Pagina 9 - Prodotti Diodes Incorporated - Transistor - FET, MOSFET - Array

Numero di parte	Produttore	Descrizione	pacchetto	Azione	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
DMN3401LVQ-13	Diodes Incorporated	MOSFET 2N-CH 30V 0.8A SOT563 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 800mA (Ta) Rds On (Max) @ Id, Vgs: 400mOhm @ 590mA, 10V Vgs(th) (Max) @ Id: 1.6V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V Power - Max: 490mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	pacchetto: -	Azione113.010	-	30V	800mA (Ta)	400mOhm @ 590mA, 10V	1.6V @ 100µA	1.2nC @ 10V	50pF @ 15V	490mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
DMN3022LFG-7	Diodes Incorporated	MOSFET 2N-CH 30V 7.6A PWRDI3333 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta), 15A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 10A, 5V, 8mOhm @ 10A, 5V Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 4.5V, 8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 481pF @ 15V, 996pF @ 15V Power - Max: 1.96W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerLDFN Supplier Device Package: PowerDI3333-8 (Type D)	pacchetto: -	Request a Quote	-	30V	7.6A (Ta), 15A (Tc)	22mOhm @ 10A, 5V, 8mOhm @ 10A, 5V	2.1V @ 250µA, 1.2V @ 250µA	3.7nC @ 4.5V, 8nC @ 4.5V	481pF @ 15V, 996pF @ 15V	1.96W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerLDFN	PowerDI3333-8 (Type D)
DMN3401LDWQ-13	Diodes Incorporated	MOSFET 2N-CH 30V 0.8A SOT363 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 800mA (Ta) Rds On (Max) @ Id, Vgs: 400mOhm @ 590mA, 10V Vgs(th) (Max) @ Id: 1.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V Power - Max: 290mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	pacchetto: -	Request a Quote	-	30V	800mA (Ta)	400mOhm @ 590mA, 10V	1.6V @ 250µA	1.2nC @ 10V	50pF @ 15V	290mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
DMT47M2LDVQ-7	Diodes Incorporated	MOSFET 2N-CH 40V 11.9A PWRDI3333 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 11.9A (Ta), 30.2A (Tc) Rds On (Max) @ Id, Vgs: 10.8mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 891pF @ 20V Power - Max: 2.34W (Ta), 14.8W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PowerDI3333-8 (Type UXC)	pacchetto: -	Azione4.830	-	40V	11.9A (Ta), 30.2A (Tc)	10.8mOhm @ 20A, 10V	2.3V @ 250µA	14nC @ 10V	891pF @ 20V	2.34W (Ta), 14.8W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	PowerDI3333-8 (Type UXC)
DMTH10H038SPDWQ-13	Diodes Incorporated	MOSFET 2N-CH 100V 25A POWERDI50 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 33mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 544pF @ 50V Power - Max: 2.7W (Ta), 39W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: PowerDI5060-8 (Type UXD)	pacchetto: -	Request a Quote	-	100V	25A (Tc)	33mOhm @ 10A, 10V	4V @ 250µA	8nC @ 10V	544pF @ 50V	2.7W (Ta), 39W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	PowerDI5060-8 (Type UXD)
DMC62D2SV-13	Diodes Incorporated	MOSFET N/P-CH 60V 0.48A SOT563 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 480mA (Ta), 320mA (Ta) Rds On (Max) @ Id, Vgs: 1.7Ohm @ 200mA, 10V, 4Ohm @ 200mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA, 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.04nC @ 10V, 1.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 30V, 40pF @ 25V Power - Max: 500mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	pacchetto: -	Request a Quote	-	60V	480mA (Ta), 320mA (Ta)	1.7Ohm @ 200mA, 10V, 4Ohm @ 200mA, 10V	2.5V @ 250µA, 3V @ 250µA	1.04nC @ 10V, 1.1nC @ 10V	41pF @ 30V, 40pF @ 25V	500mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
DMTH4014LPDWQ-13	Diodes Incorporated	MOSFET BVDSS: 31V~40V POWERDI506 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 43.6A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 733pF @ 20V Power - Max: 2.4W (Ta), 42.8W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: PowerDI5060-8 (SWP)	pacchetto: -	Request a Quote	-	40V	10.6A (Ta), 43.6A (Tc)	15mOhm @ 20A, 10V	3V @ 250µA	10.2nC @ 10V	733pF @ 20V	2.4W (Ta), 42.8W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	PowerDI5060-8 (SWP)
DMC2053UVT-7	Diodes Incorporated	MOSFET N/P-CH 20V 4.6A TSOT26 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 3.2A (Ta) Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 4.5V, 74mOhm @ 3.5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V, 5.9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 369pF @ 10V, 440pF @ 10V Power - Max: 700mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSOT-26	pacchetto: -	Azione9.639	-	20V	4.6A (Ta), 3.2A (Ta)	35mOhm @ 5A, 4.5V, 74mOhm @ 3.5A, 4.5V	1V @ 250µA	3.6nC @ 4.5V, 5.9nC @ 4.5V	369pF @ 10V, 440pF @ 10V	700mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	TSOT-26
DMC2025UFDB-7	Diodes Incorporated	MOSFET N/P-CH 20V 6A/3.5A 6UDFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 3.5A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 4.5V, 75mOhm @ 2.9A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA, 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V, 15nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 486pF @ 10V, 642pF @ 10V Power - Max: 700mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: U-DFN2020-6 (Type B)	pacchetto: -	Azione4.536	-	20V	6A (Ta), 3.5A (Ta)	25mOhm @ 4A, 4.5V, 75mOhm @ 2.9A, 4.5V	1V @ 250µA, 1.4V @ 250µA	12.3nC @ 10V, 15nC @ 8V	486pF @ 10V, 642pF @ 10V	700mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN Exposed Pad	U-DFN2020-6 (Type B)
DMC31D5UDAQ-7B	Diodes Incorporated	MOSFET N/P-CH 30V 0.4A 6DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 400mA (Ta), 220mA (Ta) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V, 5Ohm @ 100mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.38nC @ 4.5V, 0.35nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 22.6pF @ 15V, 21.8pF @ 15V Power - Max: 370mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, No Lead Supplier Device Package: X2-DFN0806-6	pacchetto: -	Request a Quote	-	30V	400mA (Ta), 220mA (Ta)	1.5Ohm @ 100mA, 4.5V, 5Ohm @ 100mA, 4.5V	1V @ 250µA	0.38nC @ 4.5V, 0.35nC @ 4.5V	22.6pF @ 15V, 21.8pF @ 15V	370mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-SMD, No Lead	X2-DFN0806-6
DMC3732UVTQ-7	Diodes Incorporated	MOSFET BVDSS: 25V~30V TSOT26 T&R FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta), 700mA (Ta) Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V, 1Ohm @ 400mA, 4.5V Vgs(th) (Max) @ Id: 0.95V @ 250µA, 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V, 1.6nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 40.8pF @ 25V, 54pF @ 15V Power - Max: 540mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSOT-26	pacchetto: -	Request a Quote	-	30V	1.1A (Ta), 700mA (Ta)	460mOhm @ 200mA, 4.5V, 1Ohm @ 400mA, 4.5V	0.95V @ 250µA, 1.1V @ 250µA	0.9nC @ 4.5V, 1.6nC @ 8V	40.8pF @ 25V, 54pF @ 15V	540mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	TSOT-26
DMC6022SSD-13	Diodes Incorporated	MOSFET N/P-CH 60V 6A/5A 8SO FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 5A (Ta) Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V, 50mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V, 30.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2110pF @ 30V, 1525pF @ 30V Power - Max: 1.5W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	pacchetto: -	Azione9.249	-	60V	6A (Ta), 5A (Ta)	29mOhm @ 5A, 10V, 50mOhm @ 5A, 10V	3V @ 250µA	32nC @ 10V, 30.6nC @ 10V	2110pF @ 30V, 1525pF @ 30V	1.5W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
DMC2053UVTQ-7	Diodes Incorporated	MOSFET N/P-CH 20V 4.6A TSOT26 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 3.2A (Ta) Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 4.5V, 74mOhm @ 3.5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V, 5.9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 369pF @ 10V, 440pF @ 10V Power - Max: 700mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSOT-26	pacchetto: -	Azione17.631	-	20V	4.6A (Ta), 3.2A (Ta)	35mOhm @ 5A, 4.5V, 74mOhm @ 3.5A, 4.5V	1V @ 250µA	3.6nC @ 4.5V, 5.9nC @ 4.5V	369pF @ 10V, 440pF @ 10V	700mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	TSOT-26
DMN3401LV-7	Diodes Incorporated	MOSFET BVDSS: 25V~30V SOT563 T&R FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 800mA (Ta) Rds On (Max) @ Id, Vgs: 400mOhm @ 590mA, 10V Vgs(th) (Max) @ Id: 1.6V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V Power - Max: 490mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	pacchetto: -	Request a Quote	-	30V	800mA (Ta)	400mOhm @ 590mA, 10V	1.6V @ 100µA	1.2nC @ 10V	50pF @ 15V	490mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
DMP32D9UDA-7B	Diodes Incorporated	MOSFET 2P-CH 0.22A 6DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: 220mA (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 100mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, No Lead Supplier Device Package: X2-DFN0806-6	pacchetto: -	Request a Quote	-	-	220mA (Ta)	5Ohm @ 100mA, 4.5V	1V @ 250µA	-	-	-	-55°C ~ 150°C (TJ)	Surface Mount	6-SMD, No Lead	X2-DFN0806-6
DMNH4011SPSWQ-13	Diodes Incorporated	MOSFET BVDSS: 31V~40V POWERDI506 FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	pacchetto: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
DMTH6016LPDQ-13	Diodes Incorporated	MOSFET 2N-CH 60V 9.2A PWRDI50 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 33.2A (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 864pF @ 30V Power - Max: 2.5W (Ta), 37.5W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: PowerDI5060-8	pacchetto: -	Azione231	-	60V	9.2A (Ta), 33.2A (Tc)	19mOhm @ 10A, 10V	2.5V @ 250µA	17nC @ 10V	864pF @ 30V	2.5W (Ta), 37.5W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	PowerDI5060-8
DMN6066SSDQ-13	Diodes Incorporated	MOSFET 2N-CH 60V 3.3A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta) Rds On (Max) @ Id, Vgs: 66mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 502pF @ 30V Power - Max: 1.25W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	pacchetto: -	Request a Quote	-	60V	3.3A (Ta)	66mOhm @ 4.5A, 10V	3V @ 250µA	10.3nC @ 10V	502pF @ 30V	1.25W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
DMT3022UEV-13	Diodes Incorporated	MOSFET 2N-CH 30V 17A POWERDI3333 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 1.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 903pF @ 15V Power - Max: 900mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PowerDI3333-8 (Type UXD)	pacchetto: -	Request a Quote	-	30V	17A (Tc)	22mOhm @ 11A, 10V	1.8V @ 250µA	13.9nC @ 10V	903pF @ 15V	900mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	PowerDI3333-8 (Type UXD)
DMC2400UV	Diodes Incorporated	MOSFET N/P-CH 20V 1.03A SOT563 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.03A (Ta), 700mA (Ta) Rds On (Max) @ Id, Vgs: 480mOhm @ 200mA, 5V, 970mOhm @ 100mA, 5V Vgs(th) (Max) @ Id: 900mV @ 250µA, 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V, 0.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 37.1pF @ 10V, 46.1pF @ 10V Power - Max: 450mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	pacchetto: -	Request a Quote	-	20V	1.03A (Ta), 700mA (Ta)	480mOhm @ 200mA, 5V, 970mOhm @ 100mA, 5V	900mV @ 250µA, 1V @ 250µA	0.5nC @ 4.5V, 0.8nC @ 10V	37.1pF @ 10V, 46.1pF @ 10V	450mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
DMP2900UDW-7	Diodes Incorporated	MOSFET 2P-CH 20V 0.63A SOT363 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 630mA (Ta) Rds On (Max) @ Id, Vgs: 750mOhm @ 430mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 49pF @ 16V Power - Max: 370mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	pacchetto: -	Azione7.287	-	20V	630mA (Ta)	750mOhm @ 430mA, 4.5V	1V @ 250µA	0.7nC @ 4.5V	49pF @ 16V	370mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
DMTH6015LPDW-13	Diodes Incorporated	MOSFET 2N-CH 60V 9.4A PWRDI50 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 36.3A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 825pF @ 30V Power - Max: 2.6W (Ta), 39.5W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: PowerDI5060-8 (Type UXD)	pacchetto: -	Request a Quote	-	60V	9.4A (Ta), 36.3A (Tc)	20mOhm @ 10A, 10V	2.5V @ 250µA	14.3nC @ 10V	825pF @ 30V	2.6W (Ta), 39.5W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	PowerDI5060-8 (Type UXD)
DMP2110UFDB-7	Diodes Incorporated	MOSFET 2P-CH 20V 3.2A 6UDFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Rds On (Max) @ Id, Vgs: 75mOhm @ 2.8A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12.7nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 443pF @ 10V Power - Max: 820mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: U-DFN2020-6 (Type B)	pacchetto: -	Request a Quote	-	20V	3.2A (Ta)	75mOhm @ 2.8A, 4.5V	1V @ 250µA	12.7nC @ 8V	443pF @ 10V	820mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN Exposed Pad	U-DFN2020-6 (Type B)
DMP22D5UDJ-7A	Diodes Incorporated	MOSFET 2P-CH 20V 0.36A SOT963 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 360mA (Ta) Rds On (Max) @ Id, Vgs: 1.9Ohm @ 100mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 15V Power - Max: 380mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-963 Supplier Device Package: SOT-963	pacchetto: -	Request a Quote	-	20V	360mA (Ta)	1.9Ohm @ 100mA, 4.5V	1V @ 250µA	0.3nC @ 4.5V	17pF @ 15V	380mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-963	SOT-963
DMN3012LEG-13	Diodes Incorporated	MOSFET 2N-CH 30V 10A PWRDI3333 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 20A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 15A, 5V, 6mOhm @ 15A, 5V Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.15V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 4.5V, 12.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 15V, 1480pF @ 15V Power - Max: 2.2W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerLDFN Supplier Device Package: PowerDI3333-8 (Type D)	pacchetto: -	Request a Quote	-	30V	10A (Ta), 20A (Tc)	12mOhm @ 15A, 5V, 6mOhm @ 15A, 5V	2.1V @ 250µA, 1.15V @ 250µA	6.1nC @ 4.5V, 12.6nC @ 4.5V	850pF @ 15V, 1480pF @ 15V	2.2W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerLDFN	PowerDI3333-8 (Type D)
DMN3032LFDBWQ-7	Diodes Incorporated	MOSFET 2N-CH 30V 5.5A 6UDFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 5.8A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V Power - Max: 820mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: U-DFN2020-6 (SWP) Type B	pacchetto: -	Request a Quote	-	30V	5.5A (Ta)	30mOhm @ 5.8A, 10V	2V @ 250µA	10.6nC @ 10V	500pF @ 15V	820mW	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN Exposed Pad	U-DFN2020-6 (SWP) Type B
BSS84V-7-79	Diodes Incorporated	MOSFET 2P-CH 50V 0.13A SOT563 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 130mA (Ta) Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 25V Power - Max: 150mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	pacchetto: -	Request a Quote	-	50V	130mA (Ta)	10Ohm @ 100mA, 5V	2V @ 1mA	-	45pF @ 25V	150mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
DMC2991UDR4-7	Diodes Incorporated	MOSFET N/P-CH 20V 0.5A 6DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), 360mA (Ta) Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V, 1.9Ohm @ 100mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.28nC @ 4.5V, 0.3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 14.6pF @ 16V, 17pF @ 16V Power - Max: 370mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-XFDFN Exposed Pad Supplier Device Package: X2-DFN1010-6 (Type UXC)	pacchetto: -	Azione14.460	-	20V	500mA (Ta), 360mA (Ta)	990mOhm @ 100mA, 4.5V, 1.9Ohm @ 100mA, 4.5V	1V @ 250µA	0.28nC @ 4.5V, 0.3nC @ 4.5V	14.6pF @ 16V, 17pF @ 16V	370mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-XFDFN Exposed Pad	X2-DFN1010-6 (Type UXC)

DMN3401LVQ-13

Diodes Incorporated

MOSFET 2N-CH 30V 0.8A SOT563

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 590mA, 10V
Vgs(th) (Max) @ Id: 1.6V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V
Power - Max: 490mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

pacchetto: -

Azione113.010

-

30V

800mA (Ta)

400mOhm @ 590mA, 10V

1.6V @ 100µA

1.2nC @ 10V

50pF @ 15V

490mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

DMN3022LFG-7

Diodes Incorporated

MOSFET 2N-CH 30V 7.6A PWRDI3333

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta), 15A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 10A, 5V, 8mOhm @ 10A, 5V
Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 4.5V, 8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 481pF @ 15V, 996pF @ 15V
Power - Max: 1.96W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerLDFN
Supplier Device Package: PowerDI3333-8 (Type D)

pacchetto: -

Request a Quote

-

30V

7.6A (Ta), 15A (Tc)

22mOhm @ 10A, 5V, 8mOhm @ 10A, 5V

2.1V @ 250µA, 1.2V @ 250µA

3.7nC @ 4.5V, 8nC @ 4.5V

481pF @ 15V, 996pF @ 15V

1.96W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerLDFN

PowerDI3333-8 (Type D)

DMN3401LDWQ-13

Diodes Incorporated

MOSFET 2N-CH 30V 0.8A SOT363

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 590mA, 10V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V
Power - Max: 290mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

pacchetto: -

Request a Quote

-

30V

800mA (Ta)

400mOhm @ 590mA, 10V

1.6V @ 250µA

1.2nC @ 10V

50pF @ 15V

290mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

DMT47M2LDVQ-7

Diodes Incorporated

MOSFET 2N-CH 40V 11.9A PWRDI3333

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 11.9A (Ta), 30.2A (Tc)
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 891pF @ 20V
Power - Max: 2.34W (Ta), 14.8W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PowerDI3333-8 (Type UXC)

pacchetto: -

Azione4.830

-

40V

11.9A (Ta), 30.2A (Tc)

10.8mOhm @ 20A, 10V

2.3V @ 250µA

14nC @ 10V

891pF @ 20V

2.34W (Ta), 14.8W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerVDFN

PowerDI3333-8 (Type UXC)

DMTH10H038SPDWQ-13

Diodes Incorporated

MOSFET 2N-CH 100V 25A POWERDI50

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 544pF @ 50V
Power - Max: 2.7W (Ta), 39W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: PowerDI5060-8 (Type UXD)

pacchetto: -

Request a Quote

-

100V

25A (Tc)

33mOhm @ 10A, 10V

4V @ 250µA

8nC @ 10V

544pF @ 50V

2.7W (Ta), 39W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerTDFN

PowerDI5060-8 (Type UXD)

DMC62D2SV-13

Diodes Incorporated

MOSFET N/P-CH 60V 0.48A SOT563

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 480mA (Ta), 320mA (Ta)
Rds On (Max) @ Id, Vgs: 1.7Ohm @ 200mA, 10V, 4Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA, 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.04nC @ 10V, 1.1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 30V, 40pF @ 25V
Power - Max: 500mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

pacchetto: -

Request a Quote

-

60V

480mA (Ta), 320mA (Ta)

1.7Ohm @ 200mA, 10V, 4Ohm @ 200mA, 10V

2.5V @ 250µA, 3V @ 250µA

1.04nC @ 10V, 1.1nC @ 10V

41pF @ 30V, 40pF @ 25V

500mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

DMTH4014LPDWQ-13

Diodes Incorporated

MOSFET BVDSS: 31V~40V POWERDI506

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 43.6A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 733pF @ 20V
Power - Max: 2.4W (Ta), 42.8W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: PowerDI5060-8 (SWP)

pacchetto: -

Request a Quote

-

40V

10.6A (Ta), 43.6A (Tc)

15mOhm @ 20A, 10V

3V @ 250µA

10.2nC @ 10V

733pF @ 20V

2.4W (Ta), 42.8W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerTDFN

PowerDI5060-8 (SWP)

DMC2053UVT-7

Diodes Incorporated

MOSFET N/P-CH 20V 4.6A TSOT26

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 4.5V, 74mOhm @ 3.5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V, 5.9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 369pF @ 10V, 440pF @ 10V
Power - Max: 700mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: TSOT-26

pacchetto: -

Azione9.639

-

20V

4.6A (Ta), 3.2A (Ta)

35mOhm @ 5A, 4.5V, 74mOhm @ 3.5A, 4.5V

1V @ 250µA

3.6nC @ 4.5V, 5.9nC @ 4.5V

369pF @ 10V, 440pF @ 10V

700mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

TSOT-26

DMC2025UFDB-7

Diodes Incorporated

MOSFET N/P-CH 20V 6A/3.5A 6UDFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 4.5V, 75mOhm @ 2.9A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA, 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V, 15nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 486pF @ 10V, 642pF @ 10V
Power - Max: 700mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: U-DFN2020-6 (Type B)

pacchetto: -

Azione4.536

-

20V

6A (Ta), 3.5A (Ta)

25mOhm @ 4A, 4.5V, 75mOhm @ 2.9A, 4.5V

1V @ 250µA, 1.4V @ 250µA

12.3nC @ 10V, 15nC @ 8V

486pF @ 10V, 642pF @ 10V

700mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-UDFN Exposed Pad

U-DFN2020-6 (Type B)

DMC31D5UDAQ-7B

Diodes Incorporated

MOSFET N/P-CH 30V 0.4A 6DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta), 220mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V, 5Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.38nC @ 4.5V, 0.35nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 22.6pF @ 15V, 21.8pF @ 15V
Power - Max: 370mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, No Lead
Supplier Device Package: X2-DFN0806-6

pacchetto: -

Request a Quote

-

30V

400mA (Ta), 220mA (Ta)

1.5Ohm @ 100mA, 4.5V, 5Ohm @ 100mA, 4.5V

1V @ 250µA

0.38nC @ 4.5V, 0.35nC @ 4.5V

22.6pF @ 15V, 21.8pF @ 15V

370mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-SMD, No Lead

X2-DFN0806-6

DMC3732UVTQ-7

Diodes Incorporated

MOSFET BVDSS: 25V~30V TSOT26 T&R

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta), 700mA (Ta)
Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V, 1Ohm @ 400mA, 4.5V
Vgs(th) (Max) @ Id: 0.95V @ 250µA, 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V, 1.6nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 40.8pF @ 25V, 54pF @ 15V
Power - Max: 540mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: TSOT-26

pacchetto: -

Request a Quote

-

30V

1.1A (Ta), 700mA (Ta)

460mOhm @ 200mA, 4.5V, 1Ohm @ 400mA, 4.5V

0.95V @ 250µA, 1.1V @ 250µA

0.9nC @ 4.5V, 1.6nC @ 8V

40.8pF @ 25V, 54pF @ 15V

540mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

TSOT-26

DMC6022SSD-13

Diodes Incorporated

MOSFET N/P-CH 60V 6A/5A 8SO

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 5A (Ta)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V, 50mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V, 30.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2110pF @ 30V, 1525pF @ 30V
Power - Max: 1.5W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

pacchetto: -

Azione9.249

-

60V

6A (Ta), 5A (Ta)

29mOhm @ 5A, 10V, 50mOhm @ 5A, 10V

3V @ 250µA

32nC @ 10V, 30.6nC @ 10V

2110pF @ 30V, 1525pF @ 30V

1.5W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

DMC2053UVTQ-7

Diodes Incorporated

MOSFET N/P-CH 20V 4.6A TSOT26

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 4.5V, 74mOhm @ 3.5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V, 5.9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 369pF @ 10V, 440pF @ 10V
Power - Max: 700mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: TSOT-26

pacchetto: -

Azione17.631

-

20V

4.6A (Ta), 3.2A (Ta)

35mOhm @ 5A, 4.5V, 74mOhm @ 3.5A, 4.5V

1V @ 250µA

3.6nC @ 4.5V, 5.9nC @ 4.5V

369pF @ 10V, 440pF @ 10V

700mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

TSOT-26

DMN3401LV-7

Diodes Incorporated

MOSFET BVDSS: 25V~30V SOT563 T&R

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 590mA, 10V
Vgs(th) (Max) @ Id: 1.6V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V
Power - Max: 490mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

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30V

800mA (Ta)

400mOhm @ 590mA, 10V

1.6V @ 100µA

1.2nC @ 10V

50pF @ 15V

490mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

DMP32D9UDA-7B

Diodes Incorporated

MOSFET 2P-CH 0.22A 6DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: 220mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, No Lead
Supplier Device Package: X2-DFN0806-6

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-

220mA (Ta)

5Ohm @ 100mA, 4.5V

1V @ 250µA

-

-55°C ~ 150°C (TJ)

Surface Mount

6-SMD, No Lead

X2-DFN0806-6

DMNH4011SPSWQ-13

Diodes Incorporated

MOSFET BVDSS: 31V~40V POWERDI506

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

pacchetto: -

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-

DMTH6016LPDQ-13

Diodes Incorporated

MOSFET 2N-CH 60V 9.2A PWRDI50

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 33.2A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 864pF @ 30V
Power - Max: 2.5W (Ta), 37.5W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: PowerDI5060-8

pacchetto: -

Azione231

-

60V

9.2A (Ta), 33.2A (Tc)

19mOhm @ 10A, 10V

2.5V @ 250µA

17nC @ 10V

864pF @ 30V

2.5W (Ta), 37.5W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerTDFN

PowerDI5060-8

DMN6066SSDQ-13

Diodes Incorporated

MOSFET 2N-CH 60V 3.3A 8SOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
Rds On (Max) @ Id, Vgs: 66mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 502pF @ 30V
Power - Max: 1.25W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

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60V

3.3A (Ta)

66mOhm @ 4.5A, 10V

3V @ 250µA

10.3nC @ 10V

502pF @ 30V

1.25W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

DMT3022UEV-13

Diodes Incorporated

MOSFET 2N-CH 30V 17A POWERDI3333

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 11A, 10V
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 903pF @ 15V
Power - Max: 900mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PowerDI3333-8 (Type UXD)

pacchetto: -

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30V

17A (Tc)

22mOhm @ 11A, 10V

1.8V @ 250µA

13.9nC @ 10V

903pF @ 15V

900mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerVDFN

PowerDI3333-8 (Type UXD)

DMC2400UV

Diodes Incorporated

MOSFET N/P-CH 20V 1.03A SOT563

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.03A (Ta), 700mA (Ta)
Rds On (Max) @ Id, Vgs: 480mOhm @ 200mA, 5V, 970mOhm @ 100mA, 5V
Vgs(th) (Max) @ Id: 900mV @ 250µA, 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V, 0.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 37.1pF @ 10V, 46.1pF @ 10V
Power - Max: 450mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

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20V

1.03A (Ta), 700mA (Ta)

480mOhm @ 200mA, 5V, 970mOhm @ 100mA, 5V

900mV @ 250µA, 1V @ 250µA

0.5nC @ 4.5V, 0.8nC @ 10V

37.1pF @ 10V, 46.1pF @ 10V

450mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

DMP2900UDW-7

Diodes Incorporated

MOSFET 2P-CH 20V 0.63A SOT363

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 630mA (Ta)
Rds On (Max) @ Id, Vgs: 750mOhm @ 430mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 49pF @ 16V
Power - Max: 370mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

pacchetto: -

Azione7.287

-

20V

630mA (Ta)

750mOhm @ 430mA, 4.5V

1V @ 250µA

0.7nC @ 4.5V

49pF @ 16V

370mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

DMTH6015LPDW-13

Diodes Incorporated

MOSFET 2N-CH 60V 9.4A PWRDI50

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 36.3A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 825pF @ 30V
Power - Max: 2.6W (Ta), 39.5W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: PowerDI5060-8 (Type UXD)

pacchetto: -

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60V

9.4A (Ta), 36.3A (Tc)

20mOhm @ 10A, 10V

2.5V @ 250µA

14.3nC @ 10V

825pF @ 30V

2.6W (Ta), 39.5W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerTDFN

PowerDI5060-8 (Type UXD)

DMP2110UFDB-7

Diodes Incorporated

MOSFET 2P-CH 20V 3.2A 6UDFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 2.8A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12.7nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 443pF @ 10V
Power - Max: 820mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: U-DFN2020-6 (Type B)

pacchetto: -

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20V

3.2A (Ta)

75mOhm @ 2.8A, 4.5V

1V @ 250µA

12.7nC @ 8V

443pF @ 10V

820mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-UDFN Exposed Pad

U-DFN2020-6 (Type B)

DMP22D5UDJ-7A

Diodes Incorporated

MOSFET 2P-CH 20V 0.36A SOT963

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
Rds On (Max) @ Id, Vgs: 1.9Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 15V
Power - Max: 380mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-963
Supplier Device Package: SOT-963

pacchetto: -

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20V

360mA (Ta)

1.9Ohm @ 100mA, 4.5V

1V @ 250µA

0.3nC @ 4.5V

17pF @ 15V

380mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-963

DMN3012LEG-13

Diodes Incorporated

MOSFET 2N-CH 30V 10A PWRDI3333

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 15A, 5V, 6mOhm @ 15A, 5V
Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.15V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 4.5V, 12.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 15V, 1480pF @ 15V
Power - Max: 2.2W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerLDFN
Supplier Device Package: PowerDI3333-8 (Type D)

pacchetto: -

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30V

10A (Ta), 20A (Tc)

12mOhm @ 15A, 5V, 6mOhm @ 15A, 5V

2.1V @ 250µA, 1.15V @ 250µA

6.1nC @ 4.5V, 12.6nC @ 4.5V

850pF @ 15V, 1480pF @ 15V

2.2W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerLDFN

PowerDI3333-8 (Type D)

DMN3032LFDBWQ-7

Diodes Incorporated

MOSFET 2N-CH 30V 5.5A 6UDFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V
Power - Max: 820mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: U-DFN2020-6 (SWP) Type B

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30V

5.5A (Ta)

30mOhm @ 5.8A, 10V

2V @ 250µA

10.6nC @ 10V

500pF @ 15V

820mW

-55°C ~ 150°C (TJ)

Surface Mount

6-UDFN Exposed Pad

U-DFN2020-6 (SWP) Type B

BSS84V-7-79

Diodes Incorporated

MOSFET 2P-CH 50V 0.13A SOT563

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 130mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V
Vgs(th) (Max) @ Id: 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 25V
Power - Max: 150mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

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50V

130mA (Ta)

10Ohm @ 100mA, 5V

2V @ 1mA

-

45pF @ 25V

150mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

DMC2991UDR4-7

Diodes Incorporated

MOSFET N/P-CH 20V 0.5A 6DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), 360mA (Ta)
Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V, 1.9Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.28nC @ 4.5V, 0.3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 14.6pF @ 16V, 17pF @ 16V
Power - Max: 370mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-XFDFN Exposed Pad
Supplier Device Package: X2-DFN1010-6 (Type UXC)

pacchetto: -

Azione14.460

-

20V

500mA (Ta), 360mA (Ta)

990mOhm @ 100mA, 4.5V, 1.9Ohm @ 100mA, 4.5V

1V @ 250µA

0.28nC @ 4.5V, 0.3nC @ 4.5V

14.6pF @ 16V, 17pF @ 16V

370mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-XFDFN Exposed Pad

X2-DFN1010-6 (Type UXC)