Pagina 9 - Prodotti Global Power Technologies Group | Heisener Electronics
Contattaci
SalesDept@heisener.com 86-755-83210559 x831
Accesso/Registrati
Language Translation

* Please refer to the English Version as our Official Version.

BOM
Carrello 0

Prodotti Global Power Technologies Group

Record 373
Pagina  9/13
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
GHIS030A120S-A1
Global Power Technologies Group

IGBT BOOST CHOP 1200V 60A SOT227

  • IGBT Type: Trench Field Stop
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 60A
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
  • Current - Collector Cutoff (Max): 1mA
  • Input Capacitance (Cies) @ Vce: 4nF @ 30V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227
pacchetto: SOT-227-4, miniBLOC
Azione4.176
GP2M012A060F
Global Power Technologies Group

MOSFET N-CH 600V 12A TO220F

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1890pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 53.4W (Tc)
  • Rds On (Max) @ Id, Vgs: 650 mOhm @ 6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F
  • Package / Case: TO-220-3 Full Pack
pacchetto: TO-220-3 Full Pack
Azione4.384
GP1M009A090FH
Global Power Technologies Group

MOSFET N-CH 900V 9A TO220F

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 900V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2324pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 48W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 4.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F
  • Package / Case: TO-220-3 Full Pack
pacchetto: TO-220-3 Full Pack
Azione3.280
GP1M009A020FG
Global Power Technologies Group

MOSFET N-CH 200V 9A TO220F

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 414pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 17.3W (Tc)
  • Rds On (Max) @ Id, Vgs: 400 mOhm @ 4.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F
  • Package / Case: TO-220-3 Full Pack
pacchetto: TO-220-3 Full Pack
Azione2.100
GP1M008A025PG
Global Power Technologies Group

MOSFET N-CH 250V 8A IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 423pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 52W (Tc)
  • Rds On (Max) @ Id, Vgs: 600 mOhm @ 4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
pacchetto: TO-251-3 Short Leads, IPak, TO-251AA
Azione7.824
GP2M007A065HG
Global Power Technologies Group

MOSFET N-CH 650V 6.5A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1072pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 120W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 3.25A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
pacchetto: TO-220-3
Azione6.208
GP1M016A025PG
Global Power Technologies Group

MOSFET N-CH 250V 16A IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 944pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 93.9W (Tc)
  • Rds On (Max) @ Id, Vgs: 240 mOhm @ 8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
pacchetto: TO-251-3 Short Leads, IPak, TO-251AA
Azione7.568
GP1M013A050FH
Global Power Technologies Group

MOSFET N-CH 500V 13A TO220F

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1918pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 52W (Tc)
  • Rds On (Max) @ Id, Vgs: 480 mOhm @ 6.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F
  • Package / Case: TO-220-3 Full Pack
pacchetto: TO-220-3 Full Pack
Azione5.824
GP1M009A060FH
Global Power Technologies Group

MOSFET N-CH 600V 9A TO220F

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1440pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 51.4W (Tc)
  • Rds On (Max) @ Id, Vgs: 1 Ohm @ 4.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F
  • Package / Case: TO-220-3 Full Pack
pacchetto: TO-220-3 Full Pack
Azione2.608
GP1M009A050HS
Global Power Technologies Group

MOSFET N-CH 500V 8.5A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1195pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 127W (Tc)
  • Rds On (Max) @ Id, Vgs: 850 mOhm @ 4.25A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
pacchetto: TO-220-3
Azione3.536
GP1M008A050PG
Global Power Technologies Group

MOSFET N-CH 500V 8A IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 937pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 120W (Tc)
  • Rds On (Max) @ Id, Vgs: 850 mOhm @ 4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
pacchetto: TO-251-3 Short Leads, IPak, TO-251AA
Azione3.552
GP1M004A090FH
Global Power Technologies Group

MOSFET N-CH 900V 4A TO220F

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 900V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 955pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 38.7W (Tc)
  • Rds On (Max) @ Id, Vgs: 4 Ohm @ 2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F
  • Package / Case: TO-220-3 Full Pack
pacchetto: TO-220-3 Full Pack
Azione7.408
GCMS008A120B1B1
Global Power Technologies Group

SIC MOSFET/SBD HALF BRIDGE MODUL

  • Type: MOSFET
  • Configuration: Half Bridge
  • Current: 300A
  • Voltage: 1200V
  • Voltage - Isolation: 2500Vrms
  • Package / Case: Power Module
pacchetto: Power Module
Azione6.064
GHIS100A120T2C1
Global Power Technologies Group

SI IGBT & SIC SBD HYBRID MODULES

  • Type: IGBT
  • Configuration: 3 Phase
  • Current: 195A
  • Voltage: 1200V
  • Voltage - Isolation: 2500Vrms
  • Package / Case: Power Module
pacchetto: Power Module
Azione2.128
GHIS200A120S3B1
Global Power Technologies Group

SI IGBT & SIC SBD HYBRID MODULES

  • Type: IGBT
  • Configuration: Half Bridge
  • Current: 400A
  • Voltage: 1200V
  • Voltage - Isolation: 2500Vrms
  • Package / Case: Power Module
pacchetto: Power Module
Azione3.296
GCMS012A120S1-E1
Global Power Technologies Group

SIC MOSFET/ SBD MODULE SOT-227 C

  • Type: MOSFET
  • Configuration: 1 Phase
  • Current: 200A
  • Voltage: 1200V
  • Voltage - Isolation: 2500Vrms
  • Package / Case: SOT-227-4, miniBLOC
pacchetto: SOT-227-4, miniBLOC
Azione2.480
GHIS100A120T2P2
Global Power Technologies Group

SI IGBT & SIC SBD HYBRID MODULES

  • Type: IGBT
  • Configuration: 3 Phase
  • Current: 200A
  • Voltage: 1200V
  • Voltage - Isolation: 2500Vrms
  • Package / Case: Power Module
pacchetto: Power Module
Azione7.920
GCMS020A120S1-E1
Global Power Technologies Group

SIC MOSFET/ SBD MODULE SOT-227 C

  • Type: MOSFET
  • Configuration: 1 Phase
  • Current: 120A
  • Voltage: 1200V
  • Voltage - Isolation: 2500Vrms
  • Package / Case: SOT-227-4, miniBLOC
pacchetto: SOT-227-4, miniBLOC
Azione7.072
GDP06S060A
Global Power Technologies Group

DIODE SCHOTTKY 600V 6A TO220-2

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 6A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 6A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 100µA @ 600V
  • Capacitance @ Vr, F: 243pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220-2
  • Operating Temperature - Junction: -55°C ~ 135°C
pacchetto: TO-220-2
Azione3.280
GP2D012A065A
Global Power Technologies Group

DIODE SCHOTTKY 650V 12A TO220-2

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 650V
  • Current - Average Rectified (Io): 12A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.65V @ 12A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 120µA @ 650V
  • Capacitance @ Vr, F: 632pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220-2
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: TO-220-2
Azione3.936
GP2D005A065C
Global Power Technologies Group

SIC SCHOTTKY RECTIFIER

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 650V
  • Current - Average Rectified (Io): 15A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.65V @ 5A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50µA @ 650V
  • Capacitance @ Vr, F: 264pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252, (D-Pak)
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
Azione7.216
GP2D010A120B
Global Power Technologies Group

DIODE SCHOTTKY 1.2KV 10A TO247-2

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 20µA @ 1200V
  • Capacitance @ Vr, F: 635pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247-2
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: TO-247-2
Azione18.372
GHXS030A060S-D4
Global Power Technologies Group

DIODE SBD SHOTT 600V 30A SOT227

  • Diode Configuration: 2 Independent
  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io) (per Diode): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 30A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100µA @ 600V
  • Operating Temperature - Junction: -55°C ~ 175°C
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227
pacchetto: SOT-227-4, miniBLOC
Azione3.840
GSXD100A018S1-D3
Global Power Technologies Group

DIODE SCHOTTKY 180V 100A SOT227

  • Diode Configuration: 2 Independent
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 180V
  • Current - Average Rectified (Io) (per Diode): 100A
  • Voltage - Forward (Vf) (Max) @ If: 920mV @ 100V
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 3mA @ 180V
  • Operating Temperature - Junction: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227
pacchetto: SOT-227-4, miniBLOC
Azione6.576
GSXF100A020S1-D3
Global Power Technologies Group

DIODE FAST REC 200V 120AA SOT227

  • Diode Configuration: 2 Independent
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io) (per Diode): 120A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 100A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 25µA @ 200V
  • Operating Temperature - Junction: -55°C ~ 175°C
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227
pacchetto: SOT-227-4, miniBLOC
Azione6.432
GSXD080A008S1-D3
Global Power Technologies Group

DIODE SCHOTTKY 80V 80A SOT227

  • Diode Configuration: 2 Independent
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 80V
  • Current - Average Rectified (Io) (per Diode): 80A
  • Voltage - Forward (Vf) (Max) @ If: 840mV @ 80A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 80V
  • Operating Temperature - Junction: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227
pacchetto: SOT-227-4, miniBLOC
Azione5.104
GSXD050A010S1-D3
Global Power Technologies Group

DIODE SCHOTTKY 100V 50A SOT227

  • Diode Configuration: 2 Independent
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io) (per Diode): 50A
  • Voltage - Forward (Vf) (Max) @ If: 840mV @ 50A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 100V
  • Operating Temperature - Junction: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227
pacchetto: SOT-227-4, miniBLOC
Azione6.132
GSXD050A008S1-D3
Global Power Technologies Group

DIODE SCHOTTKY 80V 50A SOT227

  • Diode Configuration: 2 Independent
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 80V
  • Current - Average Rectified (Io) (per Diode): 50A
  • Voltage - Forward (Vf) (Max) @ If: 840mV @ 50A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 80V
  • Operating Temperature - Junction: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227
pacchetto: SOT-227-4, miniBLOC
Azione6.112
GSXD030A004S1-D3
Global Power Technologies Group

DIODE SCHOTTKY 45V 30A SOT227

  • Diode Configuration: 2 Independent
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io) (per Diode): 30A
  • Voltage - Forward (Vf) (Max) @ If: 700mV @ 30A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 45V
  • Operating Temperature - Junction: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227
pacchetto: SOT-227-4, miniBLOC
Azione5.472
GSXD050A015S1-D3
Global Power Technologies Group

DIODE SCHOTTKY 150V 50A SOT227

  • Diode Configuration: 2 Independent
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 150V
  • Current - Average Rectified (Io) (per Diode): 50A
  • Voltage - Forward (Vf) (Max) @ If: 880mV @ 50A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 3mA @ 150V
  • Operating Temperature - Junction: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227
pacchetto: SOT-227-4, miniBLOC
Azione7.600