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Transistor - FET, MOSFET - RF

Record 2.766
Pagina  5/93
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Frequency
Gain
Voltage - Test
Current Rating
Noise Figure
Current - Test
Power - Output
Voltage - Rated
Package / Case
Supplier Device Package
hot NE3513M04-T2B-A
CEL

FET RF 4V 12GHZ M04 4SMD

  • Transistor Type: N-Channel GaAs HJ-FET
  • Frequency: 12GHz
  • Gain: 13dB
  • Voltage - Test: 2V
  • Current Rating: 60mA
  • Noise Figure: 0.65dB
  • Current - Test: 10mA
  • Power - Output: 125mW
  • Voltage - Rated: 4V
  • Package / Case: 4-SMD, Flat Leads
  • Supplier Device Package: 4-Super Mini Mold
pacchetto: 4-SMD, Flat Leads
Azione1.413.840
12GHz
13dB
2V
60mA
0.65dB
10mA
125mW
4V
4-SMD, Flat Leads
4-Super Mini Mold
MAGX-001090-600L0S
M/A-Com Technology Solutions

TRANSISTOR RF 600W GAN

  • Transistor Type: HEMT
  • Frequency: 1.03GHz ~ 1.09GHz
  • Gain: 21.4dB
  • Voltage - Test: 50V
  • Current Rating: 80A
  • Noise Figure: -
  • Current - Test: 600mA
  • Power - Output: 550W
  • Voltage - Rated: 65V
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione6.576
1.03GHz ~ 1.09GHz
21.4dB
50V
80A
-
600mA
550W
65V
-
-
hot NE3509M04-T2-A
CEL

FET RF 4V 2GHZ SOT-343

  • Transistor Type: HFET
  • Frequency: 2GHz
  • Gain: 17.5dB
  • Voltage - Test: 2V
  • Current Rating: 60mA
  • Noise Figure: 0.4dB
  • Current - Test: 10mA
  • Power - Output: 11dBm
  • Voltage - Rated: 4V
  • Package / Case: SOT-343F
  • Supplier Device Package: M04
pacchetto: SOT-343F
Azione546.984
2GHz
17.5dB
2V
60mA
0.4dB
10mA
11dBm
4V
SOT-343F
M04
MRF8HP21130HR3
NXP

FET RF 2CH 65V 2.17GHZ NI780-4

  • Transistor Type: LDMOS (Dual)
  • Frequency: 2.17GHz
  • Gain: 14dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 360mA
  • Power - Output: 28W
  • Voltage - Rated: 65V
  • Package / Case: NI-780-4
  • Supplier Device Package: NI-780-4
pacchetto: NI-780-4
Azione5.264
2.17GHz
14dB
28V
-
-
360mA
28W
65V
NI-780-4
NI-780-4
BLL6G1214L-250,112
Ampleon USA Inc.

RF FET LDMOS 89V 15DB SOT502A

  • Transistor Type: LDMOS
  • Frequency: 1.2GHz ~ 1.4GHz
  • Gain: 15dB
  • Voltage - Test: 36V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 150mA
  • Power - Output: 250W
  • Voltage - Rated: 89V
  • Package / Case: SOT-502A
  • Supplier Device Package: LDMOST
pacchetto: SOT-502A
Azione6.896
1.2GHz ~ 1.4GHz
15dB
36V
-
-
150mA
250W
89V
SOT-502A
LDMOST
MRF8S19140HR3
NXP

FET RF 65V 1.96GHZ NI780H

  • Transistor Type: LDMOS
  • Frequency: 1.96GHz
  • Gain: 19.1dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.1A
  • Power - Output: 34W
  • Voltage - Rated: 65V
  • Package / Case: NI-780
  • Supplier Device Package: NI-780
pacchetto: NI-780
Azione7.952
1.96GHz
19.1dB
28V
-
-
1.1A
34W
65V
NI-780
NI-780
ON5453,518
NXP

MOSFET RF 20SOIC

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione4.928
-
-
-
-
-
-
-
-
-
-
BLF278/01,112
Ampleon USA Inc.

RF FET 2 NC 125V 22DB SOT262A1

  • Transistor Type: 2 N-Channel (Dual) Common Source
  • Frequency: 108MHz
  • Gain: 22dB
  • Voltage - Test: 50V
  • Current Rating: 18A
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 300W
  • Voltage - Rated: 125V
  • Package / Case: SOT-262A1
  • Supplier Device Package: CDFM4
pacchetto: SOT-262A1
Azione3.520
108MHz
22dB
50V
18A
-
100mA
300W
125V
SOT-262A1
CDFM4
hot MRFE6S9160HR3
NXP

FET RF 66V 880MHZ NI-780

  • Transistor Type: LDMOS
  • Frequency: 880MHz
  • Gain: 21dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.2A
  • Power - Output: 35W
  • Voltage - Rated: 66V
  • Package / Case: NI-780
  • Supplier Device Package: NI-780
pacchetto: NI-780
Azione7.368
880MHz
21dB
28V
-
-
1.2A
35W
66V
NI-780
NI-780
MRFE6S9130HR3
NXP

FET RF 66V 880MHZ NI-780

  • Transistor Type: LDMOS
  • Frequency: 880MHz
  • Gain: 19.2dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 950mA
  • Power - Output: 27W
  • Voltage - Rated: 66V
  • Package / Case: NI-780
  • Supplier Device Package: NI-780
pacchetto: NI-780
Azione3.312
880MHz
19.2dB
28V
-
-
950mA
27W
66V
NI-780
NI-780
MRF7S27130HSR5
NXP

FET RF 65V 2.7GHZ NI-780S

  • Transistor Type: LDMOS
  • Frequency: 2.7GHz
  • Gain: 16.5dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.5A
  • Power - Output: 23W
  • Voltage - Rated: 65V
  • Package / Case: NI-780S
  • Supplier Device Package: NI-780S
pacchetto: NI-780S
Azione7.152
2.7GHz
16.5dB
28V
-
-
1.5A
23W
65V
NI-780S
NI-780S
MRF6S18060NBR1
NXP

FET RF 68V 1.99GHZ TO272-4

  • Transistor Type: LDMOS
  • Frequency: 1.99GHz
  • Gain: 15dB
  • Voltage - Test: 26V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 600mA
  • Power - Output: 60W
  • Voltage - Rated: 68V
  • Package / Case: TO-272BB
  • Supplier Device Package: TO-272 WB-4
pacchetto: TO-272BB
Azione7.520
1.99GHz
15dB
26V
-
-
600mA
60W
68V
TO-272BB
TO-272 WB-4
PTFA211801EV5R0XTMA1
Infineon Technologies

RF MOSFET LDMOS 28V H-36260-2

  • Transistor Type: LDMOS
  • Frequency: 2.11GHz ~ 2.17GHz
  • Gain: 15.5dB
  • Voltage - Test: 28V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 1.2A
  • Power - Output: 180W
  • Voltage - Rated: 65V
  • Package / Case: 2-Flatpack, Fin Leads, Flanged
  • Supplier Device Package: H-36260-2
pacchetto: 2-Flatpack, Fin Leads, Flanged
Azione4.720
2.11GHz ~ 2.17GHz
15.5dB
28V
10µA
-
1.2A
180W
65V
2-Flatpack, Fin Leads, Flanged
H-36260-2
PTRA093302FCV1R0XTMA1
Infineon Technologies

IC RF FET LDMOS 330W H-37248-4

  • Transistor Type: LDMOS
  • Frequency: 768MHz
  • Gain: 17.25dB
  • Voltage - Test: 48V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 400mA
  • Power - Output: 79W
  • Voltage - Rated: 105V
  • Package / Case: H-37248-4
  • Supplier Device Package: H-37248-4
pacchetto: H-37248-4
Azione7.440
768MHz
17.25dB
48V
10µA
-
400mA
79W
105V
H-37248-4
H-37248-4
BLS9G3135L-400U
Ampleon USA Inc.

BLS9G3135L-400/SOT502/TRAY

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione2.576
-
-
-
-
-
-
-
-
-
-
CLF1G0035-200PU
Ampleon USA Inc.

RF FET 50V 11DB SOT1228A

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione3.488
-
-
-
-
-
-
-
-
-
-
A2T21H410-24SR6
NXP

IC TRANS RF LDMOS

  • Transistor Type: LDMOS (Dual)
  • Frequency: 2.17GHz
  • Gain: 15.6dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 600mA
  • Power - Output: 72W
  • Voltage - Rated: 65V
  • Package / Case: NI-1230-4LS2L
  • Supplier Device Package: NI-1230-4LS2L
pacchetto: NI-1230-4LS2L
Azione5.904
2.17GHz
15.6dB
28V
-
-
600mA
72W
65V
NI-1230-4LS2L
NI-1230-4LS2L
BLF2324M8LS200PJ
Ampleon USA Inc.

RF FET LDMOS 65V 17.2DB SOT539B

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 2.3GHz ~ 2.4GHz
  • Gain: 17.2dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.74A
  • Power - Output: 60W
  • Voltage - Rated: 65V
  • Package / Case: SOT539B
  • Supplier Device Package: SOT539B
pacchetto: SOT539B
Azione4.096
2.3GHz ~ 2.4GHz
17.2dB
28V
-
-
1.74A
60W
65V
SOT539B
SOT539B
A2G22S160-01SR3
NXP

IC TRANS RF LDMOS

  • Transistor Type: -
  • Frequency: 2.11GHz
  • Gain: 19.6dB
  • Voltage - Test: 48V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 150mA
  • Power - Output: 32W
  • Voltage - Rated: 125V
  • Package / Case: NI-400S-240
  • Supplier Device Package: NI-400S-240
pacchetto: NI-400S-240
Azione2.016
2.11GHz
19.6dB
48V
-
-
150mA
32W
125V
NI-400S-240
NI-400S-240
MRF6V4300NBR5
NXP

FET RF 110V 450MHZ TO-272-4

  • Transistor Type: LDMOS
  • Frequency: 450MHz
  • Gain: 22dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 900mA
  • Power - Output: 300W
  • Voltage - Rated: 110V
  • Package / Case: TO-272BB
  • Supplier Device Package: TO-272 WB-4
pacchetto: TO-272BB
Azione5.440
450MHz
22dB
50V
-
-
900mA
300W
110V
TO-272BB
TO-272 WB-4
hot MRF8S21200HSR6
NXP

FET RF 2CH 65V 2.14GHZ NI-1230HS

  • Transistor Type: LDMOS (Dual)
  • Frequency: 2.14GHz
  • Gain: 18.1dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.4A
  • Power - Output: 48W
  • Voltage - Rated: 65V
  • Package / Case: NI-1230S
  • Supplier Device Package: NI-1230S
pacchetto: NI-1230S
Azione3.840
2.14GHz
18.1dB
28V
-
-
1.4A
48W
65V
NI-1230S
NI-1230S
ARF468AG
Microsemi Corporation

RF MOSFET (VDMOS)

  • Transistor Type: N-Channel
  • Frequency: 40.68MHz
  • Gain: 15dB
  • Voltage - Test: 150V
  • Current Rating: 22A
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: 300W
  • Voltage - Rated: 500V
  • Package / Case: TO-264-3, TO-264AA
  • Supplier Device Package: TO-264
pacchetto: TO-264-3, TO-264AA
Azione5.920
40.68MHz
15dB
150V
22A
-
-
300W
500V
TO-264-3, TO-264AA
TO-264
PD85006-E
STMicroelectronics

FET RF 40V 870MHZ PWRSO-10RF

  • Transistor Type: LDMOS
  • Frequency: 870MHz
  • Gain: 17dB
  • Voltage - Test: 13.6V
  • Current Rating: 2A
  • Noise Figure: -
  • Current - Test: 200mA
  • Power - Output: 6W
  • Voltage - Rated: 40V
  • Package / Case: PowerSO-10 Exposed Bottom Pad
  • Supplier Device Package: 10-PowerSO
pacchetto: PowerSO-10 Exposed Bottom Pad
Azione3.856
870MHz
17dB
13.6V
2A
-
200mA
6W
40V
PowerSO-10 Exposed Bottom Pad
10-PowerSO
CGHV27015S
Cree/Wolfspeed

RF MOSFET HEMT 50V 12VFDFN

  • Transistor Type: HEMT
  • Frequency: 6GHz
  • Gain: 21dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 60mA
  • Power - Output: 15W
  • Voltage - Rated: 125V
  • Package / Case: 12-VFDFN Exposed Pad
  • Supplier Device Package: 12-DFN (4x3)
pacchetto: 12-VFDFN Exposed Pad
Azione6.288
6GHz
21dB
50V
-
-
60mA
15W
125V
12-VFDFN Exposed Pad
12-DFN (4x3)
475-102N20A-00
IXYS

RF MOSFET N-CHANNEL DE475

  • Transistor Type: N-Channel
  • Frequency: 30MHz
  • Gain: -
  • Voltage - Test: -
  • Current Rating: 1mA
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: 1800W
  • Voltage - Rated: 1000V
  • Package / Case: 6-SMD, Flat Lead Exposed Pad
  • Supplier Device Package: DE475
pacchetto: 6-SMD, Flat Lead Exposed Pad
Azione5.008
30MHz
-
-
1mA
-
-
1800W
1000V
6-SMD, Flat Lead Exposed Pad
DE475
BLF6G38-10G,118
Ampleon USA Inc.

RF FET LDMOS 65V 14DB SOT975C

  • Transistor Type: LDMOS
  • Frequency: 3.4GHz ~ 3.6GHz
  • Gain: 14dB
  • Voltage - Test: 28V
  • Current Rating: 3.1A
  • Noise Figure: -
  • Current - Test: 130mA
  • Power - Output: 2W
  • Voltage - Rated: 65V
  • Package / Case: SOT-975C
  • Supplier Device Package: CDFM2
pacchetto: SOT-975C
Azione6.576
3.4GHz ~ 3.6GHz
14dB
28V
3.1A
-
130mA
2W
65V
SOT-975C
CDFM2
BLC9G24XS-170AVZ
Ampleon USA Inc.

RF FET LDMOS 65V 15.5DB SOT12753

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 2.3GHz ~ 2.4GHz
  • Gain: 15.5dB
  • Voltage - Test: 30V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 250mA
  • Power - Output: 170W
  • Voltage - Rated: 65V
  • Package / Case: SOT1275-3
  • Supplier Device Package: -
pacchetto: SOT1275-3
Azione7.120
2.3GHz ~ 2.4GHz
15.5dB
30V
-
-
250mA
170W
65V
SOT1275-3
-
CE3512K2
CEL

RF FET 4V 12GHZ 4MICROX

  • Transistor Type: pHEMT FET
  • Frequency: 12GHz
  • Gain: 13.7dB
  • Voltage - Test: 2V
  • Current Rating: 15mA
  • Noise Figure: 0.5dB
  • Current - Test: 10mA
  • Power - Output: 125mW
  • Voltage - Rated: 4V
  • Package / Case: 4-Micro-X
  • Supplier Device Package: 4-Micro-X
pacchetto: 4-Micro-X
Azione24.762
12GHz
13.7dB
2V
15mA
0.5dB
10mA
125mW
4V
4-Micro-X
4-Micro-X
BLA6H0912L-1000U
Ampleon USA Inc.

RF FET LDMOS 100V 15.5DB SOT539A

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 1.03GHz
  • Gain: 15.5dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 200mA
  • Power - Output: 1000W
  • Voltage - Rated: 100V
  • Package / Case: SOT539A
  • Supplier Device Package: SOT539A
pacchetto: SOT539A
Azione4.128
1.03GHz
15.5dB
50V
-
-
200mA
1000W
100V
SOT539A
SOT539A
CGH55030F2
Cree/Wolfspeed

FET RF 84V 6GHZ 440166

  • Transistor Type: HEMT
  • Frequency: 4.5GHz ~ 6GHz
  • Gain: 11dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 250mA
  • Power - Output: 30W
  • Voltage - Rated: 84V
  • Package / Case: 440166
  • Supplier Device Package: 440166
pacchetto: 440166
Azione6.204
4.5GHz ~ 6GHz
11dB
28V
-
-
250mA
30W
84V
440166
440166