Pagina 21 - Transistor - Bipolari (BJT) - Array | Dispositivi a semiconduttore discreti | Heisener Electronics
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Transistor - Bipolari (BJT) - Array

Record 2.013
Pagina  21/72
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
SMBT3906SE6327HTSA1
Infineon Technologies

TRANS 2PNP 40V 0.2A SOT363

  • Transistor Type: 2 PNP (Dual)
  • Current - Collector (Ic) (Max): 200mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
  • Power - Max: 330mW
  • Frequency - Transition: 250MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-VSSOP, SC-88, SOT-363
  • Supplier Device Package: PG-SOT363-6
pacchetto: 6-VSSOP, SC-88, SOT-363
Azione3.280
200mA
40V
400mV @ 5mA, 50mA
50nA (ICBO)
100 @ 10mA, 1V
330mW
250MHz
150°C (TJ)
Surface Mount
6-VSSOP, SC-88, SOT-363
PG-SOT363-6
CEN911
Central Semiconductor Corp

TRANSISTOR DUAL TO78

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-78-6 Metal Can
  • Supplier Device Package: TO-78-6
pacchetto: TO-78-6 Metal Can
Azione3.456
-
-
-
-
-
-
-
-
Through Hole
TO-78-6 Metal Can
TO-78-6
SG2023J-DESC
Microsemi Corporation

TRANS 7NPN DARL 95V 0.5A 16DIP

  • Transistor Type: 7 NPN Darlington
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 95V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 16-CDIP (0.300", 7.62mm)
  • Supplier Device Package: 16-CDIP
pacchetto: 16-CDIP (0.300", 7.62mm)
Azione6.720
500mA
95V
1.6V @ 500µA, 350mA
-
1000 @ 350mA, 2V
-
-
150°C (TJ)
Through Hole
16-CDIP (0.300", 7.62mm)
16-CDIP
EMX2DXV6T5
ON Semiconductor

TRANS 2NPN 50V 0.1A SOT563

  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 500nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
  • Power - Max: 500mW
  • Frequency - Transition: 180MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
pacchetto: SOT-563, SOT-666
Azione5.824
100mA
50V
400mV @ 5mA, 50mA
500nA (ICBO)
120 @ 1mA, 6V
500mW
180MHz
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
hot L6221AD013TR
STMicroelectronics

TRANS 4NPN DARL 50V 1.8A 20SOIC

  • Transistor Type: 4 NPN Darlington (Quad)
  • Current - Collector (Ic) (Max): 1.8A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 1.8A
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: 1W
  • Frequency - Transition: -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 20-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 20-SO
pacchetto: 20-SOIC (0.295", 7.50mm Width)
Azione262.572
1.8A
50V
1.6V @ 1.8A
-
-
1W
-
-40°C ~ 150°C (TJ)
Surface Mount
20-SOIC (0.295", 7.50mm Width)
20-SO
XN0654300L
Panasonic Electronic Components

TRANS 2NPN 10V 0.065A MINI6

  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 65mA
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 8V
  • Power - Max: 200mW
  • Frequency - Transition: 8.5GHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6
  • Supplier Device Package: MINI6-G1
pacchetto: SOT-23-6
Azione6.176
65mA
10V
-
1µA (ICBO)
50 @ 20mA, 8V
200mW
8.5GHz
150°C (TJ)
Surface Mount
SOT-23-6
MINI6-G1
BC857SH6827XTSA1
Infineon Technologies

TRANS 2PNP 45V 0.1A SOT363

  • Transistor Type: 2 PNP (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
  • Power - Max: 250mW
  • Frequency - Transition: 250MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-VSSOP, SC-88, SOT-363
  • Supplier Device Package: PG-SOT363-6
pacchetto: 6-VSSOP, SC-88, SOT-363
Azione7.152
100mA
45V
650mV @ 5mA, 100mA
15nA (ICBO)
200 @ 2mA, 5V
250mW
250MHz
150°C (TJ)
Surface Mount
6-VSSOP, SC-88, SOT-363
PG-SOT363-6
JANTXV2N6990
Microsemi Corporation

TRANS 4NPN 50V 0.8A 14PIN

  • Transistor Type: 4 NPN (Quad)
  • Current - Collector (Ic) (Max): 800mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 400mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 14-Flatpack
  • Supplier Device Package: 14-Flatpack
pacchetto: 14-Flatpack
Azione4.432
800mA
50V
1V @ 50mA, 500mA
10µA (ICBO)
100 @ 150mA, 10V
400mW
-
-65°C ~ 200°C (TJ)
Surface Mount
14-Flatpack
14-Flatpack
hot SLA4071
Sanken

TRANS 4PNP DARL 100V 5A 12SIP

  • Transistor Type: 4 PNP Darlington (Quad)
  • Current - Collector (Ic) (Max): 5A
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 6mA, 3A
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 3A, 2V
  • Power - Max: 5W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 12-SIP, Exposed Tab
  • Supplier Device Package: 12-SIP
pacchetto: 12-SIP, Exposed Tab
Azione9.540
5A
100V
1.5V @ 6mA, 3A
10µA (ICBO)
2000 @ 3A, 2V
5W
-
150°C (TJ)
Through Hole
12-SIP, Exposed Tab
12-SIP
PBSS4160DSZ
Nexperia USA Inc.

PBSS4160DS/SOT457/SC-74

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione3.648
-
-
-
-
-
-
-
-
-
-
-
BC817DSF
Nexperia USA Inc.

TRANS 2NPN 45V 0.5A SC-74

  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
  • Power - Max: 370mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-74, SOT-457
  • Supplier Device Package: 6-TSOP
pacchetto: SC-74, SOT-457
Azione4.000
500mA
45V
700mV @ 50mA, 500mA
100nA (ICBO)
160 @ 100mA, 1V
370mW
100MHz
150°C (TJ)
Surface Mount
SC-74, SOT-457
6-TSOP
PBSS4350SPN,115
Nexperia USA Inc.

TRANS NPN/PNP 50V 2.7A 8SO

  • Transistor Type: NPN, PNP
  • Current - Collector (Ic) (Max): 2.7A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 340mV @ 270mA, 2.7A / 370mV @ 270mA, 2.7A
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 2V / 180 @ 1A, 2V
  • Power - Max: 750mW
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione21.396
2.7A
50V
340mV @ 270mA, 2.7A / 370mV @ 270mA, 2.7A
100nA
300 @ 1A, 2V / 180 @ 1A, 2V
750mW
-
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
DMMT3906-7-F
Diodes Incorporated

TRANS 2PNP 40V 0.2A SOT26

  • Transistor Type: 2 PNP (Dual) Matched Pair
  • Current - Collector (Ic) (Max): 200mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
  • Power - Max: 225mW
  • Frequency - Transition: 250MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6
  • Supplier Device Package: SOT-26
pacchetto: SOT-23-6
Azione2.832
200mA
40V
400mV @ 5mA, 50mA
-
100 @ 10mA, 1V
225mW
250MHz
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6
SOT-26
PBSS4240DPN,115
Nexperia USA Inc.

TRANS NPN/PNP 40V 6TSOP

  • Transistor Type: NPN, PNP
  • Current - Collector (Ic) (Max): 1.35A, 1.1A
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A / 530mV @ 200mA, 2A
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V / 300 @ 100mA, 5V
  • Power - Max: 1.1W
  • Frequency - Transition: 150MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-74, SOT-457
  • Supplier Device Package: 6-TSOP
pacchetto: SC-74, SOT-457
Azione23.604
1.35A, 1.1A
40V
400mV @ 200mA, 2A / 530mV @ 200mA, 2A
100nA
300 @ 500mA, 5V / 300 @ 100mA, 5V
1.1W
150MHz
150°C (TJ)
Surface Mount
SC-74, SOT-457
6-TSOP
BC847BPDW1T2G
ON Semiconductor

TRANS NPN/PNP 45V 0.1A SOT363

  • Transistor Type: NPN, PNP
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA / 650mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
  • Power - Max: 380mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-88/SC70-6/SOT-363
pacchetto: 6-TSSOP, SC-88, SOT-363
Azione143.766
100mA
45V
600mV @ 5mA, 100mA / 650mV @ 5mA, 100mA
15nA (ICBO)
200 @ 2mA, 5V
380mW
100MHz
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SC-88/SC70-6/SOT-363
hot MPQ2907A
Central Semiconductor Corp

TRANS 4PNP 60V 0.6A

  • Transistor Type: 4 PNP (Quad)
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 30mA, 300mA
  • Current - Collector Cutoff (Max): 50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 300mA, 10V
  • Power - Max: 650mW
  • Frequency - Transition: 200MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 14-DIP (0.300", 7.62mm)
  • Supplier Device Package: TO-116
pacchetto: 14-DIP (0.300", 7.62mm)
Azione4.464
600mA
60V
1.6V @ 30mA, 300mA
50nA (ICBO)
50 @ 300mA, 10V
650mW
200MHz
-65°C ~ 150°C (TJ)
Through Hole
14-DIP (0.300", 7.62mm)
TO-116
hot IMX2T108
Rohm Semiconductor

TRANS 2NPN 50V 0.15A 6SMT

  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 150mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
  • Power - Max: 300mW
  • Frequency - Transition: 180MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-74, SOT-457
  • Supplier Device Package: SMT6
pacchetto: SC-74, SOT-457
Azione2.771.400
150mA
50V
400mV @ 5mA, 50mA
100nA (ICBO)
120 @ 1mA, 6V
300mW
180MHz
150°C (TJ)
Surface Mount
SC-74, SOT-457
SMT6
hot ULN2803ADWG4
Texas Instruments

TRANS 8NPN DARL 50V 0.5A 18SO

  • Transistor Type: 8 NPN Darlington
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 18-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 18-SOIC
pacchetto: 18-SOIC (0.295", 7.50mm Width)
Azione104.460
500mA
50V
1.6V @ 500µA, 350mA
-
-
-
-
-40°C ~ 85°C (TA)
Surface Mount
18-SOIC (0.295", 7.50mm Width)
18-SOIC
hot DMMT5551-7-F
Diodes Incorporated

TRANS 2NPN 160V 0.2A SOT26

  • Transistor Type: 2 NPN (Dual) Matched Pair
  • Current - Collector (Ic) (Max): 200mA
  • Voltage - Collector Emitter Breakdown (Max): 160V
  • Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Power - Max: 300mW
  • Frequency - Transition: 300MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6
  • Supplier Device Package: SOT-26
pacchetto: SOT-23-6
Azione261.120
200mA
160V
200mV @ 5mA, 50mA
50nA (ICBO)
80 @ 10mA, 5V
300mW
300MHz
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6
SOT-26
2N5793U-TR
Microchip Technology

DUAL SMALL-SIGNAL BJT

  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 900mV @ 30mA, 300mA
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
  • Power - Max: 600mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, No Lead
  • Supplier Device Package: U
pacchetto: -
Request a Quote
600mA
40V
900mV @ 30mA, 300mA
10µA (ICBO)
40 @ 150mA, 10V
600mW
-
-65°C ~ 200°C (TJ)
Surface Mount
6-SMD, No Lead
U
SN75468N-A
Texas Instruments

PROTOTYPE

  • Transistor Type: -
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 16-DIP (0.300", 7.62mm)
  • Supplier Device Package: 16-PDIP
pacchetto: -
Request a Quote
500mA
100V
1.6V @ 500µA, 350mA
-
-
-
-
0°C ~ 70°C (TA)
Through Hole
16-DIP (0.300", 7.62mm)
16-PDIP
JAN2N5794UC-TR
Microchip Technology

DUAL SMALL-SIGNAL BJT

  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 900mV @ 30mA, 300mA
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 600mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, No Lead
  • Supplier Device Package: UC
pacchetto: -
Request a Quote
600mA
40V
900mV @ 30mA, 300mA
10µA (ICBO)
100 @ 150mA, 10V
600mW
-
-65°C ~ 200°C (TJ)
Surface Mount
6-SMD, No Lead
UC
ULN2803ADW-P
Texas Instruments

IC

  • Transistor Type: 8 NPN Darlington
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA
  • Current - Collector Cutoff (Max): 50µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 18-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 18-SOIC
pacchetto: -
Request a Quote
500mA
50V
1.6V @ 500µA, 350mA
50µA
-
-
-
-40°C ~ 85°C (TA)
Surface Mount
18-SOIC (0.295", 7.50mm Width)
18-SOIC
SG2004J-883B
Microchip Technology

DRIVER - MEDIUM CURRENT ARRAY, H

  • Transistor Type: 7 NPN Darlington
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -55°C ~ 125°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 16-CDIP (0.300", 7.62mm)
  • Supplier Device Package: 16-CERDIP
pacchetto: -
Request a Quote
500mA
50V
1.6V @ 500µA, 350mA
-
1000 @ 350mA, 2V
-
-
-55°C ~ 125°C (TA)
Through Hole
16-CDIP (0.300", 7.62mm)
16-CERDIP
BCM857QASZ
Nexperia USA Inc.

TRANS 2PNP 45V 0.1A DFN1010B-6

  • Transistor Type: 2 PNP (Dual) Matched Pair
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
  • Power - Max: 350mW
  • Frequency - Transition: 175MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-XFDFN Exposed Pad
  • Supplier Device Package: DFN1010B-6
pacchetto: -
Azione14.100
100mA
45V
400mV @ 5mA, 100mA
15nA (ICBO)
200 @ 2mA, 5V
350mW
175MHz
150°C (TJ)
Surface Mount
6-XFDFN Exposed Pad
DFN1010B-6
JANTXV2N3838
Microchip Technology

NPN TRANSISTOR

  • Transistor Type: 1 NPN, 1 PNP
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 350mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-FlatPack
  • Supplier Device Package: 6-FlatPack
pacchetto: -
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600mA
40V
400mV @ 15mA, 150mA
10µA (ICBO)
100 @ 150mA, 10V
350mW
-
-65°C ~ 200°C (TJ)
Surface Mount
6-FlatPack
6-FlatPack
MMPQ2222A-BK
Central Semiconductor Corp

TRANSISTOR

  • Transistor Type: 4 NPN (Quad)
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 10nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 1W
  • Frequency - Transition: 300MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 16-SOIC
pacchetto: -
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500mA
40V
1V @ 50mA, 500mA
10nA
100 @ 150mA, 10V
1W
300MHz
-55°C ~ 150°C (TJ)
Surface Mount
16-SOIC (0.154", 3.90mm Width)
16-SOIC
HN1B01FU-Y-LXHF
Toshiba Semiconductor and Storage

AUTO AEC-Q PNP + NPN TR VCEO:-50

  • Transistor Type: 1 NPN, 1 PNP
  • Current - Collector (Ic) (Max): 150mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA / 250mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
  • Power - Max: 200mW
  • Frequency - Transition: 120MHz, 150MHz
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
pacchetto: -
Azione17.634
150mA
50V
300mV @ 10mA, 100mA / 250mV @ 10mA, 100mA
100nA (ICBO)
120 @ 2mA, 6V
200mW
120MHz, 150MHz
-
Surface Mount
6-TSSOP, SC-88, SOT-363
US6