Pagina 8 - Prodotti Microchip Technology - Transistor - FET, MOSFET - Singoli | Heisener Electronics
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Prodotti Microchip Technology - Transistor - FET, MOSFET - Singoli

Record 441
Pagina  8/16
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
JANSR2N7585U2
Microchip Technology

RH MOSFET 250V U2

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
JANSR2N7584T1
Microchip Technology

RH MOSFET 200V TO-254AA

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
JANSR2N7583U2
Microchip Technology

RH MOSFET 200V SMD 2.0

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
JANSR2N7593U3
Microchip Technology

RH MOSFET _ U3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250 V
  • Current - Continuous Drain (Id) @ 25°C: 12.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 12V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 12 V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 75W (Tc)
  • Rds On (Max) @ Id, Vgs: 210mOhm @ 7.8A, 12V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: U3 (SMD-0.5)
  • Package / Case: 3-SMD, No Lead
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
250 V
12.4A (Tc)
12V
4V @ 1mA
50 nC @ 12 V
-
±20V
-
75W (Tc)
210mOhm @ 7.8A, 12V
-55°C ~ 150°C (TJ)
Surface Mount
U3 (SMD-0.5)
3-SMD, No Lead
JANSR2N7591U3
Microchip Technology

RH MOSFET _ U3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200 V
  • Current - Continuous Drain (Id) @ 25°C: 16A
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: U3 (SMD-0.5)
  • Package / Case: 3-SMD, No Lead
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
200 V
16A
-
-
-
-
-
-
-
-
-
Surface Mount
U3 (SMD-0.5)
3-SMD, No Lead
MSC040SMA120B4
Microchip Technology

SICFET N-CH 1200V 66A TO247-4

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Vgs(th) (Max) @ Id: 2.6V @ 2mA
  • Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 1000 V
  • Vgs (Max): +23V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 323W (Tc)
  • Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-4
  • Package / Case: TO-247-4
pacchetto: -
Azione261
SiCFET (Silicon Carbide)
1200 V
66A (Tc)
20V
2.6V @ 2mA
137 nC @ 20 V
1990 pF @ 1000 V
+23V, -10V
-
323W (Tc)
50mOhm @ 40A, 20V
-55°C ~ 175°C (TJ)
Through Hole
TO-247-4
TO-247-4
APT6038SLLG
Microchip Technology

MOSFET N-CH 600V 17A D3PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 380mOhm @ 8.5A, 10V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: D3PAK
  • Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
600 V
17A (Tc)
-
5V @ 1mA
43 nC @ 10 V
1850 pF @ 25 V
-
-
-
380mOhm @ 8.5A, 10V
-
Surface Mount
D3PAK
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
APT77N60SC6-TR
Microchip Technology

MOSFET N-CH 600V 77A D3PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.6V @ 2.96mA
  • Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 481W (Tc)
  • Rds On (Max) @ Id, Vgs: 41mOhm @ 44.4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D3PAK
  • Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
pacchetto: -
Azione771
MOSFET (Metal Oxide)
600 V
77A (Tc)
10V
3.6V @ 2.96mA
260 nC @ 10 V
13600 pF @ 25 V
±20V
-
481W (Tc)
41mOhm @ 44.4A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D3PAK
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
MSC025SMA330B4
Microchip Technology

MOSFET SIC 3300 V 25 MOHM TO-247

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 3300 V
  • Current - Continuous Drain (Id) @ 25°C: 104A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Vgs(th) (Max) @ Id: 2.7V @ 7mA
  • Gate Charge (Qg) (Max) @ Vgs: 410 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds: 8720 pF @ 2640 V
  • Vgs (Max): +23V, -10V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-4
  • Package / Case: TO-247-4
pacchetto: -
Request a Quote
SiCFET (Silicon Carbide)
3300 V
104A (Tc)
20V
2.7V @ 7mA
410 nC @ 20 V
8720 pF @ 2640 V
+23V, -10V
-
-
31mOhm @ 40A, 20V
-55°C ~ 150°C (TJ)
Through Hole
TO-247-4
TO-247-4
APT1201R4SFLLG
Microchip Technology

MOSFET N-CH 1200V 9A D3PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 1.4Ohm @ 4.5A, 10V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: D3PAK
  • Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
1200 V
9A (Tc)
-
5V @ 1mA
120 nC @ 10 V
2500 pF @ 25 V
-
-
-
1.4Ohm @ 4.5A, 10V
-
Surface Mount
D3PAK
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
APT6013B2LLG
Microchip Technology

MOSFET N-CH 600V 43A T-MAX

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5630 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 130mOhm @ 21.5A, 10V
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: T-MAX™ [B2]
  • Package / Case: TO-247-3 Variant
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
600 V
43A (Tc)
-
5V @ 2.5mA
130 nC @ 10 V
5630 pF @ 25 V
-
-
-
130mOhm @ 21.5A, 10V
-
Through Hole
T-MAX™ [B2]
TO-247-3 Variant
APT5017BVRG
Microchip Technology

MOSFET N-CH 500V 30A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500 V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5280 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 170mOhm @ 500mA, 10V
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 [B]
  • Package / Case: TO-247-3
pacchetto: -
Azione150
MOSFET (Metal Oxide)
500 V
30A (Tc)
-
4V @ 1mA
300 nC @ 10 V
5280 pF @ 25 V
-
-
-
170mOhm @ 500mA, 10V
-
Through Hole
TO-247 [B]
TO-247-3
APT12040JVR
Microchip Technology

MOSFET N-CH 1200V 26A SOT227

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 1200 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 18000 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 700W (Tc)
  • Rds On (Max) @ Id, Vgs: 400mOhm @ 13A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SOT-227 (ISOTOP®)
  • Package / Case: SOT-227-4, miniBLOC
pacchetto: -
Azione39
MOSFET (Metal Oxide)
1200 V
26A (Tc)
10V
4V @ 5mA
1200 nC @ 10 V
18000 pF @ 25 V
±30V
-
700W (Tc)
400mOhm @ 13A, 10V
-55°C ~ 150°C (TJ)
Chassis Mount
SOT-227 (ISOTOP®)
SOT-227-4, miniBLOC
MRH25N45T1SR
Microchip Technology

RH MOSFET 250V TO-254AA

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
APT6025SVRG
Microchip Technology

MOSFET N-CH 600V 25A D3PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 275 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5160 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 250mOhm @ 500mA, 10V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: D3PAK
  • Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
600 V
25A (Tc)
-
4V @ 1mA
275 nC @ 10 V
5160 pF @ 25 V
-
-
-
250mOhm @ 500mA, 10V
-
Surface Mount
D3PAK
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
MSC035SMA070B4
Microchip Technology

TRANS SJT N-CH 700V 77A TO247-4

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 700 V
  • Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Vgs(th) (Max) @ Id: 2.7V @ 2mA (Typ)
  • Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 700 V
  • Vgs (Max): +23V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 283W (Tc)
  • Rds On (Max) @ Id, Vgs: 44mOhm @ 30A, 20V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-4
  • Package / Case: TO-247-4
pacchetto: -
Request a Quote
SiCFET (Silicon Carbide)
700 V
77A (Tc)
20V
2.7V @ 2mA (Typ)
99 nC @ 20 V
2010 pF @ 700 V
+23V, -10V
-
283W (Tc)
44mOhm @ 30A, 20V
-55°C ~ 175°C (TJ)
Through Hole
TO-247-4
TO-247-4
MSC080SMA120B
Microchip Technology

SICFET N-CH 1200V 37A TO247-3

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Vgs(th) (Max) @ Id: 2.8V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds: 838 pF @ 1000 V
  • Vgs (Max): +23V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 200W (Tc)
  • Rds On (Max) @ Id, Vgs: 100mOhm @ 15A, 20V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
pacchetto: -
Request a Quote
SiCFET (Silicon Carbide)
1200 V
37A (Tc)
20V
2.8V @ 1mA
64 nC @ 20 V
838 pF @ 1000 V
+23V, -10V
-
200W (Tc)
100mOhm @ 15A, 20V
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
MSC080SMA120J
Microchip Technology

SICFET N-CH 1.2KV 35A SOT227

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SOT-227 (ISOTOP®)
  • Package / Case: SOT-227-4, miniBLOC
pacchetto: -
Azione75
SiCFET (Silicon Carbide)
1200 V
37A (Tc)
-
-
-
-
-
-
-
-
-55°C ~ 175°C (TJ)
Chassis Mount
SOT-227 (ISOTOP®)
SOT-227-4, miniBLOC
MSC080SMA120S
Microchip Technology

SICFET N-CH 1200V 35A D3PAK

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 35A
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Vgs(th) (Max) @ Id: 2.8V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds: 838 pF @ 1000 V
  • Vgs (Max): +23V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 182W (Tc)
  • Rds On (Max) @ Id, Vgs: 100mOhm @ 15A, 20V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D3PAK
  • Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
pacchetto: -
Azione105
SiCFET (Silicon Carbide)
1200 V
35A
20V
2.8V @ 1mA
64 nC @ 20 V
838 pF @ 1000 V
+23V, -10V
-
182W (Tc)
100mOhm @ 15A, 20V
-55°C ~ 175°C (TJ)
Surface Mount
D3PAK
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
APT50M75JLL
Microchip Technology

MOSFET N-CH 500V 51A ISOTOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500 V
  • Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5590 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 75mOhm @ 25.5A, 10V
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Supplier Device Package: ISOTOP®
  • Package / Case: SOT-227-4, miniBLOC
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
500 V
51A (Tc)
-
5V @ 2.5mA
125 nC @ 10 V
5590 pF @ 25 V
-
-
-
75mOhm @ 25.5A, 10V
-
Chassis Mount
ISOTOP®
SOT-227-4, miniBLOC
APT50M50JVFR
Microchip Technology

MOSFET N-CH 500V 77A ISOTOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500 V
  • Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 1000 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 19600 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 50mOhm @ 500mA, 10V
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Supplier Device Package: ISOTOP®
  • Package / Case: SOT-227-4, miniBLOC
pacchetto: -
Azione24
MOSFET (Metal Oxide)
500 V
77A (Tc)
-
4V @ 5mA
1000 nC @ 10 V
19600 pF @ 25 V
-
-
-
50mOhm @ 500mA, 10V
-
Chassis Mount
ISOTOP®
SOT-227-4, miniBLOC
APT6021BLLG
Microchip Technology

MOSFET N-CH 600V 29A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3470 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 210mOhm @ 14.5A, 10V
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 [B]
  • Package / Case: TO-247-3
pacchetto: -
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MOSFET (Metal Oxide)
600 V
29A (Tc)
-
5V @ 1mA
80 nC @ 10 V
3470 pF @ 25 V
-
-
-
210mOhm @ 14.5A, 10V
-
Through Hole
TO-247 [B]
TO-247-3
APT12060LVFRG
Microchip Technology

MOSFET N-CH 1200V 20A TO264

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 650 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 600mOhm @ 10A, 10V
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-264 [L]
  • Package / Case: TO-264-3, TO-264AA
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
1200 V
20A (Tc)
-
4V @ 1mA
650 nC @ 10 V
9500 pF @ 25 V
-
-
-
600mOhm @ 10A, 10V
-
Through Hole
TO-264 [L]
TO-264-3, TO-264AA
APT5010JFLL
Microchip Technology

MOSFET N-CH 500V 41A ISOTOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500 V
  • Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 100mOhm @ 20.5A, 10V
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Supplier Device Package: ISOTOP®
  • Package / Case: SOT-227-4, miniBLOC
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
500 V
41A (Tc)
-
5V @ 2.5mA
95 nC @ 10 V
4360 pF @ 25 V
-
-
-
100mOhm @ 20.5A, 10V
-
Chassis Mount
ISOTOP®
SOT-227-4, miniBLOC
APT5010JVR
Microchip Technology

MOSFET N-CH 500V 44A ISOTOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500 V
  • Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 470 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 100mOhm @ 500mA, 10V
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Supplier Device Package: ISOTOP®
  • Package / Case: SOT-227-4, miniBLOC
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
500 V
44A (Tc)
-
4V @ 2.5mA
470 nC @ 10 V
8900 pF @ 25 V
-
-
-
100mOhm @ 500mA, 10V
-
Chassis Mount
ISOTOP®
SOT-227-4, miniBLOC
APT5010JLL
Microchip Technology

MOSFET N-CH 500V 41A ISOTOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500 V
  • Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 100mOhm @ 20.5A, 10V
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Supplier Device Package: ISOTOP®
  • Package / Case: SOT-227-4, miniBLOC
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
500 V
41A (Tc)
-
5V @ 2.5mA
95 nC @ 10 V
4360 pF @ 25 V
-
-
-
100mOhm @ 20.5A, 10V
-
Chassis Mount
ISOTOP®
SOT-227-4, miniBLOC
APT5010JVFR
Microchip Technology

MOSFET N-CH 500V 44A ISOTOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500 V
  • Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 470 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 100mOhm @ 500mA, 10V
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Supplier Device Package: ISOTOP®
  • Package / Case: SOT-227-4, miniBLOC
pacchetto: -
Azione63
MOSFET (Metal Oxide)
500 V
44A (Tc)
-
4V @ 2.5mA
470 nC @ 10 V
8900 pF @ 25 V
-
-
-
100mOhm @ 500mA, 10V
-
Chassis Mount
ISOTOP®
SOT-227-4, miniBLOC
MSC360SMA120SA
Microchip Technology

MOSFET SIC 1200 V 360 MOHM TO-26

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Vgs(th) (Max) @ Id: 3.14V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds: 255 pF @ 1000 V
  • Vgs (Max): +23V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 71W (Tc)
  • Rds On (Max) @ Id, Vgs: 450mOhm @ 5A, 20V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
pacchetto: -
Request a Quote
SiCFET (Silicon Carbide)
1200 V
11A (Tc)
20V
3.14V @ 250µA
21 nC @ 20 V
255 pF @ 1000 V
+23V, -10V
-
71W (Tc)
450mOhm @ 5A, 20V
-55°C ~ 175°C (TJ)
-
-
-