Pagina 9 - Transistor - JFET | Dispositivi a semiconduttore discreti | Heisener Electronics
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Transistor - JFET

Record 1.142
Pagina  9/41
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Voltage - Breakdown (V(BR)GSS)
Drain to Source Voltage (Vdss)
Current - Drain (Idss) @ Vds (Vgs=0)
Current Drain (Id) - Max
Voltage - Cutoff (VGS off) @ Id
Input Capacitance (Ciss) (Max) @ Vds
Resistance - RDS(On)
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
MX2N4857UB
Microsemi Corporation

N CHANNEL JFET

  • FET Type: -
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): -
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Resistance - RDS(On): -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione5.968
-
-
-
-
-
-
-
-
-
-
-
-
MV2N4856UB
Microsemi Corporation

N CHANNEL JFET

  • FET Type: -
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): -
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Resistance - RDS(On): -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione5.216
-
-
-
-
-
-
-
-
-
-
-
-
2N5115JTX02
Vishay Siliconix

JFET P-CH 30V TO-18

  • FET Type: -
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): -
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Resistance - RDS(On): -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package: TO-206AA (TO-18)
pacchetto: TO-206AA, TO-18-3 Metal Can
Azione7.616
-
-
-
-
-
-
-
-
-
Through Hole
TO-206AA, TO-18-3 Metal Can
TO-206AA (TO-18)
2N4856JTXV02
Vishay Siliconix

MOSFET N-CH 40V 50MA TO-18

  • FET Type: -
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): -
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Resistance - RDS(On): -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package: TO-206AA (TO-18)
pacchetto: TO-206AA, TO-18-3 Metal Can
Azione6.560
-
-
-
-
-
-
-
-
-
Through Hole
TO-206AA, TO-18-3 Metal Can
TO-206AA (TO-18)
J2A012YXS/T1AY403,
NXP

TRANSISTOR JFET 8PLLCC

  • FET Type: -
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): -
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Resistance - RDS(On): -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione5.776
-
-
-
-
-
-
-
-
-
-
-
-
2N5639
ON Semiconductor

JFET N-CH 35V 0.31W TO92

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 35V
  • Drain to Source Voltage (Vdss): 30V
  • Current - Drain (Idss) @ Vds (Vgs=0): 25mA @ 20V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: -
  • Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 12V (VGS)
  • Resistance - RDS(On): 60 Ohm
  • Power - Max: 310mW
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
pacchetto: TO-226-3, TO-92-3 (TO-226AA)
Azione3.056
35V
30V
25mA @ 20V
-
-
10pF @ 12V (VGS)
60 Ohm
310mW
-65°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
J270_D27Z
Fairchild/ON Semiconductor

JFET P-CH 30V 0.35W TO92

  • FET Type: P-Channel
  • Voltage - Breakdown (V(BR)GSS): 30V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 2mA @ 15V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 500mV @ 1nA
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Resistance - RDS(On): -
  • Power - Max: 350mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Azione3.344
30V
-
2mA @ 15V
-
500mV @ 1nA
-
-
350mW
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
FJN598JABU
Fairchild/ON Semiconductor

JFET N-CH 20V 0.15W TO92

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 20V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 100µA @ 5V
  • Current Drain (Id) - Max: 1mA
  • Voltage - Cutoff (VGS off) @ Id: 600mV @ 1µA
  • Input Capacitance (Ciss) (Max) @ Vds: 3.5pF @ 5V
  • Resistance - RDS(On): -
  • Power - Max: 150mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
pacchetto: TO-226-3, TO-92-3 (TO-226AA)
Azione3.296
20V
-
100µA @ 5V
1mA
600mV @ 1µA
3.5pF @ 5V
-
150mW
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
2N5638_D26Z
Fairchild/ON Semiconductor

JFET N-CH 30V 0.35W TO92

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 30V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 50mA @ 20V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: -
  • Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 12V (VGS)
  • Resistance - RDS(On): 30 Ohm
  • Power - Max: 350mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Azione6.144
30V
-
50mA @ 20V
-
-
10pF @ 12V (VGS)
30 Ohm
350mW
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
2N5461_D26Z
Fairchild/ON Semiconductor

JFET P-CH 40V 0.35W TO92

  • FET Type: P-Channel
  • Voltage - Breakdown (V(BR)GSS): 40V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 2mA @ 15V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 1V @ 1µA
  • Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
  • Resistance - RDS(On): -
  • Power - Max: 350mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Azione6.784
40V
-
2mA @ 15V
-
1V @ 1µA
7pF @ 15V
-
350mW
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
2SK3372GUL
Panasonic Electronic Components

JFET N-CH 2MA 100MW SSSMINI-3

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Drain (Idss) @ Vds (Vgs=0): 107µA @ 2V
  • Current Drain (Id) - Max: 2mA
  • Voltage - Cutoff (VGS off) @ Id: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Resistance - RDS(On): -
  • Power - Max: 100mW
  • Operating Temperature: -20°C ~ 80°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-723
  • Supplier Device Package: SSSMini3-F2
pacchetto: SOT-723
Azione4.048
-
20V
107µA @ 2V
2mA
-
-
-
100mW
-20°C ~ 80°C (TA)
Surface Mount
SOT-723
SSSMini3-F2
2SK879-GR(TE85L,F)
Toshiba Semiconductor and Storage

JFET N-CH 0.1W USM

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 2.6mA @ 10V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 400mV @ 100nA
  • Input Capacitance (Ciss) (Max) @ Vds: 8.2pF @ 10V
  • Resistance - RDS(On): -
  • Power - Max: 100mW
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: USM
pacchetto: SC-70, SOT-323
Azione5.024
-
-
2.6mA @ 10V
-
400mV @ 100nA
8.2pF @ 10V
-
100mW
125°C (TJ)
Surface Mount
SC-70, SOT-323
USM
hot MMBFJ175LT1G
ON Semiconductor

JFET P-CH 30V 0.225W SOT23

  • FET Type: P-Channel
  • Voltage - Breakdown (V(BR)GSS): 30V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 7mA @ 15V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 3V @ 10nA
  • Input Capacitance (Ciss) (Max) @ Vds: 11pF @ 10V (VGS)
  • Resistance - RDS(On): 125 Ohm
  • Power - Max: 225mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3 (TO-236)
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione247.800
30V
-
7mA @ 15V
-
3V @ 10nA
11pF @ 10V (VGS)
125 Ohm
225mW
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
hot MMBFJ202
Fairchild/ON Semiconductor

JFET N-CH 40V 350MW SOT23

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 40V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 900µA @ 20V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 800mV @ 10nA
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Resistance - RDS(On): -
  • Power - Max: 350mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione103.704
40V
-
900µA @ 20V
-
800mV @ 10nA
-
-
350mW
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
hot MMBF4392LT1G
ON Semiconductor

JFET N-CH 30V 0.225W SOT23

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 30V
  • Drain to Source Voltage (Vdss): 30V
  • Current - Drain (Idss) @ Vds (Vgs=0): 25mA @ 15V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 2V @ 10nA
  • Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 15V
  • Resistance - RDS(On): 60 Ohm
  • Power - Max: 225mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3 (TO-236)
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione282.228
30V
30V
25mA @ 15V
-
2V @ 10nA
14pF @ 15V
60 Ohm
225mW
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
SST176-SOT-23-3L-ROHS
Linear Integrated Systems, Inc.

JFET P-CH 30V SOT23-3

  • FET Type: P-Channel
  • Voltage - Breakdown (V(BR)GSS): 30 V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): -
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Resistance - RDS(On): 250 Ohms
  • Power - Max: 350 mW
  • Operating Temperature: -55°C ~ 135°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
pacchetto: -
Azione9.015
30 V
-
-
-
-
-
250 Ohms
350 mW
-55°C ~ 135°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
U405-TO-71-6L-ROHS
Linear Integrated Systems, Inc.

JFET 2N-CH 50V TO71

  • FET Type: 2 N-Channel (Dual)
  • Voltage - Breakdown (V(BR)GSS): 50 V
  • Drain to Source Voltage (Vdss): 50 V
  • Current - Drain (Idss) @ Vds (Vgs=0): 500 µA @ 10 V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 500 mV @ 1 nA
  • Input Capacitance (Ciss) (Max) @ Vds: 8pF @ 15V
  • Resistance - RDS(On): -
  • Power - Max: 300 mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-71-6 Metal Can
  • Supplier Device Package: TO-71
pacchetto: -
Azione1.497
50 V
50 V
500 µA @ 10 V
-
500 mV @ 1 nA
8pF @ 15V
-
300 mW
-55°C ~ 150°C (TJ)
Through Hole
TO-71-6 Metal Can
TO-71
2N5564-TO-71-6L-ROHS
Linear Integrated Systems, Inc.

JFET 2N-CH 40V TO71

  • FET Type: 2 N-Channel (Dual)
  • Voltage - Breakdown (V(BR)GSS): 40 V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 7 mA @ 15 V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 500 mV @ 2 mA
  • Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 15V
  • Resistance - RDS(On): 50 Ohms
  • Power - Max: 500 mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-71-6 Metal Can
  • Supplier Device Package: TO-71
pacchetto: -
Azione594
40 V
-
7 mA @ 15 V
-
500 mV @ 2 mA
25pF @ 15V
50 Ohms
500 mW
-55°C ~ 150°C (TJ)
Through Hole
TO-71-6 Metal Can
TO-71
2SK1070PIETR-E
Renesas Electronics Corporation

JFET N-CH 22V 50MA 3MPAK

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 22 V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 12 mA @ 5 V
  • Current Drain (Id) - Max: 50 mA
  • Voltage - Cutoff (VGS off) @ Id: 0 V @ 10 µA
  • Input Capacitance (Ciss) (Max) @ Vds: 9pF @ 5V
  • Resistance - RDS(On): -
  • Power - Max: 150 mW
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: 3-MPAK
pacchetto: -
Request a Quote
22 V
-
12 mA @ 5 V
50 mA
0 V @ 10 µA
9pF @ 5V
-
150 mW
150°C
Surface Mount
TO-236-3, SC-59, SOT-23-3
3-MPAK
JFE150DBVR
Texas Instruments

PROTOTYPE

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 40 V
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Drain (Idss) @ Vds (Vgs=0): 24 mA @ 10 V
  • Current Drain (Id) - Max: 50 mA
  • Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 100 nA
  • Input Capacitance (Ciss) (Max) @ Vds: 24pF @ 5V
  • Resistance - RDS(On): -
  • Power - Max: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-74A, SOT-753
  • Supplier Device Package: SOT-23-5
pacchetto: -
Request a Quote
40 V
40 V
24 mA @ 10 V
50 mA
1.5 V @ 100 nA
24pF @ 5V
-
-
-55°C ~ 150°C (TJ)
Surface Mount
SC-74A, SOT-753
SOT-23-5
BSV80
Central Semiconductor Corp

JFET N-CH TO18

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Drain (Idss) @ Vds (Vgs=0): 10 mA @ 15 V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
  • Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V
  • Resistance - RDS(On): 60 Ohms
  • Power - Max: 350 mW
  • Operating Temperature: -65°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package: TO-18
pacchetto: -
Request a Quote
-
40 V
10 mA @ 15 V
-
1 V @ 1 nA
5pF @ 10V
60 Ohms
350 mW
-65°C ~ 175°C (TJ)
Through Hole
TO-206AA, TO-18-3 Metal Can
TO-18
2SK1070PICTL-E
Renesas Electronics Corporation

JFET N-CH 22V 50MA 3MPAK

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 22 V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 12 mA @ 5 V
  • Current Drain (Id) - Max: 50 mA
  • Voltage - Cutoff (VGS off) @ Id: 0 V @ 10 µA
  • Input Capacitance (Ciss) (Max) @ Vds: 9pF @ 5V
  • Resistance - RDS(On): -
  • Power - Max: 150 mW
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: 3-MPAK
pacchetto: -
Request a Quote
22 V
-
12 mA @ 5 V
50 mA
0 V @ 10 µA
9pF @ 5V
-
150 mW
150°C
Surface Mount
TO-236-3, SC-59, SOT-23-3
3-MPAK
2N4391-PBFREE
Central Semiconductor Corp

JFET N-CH 40V 100PA TO18

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 40 V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 150 mA @ 20 V
  • Current Drain (Id) - Max: 100 pA
  • Voltage - Cutoff (VGS off) @ Id: 10 V @ 1 nA
  • Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
  • Resistance - RDS(On): 30 Ohms
  • Power - Max: 1.8 W
  • Operating Temperature: -65°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package: TO-18
pacchetto: -
Request a Quote
40 V
-
150 mA @ 20 V
100 pA
10 V @ 1 nA
14pF @ 20V
30 Ohms
1.8 W
-65°C ~ 175°C (TJ)
Through Hole
TO-206AA, TO-18-3 Metal Can
TO-18
IF170AST3TR
InterFET

JFET N-Channel -30V Low Noise

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Drain (Idss) @ Vds (Vgs=0): 4 mA @ 10 V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 600 mV @ 1 nA
  • Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 10V
  • Resistance - RDS(On): 80 Ohms
  • Power - Max: 350 mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-3
  • Supplier Device Package: SOT-23-3
pacchetto: -
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-
30 V
4 mA @ 10 V
-
600 mV @ 1 nA
15pF @ 10V
80 Ohms
350 mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
SOT-23-3
2N5457_L99Z
onsemi

JFET N-CH 25V TO92

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 25 V
  • Drain to Source Voltage (Vdss): 25 V
  • Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 500 mV @ 10 nA
  • Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
  • Resistance - RDS(On): -
  • Power - Max: 310 mW
  • Operating Temperature: 135°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92 (TO-226)
pacchetto: -
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25 V
25 V
5 mA @ 15 V
-
500 mV @ 10 nA
7pF @ 15V
-
310 mW
135°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92 (TO-226)
MX2N5115UB-TR
Microchip Technology

JFET P-CH 30V UB

  • FET Type: P-Channel
  • Voltage - Breakdown (V(BR)GSS): 30 V
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Drain (Idss) @ Vds (Vgs=0): 15 mA @ 15 V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 3 V @ 1 nA
  • Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 15V
  • Resistance - RDS(On): 100 Ohms
  • Power - Max: 500 mW
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, No Lead
  • Supplier Device Package: UB
pacchetto: -
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30 V
30 V
15 mA @ 15 V
-
3 V @ 1 nA
25pF @ 15V
100 Ohms
500 mW
-65°C ~ 200°C (TJ)
Surface Mount
3-SMD, No Lead
UB
LS3954-TO-71-6L
Linear Integrated Systems, Inc.

JFET 2N-CH 60V TO71

  • FET Type: 2 N-Channel (Dual)
  • Voltage - Breakdown (V(BR)GSS): 60 V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 500 µA @ 20 V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
  • Input Capacitance (Ciss) (Max) @ Vds: 6pF @ 20V
  • Resistance - RDS(On): -
  • Power - Max: 400 mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-71-6 Metal Can
  • Supplier Device Package: TO-71
pacchetto: -
Azione4.338
60 V
-
500 µA @ 20 V
-
1 V @ 1 nA
6pF @ 20V
-
400 mW
-55°C ~ 150°C (TJ)
Through Hole
TO-71-6 Metal Can
TO-71
MMBF4393LT1
onsemi

JFET N-CH 30V 0.225W SOT23

  • FET Type: -
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): -
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Resistance - RDS(On): -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
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