Pagina 20 - Transistor - Bipolari (BJT) - Array | Dispositivi a semiconduttore discreti | Heisener Electronics
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Transistor - Bipolari (BJT) - Array

Record 2.013
Pagina  20/72
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
2N5796
Central Semiconductor Corp

TRANS 2PNP 600MA 60V TO78-6

  • Transistor Type: 2 PNP (Dual)
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 600mW
  • Frequency - Transition: 200MHz
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-78-6 Metal Can
  • Supplier Device Package: TO-78-6
pacchetto: TO-78-6 Metal Can
Azione5.888
600mA
60V
-
-
100 @ 150mA, 10V
600mW
200MHz
-
Through Hole
TO-78-6 Metal Can
TO-78-6
2N2721
Central Semiconductor Corp

TRANS NPN DUAL TO78

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-78-6 Metal Can
  • Supplier Device Package: TO-78-6
pacchetto: TO-78-6 Metal Can
Azione7.136
-
-
-
-
-
-
-
-
Through Hole
TO-78-6 Metal Can
TO-78-6
HN1B04F(TE85L,F)
Toshiba Semiconductor and Storage

TRANS NPN/PNP 30V 0.5A SM6

  • Transistor Type: NPN, PNP
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V
  • Power - Max: 300mW
  • Frequency - Transition: 200MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-74, SOT-457
  • Supplier Device Package: SM6
pacchetto: SC-74, SOT-457
Azione5.232
500mA
30V
250mV @ 10mA, 100mA
100nA (ICBO)
70 @ 100mA, 1V
300mW
200MHz
150°C (TJ)
Surface Mount
SC-74, SOT-457
SM6
hot SSM2220PZ
Analog Devices Inc.

TRANS 2PNP 36V 0.02A 8DIP

  • Transistor Type: 2 PNP (Dual) Matched Pair
  • Current - Collector (Ic) (Max): 20mA
  • Voltage - Collector Emitter Breakdown (Max): 36V
  • Vce Saturation (Max) @ Ib, Ic: 100mV @ 100µA, 1mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: 190MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-PDIP
pacchetto: 8-DIP (0.300", 7.62mm)
Azione15.132
20mA
36V
100mV @ 100µA, 1mA
-
-
-
190MHz
-65°C ~ 150°C (TJ)
Through Hole
8-DIP (0.300", 7.62mm)
8-PDIP
XP0C30100L
Panasonic Electronic Components

TRANS NPN/PNP DARL 50V SMINI5

  • Transistor Type: NPN, PNP Complementary Darlington
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA / 500mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 2mA, 10V
  • Power - Max: 150mW
  • Frequency - Transition: 150MHz, 80MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 5-TSSOP, SC-70-5, SOT-353
  • Supplier Device Package: SMini5-G1
pacchetto: 5-TSSOP, SC-70-5, SOT-353
Azione4.320
100mA
50V
300mV @ 10mA, 100mA / 500mV @ 10mA, 100mA
100µA
160 @ 2mA, 10V
150mW
150MHz, 80MHz
150°C (TJ)
Surface Mount
5-TSSOP, SC-70-5, SOT-353
SMini5-G1
XN0440100L
Panasonic Electronic Components

TRANS 2PNP 50V 0.1A MINI6

  • Transistor Type: 2 PNP (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 2mA, 10V
  • Power - Max: 300mW
  • Frequency - Transition: 80MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6
  • Supplier Device Package: MINI6-G1
pacchetto: SOT-23-6
Azione2.464
100mA
50V
500mV @ 10mA, 100mA
100µA
160 @ 2mA, 10V
300mW
80MHz
150°C (TJ)
Surface Mount
SOT-23-6
MINI6-G1
SLA4060
Sanken

TRANS 4NPN DARL 120V 5A 12SIP

  • Transistor Type: 4 NPN Darlington (Quad)
  • Current - Collector (Ic) (Max): 5A
  • Voltage - Collector Emitter Breakdown (Max): 120V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 3mA, 3A
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 3A, 2V
  • Power - Max: 5W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 12-SIP, Exposed Tab
  • Supplier Device Package: 12-SIP
pacchetto: 12-SIP, Exposed Tab
Azione3.136
5A
120V
1.5V @ 3mA, 3A
10µA (ICBO)
2000 @ 3A, 2V
5W
-
150°C (TJ)
Through Hole
12-SIP, Exposed Tab
12-SIP
ULN2803AFWG,C,EL
Toshiba Semiconductor and Storage

TRANS 8NPN DARL 50V 0.5A 18SOL

  • Transistor Type: 8 NPN Darlington
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V
  • Power - Max: 1.31W
  • Frequency - Transition: -
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 18-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 18-SOL
pacchetto: 18-SOIC (0.295", 7.50mm Width)
Azione4.608
500mA
50V
1.6V @ 500µA, 350mA
-
1000 @ 350mA, 2V
1.31W
-
-40°C ~ 85°C (TA)
Surface Mount
18-SOIC (0.295", 7.50mm Width)
18-SOL
NSV60100DMTWTBG
ON Semiconductor

DUAL TRANSISTOR PNP

  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 100mA, 2A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
  • Power - Max: 2.27W
  • Frequency - Transition: 155MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-WDFN Exposed Pad
  • Supplier Device Package: 6-WDFN (2x2)
pacchetto: 6-WDFN Exposed Pad
Azione6.224
1A
60V
300mV @ 100mA, 2A
100nA (ICBO)
120 @ 500mA, 2V
2.27W
155MHz
-55°C ~ 150°C (TJ)
Surface Mount
6-WDFN Exposed Pad
6-WDFN (2x2)
UMZ8NTR
Rohm Semiconductor

TRANS NPN/PNP 50V/12V UMT6

  • Transistor Type: NPN, PNP
  • Current - Collector (Ic) (Max): 150mA, 500mA
  • Voltage - Collector Emitter Breakdown (Max): 50V, 12V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA / 250mV @ 10mA, 200mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V / 270 @ 10mA, 2V
  • Power - Max: 150mW
  • Frequency - Transition: 180MHz, 260MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: UMT6
pacchetto: 6-TSSOP, SC-88, SOT-363
Azione4.816
150mA, 500mA
50V, 12V
400mV @ 5mA, 50mA / 250mV @ 10mA, 200mA
100nA (ICBO)
120 @ 1mA, 6V / 270 @ 10mA, 2V
150mW
180MHz, 260MHz
150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
UMT6
PBSS5260PAPSX
Nexperia USA Inc.

TRANS 2PNP 60V 2A 6HUSON

  • Transistor Type: 2 PNP (Dual)
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 1A, 2V
  • Power - Max: 370mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: DFN2020D-6
pacchetto: 6-UDFN Exposed Pad
Azione4.016
2A
60V
500mV @ 200mA, 2A
100nA (ICBO)
110 @ 1A, 2V
370mW
100MHz
150°C (TJ)
Surface Mount
6-UDFN Exposed Pad
DFN2020D-6
NP0A45600A
Panasonic Electronic Components

TRANS 2PNP 15V 0.05A SSSMINI6

  • Transistor Type: 2 PNP (Dual)
  • Current - Collector (Ic) (Max): 50mA
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Vce Saturation (Max) @ Ib, Ic: 200mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 1V
  • Power - Max: 125mW
  • Frequency - Transition: 1.5GHz
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-963
  • Supplier Device Package: SSSMini6-F1
pacchetto: SOT-963
Azione3.984
50mA
15V
200mV @ 1mA, 10mA
100nA (ICBO)
50 @ 10mA, 1V
125mW
1.5GHz
125°C (TJ)
Surface Mount
SOT-963
SSSMini6-F1
DSS4160FDB-7
Diodes Incorporated

TRANS NPH U-DFN2020-6

  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 240mV @ 50mA, 1A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 2V
  • Power - Max: 405mW
  • Frequency - Transition: 175MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: U-DFN2020-6 (Type B)
pacchetto: 6-UDFN Exposed Pad
Azione2.592
1A
60V
240mV @ 50mA, 1A
100nA (ICBO)
150 @ 500mA, 2V
405mW
175MHz
-55°C ~ 150°C (TJ)
Surface Mount
6-UDFN Exposed Pad
U-DFN2020-6 (Type B)
2SC4207-GR(TE85L,F
Toshiba Semiconductor and Storage

TRANS 2NPN 50V 0.15A SMV

  • Transistor Type: 2 NPN (Dual) Common Emitter
  • Current - Collector (Ic) (Max): 150mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
  • Power - Max: 300mW
  • Frequency - Transition: 80MHz
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-74A, SOT-753
  • Supplier Device Package: SMV
pacchetto: SC-74A, SOT-753
Azione6.384
150mA
50V
250mV @ 10mA, 100mA
100nA (ICBO)
200 @ 2mA, 6V
300mW
80MHz
125°C (TJ)
Surface Mount
SC-74A, SOT-753
SMV
PBSS2515VPN,115
Nexperia USA Inc.

TRANS NPN/PNP 15V 0.5A SOT666

  • Transistor Type: NPN, PNP
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 100mA, 2V
  • Power - Max: 300mW
  • Frequency - Transition: 420MHz, 280MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-666
pacchetto: SOT-563, SOT-666
Azione116.100
500mA
15V
250mV @ 50mA, 500mA
100nA (ICBO)
150 @ 100mA, 2V
300mW
420MHz, 280MHz
150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-666
BC847SH6327XTSA1
Infineon Technologies

TRANS 2NPN 45V 0.1A SOT363

  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
  • Power - Max: 250mW
  • Frequency - Transition: 250MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-VSSOP, SC-88, SOT-363
  • Supplier Device Package: PG-SOT363-6
pacchetto: 6-VSSOP, SC-88, SOT-363
Azione144.912
100mA
45V
600mV @ 5mA, 100mA
15nA (ICBO)
200 @ 2mA, 5V
250mW
250MHz
150°C (TJ)
Surface Mount
6-VSSOP, SC-88, SOT-363
PG-SOT363-6
MPQ6700
Central Semiconductor Corp

TRANS 2NPN/2PNP 40V 0.2A

  • Transistor Type: 2 NPN, 2 PNP
  • Current - Collector (Ic) (Max): 200mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 1V
  • Power - Max: 500mW
  • Frequency - Transition: 200MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 14-DIP (0.300", 7.62mm)
  • Supplier Device Package: TO-116
pacchetto: 14-DIP (0.300", 7.62mm)
Azione7.932
200mA
40V
250mV @ 1mA, 10mA
50nA (ICBO)
70 @ 10mA, 1V
500mW
200MHz
-65°C ~ 150°C (TJ)
Through Hole
14-DIP (0.300", 7.62mm)
TO-116
hot FFB2222A
Fairchild/ON Semiconductor

TRANS 2NPN 40V 0.5A SC70-6

  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 10nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 300mW
  • Frequency - Transition: 300MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-70-6
pacchetto: 6-TSSOP, SC-88, SOT-363
Azione92.400
500mA
40V
1V @ 50mA, 500mA
10nA (ICBO)
100 @ 150mA, 10V
300mW
300MHz
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SC-70-6
hot MBT3946DW1T1G
ON Semiconductor

TRANS NPN/PNP 40V 0.2A SC88

  • Transistor Type: NPN, PNP
  • Current - Collector (Ic) (Max): 200mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
  • Power - Max: 150mW
  • Frequency - Transition: 300MHz, 250MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-88/SC70-6/SOT-363
pacchetto: 6-TSSOP, SC-88, SOT-363
Azione6.451.608
200mA
40V
300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA
-
100 @ 10mA, 1V
150mW
300MHz, 250MHz
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SC-88/SC70-6/SOT-363
HN1C03FU-B-LF
Toshiba Semiconductor and Storage

NPN + NPN IND. TRANSISTOR VCEO20

  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 300mA
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 4mA, 2V
  • Power - Max: 200mW
  • Frequency - Transition: 30MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
pacchetto: -
Azione16.884
300mA
20V
100mV @ 3mA, 30A
100nA (ICBO)
350 @ 4mA, 2V
200mW
30MHz
150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
US6
BC846BPN-AU_R1_000A1
Panjit International Inc.

SOT-363, TRANSISTOR

  • Transistor Type: 1 NPN, 1 PNP Complementary
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA / 650mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V / 220 @ 2mA, 5V
  • Power - Max: 225mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
pacchetto: -
Azione4.962
100mA
65V
600mV @ 5mA, 100mA / 650mV @ 5mA, 100mA
15nA (ICBO)
200 @ 2mA, 5V / 220 @ 2mA, 5V
225mW
100MHz
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
2N2920U-TR
Microchip Technology

TRANSISTOR DUAL SMALL-SIGNAL BJT

  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 30mA
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
  • Power - Max: 350mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, No Lead
  • Supplier Device Package: 6-SMD
pacchetto: -
Request a Quote
30mA
60V
300mV @ 100µA, 1mA
10µA (ICBO)
300 @ 1mA, 5V
350mW
-
-65°C ~ 200°C (TJ)
Surface Mount
6-SMD, No Lead
6-SMD
NJVMJK32CTWG
onsemi

POWER TRANSISTOR 100 V, 3 A DUAL

  • Transistor Type: -
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
  • Current - Collector Cutoff (Max): 50µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 4V
  • Power - Max: 2.7W
  • Frequency - Transition: 3MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-1023, 4-LFPAK
  • Supplier Device Package: LFPAK4 (5x6)
pacchetto: -
Azione8.940
3A
100V
1.2V @ 375mA, 3A
50µA
25 @ 1A, 4V
2.7W
3MHz
-65°C ~ 150°C (TJ)
Surface Mount
SOT-1023, 4-LFPAK
LFPAK4 (5x6)
MMDT3906TB6_R1_00001
Panjit International Inc.

DUAL PNP GENERAL PURPOSE SWITCHI

  • Transistor Type: 2 PNP (Dual)
  • Current - Collector (Ic) (Max): 200mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 50nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
  • Power - Max: 200mW
  • Frequency - Transition: 250MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
pacchetto: -
Azione20.550
200mA
40V
400mV @ 5mA, 50mA
50nA
100 @ 10mA, 1V
200mW
250MHz
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
MPQ7053-TIN-LEAD
Central Semiconductor Corp

TRANS 2NPN/2PNP 250V 0.5A

  • Transistor Type: 2 NPN, 2 PNP
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 250V
  • Vce Saturation (Max) @ Ib, Ic: 700mV @ 2mA, 20mA
  • Current - Collector Cutoff (Max): 250nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V
  • Power - Max: 750mW
  • Frequency - Transition: 50MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 14-DIP (0.300", 7.62mm)
  • Supplier Device Package: TO-116
pacchetto: -
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500mA
250V
700mV @ 2mA, 20mA
250nA (ICBO)
25 @ 30mA, 10V
750mW
50MHz
-65°C ~ 150°C (TJ)
Through Hole
14-DIP (0.300", 7.62mm)
TO-116
JAN2N6987U-TR
Microchip Technology

TRANSISTOR QUAD SMALL-SIGNAL BJT

  • Transistor Type: 4 PNP (Quad)
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 1W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, No Lead
  • Supplier Device Package: 6-SMD
pacchetto: -
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600mA
60V
1.6V @ 50mA, 500mA
10µA (ICBO)
100 @ 150mA, 10V
1W
-
-65°C ~ 200°C (TJ)
Surface Mount
6-SMD, No Lead
6-SMD
BC847BVNQ-7
Diodes Incorporated

GENERAL PURPOSE TRANSISTOR SOT56

  • Transistor Type: 1 NPN, 1 PNP Complementary
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
  • Power - Max: 150mW
  • Frequency - Transition: 300MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
pacchetto: -
Azione9.000
100mA
45V
600mV @ 5mA, 100mA
15nA (ICBO)
200 @ 2mA, 5V
150mW
300MHz
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
LS351-SOT-23-6L
Linear Integrated Systems, Inc.

TIGHTLY MATCHED, MONOLITHIC DUAL

  • Transistor Type: 2 PNP (Dual)
  • Current - Collector (Ic) (Max): 10mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 100µA, 1mA
  • Current - Collector Cutoff (Max): 200pA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
  • Power - Max: 500mW
  • Frequency - Transition: 200MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6
  • Supplier Device Package: SOT-23-6
pacchetto: -
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10mA
45V
500mV @ 100µA, 1mA
200pA (ICBO)
150 @ 1mA, 5V
500mW
200MHz
150°C (TJ)
Surface Mount
SOT-23-6
SOT-23-6