Prodotti Rohm Semiconductor - Transistor - IGBT - Singoli | Heisener Electronics
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Prodotti Rohm Semiconductor - Transistor - IGBT - Singoli

Record 18
Pagina  1/1
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
RGTH00TS65DGC11
Rohm Semiconductor

IGBT 650V 85A 277W TO-247N

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 85A
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
  • Power - Max: 277W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 94nC
  • Td (on/off) @ 25°C: 39ns/143ns
  • Test Condition: 400V, 50A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 54ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247N
pacchetto: TO-247-3
Azione6.552
650V
85A
200A
2.1V @ 15V, 50A
277W
-
Standard
94nC
39ns/143ns
400V, 50A, 10 Ohm, 15V
54ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247N
RGTH80TS65DGC11
Rohm Semiconductor

IGBT 650V 70A 234W TO-247N

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 70A
  • Current - Collector Pulsed (Icm): 160A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
  • Power - Max: 234W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 79nC
  • Td (on/off) @ 25°C: 34ns/120ns
  • Test Condition: 400V, 40A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 58ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247N
pacchetto: TO-247-3
Azione9.132
650V
70A
160A
2.1V @ 15V, 40A
234W
-
Standard
79nC
34ns/120ns
400V, 40A, 10 Ohm, 15V
58ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247N
RGT50TS65DGC11
Rohm Semiconductor

IGBT 650V 48A 174W TO-247N

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 48A
  • Current - Collector Pulsed (Icm): 75A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
  • Power - Max: 174W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 49nC
  • Td (on/off) @ 25°C: 27ns/88ns
  • Test Condition: 400V, 25A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 58ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247N
pacchetto: TO-247-3
Azione9.132
650V
48A
75A
2.1V @ 15V, 25A
174W
-
Standard
49nC
27ns/88ns
400V, 25A, 10 Ohm, 15V
58ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247N
RGTH50TS65DGC11
Rohm Semiconductor

IGBT 650V 50A 174W TO-247N

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 50A
  • Current - Collector Pulsed (Icm): 100A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
  • Power - Max: 174W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 49nC
  • Td (on/off) @ 25°C: 27ns/94ns
  • Test Condition: 400V, 25A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 58ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247N
pacchetto: TO-247-3
Azione11.088
650V
50A
100A
2.1V @ 15V, 25A
174W
-
Standard
49nC
27ns/94ns
400V, 25A, 10 Ohm, 15V
58ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247N
RGTH60TS65DGC11
Rohm Semiconductor

IGBT 650V 58A 194W TO-247N

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 58A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
  • Power - Max: 194W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 58nC
  • Td (on/off) @ 25°C: 27ns/105ns
  • Test Condition: 400V, 30A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 58ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247N
pacchetto: TO-247-3
Azione6.228
650V
58A
120A
2.1V @ 15V, 30A
194W
-
Standard
58nC
27ns/105ns
400V, 30A, 10 Ohm, 15V
58ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247N
RGTH60TS65GC11
Rohm Semiconductor

IGBT 650V 58A 197W TO-247N

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 58A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
  • Power - Max: 197W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 58nC
  • Td (on/off) @ 25°C: 27ns/105ns
  • Test Condition: 400V, 30A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247N
pacchetto: TO-247-3
Azione6.696
650V
58A
120A
2.1V @ 15V, 30A
197W
-
Standard
58nC
27ns/105ns
400V, 30A, 10 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247N
RGT40TS65DGC11
Rohm Semiconductor

IGBT 650V 40A 144W TO-247N

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 60A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
  • Power - Max: 144W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 40nC
  • Td (on/off) @ 25°C: 22ns/75ns
  • Test Condition: 400V, 20A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 58ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247N
pacchetto: TO-247-3
Azione9.312
650V
40A
60A
2.1V @ 15V, 20A
144W
-
Standard
40nC
22ns/75ns
400V, 20A, 10 Ohm, 15V
58ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247N
RGTH40TS65DGC11
Rohm Semiconductor

IGBT 650V 40A 144W TO-247N

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 80A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
  • Power - Max: 144W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 40nC
  • Td (on/off) @ 25°C: 22ns/73ns
  • Test Condition: 400V, 20A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 58ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247N
pacchetto: TO-247-3
Azione8.316
650V
40A
80A
2.1V @ 15V, 20A
144W
-
Standard
40nC
22ns/73ns
400V, 20A, 10 Ohm, 15V
58ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247N
hot RGT30NS65DGTL
Rohm Semiconductor

IGBT 650V 30A 133W TO-263S

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 30A
  • Current - Collector Pulsed (Icm): 45A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
  • Power - Max: 133W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 32nC
  • Td (on/off) @ 25°C: 18ns/64ns
  • Test Condition: 400V, 15A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 55ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: LPDS (TO-263S)
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Azione5.648
650V
30A
45A
2.1V @ 15V, 15A
133W
-
Standard
32nC
18ns/64ns
400V, 15A, 10 Ohm, 15V
55ns
-40°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
LPDS (TO-263S)
RGT16NS65DGTL
Rohm Semiconductor

IGBT 650V 16A 94W TO-263S

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 16A
  • Current - Collector Pulsed (Icm): 24A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A
  • Power - Max: 94W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 21nC
  • Td (on/off) @ 25°C: 13ns/33ns
  • Test Condition: 400V, 8A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 42ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: LPDS (TO-263S)
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Azione3.232
650V
16A
24A
2.1V @ 15V, 8A
94W
-
Standard
21nC
13ns/33ns
400V, 8A, 10 Ohm, 15V
42ns
-40°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
LPDS (TO-263S)
RGT8NS65DGTL
Rohm Semiconductor

IGBT 650V 8A 65W TO-263S

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 8A
  • Current - Collector Pulsed (Icm): 12A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A
  • Power - Max: 65W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 13.5nC
  • Td (on/off) @ 25°C: 17ns/69ns
  • Test Condition: 400V, 4A, 50 Ohm, 15V
  • Reverse Recovery Time (trr): 40ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: LPDS (TO-263S)
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Azione7.056
650V
8A
12A
2.1V @ 15V, 4A
65W
-
Standard
13.5nC
17ns/69ns
400V, 4A, 50 Ohm, 15V
40ns
-40°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
LPDS (TO-263S)
RGTH00TS65GC11
Rohm Semiconductor

IGBT 650V 85A 277W TO-247N

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 85A
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
  • Power - Max: 277W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 94nC
  • Td (on/off) @ 25°C: 39ns/143ns
  • Test Condition: 400V, 50A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247N
pacchetto: TO-247-3
Azione8.112
650V
85A
200A
2.1V @ 15V, 50A
277W
-
Standard
94nC
39ns/143ns
400V, 50A, 10 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247N
RGT80TS65DGC11
Rohm Semiconductor

IGBT 650V 70A 234W TO-247N

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 70A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
  • Power - Max: 234W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 79nC
  • Td (on/off) @ 25°C: 34ns/119ns
  • Test Condition: 400V, 40A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 58ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247N
pacchetto: TO-247-3
Azione7.272
650V
70A
120A
2.1V @ 15V, 40A
234W
-
Standard
79nC
34ns/119ns
400V, 40A, 10 Ohm, 15V
58ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247N
RGT60TS65DGC11
Rohm Semiconductor

IGBT 650V 55A 194W TO-247N

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 55A
  • Current - Collector Pulsed (Icm): 90A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
  • Power - Max: 194W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 58nC
  • Td (on/off) @ 25°C: 29ns/100ns
  • Test Condition: 400V, 30A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 58ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247N
pacchetto: TO-247-3
Azione6.936
650V
55A
90A
2.1V @ 15V, 30A
194W
-
Standard
58nC
29ns/100ns
400V, 30A, 10 Ohm, 15V
58ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247N
RGTH40TS65GC11
Rohm Semiconductor

IGBT 650V 40A 144W TO-247N

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 80A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
  • Power - Max: 144W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 40nC
  • Td (on/off) @ 25°C: 22ns/73ns
  • Test Condition: 400V, 20A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247N
pacchetto: TO-247-3
Azione7.200
650V
40A
80A
2.1V @ 15V, 20A
144W
-
Standard
40nC
22ns/73ns
400V, 20A, 10 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247N
RGTH50TS65GC11
Rohm Semiconductor

IGBT 650V 50A 174W TO-247N

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 50A
  • Current - Collector Pulsed (Icm): 100A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
  • Power - Max: 174W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 49nC
  • Td (on/off) @ 25°C: 27ns/94ns
  • Test Condition: 400V, 25A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247N
pacchetto: TO-247-3
Azione7.176
650V
50A
100A
2.1V @ 15V, 25A
174W
-
Standard
49nC
27ns/94ns
400V, 25A, 10 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247N
RGT40NS65DGTL
Rohm Semiconductor

IGBT 650V 40A 161W TO-263S

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 60A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
  • Power - Max: 161W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 40nC
  • Td (on/off) @ 25°C: 22ns/75ns
  • Test Condition: 400V, 20A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 58ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: LPDS (TO-263S)
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Azione14.184
650V
40A
60A
2.1V @ 15V, 20A
161W
-
Standard
40nC
22ns/75ns
400V, 20A, 10 Ohm, 15V
58ns
-40°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
LPDS (TO-263S)
RGT8BM65DTL
Rohm Semiconductor

IGBT 650V 8A 62W TO-252

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 8A
  • Current - Collector Pulsed (Icm): 12A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A
  • Power - Max: 62W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 13.5nC
  • Td (on/off) @ 25°C: 17ns/69ns
  • Test Condition: 400V, 4A, 50 Ohm, 15V
  • Reverse Recovery Time (trr): 40ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
Azione5.248
650V
8A
12A
2.1V @ 15V, 4A
62W
-
Standard
13.5nC
17ns/69ns
400V, 4A, 50 Ohm, 15V
40ns
-40°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252