Prodotti Renesas Electronics America - Transistor - FET, MOSFET - Array | Heisener Electronics
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Prodotti Renesas Electronics America - Transistor - FET, MOSFET - Array

Record 15
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Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
RJM0603JSC-00#12
Renesas Electronics America

MOSFET 3N/3P-CH 60V 20A HSOP

  • FET Type: 3 N and 3 P-Channel (3-Phase Bridge)
  • FET Feature: Logic Level Gate, 4.5V Drive
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 20A
  • Rds On (Max) @ Id, Vgs: 20 mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 10V
  • Power - Max: 54W
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Package / Case: 20-SOIC (0.433", 11.00mm Width) Exposed Pad
  • Supplier Device Package: 20-HSOP
pacchetto: 20-SOIC (0.433", 11.00mm Width) Exposed Pad
Azione6.400
Logic Level Gate, 4.5V Drive
60V
20A
20 mOhm @ 10A, 10V
2.5V @ 1mA
43nC @ 10V
2600pF @ 10V
54W
175°C
Surface Mount
20-SOIC (0.433", 11.00mm Width) Exposed Pad
20-HSOP
RJM0603JSC-00#13
Renesas Electronics America

MOSFET 3N/3P-CH 60V 20A HSOP

  • FET Type: 3 N and 3 P-Channel (3-Phase Bridge)
  • FET Feature: Logic Level Gate, 4.5V Drive
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 20A
  • Rds On (Max) @ Id, Vgs: 20 mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 10V
  • Power - Max: 54W
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Package / Case: 20-SOIC (0.433", 11.00mm Width) Exposed Pad
  • Supplier Device Package: 20-HSOP
pacchetto: 20-SOIC (0.433", 11.00mm Width) Exposed Pad
Azione5.280
Logic Level Gate, 4.5V Drive
60V
20A
20 mOhm @ 10A, 10V
2.5V @ 1mA
43nC @ 10V
2600pF @ 10V
54W
175°C
Surface Mount
20-SOIC (0.433", 11.00mm Width) Exposed Pad
20-HSOP
UPA2385T1P-E1-A
Renesas Electronics America

MOSFET N-CH

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione3.328
-
-
-
-
-
-
-
-
-
-
-
-
UPA2373T1P-E4-A
Renesas Electronics America

MOSFET 2N-CH 24V

  • FET Type: 2 N-Channel (Dual) Common Drain
  • FET Feature: Logic Level Gate, 2.5V Drive
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.3W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-XFBGA
  • Supplier Device Package: 4-EFLIP-LGA (1.62x1.62)
pacchetto: 4-XFBGA
Azione6.368
Logic Level Gate, 2.5V Drive
-
-
-
-
22nC @ 4V
-
1.3W
-55°C ~ 150°C (TJ)
Surface Mount
4-XFBGA
4-EFLIP-LGA (1.62x1.62)
UPA1764G-E2-AZ
Renesas Electronics America

MOSFET 2N-CH 60V 7A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 7A
  • Rds On (Max) @ Id, Vgs: 35 mOhm @ 3.5A, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 10V
  • Power - Max: 2W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.173", 4.40mm Width)
  • Supplier Device Package: 8-SOP
pacchetto: 8-SOIC (0.173", 4.40mm Width)
Azione2.224
Standard
60V
7A
35 mOhm @ 3.5A, 10V
-
29nC @ 10V
1300pF @ 10V
2W
150°C (TJ)
Surface Mount
8-SOIC (0.173", 4.40mm Width)
8-SOP
RJM0306JSP-01#J0
Renesas Electronics America

MOSFET 2N/2P-CH 30V 3.5A 8-SOP

  • FET Type: 2 N and 2 P-Channel (H-Bridge)
  • FET Feature: Logic Level Gate, 4V Drive
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A
  • Rds On (Max) @ Id, Vgs: 65 mOhm @ 2A, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 10V
  • Power - Max: 2.2W
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione4.192
Logic Level Gate, 4V Drive
30V
3.5A
65 mOhm @ 2A, 10V
-
5nC @ 10V
290pF @ 10V
2.2W
-
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
UPA2672T1R-E2-AX
Renesas Electronics America

MOSFET 2P-CH 12V 4A 6HUSON

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate, 1.8V Drive
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 4A
  • Rds On (Max) @ Id, Vgs: 67 mOhm @ 2A, 4.5V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 486pF @ 10V
  • Power - Max: 2.3W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-WFDFN Exposed Pad
  • Supplier Device Package: 6-HUSON (2x2)
pacchetto: 6-WFDFN Exposed Pad
Azione7.648
Logic Level Gate, 1.8V Drive
12V
4A
67 mOhm @ 2A, 4.5V
-
5nC @ 4.5V
486pF @ 10V
2.3W
150°C (TJ)
Surface Mount
6-WFDFN Exposed Pad
6-HUSON (2x2)
UPA2670T1R-E2-AX
Renesas Electronics America

MOSFET 2P-CH 20V 3A 6HUSON

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate, 1.8V Drive
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3A
  • Rds On (Max) @ Id, Vgs: 79 mOhm @ 1.5A, 4.5V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 5.1nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 473pF @ 10V
  • Power - Max: 2.3W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-WFDFN Exposed Pad
  • Supplier Device Package: 6-HUSON (2x2)
pacchetto: 6-WFDFN Exposed Pad
Azione5.232
Logic Level Gate, 1.8V Drive
20V
3A
79 mOhm @ 1.5A, 4.5V
-
5.1nC @ 4.5V
473pF @ 10V
2.3W
150°C (TJ)
Surface Mount
6-WFDFN Exposed Pad
6-HUSON (2x2)
hot HAT2092R-EL-E
Renesas Electronics America

MOSFET 2N-CH 30V 11A 8-SOP

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 11A
  • Rds On (Max) @ Id, Vgs: 16 mOhm @ 5.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V
  • Power - Max: 3W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione4.367.508
Logic Level Gate
30V
11A
16 mOhm @ 5.5A, 10V
2.5V @ 1mA
22nC @ 10V
1400pF @ 10V
3W
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
hot HAT2038R-EL-E
Renesas Electronics America

MOSFET 2N-CH 60V 5A 8SOP

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 5A
  • Rds On (Max) @ Id, Vgs: 58 mOhm @ 3A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V
  • Power - Max: 3W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione18.768
Logic Level Gate
60V
5A
58 mOhm @ 3A, 10V
2.2V @ 1mA
-
520pF @ 10V
3W
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
hot UPA3753GR-E1-AT
Renesas Electronics America

MOSFET 2N-CH 60V 5A 8SOP

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 5A
  • Rds On (Max) @ Id, Vgs: 56 mOhm @ 2.5A, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 13.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 10V
  • Power - Max: 1.12W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerWDFN
  • Supplier Device Package: 8-SOP
pacchetto: 8-PowerWDFN
Azione393.648
Logic Level Gate
60V
5A
56 mOhm @ 2.5A, 10V
-
13.4nC @ 10V
640pF @ 10V
1.12W
150°C (TJ)
Surface Mount
8-PowerWDFN
8-SOP
UPA2690T1R-E2-AX
Renesas Electronics America

MOSFET N/P-CH 20V 4A/3A 6SON

  • FET Type: N and P-Channel Complementary
  • FET Feature: Logic Level Gate, 2.5V Drive
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4A, 3A
  • Rds On (Max) @ Id, Vgs: 42 mOhm @ 2A, 4.5V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 10V
  • Power - Max: 2.3W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-WFDFN Exposed Pad
  • Supplier Device Package: 6-HUSON (2x2)
pacchetto: 6-WFDFN Exposed Pad
Azione2.800
Logic Level Gate, 2.5V Drive
20V
4A, 3A
42 mOhm @ 2A, 4.5V
-
4.5nC @ 10V
330pF @ 10V
2.3W
150°C (TJ)
Surface Mount
6-WFDFN Exposed Pad
6-HUSON (2x2)
UPA2660T1R-E2-AX
Renesas Electronics America

MOSFET 2N-CH 20V 4A 6SON

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate, 2.5V Drive
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4A
  • Rds On (Max) @ Id, Vgs: 62 mOhm @ 2A, 4.5V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 10V
  • Power - Max: 2.3W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-WFDFN Exposed Pad
  • Supplier Device Package: 6-HUSON (2x2)
pacchetto: 6-WFDFN Exposed Pad
Azione6.928
Logic Level Gate, 2.5V Drive
20V
4A
62 mOhm @ 2A, 4.5V
-
4.5nC @ 10V
330pF @ 10V
2.3W
150°C (TJ)
Surface Mount
6-WFDFN Exposed Pad
6-HUSON (2x2)
UPA2375T1P-E1-A
Renesas Electronics America

MOSFET 2N-CH 24V

  • FET Type: 2 N-Channel (Dual) Common Drain
  • FET Feature: Logic Level Gate, 2.5V Drive
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.75W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-XFLGA
  • Supplier Device Package: 6-EFLIP-LGA
pacchetto: 6-XFLGA
Azione3.632
Logic Level Gate, 2.5V Drive
-
-
-
-
-
-
1.75W
150°C (TJ)
Surface Mount
6-XFLGA
6-EFLIP-LGA
UPA2379T1P-E1-A
Renesas Electronics America

MOSFET 2N-CH 12V

  • FET Type: 2 N-Channel (Dual) Common Drain
  • FET Feature: Logic Level Gate, 2.5V Drive
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.8W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-XFLGA
  • Supplier Device Package: 6-EFLIP-LGA (2.17x1.47)
pacchetto: 6-XFLGA
Azione45.894
Logic Level Gate, 2.5V Drive
-
-
-
-
20nC @ 4V
-
1.8W
150°C (TJ)
Surface Mount
6-XFLGA
6-EFLIP-LGA (2.17x1.47)