
8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
DMC6040SSDQ-13
Diodes Incorporated

MOSFET N/P-CH 60V 5.1A 8SO

  • FET Type: N and P-Channel Complementary
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)
  • Rds On (Max) @ Id, Vgs: 40 mOhm @ 8A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20.8nC @ 30V
  • Input Capacitance (Ciss) (Max) @ Vds: 1130pF @ 15V
  • Power - Max: 1.24W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione6.064
Standard
60V
5.1A (Ta)
40 mOhm @ 8A, 10V
3V @ 250µA
20.8nC @ 30V
1130pF @ 15V
1.24W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot DMC1229UFDB-7
Diodes Incorporated

MOSFET N/P-CH 12V U-DFN2020-6

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 5.6A, 3.8A
  • Rds On (Max) @ Id, Vgs: 29 mOhm @ 5A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 19.6nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 914pF @ 6V
  • Power - Max: 1.4W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: U-DFN2020-6 (Type B)
pacchetto: 6-UDFN Exposed Pad
Azione3.760
Logic Level Gate
12V
5.6A, 3.8A
29 mOhm @ 5A, 4.5V
1V @ 250µA
19.6nC @ 8V
914pF @ 6V
1.4W
-55°C ~ 150°C (TJ)
Surface Mount
6-UDFN Exposed Pad
U-DFN2020-6 (Type B)
SSM6P35FE,LM
Toshiba Semiconductor and Storage

MOSFET 2NCH 20V 100MA ES6

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 100mA
  • Rds On (Max) @ Id, Vgs: 8 Ohm @ 50mA, 4V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 12.2pF @ 3V
  • Power - Max: 150mW
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6
pacchetto: SOT-563, SOT-666
Azione5.536
Standard
20V
100mA
8 Ohm @ 50mA, 4V
1V @ 1mA
-
12.2pF @ 3V
150mW
150°C
Surface Mount
SOT-563, SOT-666
ES6
NX3020NAKVYL
Nexperia USA Inc.

MOSFET 2N-CH 30V 0.2A SOT666

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 200mA
  • Rds On (Max) @ Id, Vgs: 4.5 Ohm @ 100mA, 10V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.44nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 10V
  • Power - Max: 260mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-666
pacchetto: SOT-563, SOT-666
Azione7.152
Standard
30V
200mA
4.5 Ohm @ 100mA, 10V
1.5V @ 250µA
0.44nC @ 4.5V
20pF @ 10V
260mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-666
hot SLA5212
Sanken

MOSFET 3N/3P-CH 35V 8A 15-SIP

  • FET Type: 3 N and 3 P-Channel (3-Phase Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 35V
  • Current - Continuous Drain (Id) @ 25°C: 8A
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: 15-SIP, Exposed Tab, Formed Leads
  • Supplier Device Package: 15-SIP
pacchetto: 15-SIP, Exposed Tab, Formed Leads
Azione5.520
Standard
35V
8A
-
-
-
-
-
-
Through Hole
15-SIP, Exposed Tab, Formed Leads
15-SIP
ALD1107PBL
Advanced Linear Devices Inc.

MOSFET 4P-CH 10.6V 14DIP

  • FET Type: 4 P-Channel, Matched Pair
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 10.6V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 1800 Ohm @ 5V
  • Vgs(th) (Max) @ Id: 1V @ 1µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 5V
  • Power - Max: 500mW
  • Operating Temperature: 0°C ~ 70°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 14-DIP (0.300", 7.62mm)
  • Supplier Device Package: 14-PDIP
pacchetto: 14-DIP (0.300", 7.62mm)
Azione12.444
Standard
10.6V
-
1800 Ohm @ 5V
1V @ 1µA
-
3pF @ 5V
500mW
0°C ~ 70°C (TJ)
Through Hole
14-DIP (0.300", 7.62mm)
14-PDIP
BSC0911NDATMA1
Infineon Technologies

MOSFET 2N-CH 25V 18A/30A TISON-8

  • FET Type: 2 N-Channel (Dual) Asymmetrical
  • FET Feature: Logic Level Gate, 4.5V Drive
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 18A, 30A
  • Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 12V
  • Power - Max: 1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: PG-TISON-8
pacchetto: 8-PowerTDFN
Azione3.488
Logic Level Gate, 4.5V Drive
25V
18A, 30A
3.2 mOhm @ 20A, 10V
2V @ 250µA
12nC @ 4.5V
1600pF @ 12V
1W
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerTDFN
PG-TISON-8
hot SI7224DN-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 30V 6A PPAK 1212-8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6A
  • Rds On (Max) @ Id, Vgs: 35 mOhm @ 6.5A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 15V
  • Power - Max: 17.8W, 23W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? 1212-8 Dual
  • Supplier Device Package: PowerPAK? 1212-8 Dual
pacchetto: PowerPAK? 1212-8 Dual
Azione250.212
Logic Level Gate
30V
6A
35 mOhm @ 6.5A, 10V
2.2V @ 250µA
14.5nC @ 10V
570pF @ 15V
17.8W, 23W
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? 1212-8 Dual
PowerPAK? 1212-8 Dual
hot DMP210DUDJ-7
Diodes Incorporated

MOSFET 2P-CH 20V 0.2A SOT-963

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 200mA
  • Rds On (Max) @ Id, Vgs: 5.5 Ohm @ 100mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.15V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 27.44pF @ 15V
  • Power - Max: 330mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-963
  • Supplier Device Package: SOT-963
pacchetto: SOT-963
Azione44.640
Logic Level Gate
20V
200mA
5.5 Ohm @ 100mA, 4.5V
1.15V @ 250µA
-
27.44pF @ 15V
330mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-963
SOT-963
SQJB90EP-T1_GE3
Vishay Siliconix

MOSFET ARRAY 2N-CH 80V SO8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Rds On (Max) @ Id, Vgs: 21.5 mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V
  • Power - Max: 48W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? SO-8 Dual
  • Supplier Device Package: PowerPAK? SO-8 Dual
pacchetto: PowerPAK? SO-8 Dual
Azione26.052
Standard
80V
30A (Tc)
21.5 mOhm @ 10A, 10V
3.5V @ 250µA
25nC @ 10V
1200pF @ 25V
48W
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK? SO-8 Dual
PowerPAK? SO-8 Dual
PMCXB900UELZ
Nexperia USA Inc.

20 V, COMPLEMENTARY N/P-CHANNEL

  • FET Type: N and P-Channel Complementary
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 600mA
  • Rds On (Max) @ Id, Vgs: 620 mOhm @ 600mA, 4.5V
  • Vgs(th) (Max) @ Id: 950mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 21.3pF @ 10V
  • Power - Max: 380mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-XFDFN Exposed Pad
  • Supplier Device Package: DFN1010B-6
pacchetto: 6-XFDFN Exposed Pad
Azione48.384
Standard
20V
600mA
620 mOhm @ 600mA, 4.5V
950mV @ 250µA
0.7nC @ 4.5V
21.3pF @ 10V
380mW
-55°C ~ 150°C (TJ)
Surface Mount
6-XFDFN Exposed Pad
DFN1010B-6
BUK9K12-60E-1X
Nexperia USA Inc.

MOSFET 60V 35A LFPAK56D

  • FET Type: -
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
  • Rds On (Max) @ Id, Vgs: 10.7mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 24.5nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 3470pF @ 25V
  • Power - Max: 68W (Ta)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-1205, 8-LFPAK56
  • Supplier Device Package: LFPAK56D
pacchetto: -
Request a Quote
Logic Level Gate
60V
35A (Ta)
10.7mOhm @ 15A, 10V
2.1V @ 1mA
24.5nC @ 5V
3470pF @ 25V
68W (Ta)
-55°C ~ 175°C (TJ)
Surface Mount
SOT-1205, 8-LFPAK56
LFPAK56D
SH8MB4TB1
Rohm Semiconductor

40V 4.5A/5.5A, DUAL NCH+PCH, SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 5.5A (Ta)
  • Rds On (Max) @ Id, Vgs: 55mOhm @ 4.5A, 10V, 46mOhm @ 5.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 10V, 17.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 20V, 920pF @ 20V
  • Power - Max: 2W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
pacchetto: -
Request a Quote
-
40V
4.5A (Ta), 5.5A (Ta)
55mOhm @ 4.5A, 10V, 46mOhm @ 5.5A, 10V
2.5V @ 1mA
3.5nC @ 10V, 17.2nC @ 10V
150pF @ 20V, 920pF @ 20V
2W (Ta)
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
MSCSM120AM042CT6AG
Microchip Technology

SIC 2N-CH 1200V 495A SP6C

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 495A (Tc)
  • Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 20V
  • Vgs(th) (Max) @ Id: 2.8V @ 6mA
  • Gate Charge (Qg) (Max) @ Vgs: 1392nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 18.1pF @ 1000V
  • Power - Max: 2.031kW (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: SP6C
pacchetto: -
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1200V (1.2kV)
495A (Tc)
5.2mOhm @ 240A, 20V
2.8V @ 6mA
1392nC @ 20V
18.1pF @ 1000V
2.031kW (Tc)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
SP6C
MSCSM120HM16TBL3NG
Microchip Technology

SIC 6N-CH 1200V 150A

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 150A
  • Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V
  • Vgs(th) (Max) @ Id: 2.8V @ 6mA
  • Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V
  • Power - Max: 560W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
pacchetto: -
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1200V (1.2kV)
150A
16mOhm @ 80A, 20V
2.8V @ 6mA
464nC @ 20V
6040pF @ 1000V
560W
-55°C ~ 175°C (TJ)
Chassis Mount
Module
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TSM6968DCA
Taiwan Semiconductor Corporation

MOSFET 2N-CH 20V 6.5A 8TSSOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
  • Rds On (Max) @ Id, Vgs: 22mOhm @ 6A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 10V
  • Power - Max: 1.04W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
pacchetto: -
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20V
6.5A (Ta)
22mOhm @ 6A, 4.5V
1V @ 250µA
20nC @ 4.5V
950pF @ 10V
1.04W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
UPA1763G-E1-AT
Renesas Electronics Corporation

MOSFET 2N-CH 60V 4.5A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A
  • Rds On (Max) @ Id, Vgs: 57mOhm @ 2.3A, 4.5V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 10V
  • Power - Max: 2W
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.173", 4.40mm Width)
  • Supplier Device Package: 8-PSOP
pacchetto: -
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Logic Level Gate
60V
4.5A
57mOhm @ 2.3A, 4.5V
2.5V @ 1mA
20nC @ 10V
870pF @ 10V
2W
-
Surface Mount
8-SOIC (0.173", 4.40mm Width)
8-PSOP
RQM2201DNS-P0
Renesas

MOSFET 2N-CH 60V 2A 6HWSON

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Rds On (Max) @ Id, Vgs: 225mOhm @ 1A, 4.5V
  • Vgs(th) (Max) @ Id: 1.4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 2.4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 10V
  • Power - Max: 1.5W (Ta)
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 6-WDFN Exposed Pad
  • Supplier Device Package: 6-HWSON (3x3)
pacchetto: -
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60V
2A (Ta)
225mOhm @ 1A, 4.5V
1.4V @ 1mA
2.4nC @ 4.5V
200pF @ 10V
1.5W (Ta)
150°C
Surface Mount
6-WDFN Exposed Pad
6-HWSON (3x3)
SQJ262EP-T1_GE3
Vishay Siliconix

MOSFET 2N-CH 60V 15A PPAK SO8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Tc), 40A (Tc)
  • Rds On (Max) @ Id, Vgs: 35.5mOhm @ 2A, 10V, 15.5mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V, 23nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 25V, 1260pF @ 25V
  • Power - Max: 27W (Tc), 48W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK® SO-8 Dual
  • Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric
pacchetto: -
Azione53.820
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60V
15A (Tc), 40A (Tc)
35.5mOhm @ 2A, 10V, 15.5mOhm @ 5A, 10V
2.5V @ 250µA
10nC @ 10V, 23nC @ 10V
550pF @ 25V, 1260pF @ 25V
27W (Tc), 48W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® SO-8 Dual
PowerPAK® SO-8 Dual Asymmetric
FDMD8430
onsemi

MOSFET 2N-CH 30V 28A/95A 8PQFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 95A (Tc)
  • Rds On (Max) @ Id, Vgs: 2.12mOhm @ 28A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5035pF @ 15V
  • Power - Max: 2.1W (Ta), 29W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerWDFN
  • Supplier Device Package: 8-PQFN (3.3x5)
pacchetto: -
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30V
28A (Ta), 95A (Tc)
2.12mOhm @ 28A, 10V
3V @ 250µA
90nC @ 10V
5035pF @ 15V
2.1W (Ta), 29W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerWDFN
8-PQFN (3.3x5)
FF33MR12W1M1HB11BPSA1
Infineon Technologies

MOSFET

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione66
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PMDT290UNEYL
Nexperia USA Inc.

MOSFET 2N-CH 20V 0.8A SOT666

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
  • Rds On (Max) @ Id, Vgs: 380mOhm @ 500mA, 4.5V
  • Vgs(th) (Max) @ Id: 950mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.68nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 83pF @ 10V
  • Power - Max: 500mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-666
pacchetto: -
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20V
800mA (Ta)
380mOhm @ 500mA, 4.5V
950mV @ 250µA
0.68nC @ 4.5V
83pF @ 10V
500mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-666