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Prodotti Microsemi Corporation

Record 46.511
Pagina  1.554/1.662
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hot APT5518BFLLG
Microsemi Corporation

MOSFET N-CH 550V 31A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 550V
  • Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3286pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 403W (Tc)
  • Rds On (Max) @ Id, Vgs: 180 mOhm @ 15.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
pacchetto: TO-247-3
Azione6.352
MS1007
Microsemi Corporation

TRANS RF BIPO 233W 10A M174

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 55V
  • Frequency - Transition: 30MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 14dB
  • Power - Max: 233W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 18 @ 1.4A, 6V
  • Current - Collector (Ic) (Max): 10A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M174
  • Supplier Device Package: M174
pacchetto: M174
Azione5.328
JANTX1N2991B
Microsemi Corporation

DIODE ZENER 36V 10W DO213AA

  • Voltage - Zener (Nom) (Vz): 36V
  • Tolerance: ±5%
  • Power - Max: 10W
  • Impedance (Max) (Zzt): 10 Ohms
  • Current - Reverse Leakage @ Vr: 10µA @ 27.4V
  • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 2A
  • Operating Temperature: -65°C ~ 175°C
  • Mounting Type: Stud Mount
  • Package / Case: DO-203AA, DO-4, Stud
  • Supplier Device Package: DO-213AA (DO-4)
pacchetto: DO-203AA, DO-4, Stud
Azione4.352
hot 1N5370B
Microsemi Corporation

DIODE ZENER 56V 5W T18

  • Voltage - Zener (Nom) (Vz): 56V
  • Tolerance: ±5%
  • Power - Max: 5W
  • Impedance (Max) (Zzt): 35 Ohms
  • Current - Reverse Leakage @ Vr: 500nA @ 40.3V
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
  • Operating Temperature: -65°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: T-18, Axial
  • Supplier Device Package: T-18
pacchetto: T-18, Axial
Azione240.000
JAN1N751D-1
Microsemi Corporation

DIODE ZENER 5.1V 500MW DO35

  • Voltage - Zener (Nom) (Vz): 5.1V
  • Tolerance: ±1%
  • Power - Max: 500mW
  • Impedance (Max) (Zzt): 17 Ohms
  • Current - Reverse Leakage @ Vr: 5µA @ 2V
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
  • Operating Temperature: -65°C ~ 175°C
  • Mounting Type: Through Hole
  • Package / Case: DO-204AH, DO-35, Axial
  • Supplier Device Package: DO-35
pacchetto: DO-204AH, DO-35, Axial
Azione5.248
hot JANTX1N758A-1
Microsemi Corporation

DIODE ZENER 10V 500MW DO35

  • Voltage - Zener (Nom) (Vz): 10V
  • Tolerance: ±5%
  • Power - Max: 500mW
  • Impedance (Max) (Zzt): 7 Ohms
  • Current - Reverse Leakage @ Vr: 1µA @ 8V
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
  • Operating Temperature: -65°C ~ 175°C
  • Mounting Type: Through Hole
  • Package / Case: DO-204AH, DO-35, Axial
  • Supplier Device Package: DO-35 (DO-204AH)
pacchetto: DO-204AH, DO-35, Axial
Azione7.568
1N5372C/TR8
Microsemi Corporation

DIODE ZENER 62V 5W T18

  • Voltage - Zener (Nom) (Vz): 62V
  • Tolerance: ±2%
  • Power - Max: 5W
  • Impedance (Max) (Zzt): 42 Ohms
  • Current - Reverse Leakage @ Vr: 500nA @ 44.6V
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
  • Operating Temperature: -65°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: T-18, Axial
  • Supplier Device Package: T-18
pacchetto: T-18, Axial
Azione5.792
1N5354E3/TR8
Microsemi Corporation

DIODE ZENER 17V 5W T18

  • Voltage - Zener (Nom) (Vz): 17V
  • Tolerance: ±20%
  • Power - Max: 5W
  • Impedance (Max) (Zzt): 2.5 Ohms
  • Current - Reverse Leakage @ Vr: 500nA @ 12.2V
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
  • Operating Temperature: -65°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: T-18, Axial
  • Supplier Device Package: T-18
pacchetto: T-18, Axial
Azione6.256
1PMT4103C/TR7
Microsemi Corporation

DIODE ZENER 9.1V 1W DO216

  • Voltage - Zener (Nom) (Vz): 9.1V
  • Tolerance: ±2%
  • Power - Max: 1W
  • Impedance (Max) (Zzt): 200 Ohms
  • Current - Reverse Leakage @ Vr: 1µA @ 6.92V
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
  • Operating Temperature: -55°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: DO-216AA
  • Supplier Device Package: DO-216
pacchetto: DO-216AA
Azione3.776
1N5937CPE3/TR12
Microsemi Corporation

DIODE ZENER 33V 1.5W DO204AL

  • Voltage - Zener (Nom) (Vz): 33V
  • Tolerance: ±2%
  • Power - Max: 1.5W
  • Impedance (Max) (Zzt): 33 Ohms
  • Current - Reverse Leakage @ Vr: 1µA @ 25.1V
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
  • Operating Temperature: -65°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
pacchetto: DO-204AL, DO-41, Axial
Azione6.048
3EZ100D2E3/TR12
Microsemi Corporation

DIODE ZENER 100V 3W DO204AL

  • Voltage - Zener (Nom) (Vz): 100V
  • Tolerance: ±2%
  • Power - Max: 3W
  • Impedance (Max) (Zzt): 160 Ohms
  • Current - Reverse Leakage @ Vr: 500nA @ 76V
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
  • Operating Temperature: -65°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
pacchetto: DO-204AL, DO-41, Axial
Azione2.144
1N4749PE3/TR12
Microsemi Corporation

DIODE ZENER 24V 1W DO204AL

  • Voltage - Zener (Nom) (Vz): 24V
  • Tolerance: ±10%
  • Power - Max: 1W
  • Impedance (Max) (Zzt): 25 Ohms
  • Current - Reverse Leakage @ Vr: 5µA @ 18.2V
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
  • Operating Temperature: -65°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
pacchetto: DO-204AL, DO-41, Axial
Azione4.832
1N6622US
Microsemi Corporation

DIODE GEN PURP 660V 1.2A A-MELF

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 660V
  • Current - Average Rectified (Io): 1.2A
  • Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 30ns
  • Current - Reverse Leakage @ Vr: 500nA @ 660V
  • Capacitance @ Vr, F: 10pF @ 10V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SQ-MELF, A
  • Supplier Device Package: A-MELF
  • Operating Temperature - Junction: -65°C ~ 150°C
pacchetto: SQ-MELF, A
Azione7.884
hot LX8384A-00CDD
Microsemi Corporation

IC REG LDO ADJ 5A TO263

  • Applications: Converter, Intel Pentium? P54C-VRE
  • Voltage - Input: 4.75 V ~ 10 V
  • Number of Outputs: 1
  • Voltage - Output: Adjustable
  • Operating Temperature: 0°C ~ 125°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-4, D2Pak (3 Leads + Tab), TO-263AA
  • Supplier Device Package: -
pacchetto: TO-263-4, D2Pak (3 Leads + Tab), TO-263AA
Azione204.312
JAN1N5314UR-1
Microsemi Corporation

DIODE CURRENT REG 100V

  • Function: Current Regulator
  • Sensing Method: -
  • Accuracy: ±10%
  • Voltage - Input: 100V (Max)
  • Current - Output: 4.7mA
  • Operating Temperature: -65°C ~ 175°C
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AB, MELF
  • Supplier Device Package: DO-213AB (MELF, LL41)
pacchetto: DO-213AB, MELF
Azione3.904
JAN1N5296-1
Microsemi Corporation

DIODE CURRENT REG 100V

  • Function: Current Regulator
  • Sensing Method: -
  • Accuracy: ±10%
  • Voltage - Input: 100V (Max)
  • Current - Output: 910µA
  • Operating Temperature: -65°C ~ 175°C
  • Mounting Type: Through Hole
  • Package / Case: DO-204AA, DO-7, Axial
  • Supplier Device Package: DO-7
pacchetto: DO-204AA, DO-7, Axial
Azione2.976
M2S090TS-1FGG676T2
Microsemi Corporation

IC FPGA SOC

  • Architecture: MCU, FPGA
  • Core Processor: ARM? Cortex?-M3
  • Flash Size: 512KB
  • RAM Size: 64KB
  • Peripherals: DDR, PCIe, SERDES
  • Connectivity: CAN, Ethernet, I2C, SPI, UART/USART, USB
  • Speed: 166MHz
  • Primary Attributes: FPGA - 90K Logic Modules
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Package / Case: 676-BGA
  • Supplier Device Package: 676-FBGA (27x27)
pacchetto: 676-BGA
Azione7.056
AGL400V5-FG144I
Microsemi Corporation

IC FPGA 97 I/O 144FBGA

  • Number of LABs/CLBs: -
  • Number of Logic Elements/Cells: 9216
  • Total RAM Bits: 55296
  • Number of I/O: 97
  • Number of Gates: 400000
  • Voltage - Supply: 1.425 V ~ 1.575 V
  • Mounting Type: Surface Mount
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Package / Case: 144-LBGA
  • Supplier Device Package: 144-FPBGA (13x13)
pacchetto: 144-LBGA
Azione3.648
AX500-1FGG484
Microsemi Corporation

IC FPGA 317 I/O 484FBGA

  • Number of LABs/CLBs: 8064
  • Number of Logic Elements/Cells: -
  • Total RAM Bits: 73728
  • Number of I/O: 317
  • Number of Gates: 500000
  • Voltage - Supply: 1.425 V ~ 1.575 V
  • Mounting Type: Surface Mount
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Package / Case: 484-BGA
  • Supplier Device Package: 484-FPBGA (23x23)
pacchetto: 484-BGA
Azione2.256
MXPLAD15KP14A
Microsemi Corporation

TVS DIODE 14VWM 23.2VC PLAD

  • Type: Zener
  • Unidirectional Channels: 1
  • Bidirectional Channels: -
  • Voltage - Reverse Standoff (Typ): 14V
  • Voltage - Breakdown (Min): 15.6V
  • Voltage - Clamping (Max) @ Ipp: 23.2V
  • Current - Peak Pulse (10/1000µs): 645A
  • Power - Peak Pulse: 15000W (15kW)
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Nonstandard SMD
  • Supplier Device Package: PLAD
pacchetto: Nonstandard SMD
Azione2.610
MXPLAD6.5KP110AE3
Microsemi Corporation

TVS DIODE 110VWM 177VC PLAD

  • Type: Zener
  • Unidirectional Channels: 1
  • Bidirectional Channels: -
  • Voltage - Reverse Standoff (Typ): 110V
  • Voltage - Breakdown (Min): 122V
  • Voltage - Clamping (Max) @ Ipp: 177V
  • Current - Peak Pulse (10/1000µs): 36.7A
  • Power - Peak Pulse: 6500W (6.5kW)
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Nonstandard SMD
  • Supplier Device Package: PLAD
pacchetto: Nonstandard SMD
Azione4.464
MXSMCG36AE3
Microsemi Corporation

TVS DIODE 36VWM 58.1VC DO215AB

  • Type: Zener
  • Unidirectional Channels: 1
  • Bidirectional Channels: -
  • Voltage - Reverse Standoff (Typ): 36V
  • Voltage - Breakdown (Min): 40V
  • Voltage - Clamping (Max) @ Ipp: 58.1V
  • Current - Peak Pulse (10/1000µs): 25.8A
  • Power - Peak Pulse: 1500W (1.5kW)
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: -
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-215AB, SMC Gull Wing
  • Supplier Device Package: SMCG (DO-215AB)
pacchetto: DO-215AB, SMC Gull Wing
Azione8.928
MXSMCJ110CA
Microsemi Corporation

TVS DIODE 110VWM 177VC DO214AB

  • Type: Zener
  • Unidirectional Channels: -
  • Bidirectional Channels: 1
  • Voltage - Reverse Standoff (Typ): 110V
  • Voltage - Breakdown (Min): 122V
  • Voltage - Clamping (Max) @ Ipp: 177V
  • Current - Peak Pulse (10/1000µs): 8.4A
  • Power - Peak Pulse: 1500W (1.5kW)
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: -
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB (SMCJ)
pacchetto: DO-214AB, SMC
Azione3.222
MXLSMCG48CAE3
Microsemi Corporation

TVS DIODE 48VWM 77.4VC DO215AB

  • Type: Zener
  • Unidirectional Channels: -
  • Bidirectional Channels: 1
  • Voltage - Reverse Standoff (Typ): 48V
  • Voltage - Breakdown (Min): 53.3V
  • Voltage - Clamping (Max) @ Ipp: 77.4V
  • Current - Peak Pulse (10/1000µs): 19.4A
  • Power - Peak Pulse: 1500W (1.5kW)
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: -
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-215AB, SMC Gull Wing
  • Supplier Device Package: SMCG (DO-215AB)
pacchetto: DO-215AB, SMC Gull Wing
Azione3.582
MXL1.5KE200CAE3
Microsemi Corporation

TVS DIODE 171VWM 274VC CASE1

  • Type: Zener
  • Unidirectional Channels: -
  • Bidirectional Channels: 1
  • Voltage - Reverse Standoff (Typ): 171V
  • Voltage - Breakdown (Min): 190V
  • Voltage - Clamping (Max) @ Ipp: 274V
  • Current - Peak Pulse (10/1000µs): 5.5A
  • Power - Peak Pulse: 1500W (1.5kW)
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: -
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: DO-201AA, DO-27, Axial
  • Supplier Device Package: CASE-1
pacchetto: DO-201AA, DO-27, Axial
Azione4.734
SMCJ6052E3/TR13
Microsemi Corporation

TVS DIODE 29VWM 52VC SMCJ

  • Type: Zener
  • Unidirectional Channels: 1
  • Bidirectional Channels: -
  • Voltage - Reverse Standoff (Typ): 29V
  • Voltage - Breakdown (Min): 32.4V
  • Voltage - Clamping (Max) @ Ipp: 52V
  • Current - Peak Pulse (10/1000µs): 29A
  • Power - Peak Pulse: 1500W (1.5kW)
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB (SMCJ)
pacchetto: DO-214AB, SMC
Azione3.096
1N5930AG
Microsemi Corporation

DIODE ZENER 16V 1.25W DO204AL

  • Voltage - Zener (Nom) (Vz): 16 V
  • Tolerance: ±10%
  • Power - Max: 1.25 W
  • Impedance (Max) (Zzt): 10 Ohms
  • Current - Reverse Leakage @ Vr: 1 µA @ 12.2 V
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
  • Operating Temperature: -65°C ~ 175°C
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
pacchetto: -
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APT6017B2LLG
Microsemi Corporation

MOSFET N-CH 600V 35A T-MAX

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 500W (Tc)
  • Rds On (Max) @ Id, Vgs: 170mOhm @ 17.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: T-MAX™ [B2]
  • Package / Case: TO-247-3 Variant
pacchetto: -
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