Pagina 4 - Prodotti Rohm Semiconductor - Transistor - FET, MOSFET - Array | Heisener Electronics
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Prodotti Rohm Semiconductor - Transistor - FET, MOSFET - Array

Record 313
Pagina  4/12
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
EM6K7T2CR
Rohm Semiconductor

MOSFET 2N-CH 20V 0.2A EMT6

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
  • Rds On (Max) @ Id, Vgs: 1.2Ohm @ 200mA, 2.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V
  • Power - Max: 150mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: EMT6
pacchetto: -
Azione8.631
-
20V
200mA (Ta)
1.2Ohm @ 200mA, 2.5V
1V @ 1mA
-
25pF @ 10V
150mW
150°C (TJ)
Surface Mount
SOT-563, SOT-666
EMT6
SH8KC6TB1
Rohm Semiconductor

MOSFET 2N-CH 60V 6.5A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
  • Rds On (Max) @ Id, Vgs: 32mOhm @ 6.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 7.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 30V
  • Power - Max: 2W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
pacchetto: -
Azione59.919
-
60V
6.5A (Ta)
32mOhm @ 6.5A, 10V
2.5V @ 1mA
7.6nC @ 10V
460pF @ 30V
2W (Ta)
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
HP8JE5TB1
Rohm Semiconductor

-100V 12.5A, DUAL PCH+PCH, HSOP8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 12.5A (Tc)
  • Rds On (Max) @ Id, Vgs: 127mOhm @ 4.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1370pF @ 50V
  • Power - Max: 3W (Ta), 21W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-HSOP
pacchetto: -
Request a Quote
-
100V
4.5A (Ta), 12.5A (Tc)
127mOhm @ 4.5A, 10V
2.5V @ 1mA
38nC @ 10V
1370pF @ 50V
3W (Ta), 21W (Tc)
150°C (TJ)
Surface Mount
8-PowerTDFN
8-HSOP
SH8M24GZETB
Rohm Semiconductor

MOSFET N/P-CH 45V 6A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 45V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
  • Rds On (Max) @ Id, Vgs: 46mOhm @ 4.5A, 10V, 63mOhm @ 3.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 5V, 18.2nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V, 1700pF @ 10V
  • Power - Max: 1.4W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
pacchetto: -
Azione27.324
-
45V
6A (Ta)
46mOhm @ 4.5A, 10V, 63mOhm @ 3.5A, 10V
2.5V @ 1mA
9.6nC @ 5V, 18.2nC @ 5V
550pF @ 10V, 1700pF @ 10V
1.4W (Ta)
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
SH8K26GZ0TB1
Rohm Semiconductor

MOSFET 2N-CH 40V 6A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
  • Rds On (Max) @ Id, Vgs: 38mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 10V
  • Power - Max: 2W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
pacchetto: -
Azione22.446
-
40V
6A (Ta)
38mOhm @ 6A, 10V
2.5V @ 1mA
2.9nC @ 5V
280pF @ 10V
2W (Ta)
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
QS8M51HZGTR
Rohm Semiconductor

100V NCH + PCH SMALL SIGNAL MOSF

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta), 1.5A (Ta)
  • Rds On (Max) @ Id, Vgs: 325mOhm @ 2A, 10V, 470mOhm @ 1.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 5V, 17nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V, 950pF @ 25V
  • Power - Max: 1.1W (Ta)
  • Operating Temperature: -55°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: TSMT8
pacchetto: -
Azione8.910
-
100V
2A (Ta), 1.5A (Ta)
325mOhm @ 2A, 10V, 470mOhm @ 1.5A, 10V
2.5V @ 1mA
4.7nC @ 5V, 17nC @ 5V
290pF @ 25V, 950pF @ 25V
1.1W (Ta)
-55°C ~ 150°C
Surface Mount
8-SMD, Flat Lead
TSMT8
SH8KC7TB1
Rohm Semiconductor

MOSFET 2N-CH 60V 10.5A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
  • Rds On (Max) @ Id, Vgs: 12.4mOhm @ 10.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 30V
  • Power - Max: 2W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
pacchetto: -
Azione5.658
-
60V
10.5A (Ta)
12.4mOhm @ 10.5A, 10V
2.5V @ 1mA
22nC @ 10V
1400pF @ 30V
2W (Ta)
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
QH8MC5TCR
Rohm Semiconductor

MOSFET N/P-CH 60V 3A/3.5A TSMT8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 3.5A (Ta)
  • Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 10V, 91mOhm @ 3.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 10V, 17.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 30V, 850pF @ 30V
  • Power - Max: 1.1W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: TSMT8
pacchetto: -
Azione18.162
-
60V
3A (Ta), 3.5A (Ta)
90mOhm @ 3A, 10V, 91mOhm @ 3.5A, 10V
2.5V @ 1mA
3.1nC @ 10V, 17.3nC @ 10V
135pF @ 30V, 850pF @ 30V
1.1W (Ta)
150°C (TJ)
Surface Mount
8-SMD, Flat Lead
TSMT8
QH8K26TR
Rohm Semiconductor

MOSFET 2N-CH 40V 7A TSMT8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
  • Rds On (Max) @ Id, Vgs: 38mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 275pF @ 20V
  • Power - Max: 1.1W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: TSMT8
pacchetto: -
Azione4.902
-
40V
7A (Ta)
38mOhm @ 7A, 10V
2.5V @ 1mA
2.9nC @ 5V
275pF @ 20V
1.1W (Ta)
150°C (TJ)
Surface Mount
8-SMD, Flat Lead
TSMT8
SP8K52FRATB
Rohm Semiconductor

MOSFET 2N-CH 100V 3A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
  • Rds On (Max) @ Id, Vgs: 170mOhm @ 3A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 25V
  • Power - Max: 2W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
pacchetto: -
Azione7.380
-
100V
3A (Ta)
170mOhm @ 3A, 10V
2.5V @ 1mA
8.5nC @ 5V
610pF @ 25V
2W
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
SP8M31HZGTB
Rohm Semiconductor

MOSFET N/P-CH 60V 4.5A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
  • Rds On (Max) @ Id, Vgs: 65mOhm @ 4.5A, 10V, 70mOhm @ 4.5A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 7nC @ 5V, 40nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V, 2500pF @ 10V
  • Power - Max: 2W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
pacchetto: -
Azione3.630
-
60V
4.5A (Ta)
65mOhm @ 4.5A, 10V, 70mOhm @ 4.5A, 10V
3V @ 1mA
7nC @ 5V, 40nC @ 10V
500pF @ 10V, 2500pF @ 10V
2W (Ta)
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
UT6J3TCR1
Rohm Semiconductor

MOSFET 2P-CH 20V 3A 8DFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
  • Rds On (Max) @ Id, Vgs: 85mOhm @ 3A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 10V
  • Power - Max: 2W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerUDFN
  • Supplier Device Package: DFN2020-8D
pacchetto: -
Azione8.922
-
20V
3A (Ta)
85mOhm @ 3A, 4.5V
1V @ 1mA
8.5nC @ 4.5V
2000pF @ 10V
2W (Ta)
150°C (TJ)
Surface Mount
8-PowerUDFN
DFN2020-8D
HP8MC5TB1
Rohm Semiconductor

60V 12A, DUAL NCH+PCH, HSOP8, PO

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 12A (Tc), 5A (Ta), 12A (Tc)
  • Rds On (Max) @ Id, Vgs: 90mOhm @ 4.5A, 10V, 96mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 10V, 17.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 30V, 850pF @ 30V
  • Power - Max: 3W (Ta), 20W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-HSOP
pacchetto: -
Request a Quote
-
60V
4.5A (Ta), 12A (Tc), 5A (Ta), 12A (Tc)
90mOhm @ 4.5A, 10V, 96mOhm @ 5A, 10V
2.5V @ 1mA
3.1nC @ 10V, 17.3nC @ 10V
135pF @ 30V, 850pF @ 30V
3W (Ta), 20W (Tc)
150°C (TJ)
Surface Mount
8-PowerTDFN
8-HSOP
SH8KA2TB1
Rohm Semiconductor

MOSFET 2N-CH 30V 8A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
  • Rds On (Max) @ Id, Vgs: 28mOhm @ 8A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 15V
  • Power - Max: 2W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
pacchetto: -
Azione6.516
-
30V
8A (Ta)
28mOhm @ 8A, 10V
2.5V @ 1mA
8nC @ 10V
330pF @ 15V
2W (Ta)
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
QS8M31TR
Rohm Semiconductor

MOSFET N/P-CH 60V 3A/2A TSMT8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 2A (Ta)
  • Rds On (Max) @ Id, Vgs: 112mOhm @ 3A, 10V, 210mOhm @ 2A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA, 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 4nC @ 5V, 7.2nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 10V, 750pF @ 10V
  • Power - Max: 1.1W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: TSMT8
pacchetto: -
Azione10.890
-
60V
3A (Ta), 2A (Ta)
112mOhm @ 3A, 10V, 210mOhm @ 2A, 10V
2.5V @ 1mA, 3V @ 1mA
4nC @ 5V, 7.2nC @ 5V
270pF @ 10V, 750pF @ 10V
1.1W (Ta)
150°C (TJ)
Surface Mount
8-SMD, Flat Lead
TSMT8
QH8K51TR
Rohm Semiconductor

MOSFET 2N-CH 100V 2A TSMT8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Rds On (Max) @ Id, Vgs: 325mOhm @ 2A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V
  • Power - Max: 1.1W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: TSMT8
pacchetto: -
Azione48.780
-
100V
2A (Ta)
325mOhm @ 2A, 10V
2.5V @ 1mA
4.7nC @ 5V
290pF @ 25V
1.1W (Ta)
150°C (TJ)
Surface Mount
8-SMD, Flat Lead
TSMT8
QH8JC5TCR
Rohm Semiconductor

MOSFET 2P-CH 60V 3.5A TSMT8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
  • Rds On (Max) @ Id, Vgs: 91mOhm @ 3.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 30V
  • Power - Max: 1.1W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: TSMT8
pacchetto: -
Azione14.064
-
60V
3.5A (Ta)
91mOhm @ 3.5A, 10V
2.5V @ 1mA
17.3nC @ 10V
850pF @ 30V
1.1W (Ta)
150°C (TJ)
Surface Mount
8-SMD, Flat Lead
TSMT8
QS6K21FRATR
Rohm Semiconductor

MOSFET 2N-CH 45V 1A TSMT6

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 45V
  • Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
  • Rds On (Max) @ Id, Vgs: 420mOhm @ 1A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 95pF @ 10V
  • Power - Max: 950mW (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: TSMT6 (SC-95)
pacchetto: -
Azione18.981
-
45V
1A (Ta)
420mOhm @ 1A, 4.5V
1.5V @ 1mA
2.1nC @ 4.5V
95pF @ 10V
950mW (Ta)
150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
TSMT6 (SC-95)
EM6M2T2CR
Rohm Semiconductor

MOSFET N/P-CH 20V EMT6

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
SH8KA4TB1
Rohm Semiconductor

MOSFET 2N-CH 30V 9A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
  • Rds On (Max) @ Id, Vgs: 21.4mOhm @ 9A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 15V
  • Power - Max: 2W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
pacchetto: -
Azione7.245
-
30V
9A (Ta)
21.4mOhm @ 9A, 10V
2.5V @ 1mA
15.5nC @ 10V
640pF @ 15V
2W (Ta)
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
SH8K37GZETB
Rohm Semiconductor

MOSFET 2N-CH 60V 5.5A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
  • Rds On (Max) @ Id, Vgs: 46mOhm @ 5.5A, 10V
  • Vgs(th) (Max) @ Id: 2.7V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 30V
  • Power - Max: 1.4W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
pacchetto: -
Azione7.068
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60V
5.5A (Ta)
46mOhm @ 5.5A, 10V
2.7V @ 100µA
9.7nC @ 10V
500pF @ 30V
1.4W (Ta)
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
SH8K3TB1
Rohm Semiconductor

MOSFET 2N-CH 30V 7A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
  • Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V
  • Power - Max: 2W (Ta)
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
pacchetto: -
Azione4.689
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30V
7A (Ta)
24mOhm @ 7A, 10V
2.5V @ 1mA
11.8nC @ 5V
600pF @ 10V
2W (Ta)
150°C
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
HP8MA2TB1
Rohm Semiconductor

MOSFET N/P-CH 30V 18A/15A 8HSOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 15A (Ta)
  • Rds On (Max) @ Id, Vgs: 9.6mOhm @ 18A, 10V, 17.9mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 25nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V, 1250pF @ 15V
  • Power - Max: 3W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-HSOP
pacchetto: -
Azione6.912
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30V
18A (Ta), 15A (Ta)
9.6mOhm @ 18A, 10V, 17.9mOhm @ 15A, 10V
2.5V @ 1mA
22nC @ 10V, 25nC @ 10V
1100pF @ 15V, 1250pF @ 15V
3W (Ta)
150°C (TJ)
Surface Mount
8-PowerTDFN
8-HSOP
SP8K41HZGTB
Rohm Semiconductor

MOSFET 2N-CH 80V 3.4A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
  • Rds On (Max) @ Id, Vgs: 130mOhm @ 3.4A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V
  • Power - Max: 2W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
pacchetto: -
Azione6.378
-
80V
3.4A (Ta)
130mOhm @ 3.4A, 10V
2.5V @ 1mA
6.6nC @ 5V
600pF @ 10V
2W (Ta)
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
SH8ME5TB1
Rohm Semiconductor

MOSFET 100V 4.5A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
  • Rds On (Max) @ Id, Vgs: 58mOhm @ 4.5A, 10V, 91mOhm @ 4.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V, 52nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 50V, 2100pF @ 50V
  • Power - Max: 2W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
pacchetto: -
Azione7.254
-
100V
4.5A (Ta)
58mOhm @ 4.5A, 10V, 91mOhm @ 4.5A, 10V
2.5V @ 1mA
6.7nC @ 10V, 52nC @ 10V
305pF @ 50V, 2100pF @ 50V
2W (Ta)
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
RZM001P02T2CL
Rohm Semiconductor

MOSFET 2P-CH 20V EMT6

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
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UT6MB5TCR
Rohm Semiconductor

MOSFET 40V 5A/3.5A HUML2020L8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 3.5A (Tc)
  • Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V, 122mOhm @ 3.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 2W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-PowerUDFN
  • Supplier Device Package: HUML2020L8
pacchetto: -
Azione8.970
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40V
5A (Ta), 3.5A (Tc)
48mOhm @ 5A, 10V, 122mOhm @ 3.5A, 10V
2.5V @ 1mA
-
-
2W (Ta)
150°C (TJ)
Surface Mount
6-PowerUDFN
HUML2020L8
HS8MA2TCR1
Rohm Semiconductor

MOSFET N/P-CH 30V 5A/7A 9DFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 7A (Ta)
  • Rds On (Max) @ Id, Vgs: 80mOhm @ 5.5A, 10V, 35mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V, 8.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 10V, 365pF @ 10V
  • Power - Max: 2W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerWDFN
  • Supplier Device Package: DFN3333-9DC
pacchetto: -
Azione2.130
-
30V
5A (Ta), 7A (Ta)
80mOhm @ 5.5A, 10V, 35mOhm @ 7A, 10V
2.5V @ 1mA
7.8nC @ 10V, 8.4nC @ 10V
320pF @ 10V, 365pF @ 10V
2W (Ta)
150°C (TJ)
Surface Mount
8-PowerWDFN
DFN3333-9DC