Immagine |
Numero di parte |
Produttore |
Descrizione |
pacchetto |
Azione |
Quantità |
Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microsemi Corporation |
DIODE SCHOTTKY 45V 1A DO204AL
|
pacchetto: DO-204AL, DO-41, Axial |
Azione7.984 |
|
45V | 1A | 580mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 45V | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE SCHOTTKY 40V 1A DO204AL
|
pacchetto: DO-204AL, DO-41, Axial |
Azione4.080 |
|
40V | 1A | 580mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 40V | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE SCHOTTKY 100V 1A DO204AL
|
pacchetto: DO-204AL, DO-41, Axial |
Azione4.864 |
|
100V | 1A | 830mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 100V | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE SCHOTTKY 90V 1A DO204AL
|
pacchetto: DO-204AL, DO-41, Axial |
Azione4.720 |
|
90V | 1A | 810mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 90V | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE SCHOTTKY 60V 1A DO204AL
|
pacchetto: DO-204AL, DO-41, Axial |
Azione4.976 |
|
60V | 1A | 690mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 60V | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE SCHOTTKY 50V 1A DO204AL
|
pacchetto: DO-204AL, DO-41, Axial |
Azione5.648 |
|
50V | 1A | 690mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 50V | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE SCHOTTKY 40V 1A DO204AL
|
pacchetto: DO-204AL, DO-41, Axial |
Azione4.304 |
|
40V | 1A | 690mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 40V | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 880V 1.4A AXIAL
|
pacchetto: E, Axial |
Azione7.600 |
|
880V | 1.4A | 1.4V @ 1.4A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 2µA @ 880V | 40pF @ 10V, 1MHz | Through Hole | E, Axial | - | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 660V 1.75A D5B
|
pacchetto: SQ-MELF, E |
Azione5.040 |
|
660V | 1.75A | 1.35V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 2µA @ 660V | 40pF @ 10V, 1MHz | Surface Mount | SQ-MELF, E | D-5B | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 440V 1.75A D5B
|
pacchetto: SQ-MELF, E |
Azione2.880 |
|
440V | 1.75A | 1.35V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 2µA @ 440V | 40pF @ 10V, 1MHz | Surface Mount | SQ-MELF, E | D-5B | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 440V 1.75A AXIAL
|
pacchetto: E, Axial |
Azione3.392 |
|
440V | 1.75A | 1.35V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 2µA @ 440V | 40pF @ 10V, 1MHz | Through Hole | E, Axial | - | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 220V 1.75A D5B
|
pacchetto: SQ-MELF, E |
Azione3.728 |
|
220V | 1.75A | 1.35V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 2µA @ 220V | 40pF @ 10V, 1MHz | Surface Mount | SQ-MELF, E | D-5B | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 220V 1.75A AXIAL
|
pacchetto: E, Axial |
Azione6.768 |
|
220V | 1.75A | 1.35V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 2µA @ 220V | 40pF @ 10V, 1MHz | Through Hole | E, Axial | - | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 1.1KV 1A D5A
|
pacchetto: SQ-MELF, A |
Azione3.184 |
|
1100V | 1A | 1.75V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 1µA @ 1100V | - | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 1.1KV 1A D5A
|
pacchetto: A, Axial |
Azione7.952 |
|
1100V | 1A | 1.75V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 1µA @ 1100V | - | Through Hole | A, Axial | A-PAK | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 990V 1A D5A
|
pacchetto: A, Axial |
Azione7.552 |
|
990V | 1A | 1.55V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 500nA @ 990V | - | Through Hole | A, Axial | A-PAK | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 880V 1A D5A
|
pacchetto: SQ-MELF, A |
Azione2.160 |
|
880V | 1A | 1.55V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 500nA @ 880V | - | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 880V 1A D5A
|
pacchetto: A, Axial |
Azione6.688 |
|
880V | 1A | 1.55V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 500nA @ 880V | - | Through Hole | A, Axial | A-PAK | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 660V 1.2A D5A
|
pacchetto: SQ-MELF, A |
Azione3.472 |
|
660V | 1.2A | 1.4V @ 1.2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 500nA @ 660V | - | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 440V 1.2A D5A
|
pacchetto: SQ-MELF, A |
Azione4.256 |
|
440V | 1.2A | 1.4V @ 1.2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 500nA @ 440V | - | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 440V 1.2A AXIAL
|
pacchetto: A, Axial |
Azione7.168 |
|
440V | 1.2A | 1.4V @ 1.2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 500nA @ 440V | - | Through Hole | A, Axial | - | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 220V 1.2A D5A
|
pacchetto: SQ-MELF, A |
Azione7.856 |
|
220V | 1.2A | 1.4V @ 1.2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 500nA @ 220V | - | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 220V 1.2A AXIAL
|
pacchetto: A, Axial |
Azione6.640 |
|
220V | 1.2A | 1.4V @ 1.2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 500nA @ 220V | - | Through Hole | A, Axial | - | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 50V 3A D5B
|
pacchetto: SQ-MELF, B |
Azione5.456 |
|
50V | 3A | 875mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 50V | 60pF @ 10V, 1MHz | Surface Mount | SQ-MELF, B | D-5B | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 100V 1A D5A
|
pacchetto: SQ-MELF, A |
Azione5.904 |
|
100V | 1A | 875mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 100V | 25pF @ 10V, 1MHz | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 50V 1A D5A
|
pacchetto: SQ-MELF, A |
Azione3.936 |
|
50V | 1A | 875mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 50V | 25pF @ 10V, 1MHz | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 50V 1A AXIAL
|
pacchetto: A, Axial |
Azione4.352 |
|
50V | 1A | 875mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 50V | 25pF @ 10V, 1MHz | Through Hole | A, Axial | - | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 800V 1A D5A
|
pacchetto: SQ-MELF, A |
Azione7.520 |
|
800V | 1A | 1.6V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 300ns | 500nA @ 800V | 20pF @ 12V, 1MHz | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 175°C |