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Infineon Technologies |
IGBT 600V 80A 428W TO247-3
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 80A
- Current - Collector Pulsed (Icm): 225A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
- Power - Max: 428W
- Switching Energy: 4.5mJ
- Input Type: Standard
- Gate Charge: 470nC
- Td (on/off) @ 25°C: 33ns/330ns
- Test Condition: 400V, 75A, 5 Ohm, 15V
- Reverse Recovery Time (trr): 121ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3
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pacchetto: TO-247-3 |
Azione57.048 |
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Infineon Technologies |
MOSFET N-CH 100V 17A TO251-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 20µA
- Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 569pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 44W (Tc)
- Rds On (Max) @ Id, Vgs: 64 mOhm @ 17A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO251-3
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
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pacchetto: TO-251-3 Short Leads, IPak, TO-251AA |
Azione7.072 |
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Infineon Technologies |
MOSFET N-CH 100V 100A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 180µA
- Gate Charge (Qg) (Max) @ Vgs: 139nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 9200pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 214W (Tc)
- Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 100A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO-220-3
- Package / Case: TO-220-3
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pacchetto: TO-220-3 |
Azione8.952 |
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Infineon Technologies |
MOSFET N-CH 20V 75A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 19nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1996pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 90W (Tc)
- Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione6.352 |
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Infineon Technologies |
MOSFET N-CH 40V 104A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 104A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 68nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 3445pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 2.4W (Ta), 167W (Tc)
- Rds On (Max) @ Id, Vgs: 8 mOhm @ 62A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione243.624 |
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Infineon Technologies |
MOSFET N-CH 20V 15A 8-SOIC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 42nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta)
- Rds On (Max) @ Id, Vgs: 7 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione6.864 |
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Infineon Technologies |
MOSFET N-CH 100V 10A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 48W (Tc)
- Rds On (Max) @ Id, Vgs: 180 mOhm @ 6A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione4.624 |
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Infineon Technologies |
MOSFET N-CH 55V 110A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 146nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3247pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 200W (Tc)
- Rds On (Max) @ Id, Vgs: 8 mOhm @ 62A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione10.728 |
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Infineon Technologies |
MOSFET N-CH 100V 77A DIRECTFET2
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta), 14.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 25µA
- Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 515pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.4W (Ta), 30W (Tc)
- Rds On (Max) @ Id, Vgs: 62 mOhm @ 8.9A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DIRECTFET SB
- Package / Case: DirectFET? Isometric SB
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pacchetto: DirectFET? Isometric SB |
Azione4.112 |
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Infineon Technologies |
MOSFET N-CH 200V 5A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 43W (Tc)
- Rds On (Max) @ Id, Vgs: 600 mOhm @ 2.9A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione2.560 |
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Infineon Technologies |
MOSFET N-CH 60V 120A TO-247AC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6540pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 280W (Tc)
- Rds On (Max) @ Id, Vgs: 3 mOhm @ 75A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AC
- Package / Case: TO-247-3
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pacchetto: TO-247-3 |
Azione15.144 |
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Infineon Technologies |
MOSFET P-CH 55V 18A DPAK
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 57W (Tc)
- Rds On (Max) @ Id, Vgs: 110 mOhm @ 9.6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione6.656 |
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Infineon Technologies |
MOSFET N-CH 40V 49A TDSON-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 49A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 14µA
- Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 35W (Tc)
- Rds On (Max) @ Id, Vgs: 9.3 mOhm @ 40A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8
- Package / Case: 8-PowerTDFN
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pacchetto: 8-PowerTDFN |
Azione351.960 |
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Infineon Technologies |
MOSFET N/P-CH 30V 4A/3A 8SOIC
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 4A, 3A
- Rds On (Max) @ Id, Vgs: 50 mOhm @ 2.4A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V
- Power - Max: 1.4W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione6.608 |
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Infineon Technologies |
IGBT 600V 24MDIP
- Type: IGBT
- Configuration: 3 Phase
- Current: 6A
- Voltage: 600V
- Voltage - Isolation: 2000Vrms
- Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
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pacchetto: 24-PowerDIP Module (1.028", 26.10mm) |
Azione5.344 |
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Infineon Technologies |
DIODE SCHOTTKY 30V 500MA SC79-2
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30V
- Current - Average Rectified (Io): 500mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 620mV @ 500mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 25µA @ 30V
- Capacitance @ Vr, F: 10pF @ 5V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SC-79, SOD-523
- Supplier Device Package: PG-SC79-2
- Operating Temperature - Junction: -55°C ~ 125°C
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pacchetto: SC-79, SOD-523 |
Azione3.456 |
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Infineon Technologies |
DIODE GEN PURP 1.2KV 25A WAFER
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 25A (DC)
- Voltage - Forward (Vf) (Max) @ If: 2.1V @ 25A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 27µA @ 1200V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Sawn on foil
- Operating Temperature - Junction: -55°C ~ 150°C
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pacchetto: Die |
Azione2.416 |
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Infineon Technologies |
DIODE SCHOTTKY 40V 120MA SOT23-3
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io): 120mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 1V @ 40mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 100ps
- Current - Reverse Leakage @ Vr: 1µA @ 30V
- Capacitance @ Vr, F: 5pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23-3
- Operating Temperature - Junction: -55°C ~ 150°C
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pacchetto: TO-236-3, SC-59, SOT-23-3 |
Azione7.152 |
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Infineon Technologies |
IC REG LINEAR 5V 400MA TO252-3
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 40V
- Voltage - Output (Min/Fixed): 5V
- Voltage - Output (Max): -
- Voltage Dropout (Max): 0.5V @ 250mA
- Current - Output: 400mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): 220µA ~ 30mA
- PSRR: 60dB (100Hz)
- Control Features: -
- Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: PG-TO252-3
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pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione4.096 |
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Infineon Technologies |
IC REG LINEAR 2.5V 300MA SOT23-5
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 10V
- Voltage - Output (Min/Fixed): 2.5V
- Voltage - Output (Max): -
- Voltage Dropout (Max): 0.4V @ 300mA
- Current - Output: 300mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): -
- PSRR: -
- Control Features: Enable
- Protection Features: Over Current, Over Temperature
- Operating Temperature: 0°C ~ 125°C
- Mounting Type: Surface Mount
- Package / Case: SC-74A, SOT-753
- Supplier Device Package: SOT-23-5
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pacchetto: SC-74A, SOT-753 |
Azione35.400 |
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Infineon Technologies |
IC LINE INTERFACE SLIC PLCC-28
- Function: Subscriber Line Interface Concept (SLIC)
- Interface: -
- Number of Circuits: 1
- Voltage - Supply: 5V
- Current - Supply: 2.8mA
- Power (Watts): 730mW
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 28-LCC (J-Lead)
- Supplier Device Package: P/PG-LCC-28
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pacchetto: 28-LCC (J-Lead) |
Azione5.072 |
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Infineon Technologies |
IC CHIPSET VDSL-L 4BAND 8-PDSO
- Function: VDSL Line Driver Chip
- Interface: EEPROM, MII, PCM, Serial UART
- Number of Circuits: 1
- Voltage - Supply: -
- Current - Supply: -
- Power (Watts): 1.5W
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: P-PDSO-8
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pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione4.480 |
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Infineon Technologies |
IC TXRX HIGH-END LIN 8DSOP
- Type: Transceiver
- Protocol: LIN
- Number of Drivers/Receivers: 1/1
- Duplex: -
- Receiver Hysteresis: 120mV
- Data Rate: 20kbps
- Voltage - Supply: 5.5 V ~ 27 V
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: PG-DSO-8-16
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pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione3.424 |
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Infineon Technologies |
IC MCU 16BIT 384KB FLASH 100LQFP
- Core Processor: C166SV2
- Core Size: 16-Bit
- Speed: 80MHz
- Connectivity: CAN, EBI/EMI, I2C, LIN, SPI, SSC, UART/USART, USI
- Peripherals: I2S, POR, PWM, WDT
- Number of I/O: 76
- Program Memory Size: 384KB (384K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 34K x 8
- Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V
- Data Converters: A/D 11x10b
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: -
- Package / Case: 100-LQFP Exposed Pad
- Supplier Device Package: PG-LQFP-100-8
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pacchetto: 100-LQFP Exposed Pad |
Azione7.280 |
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Infineon Technologies |
IC MCU 16BIT 64KB FLASH 100TQFP
- Core Processor: C166SV2
- Core Size: 16-Bit
- Speed: 40MHz
- Connectivity: EBI/EMI, SPI, UART/USART
- Peripherals: PWM, WDT
- Number of I/O: 79
- Program Memory Size: 64KB (64K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 6K x 8
- Voltage - Supply (Vcc/Vdd): 2.35 V ~ 2.7 V
- Data Converters: -
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: -
- Package / Case: 100-LQFP
- Supplier Device Package: 100-TQFP (14x14)
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pacchetto: 100-LQFP |
Azione2.304 |
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Infineon Technologies |
SECURITY IC'S/AUTHENTICATION IC'
- Applications: Embedded Security Trusted Computing
- Core Processor: 16-Bit
- Program Memory Type: -
- Controller Series: -
- RAM Size: -
- Interface: LPC
- Number of I/O: 1
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 28-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: PG-TSSOP-28-2
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pacchetto: 28-TSSOP (0.173", 4.40mm Width) |
Azione4.864 |
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Infineon Technologies |
IC SECURITY CHIP CARD CTLR
- Applications: Security
- Core Processor: -
- Program Memory Type: -
- Controller Series: -
- RAM Size: -
- Interface: ISO14443-3 Type A, NFC Forum Type 2
- Number of I/O: -
- Voltage - Supply: -
- Operating Temperature: -25°C ~ 70°C
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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pacchetto: - |
Azione2.480 |
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Infineon Technologies |
IC HALL EFFECT SENSOR SSO-3
- Function: -
- Technology: -
- Polarization: -
- Sensing Range: -
- Test Condition: -
- Voltage - Supply: -
- Current - Supply (Max): -
- Current - Output (Max): -
- Output Type: -
- Features: -
- Operating Temperature: -
- Package / Case: -
- Supplier Device Package: -
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pacchetto: - |
Azione8.352 |
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Infineon Technologies |
IC RELAY PHOTOVO 250V 170MA 6DIP
- Circuit: SPST-NO (1 Form A)
- Output Type: AC, DC
- On-State Resistance (Max): 15 Ohm
- Load Current: 170mA
- Voltage - Input: 1.2VDC
- Voltage - Load: 0 ~ 250 V
- Mounting Type: Through Hole
- Termination Style: PC Pin
- Package / Case: 6-DIP (0.300", 7.62mm)
- Supplier Device Package: 6-DIP
- Relay Type: Relay
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pacchetto: 6-DIP (0.300", 7.62mm) |
Azione35.112 |
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Infineon Technologies |
LITIX
- Type: Linear
- Topology: -
- Internal Switch(s): Yes
- Number of Outputs: 3
- Voltage - Supply (Min): 5.5V
- Voltage - Supply (Max): 40V
- Voltage - Output: 40V
- Current - Output / Channel: 60mA
- Frequency: -
- Dimming: PWM
- Applications: Automotive
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
- Supplier Device Package: PG-TSDSO-14
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pacchetto: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad |
Azione4.688 |
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