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Diodi - Raddrizzatori - Singoli

Record 30.119
Pagina 1/1.004
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
A magazzino
Quantità
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
MBRB1650HE3/45
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 50V 16A TO263AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 16A
  • Voltage - Forward (Vf) (Max) @ If: 750mV @ 16A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 50V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
  • Operating Temperature - Junction: -65°C ~ 150°C
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
A magazzino190
50V
16A
750mV @ 16A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 50V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB
-65°C ~ 150°C
RS1PDHE3/85A
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 1A DO220AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150ns
  • Current - Reverse Leakage @ Vr: 1µA @ 200V
  • Capacitance @ Vr, F: 9pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-220AA
  • Supplier Device Package: DO-220AA (SMP)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: DO-220AA
A magazzino472
200V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
1µA @ 200V
9pF @ 4V, 1MHz
Surface Mount
DO-220AA
DO-220AA (SMP)
-55°C ~ 150°C
hotMUR120
ON Semiconductor

DIODE GEN PURP 200V 1A AXIAL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 875mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 2µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: Axial
  • Operating Temperature - Junction: -65°C ~ 175°C
pacchetto: DO-204AL, DO-41, Axial
A magazzino66.080
200V
1A
875mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
2µA @ 200V
-
Through Hole
DO-204AL, DO-41, Axial
Axial
-65°C ~ 175°C
hotMUR460RL
ON Semiconductor

DIODE GEN PURP 600V 4A DO201AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1.28V @ 4A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AA, DO-27, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -65°C ~ 175°C
pacchetto: DO-201AA, DO-27, Axial
A magazzino1.261
600V
4A
1.28V @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
10µA @ 600V
-
Through Hole
DO-201AA, DO-27, Axial
DO-201AD
-65°C ~ 175°C
50WQ04FNTRL
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 5.5A DPAK

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 5.5A
  • Voltage - Forward (Vf) (Max) @ If: 510mV @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 3mA @ 40V
  • Capacitance @ Vr, F: 405pF @ 5V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-PAK (TO-252AA)
  • Operating Temperature - Junction: -40°C ~ 150°C
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
A magazzino185
40V
5.5A
510mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
3mA @ 40V
405pF @ 5V, 1MHz
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-PAK (TO-252AA)
-40°C ~ 150°C
10TQ035STRR
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 35V 10A D2PAK

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 35V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 570mV @ 10A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 2mA @ 35V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
A magazzino150
35V
10A
570mV @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
-
2mA @ 35V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
-55°C ~ 175°C
VSKE320-12
Vishay Semiconductor Diodes Division

DIODE MODULE 1.2KV 320A MAGNAPAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 320A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50mA @ 1200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: 3-MAGN-A-PAK?
  • Supplier Device Package: MAGN-A-PAK?
  • Operating Temperature - Junction: -
pacchetto: 3-MAGN-A-PAK?
A magazzino146
1200V
320A
-
Standard Recovery >500ns, > 200mA (Io)
-
50mA @ 1200V
-
Chassis Mount
3-MAGN-A-PAK?
MAGN-A-PAK?
-
VS-307U160
Vishay Semiconductor Diodes Division

DIODE GP 1.6KV 330A DO205AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600V
  • Current - Average Rectified (Io): 330A
  • Voltage - Forward (Vf) (Max) @ If: 1.46V @ 942A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-205AB, DO-9, Stud
  • Supplier Device Package: DO-205AB, DO-9
  • Operating Temperature - Junction: -40°C ~ 180°C
pacchetto: DO-205AB, DO-9, Stud
A magazzino218
1600V
330A
1.46V @ 942A
Standard Recovery >500ns, > 200mA (Io)
-
-
-
Chassis, Stud Mount
DO-205AB, DO-9, Stud
DO-205AB, DO-9
-40°C ~ 180°C
F1827D1600
Crydom Co.

DIODE MODULE 1.6KV 25A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600V
  • Current - Average Rectified (Io): 25A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.55V @ 75A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
  • Operating Temperature - Junction: -
pacchetto: Module
A magazzino142
1600V
25A (DC)
1.55V @ 75A
Standard Recovery >500ns, > 200mA (Io)
-
-
-
Chassis Mount
Module
Module
-
1N649UR-1
Microsemi Corporation

DIODE GEN PURP 600V 400MA DO213

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 400mA
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 400mA
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50nA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AA (Glass)
  • Supplier Device Package: DO-213AA
  • Operating Temperature - Junction: -65°C ~ 175°C
pacchetto: DO-213AA (Glass)
A magazzino230
600V
400mA
1V @ 400mA
Standard Recovery >500ns, > 200mA (Io)
-
50nA @ 600V
-
Surface Mount
DO-213AA (Glass)
DO-213AA
-65°C ~ 175°C
VS-60APU06HN3
Vishay Semiconductor Diodes Division

DIODE FRED 600V 60A TO-247

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 60A
  • Voltage - Forward (Vf) (Max) @ If: 1.68V @ 60A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 81ns
  • Current - Reverse Leakage @ Vr: 50µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: TO-247-3
A magazzino352
600V
60A
1.68V @ 60A
Fast Recovery =< 500ns, > 200mA (Io)
81ns
50µA @ 600V
-
Through Hole
TO-247-3
TO-247AC
-55°C ~ 175°C
VS-12TQ035SPBF
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 35V 15A D2PAK

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 35V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 560mV @ 15A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1.75mA @ 35V
  • Capacitance @ Vr, F: 900pF @ 5V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
A magazzino400
35V
15A
560mV @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
-
1.75mA @ 35V
900pF @ 5V, 1MHz
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
-55°C ~ 150°C
MS104/TR12
Microsemi Corporation

DIODE SCHOTTKY 40V 1A DO204AL

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 690mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100µA @ 40V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: DO-204AL, DO-41, Axial
A magazzino406
40V
1A
690mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 40V
-
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 175°C
VBT3080S-E3/4W
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30A 80V TO-263AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 80V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 950mV @ 30A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 80V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
A magazzino119
80V
30A
950mV @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 80V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB
-55°C ~ 150°C
GPP60G-E3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 6A P600

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 6A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 5.5µs
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: P600, Axial
  • Supplier Device Package: P600
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: P600, Axial
A magazzino306
400V
6A
1.1V @ 6A
Standard Recovery >500ns, > 200mA (Io)
5.5µs
5µA @ 400V
-
Through Hole
P600, Axial
P600
-55°C ~ 175°C
SDURB1530TR
SMC Diode Solutions

DIODE GEN PURP 300V 15A D2PAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 300V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 1.26V @ 15A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 45ns
  • Current - Reverse Leakage @ Vr: 10µA @ 300V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
A magazzino313
300V
15A
1.26V @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
45ns
10µA @ 300V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
-55°C ~ 175°C
ES3JBHM4G
TSC America Inc.

DIODE, SUPER FAST, 3A, 600V, 35N

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.45V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Capacitance @ Vr, F: 34pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: DO-214AA, SMB
A magazzino342
600V
3A
1.45V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 600V
34pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
CD214B-B350LF
Bourns Inc.

DIODE SCHOTTKY 50V 3A DO214AA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 700mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 50V
  • Capacitance @ Vr, F: 250pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
  • Operating Temperature - Junction: -55°C ~ 125°C
pacchetto: DO-214AA, SMB
A magazzino481
50V
3A
700mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 50V
250pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 125°C
CGRC506-G
Comchip Technology

DIODE GEN PURP 800V 5A DO214AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 1.15V @ 5A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10µA @ 800V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB, (SMC)
  • Operating Temperature - Junction: 150°C (Max)
pacchetto: DO-214AB, SMC
A magazzino458
800V
5A
1.15V @ 5A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 800V
-
Surface Mount
DO-214AB, SMC
DO-214AB, (SMC)
150°C (Max)
1N6484HE3/97
Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 1A DO213AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10µA @ 1000V
  • Capacitance @ Vr, F: 8pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AB, MELF (Glass)
  • Supplier Device Package: DO-213AB
  • Operating Temperature - Junction: -65°C ~ 175°C
pacchetto: DO-213AB, MELF (Glass)
A magazzino209
1000V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 1000V
8pF @ 4V, 1MHz
Surface Mount
DO-213AB, MELF (Glass)
DO-213AB
-65°C ~ 175°C
S4D M6G
TSC America Inc.

DIODE, 4A, 200V, DO-214AB (SMC)

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1.15V @ 4A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.5µs
  • Current - Reverse Leakage @ Vr: 100µA @ 200V
  • Capacitance @ Vr, F: 60pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB, (SMC)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: DO-214AB, SMC
A magazzino336
200V
4A
1.15V @ 4A
Standard Recovery >500ns, > 200mA (Io)
1.5µs
100µA @ 200V
60pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB, (SMC)
-55°C ~ 150°C
GP10Y-E3/53
Vishay Semiconductor Diodes Division

DIODE GEN PURP 1.6KV 1A DO204AL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 3µs
  • Current - Reverse Leakage @ Vr: 5µA @ 1600V
  • Capacitance @ Vr, F: 5pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -65°C ~ 150°C
pacchetto: DO-204AL, DO-41, Axial
A magazzino368
1600V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
3µs
5µA @ 1600V
5pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-65°C ~ 150°C
RS2J-M3/52T
Vishay Semiconductor Diodes Division

DIODE SW 1.5A 600V 250NS DO214AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1.5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 250ns
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Capacitance @ Vr, F: 17pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: DO-214AA, SMB
A magazzino383
600V
1.5A
1.3V @ 1.5A
Fast Recovery =< 500ns, > 200mA (Io)
250ns
5µA @ 600V
17pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
ES1CL RUG
TSC America Inc.

DIODE, SUPER FAST, 1A, 150V, 35N

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 150V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 5µA @ 150V
  • Capacitance @ Vr, F: 10pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: Sub SMA
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: DO-219AB
A magazzino130
150V
1A
950mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 150V
10pF @ 1V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
BAS82-GS18
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 50V 30MA SOD80

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 30mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 15mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200nA @ 50V
  • Capacitance @ Vr, F: 1.6pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AC, MINI-MELF, SOD-80
  • Supplier Device Package: SOD-80 MiniMELF
  • Operating Temperature - Junction: 125°C (Max)
pacchetto: DO-213AC, MINI-MELF, SOD-80
A magazzino422
50V
30mA (DC)
1V @ 15mA
Small Signal =< 200mA (Io), Any Speed
-
200nA @ 50V
1.6pF @ 1V, 1MHz
Surface Mount
DO-213AC, MINI-MELF, SOD-80
SOD-80 MiniMELF
125°C (Max)
hotGL34J-E3/98
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 500MA DO213

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 500mA
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.5µs
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Capacitance @ Vr, F: 4pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AA (Glass)
  • Supplier Device Package: DO-213AA (GL34)
  • Operating Temperature - Junction: -65°C ~ 175°C
pacchetto: DO-213AA (Glass)
A magazzino10.000
600V
500mA
1.3V @ 500mA
Standard Recovery >500ns, > 200mA (Io)
1.5µs
5µA @ 600V
4pF @ 4V, 1MHz
Surface Mount
DO-213AA (Glass)
DO-213AA (GL34)
-65°C ~ 175°C
STPSC20H12D
STMicroelectronics

DIODE SCHOTTKY 1.2KV 20A TO220AC

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 20A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 120µA @ 1200V
  • Capacitance @ Vr, F: 1650pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -40°C ~ 175°C
pacchetto: TO-220-2
A magazzino487
1200V
20A
1.5V @ 20A
No Recovery Time > 500mA (Io)
0ns
120µA @ 1200V
1650pF @ 0V, 1MHz
Through Hole
TO-220-2
TO-220AC
-40°C ~ 175°C
STTH1R02RL
STMicroelectronics

DIODE GEN PURP 200V 1.5A DO41

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 1.5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 30ns
  • Current - Reverse Leakage @ Vr: 3µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-41
  • Operating Temperature - Junction: 175°C (Max)
pacchetto: DO-204AL, DO-41, Axial
A magazzino7.868
200V
1.5A
1V @ 1.5A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
3µA @ 200V
-
Through Hole
DO-204AL, DO-41, Axial
DO-41
175°C (Max)
hotCDBA240LL-HF
Comchip Technology

DIODE SCHOTTKY 40V 2A DO214AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 2A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 350mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 40V
  • Capacitance @ Vr, F: 160pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 100°C
pacchetto: DO-214AC, SMA
A magazzino6.000
40V
2A (DC)
350mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 40V
160pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 100°C
6A4-T
Diodes Incorporated

DIODE GEN PURP 400V 6A R6

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 900mV @ 6A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10µA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: R6, Axial
  • Supplier Device Package: R-6
  • Operating Temperature - Junction: -65°C ~ 175°C
pacchetto: R6, Axial
A magazzino36.066
400V
6A
900mV @ 6A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 400V
-
Through Hole
R6, Axial
R-6
-65°C ~ 175°C