Immagine |
Numero di parte |
Produttore |
Descrizione |
pacchetto |
Azione |
Quantità |
Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 3A DO201AD
|
pacchetto: DO-201AD, Axial |
Azione2.720 |
|
100V | 3A | 1.25V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 10µA @ 100V | 28pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -50°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 50V 10A ITO220AC
|
pacchetto: TO-220-2 Full Pack, Isolated Tab |
Azione4.880 |
|
50V | 10A | 800mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 50V | - | Through Hole | TO-220-2 Full Pack, Isolated Tab | ITO-220AC | -65°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 1A DO214AC
|
pacchetto: DO-214AC, SMA |
Azione5.104 |
|
600V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 1.8µs | 1µA @ 600V | 12pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
||
Infineon Technologies Industrial Power and Controls Americas |
RECTIFIER DIODE MOD 1200V 1150A
|
pacchetto: - |
Azione5.840 |
|
- | - | - | - | - | - | - | - | - | - | - |
||
Powerex Inc. |
DIODE MODULE 1.2KV 500A DO200AB
|
pacchetto: DO-200AB, B-PUK |
Azione3.536 |
|
1200V | 500A | 2.25V @ 1500A | Standard Recovery >500ns, > 200mA (Io) | 3µs | 50mA @ 1200V | - | Chassis Mount | DO-200AB, B-PUK | DO-200AB, B-PUK | - |
||
Powerex Inc. |
DIODE STUD MNT 240A 600V DO-9
|
pacchetto: - |
Azione2.720 |
|
- | - | - | - | - | - | - | - | - | - | - |
||
Vishay Semiconductor Diodes Division |
DIODE GP 600V 150A POWERTAB
|
pacchetto: PowerTab? |
Azione6.352 |
|
600V | 150A | 1.63V @ 150A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 8µA @ 600V | - | Through Hole | PowerTab? | PowerTab? | -55°C ~ 175°C |
||
Vishay Semiconductor Diodes Division |
DIODE INPUT RECT 20A TO-220AB
|
pacchetto: TO-220-3 |
Azione4.192 |
|
1200V | 20A | 1.1V @ 20A | Standard Recovery >500ns, > 200mA (Io) | - | 100µA @ 1200V | - | Through Hole | TO-220-3 | TO-220AB | -40°C ~ 150°C |
||
Microsemi Corporation |
DIODE SCHOTTKY 1A 70V SMBG
|
pacchetto: - |
Azione7.264 |
|
- | - | - | - | - | - | - | - | - | - | - |
||
Micro Commercial Co |
DIODE SCHOTTKY 100V 10A DO214AB
|
pacchetto: DO-214AB, SMC |
Azione108.000 |
|
100V | 10A | 850mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 100V | - | Surface Mount | DO-214AB, SMC | DO-214AB, (SMC) | -55°C ~ 125°C |
||
Micro Commercial Co |
DIODE GEN PURP 100V 4A DO201AD
|
pacchetto: DO-201AD, Axial |
Azione2.480 |
|
100V | 4A | 1.85V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 100V | 50pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 2.4A TO277A
|
pacchetto: TO-277, 3-PowerDFN |
Azione4.112 |
|
600V | 2.4A | 1.05V @ 4A | Standard Recovery >500ns, > 200mA (Io) | 2.2µs | 10µA @ 600V | 28pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
||
TSC America Inc. |
DIODE, SCHOTTKY, STANDARD, 3A, 1
|
pacchetto: DO-201AD, Axial |
Azione2.480 |
|
100V | 3A | 850mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 100V | - | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
||
Comchip Technology |
DIODE SCHOTTKY 40V 2A DO214AC
|
pacchetto: DO-214AC, SMA |
Azione3.248 |
|
40V | 2A (DC) | 400mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | 30pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -50°C ~ 150°C |
||
TSC America Inc. |
DIODE, HIGH EFFICIENT, 3A, 200V,
|
pacchetto: DO-214AB, SMC |
Azione6.784 |
|
200V | 3A | 1V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 200V | 80pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB, (SMC) | -55°C ~ 150°C |
||
TSC America Inc. |
DIODE, SCHOTTKY, STANDARD, 2A, 1
|
pacchetto: DO-219AB |
Azione2.608 |
|
150V | 2A | 950mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 150V | - | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 1A MPG06
|
pacchetto: MPG06, Axial |
Azione5.904 |
|
600V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 600ns | 5µA @ 600V | 10pF @ 4V, 1MHz | Through Hole | MPG06, Axial | MPG06 | -55°C ~ 150°C |
||
TSC America Inc. |
DIODE, SCHOTTKY, STANDARD, 2A, 6
|
pacchetto: DO-219AB |
Azione6.608 |
|
60V | 2A | 700mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 400µA @ 60V | - | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
||
TSC America Inc. |
DIODE, HIGH EFFICIENT, 1A, 600V,
|
pacchetto: DO-204AL, DO-41, Axial |
Azione5.216 |
|
600V | 1A | 1.7V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 5µA @ 600V | 10pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -55°C ~ 150°C |
||
Comchip Technology |
DIODE SCHOTTKY 40V 1A DO214AC
|
pacchetto: DO-214AC, SMA |
Azione6.816 |
|
40V | 1A | 600mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | 125°C (Max) |
||
TSC America Inc. |
DIODE, 1A, 1000V, AEC-Q101, SUB
|
pacchetto: DO-219AB |
Azione2.960 |
|
- | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 1.8µs | 5µA @ 1000V | 9pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 175°C |
||
TSC America Inc. |
DIODE, 1A, 100V, AEC-Q101, SUB S
|
pacchetto: DO-219AB |
Azione6.624 |
|
100V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 1.8µs | 5µA @ 100V | 9pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 175°C |
||
TSC America Inc. |
DIODE, FAST, 0.5A, 200V, 150NS,
|
pacchetto: DO-219AB |
Azione5.376 |
|
200V | 500mA | 1.3V @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 200V | 4pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
||
STMicroelectronics |
DIODE GEN PURP 600V 5A POWERFLAT
|
pacchetto: 8-PowerVDFN |
Azione8.808 |
|
600V | 5A | 2V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 55ns | 60µA @ 600V | - | Surface Mount | 8-PowerVDFN | PowerFlat? (5x6) | 175°C (Max) |
||
Rohm Semiconductor |
DIODE GEN PURP 600V 10A TO220NFM
|
pacchetto: TO-220-2 Full Pack |
Azione18.240 |
|
600V | 10A | 1.7V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 40ns | 10µA @ 600V | - | Through Hole | TO-220-2 Full Pack | TO-220NFM | 150°C (Max) |
||
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 1KV 1.5A DO220
|
pacchetto: DO-220AA |
Azione108.000 |
|
1000V | 1.5A (DC) | 1.15V @ 1.5A | Standard Recovery >500ns, > 200mA (Io) | 1.5µs | 5µA @ 1000V | 10.4pF @ 4V, 1MHz | Surface Mount | DO-220AA | DO-220AA (SMP) | -55°C ~ 175°C |
||
STMicroelectronics |
DIODE SCHOTTKY 40V 5A DO201AD
|
pacchetto: DO-201AD, Axial |
Azione2.144 |
|
40V | 5A | 500mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 40V | - | Through Hole | DO-201AD, Axial | DO-201AD | 150°C (Max) |
||
SMC Diode Solutions |
DIODE SCHOTTKY 60V TO277B
|
pacchetto: TO-277, 3-PowerDFN |
Azione3.408 |
|
60V | - | 670mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 150µA @ 60V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277B | -55°C ~ 150°C |
||
STMicroelectronics |
DIODE GEN PURP 1KV 8A TO220AC
|
pacchetto: TO-220-2 |
Azione61.500 |
|
1000V | 8A | 2V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 85ns | 5µA @ 1000V | - | Through Hole | TO-220-2 | TO-220AC | 175°C (Max) |
||
ON Semiconductor |
DIODE GEN PURP 100V 200MA SOD523
|
pacchetto: SC-79, SOD-523 |
Azione1.665.012 |
|
100V | 200mA (DC) | 1.2V @ 100mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 100nA @ 80V | 3pF @ 0V, 1MHz | Surface Mount | SC-79, SOD-523 | SOD-523 | -55°C ~ 150°C |