Pagina 4 - Prodotti ON Semiconductor - Transistor - FET, MOSFET - Singoli | Heisener Electronics
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Prodotti ON Semiconductor - Transistor - FET, MOSFET - Singoli

Record 2.260
Pagina  4/76
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
5LN01M-TL-H
ON Semiconductor

MOSFET N-CH 50V 100MA SC59

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 1.57nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6.6pF @ 10V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 150mW (Ta)
  • Rds On (Max) @ Id, Vgs: 7.8 Ohm @ 50mA, 4V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 3-MCP
  • Package / Case: SC-70, SOT-323
pacchetto: SC-70, SOT-323
Azione50.538
MOSFET (Metal Oxide)
50V
100mA (Ta)
1.5V, 4V
-
1.57nC @ 10V
6.6pF @ 10V
±10V
-
150mW (Ta)
7.8 Ohm @ 50mA, 4V
150°C (TJ)
Surface Mount
3-MCP
SC-70, SOT-323
hot NTB35N15T4G
ON Semiconductor

MOSFET N-CH 150V 37A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 37A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3200pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta), 178W (Tj)
  • Rds On (Max) @ Id, Vgs: 50 mOhm @ 18.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Azione435.936
MOSFET (Metal Oxide)
150V
37A (Ta)
10V
4V @ 250µA
100nC @ 10V
3200pF @ 25V
±20V
-
2W (Ta), 178W (Tj)
50 mOhm @ 18.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot NDF06N60ZG
ON Semiconductor

MOSFET N-CH 600V 7.1A TO-220FP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 7.1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1107pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 35W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FP
  • Package / Case: TO-220-3 Full Pack
pacchetto: TO-220-3 Full Pack
Azione67.452
MOSFET (Metal Oxide)
600V
7.1A (Tc)
10V
4.5V @ 100µA
47nC @ 10V
1107pF @ 25V
±30V
-
35W (Tc)
1.2 Ohm @ 3A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220FP
TO-220-3 Full Pack
ATP405-TL-H
ON Semiconductor

MOSFET N-CH 100V 40A ATPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 70W (Tc)
  • Rds On (Max) @ Id, Vgs: 33 mOhm @ 20A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: ATPAK
  • Package / Case: ATPAK (2 leads+tab)
pacchetto: ATPAK (2 leads+tab)
Azione49.920
MOSFET (Metal Oxide)
100V
40A (Ta)
10V
-
68nC @ 10V
4000pF @ 20V
±20V
-
70W (Tc)
33 mOhm @ 20A, 10V
150°C (TJ)
Surface Mount
ATPAK
ATPAK (2 leads+tab)
hot NTMFS4821NT1G
ON Semiconductor

MOSFET N-CH 30V 8.8A SO-8FL

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 58.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 12V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 870mW (Ta), 38.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.95 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN, 5 Leads
pacchetto: 8-PowerTDFN, 5 Leads
Azione143.436
MOSFET (Metal Oxide)
30V
8.8A (Ta), 58.5A (Tc)
4.5V, 10V
2.5V @ 250µA
16nC @ 4.5V
1400pF @ 12V
±20V
-
870mW (Ta), 38.5W (Tc)
6.95 mOhm @ 30A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN, 5 Leads
NDUL09N150CG
ON Semiconductor

MOSFET N-CH 1500V 9A TO3PF-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1500V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 114nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2025pF @ 30V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Ta), 78W (Tc)
  • Rds On (Max) @ Id, Vgs: 3 Ohm @ 3A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: -
  • Supplier Device Package: TO-3PF-3
  • Package / Case: TO-3P-3 Full Pack
pacchetto: TO-3P-3 Full Pack
Azione7.648
MOSFET (Metal Oxide)
1500V
9A (Ta)
10V
4V @ 1mA
114nC @ 10V
2025pF @ 30V
±30V
-
3W (Ta), 78W (Tc)
3 Ohm @ 3A, 10V
150°C (TJ)
-
TO-3PF-3
TO-3P-3 Full Pack
WPH4003-1E
ON Semiconductor

MOSFET N-CH 1700V 2.5A

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1700V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 30V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Ta), 55W (Tc)
  • Rds On (Max) @ Id, Vgs: 10.5 Ohm @ 1.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3PF
  • Package / Case: TO-3P-3 Full Pack
pacchetto: TO-3P-3 Full Pack
Azione6.516
MOSFET (Metal Oxide)
1700V
2.5A (Tc)
10V
-
48nC @ 10V
850pF @ 30V
±30V
-
3W (Ta), 55W (Tc)
10.5 Ohm @ 1.5A, 10V
150°C (TJ)
Through Hole
TO-3PF
TO-3P-3 Full Pack
NTB6410ANT4G
ON Semiconductor

MOSFET N-CH 100V 76A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 188W (Tc)
  • Rds On (Max) @ Id, Vgs: 13 mOhm @ 76A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Azione20.724
MOSFET (Metal Oxide)
100V
76A (Tc)
10V
4V @ 250µA
120nC @ 10V
4500pF @ 25V
±20V
-
188W (Tc)
13 mOhm @ 76A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot NDF04N60ZH
ON Semiconductor

MOSFET N-CH 600V 4.8A TO220FP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 2 Ohm @ 2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FP
  • Package / Case: TO-220-3 Full Pack
pacchetto: TO-220-3 Full Pack
Azione134.304
MOSFET (Metal Oxide)
600V
4.8A (Tc)
10V
4.5V @ 50µA
29nC @ 10V
640pF @ 25V
±30V
-
30W (Tc)
2 Ohm @ 2A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220FP
TO-220-3 Full Pack
hot NDD02N60Z-1G
ON Semiconductor

MOSFET N-CH 600V IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 10.1nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 274pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 57W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.8 Ohm @ 1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
pacchetto: TO-251-3 Short Leads, IPak, TO-251AA
Azione38.820
MOSFET (Metal Oxide)
600V
2.2A (Tc)
10V
4.5V @ 50µA
10.1nC @ 10V
274pF @ 25V
±30V
-
57W (Tc)
4.8 Ohm @ 1A, 10V
-55°C ~ 150°C (TJ)
Through Hole
I-Pak
TO-251-3 Short Leads, IPak, TO-251AA
NTMFS5C646NLT1G
ON Semiconductor

MOSFET N-CH 60V 32A SO-8FL

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 33.7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2164pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.7W (Ta), 79W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.7 mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN
pacchetto: 8-PowerTDFN
Azione12.378
MOSFET (Metal Oxide)
60V
19A (Ta)
4.5V, 10V
2V @ 250µA
33.7nC @ 10V
2164pF @ 25V
±20V
-
3.7W (Ta), 79W (Tc)
4.7 mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN
hot SFT1345-TL-H
ON Semiconductor

MOSFET P-CH 100V 11A TP-FA

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta), 35W (Tc)
  • Rds On (Max) @ Id, Vgs: 275 mOhm @ 5.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TP-FA
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
Azione3.888
MOSFET (Metal Oxide)
100V
11A (Ta)
4V, 10V
-
21nC @ 10V
1020pF @ 20V
±20V
-
1W (Ta), 35W (Tc)
275 mOhm @ 5.5A, 10V
150°C (TJ)
Surface Mount
TP-FA
TO-252-3, DPak (2 Leads + Tab), SC-63
hot NTD5862NT4G
ON Semiconductor

MOSFET N-CH 60V 98A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 98A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 82nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 115W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 45A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK-3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
Azione11.196
MOSFET (Metal Oxide)
60V
98A (Tc)
10V
4V @ 250µA
82nC @ 10V
6000pF @ 25V
±20V
-
115W (Tc)
5.7 mOhm @ 45A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
DPAK-3
TO-252-3, DPak (2 Leads + Tab), SC-63
hot NTD5802NT4G
ON Semiconductor

MOSFET N-CH 40V 16.4A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 16.4A (Ta), 101A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5025pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 93.75W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.4 mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
Azione143.952
MOSFET (Metal Oxide)
40V
16.4A (Ta), 101A (Tc)
5V, 10V
3.5V @ 250µA
100nC @ 10V
5025pF @ 25V
±20V
-
2.5W (Ta), 93.75W (Tc)
4.4 mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63
hot NTD110N02RT4G
ON Semiconductor

MOSFET N-CH 24V 12.5A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 24V
  • Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), 110A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 3440pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta), 110W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
Azione445.968
MOSFET (Metal Oxide)
24V
12.5A (Ta), 110A (Tc)
4.5V, 10V
2V @ 250µA
28nC @ 4.5V
3440pF @ 20V
±20V
-
1.5W (Ta), 110W (Tc)
4.6 mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63
hot NTD18N06LT4G
ON Semiconductor

MOSFET N-CH 60V 18A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 675pF @ 25V
  • Vgs (Max): ±15V
  • FET Feature: -
  • Power Dissipation (Max): 2.1W (Ta), 55W (Tj)
  • Rds On (Max) @ Id, Vgs: 65 mOhm @ 9A, 5V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
Azione379.308
MOSFET (Metal Oxide)
60V
18A (Ta)
5V
2V @ 250µA
22nC @ 5V
675pF @ 25V
±15V
-
2.1W (Ta), 55W (Tj)
65 mOhm @ 9A, 5V
-55°C ~ 175°C (TJ)
Surface Mount
DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63
hot NTTFS4824NTAG
ON Semiconductor

MOSFET N-CH 30V 8.3A 8WDFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta), 69A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 29nC @ 11.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2363pF @ 12V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 660mW (Ta), 46.3W (Tc)
  • Rds On (Max) @ Id, Vgs: 5 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-WDFN (3.3x3.3)
  • Package / Case: 8-PowerWDFN
pacchetto: 8-PowerWDFN
Azione14.928
MOSFET (Metal Oxide)
30V
8.3A (Ta), 69A (Tc)
4.5V, 11.5V
2.5V @ 250µA
29nC @ 11.5V
2363pF @ 12V
±20V
-
660mW (Ta), 46.3W (Tc)
5 mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-WDFN (3.3x3.3)
8-PowerWDFN
NTMFS5832NLT1G
ON Semiconductor

MOSFET N-CH 40V 110A SO-8FL

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 111A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.1W (Ta), 96W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN, 5 Leads
pacchetto: 8-PowerTDFN, 5 Leads
Azione35.448
MOSFET (Metal Oxide)
40V
20A (Ta), 111A (Tc)
4.5V, 10V
3V @ 250µA
51nC @ 10V
2700pF @ 25V
±20V
-
3.1W (Ta), 96W (Tc)
4.2 mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN, 5 Leads
hot NTD4904NT4G
ON Semiconductor

MOSFET N-CH 30V 13A SGL DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 79A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3052pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.4W (Ta), 52W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
Azione617.748
MOSFET (Metal Oxide)
30V
13A (Ta), 79A (Tc)
4.5V, 10V
2.2V @ 250µA
41nC @ 10V
3052pF @ 15V
±20V
-
1.4W (Ta), 52W (Tc)
3.7 mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63
hot NTMFS4841NT1G
ON Semiconductor

MOSFET N-CH 30V 8.3A SO-8FL

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta), 57A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1436pF @ 12V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 870mW (Ta), 41.7W (Tc)
  • Rds On (Max) @ Id, Vgs: 7 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN, 5 Leads
pacchetto: 8-PowerTDFN, 5 Leads
Azione104.880
MOSFET (Metal Oxide)
30V
8.3A (Ta), 57A (Tc)
4.5V, 10V
2.5V @ 250µA
17nC @ 4.5V
1436pF @ 12V
±20V
-
870mW (Ta), 41.7W (Tc)
7 mOhm @ 30A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN, 5 Leads
hot NTMFS4936NT1G
ON Semiconductor

MOSFET N-CH 30V 11.6A SO8FL

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta), 79A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3044pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 920mW (Ta), 43W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN, 5 Leads
pacchetto: 8-PowerTDFN, 5 Leads
Azione138.288
MOSFET (Metal Oxide)
30V
11.6A (Ta), 79A (Tc)
4.5V, 10V
2.2V @ 250µA
43nC @ 10V
3044pF @ 15V
±20V
-
920mW (Ta), 43W (Tc)
3.8 mOhm @ 30A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN, 5 Leads
hot NTMFS4939NT1G
ON Semiconductor

MOSFET N-CH 30V 9.3A SO8FL

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta), 53A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 28.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1954pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 920mW (Ta), 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN, 5 Leads
pacchetto: 8-PowerTDFN, 5 Leads
Azione101.832
MOSFET (Metal Oxide)
30V
9.3A (Ta), 53A (Tc)
4.5V, 10V
2.2V @ 250µA
28.5nC @ 10V
1954pF @ 15V
±20V
-
920mW (Ta), 30W (Tc)
5.5 mOhm @ 30A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN, 5 Leads
hot NTMFS4C05NT1G
ON Semiconductor

MOSFET N-CH 30V 11.9A SO8FL

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 11.9A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1972pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 770mW (Ta), 33W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN
pacchetto: 8-PowerTDFN
Azione164.160
MOSFET (Metal Oxide)
30V
11.9A (Ta)
4.5V, 10V
2.2V @ 250µA
14nC @ 4.5V
1972pF @ 15V
±20V
-
770mW (Ta), 33W (Tc)
3.4 mOhm @ 30A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN
hot NTMS4816NR2G
ON Semiconductor

MOSFET N-CH 30V 6.8A 8-SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 780mW (Ta)
  • Rds On (Max) @ Id, Vgs: 10 mOhm @ 9A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOIC
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione685.236
MOSFET (Metal Oxide)
30V
6.8A (Ta)
4.5V, 10V
3V @ 250µA
18.3nC @ 10V
1060pF @ 25V
±20V
-
780mW (Ta)
10 mOhm @ 9A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC
8-SOIC (0.154", 3.90mm Width)
hot NTD4858NT4G
ON Semiconductor

MOSFET N-CH 25V 11.2A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 11.2A (Ta), 73A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 19.2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1563pF @ 12V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.3W (Ta), 54.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.2 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
Azione2.757.084
MOSFET (Metal Oxide)
25V
11.2A (Ta), 73A (Tc)
4.5V, 10V
2.5V @ 250µA
19.2nC @ 4.5V
1563pF @ 12V
±20V
-
1.3W (Ta), 54.5W (Tc)
6.2 mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63
hot NTD4809NT4G
ON Semiconductor

MOSFET N-CH 30V 9.6A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 58A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 11.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1456pF @ 12V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.4W (Ta), 52W (Tc)
  • Rds On (Max) @ Id, Vgs: 9 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
Azione559.428
MOSFET (Metal Oxide)
30V
9.6A (Ta), 58A (Tc)
4.5V, 11.5V
2.5V @ 250µA
25nC @ 11.5V
1456pF @ 12V
±20V
-
1.4W (Ta), 52W (Tc)
9 mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63
hot NTHS5404T1G
ON Semiconductor

MOSFET N-CH 20V 5.2A CHIPFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 600mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 1.3W (Ta)
  • Rds On (Max) @ Id, Vgs: 30 mOhm @ 5.2A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: ChipFET?
  • Package / Case: 8-SMD, Flat Lead
pacchetto: 8-SMD, Flat Lead
Azione578.364
MOSFET (Metal Oxide)
20V
5.2A (Ta)
2.5V, 4.5V
600mV @ 250µA
18nC @ 4.5V
-
±12V
-
1.3W (Ta)
30 mOhm @ 5.2A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
ChipFET?
8-SMD, Flat Lead
hot NTD4909NT4G
ON Semiconductor

MOSFET N-CH 30V 8.8A SGL DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 41A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1314pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.37W (Ta), 29.4W (Tc)
  • Rds On (Max) @ Id, Vgs: 8 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
Azione827.556
MOSFET (Metal Oxide)
30V
8.8A (Ta), 41A (Tc)
4.5V, 10V
2.2V @ 250µA
17.5nC @ 10V
1314pF @ 15V
±20V
-
1.37W (Ta), 29.4W (Tc)
8 mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63
hot NTLJF3117PT1G
ON Semiconductor

MOSFET P-CH 20V 2.3A 6-WDFN

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 531pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: Schottky Diode (Isolated)
  • Power Dissipation (Max): 710mW (Ta)
  • Rds On (Max) @ Id, Vgs: 100 mOhm @ 2A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-WDFN (2x2)
  • Package / Case: 6-WDFN Exposed Pad
pacchetto: 6-WDFN Exposed Pad
Azione674.028
MOSFET (Metal Oxide)
20V
2.3A (Ta)
1.8V, 4.5V
1V @ 250µA
6.2nC @ 4.5V
531pF @ 10V
±8V
Schottky Diode (Isolated)
710mW (Ta)
100 mOhm @ 2A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
6-WDFN (2x2)
6-WDFN Exposed Pad
hot NTLJF4156NT1G
ON Semiconductor

MOSFET N-CH 30V 2.5A 6-WDFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 427pF @ 15V
  • Vgs (Max): ±8V
  • FET Feature: Schottky Diode (Isolated)
  • Power Dissipation (Max): 710mW (Ta)
  • Rds On (Max) @ Id, Vgs: 70 mOhm @ 2A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-WDFN (2x2)
  • Package / Case: 6-WDFN Exposed Pad
pacchetto: 6-WDFN Exposed Pad
Azione129.108
MOSFET (Metal Oxide)
30V
2.5A (Tj)
1.5V, 4.5V
1V @ 250µA
6.5nC @ 4.5V
427pF @ 15V
±8V
Schottky Diode (Isolated)
710mW (Ta)
70 mOhm @ 2A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
6-WDFN (2x2)
6-WDFN Exposed Pad