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Prodotti ON Semiconductor - Transistor - Unigiunzione programmabile

Record 11
Pagina 1/1
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
A magazzino
Quantità
Power Dissipation (Max)
Voltage - Output
Voltage - Offset (Vt)
Current - Gate to Anode Leakage (Igao)
Current - Valley (Iv)
Current - Peak
Package / Case
hot2N6028RLRPG
ON Semiconductor

THYRISTOR PROG UNIJUNCT 40V TO92

  • Voltage: 40V
  • Power Dissipation (Max): 300mW
  • Voltage - Output: 11V
  • Voltage - Offset (Vt): 600mV
  • Current - Gate to Anode Leakage (Igao): 10nA
  • Current - Valley (Iv): 25µA
  • Current - Peak: 150nA
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
A magazzino317
2N6028RLRMG
ON Semiconductor

THYRISTOR PROG UNIJUNCT 40V TO92

  • Voltage: 40V
  • Power Dissipation (Max): 300mW
  • Voltage - Output: 11V
  • Voltage - Offset (Vt): 600mV
  • Current - Gate to Anode Leakage (Igao): 10nA
  • Current - Valley (Iv): 25µA
  • Current - Peak: 150nA
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
A magazzino284
hot2N6027RL1G
ON Semiconductor

THYRISTOR PROG UNIJUNCT 40V TO92

  • Voltage: 40V
  • Power Dissipation (Max): 300mW
  • Voltage - Output: 11V
  • Voltage - Offset (Vt): 1.6V
  • Current - Gate to Anode Leakage (Igao): 10nA
  • Current - Valley (Iv): 50µA
  • Current - Peak: 2µA
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
A magazzino4.400
2N6028RLRP
ON Semiconductor

THYRISTOR PROG UNIJUNCT 40V TO92

  • Voltage: 40V
  • Power Dissipation (Max): 300mW
  • Voltage - Output: 11V
  • Voltage - Offset (Vt): 600mV
  • Current - Gate to Anode Leakage (Igao): 10nA
  • Current - Valley (Iv): 25µA
  • Current - Peak: 150nA
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
A magazzino473
hot2N6028G
ON Semiconductor

THYRISTOR PROG UNIJUNCT 40V TO92

  • Voltage: 40V
  • Power Dissipation (Max): 300mW
  • Voltage - Output: 11V
  • Voltage - Offset (Vt): 600mV
  • Current - Gate to Anode Leakage (Igao): 10nA
  • Current - Valley (Iv): 25µA
  • Current - Peak: 150nA
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
pacchetto: TO-226-3, TO-92-3 (TO-226AA)
A magazzino581
2N6027RL1
ON Semiconductor

THYRISTOR PROG UNIJUNCT 40V TO92

  • Voltage: 40V
  • Power Dissipation (Max): 300mW
  • Voltage - Output: 11V
  • Voltage - Offset (Vt): 1.6V
  • Current - Gate to Anode Leakage (Igao): 10nA
  • Current - Valley (Iv): 50µA
  • Current - Peak: 2µA
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
A magazzino320
hot2N6027G
ON Semiconductor

TRANS PROG UNIJUNCT 40V TO92

  • Voltage: 40V
  • Power Dissipation (Max): 300mW
  • Voltage - Output: 11V
  • Voltage - Offset (Vt): 1.6V
  • Current - Gate to Anode Leakage (Igao): 10nA
  • Current - Valley (Iv): 50µA
  • Current - Peak: 2µA
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
pacchetto: TO-226-3, TO-92-3 (TO-226AA)
A magazzino38.320
2N6028RLRAG
ON Semiconductor

THYRISTOR PROG UNIJUNCT 40V TO92

  • Voltage: 40V
  • Power Dissipation (Max): 300mW
  • Voltage - Output: 11V
  • Voltage - Offset (Vt): 600mV
  • Current - Gate to Anode Leakage (Igao): 10nA
  • Current - Valley (Iv): 25µA
  • Current - Peak: 150nA
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
A magazzino365
hot2N6027RLRAG
ON Semiconductor

THYRISTOR PROG UNIJUNCT 40V TO92

  • Voltage: 40V
  • Power Dissipation (Max): 300mW
  • Voltage - Output: 11V
  • Voltage - Offset (Vt): 1.6V
  • Current - Gate to Anode Leakage (Igao): 10nA
  • Current - Valley (Iv): 50µA
  • Current - Peak: 2µA
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
A magazzino3.476
2N6028RLRA
ON Semiconductor

THYRISTOR PROG UNIJUNCT 40V TO92

  • Voltage: 40V
  • Power Dissipation (Max): 300mW
  • Voltage - Output: 11V
  • Voltage - Offset (Vt): 600mV
  • Current - Gate to Anode Leakage (Igao): 10nA
  • Current - Valley (Iv): 25µA
  • Current - Peak: 150nA
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
A magazzino215
hot2N6027RLRA
ON Semiconductor

THYRISTOR PROG UNIJUNCT 40V TO92

  • Voltage: 40V
  • Power Dissipation (Max): 300mW
  • Voltage - Output: 11V
  • Voltage - Offset (Vt): 1.6V
  • Current - Gate to Anode Leakage (Igao): 10nA
  • Current - Valley (Iv): 50µA
  • Current - Peak: 2µA
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
A magazzino10.000