Pagina 40 - Transistor - Bipolari (BJT) - RF | Dispositivi a semiconduttore discreti

Numero di parte	Produttore	Descrizione	pacchetto	Azione	Voltage - Collector Emitter Breakdown (Max)	Frequency - Transition	Noise Figure (dB Typ @ f)	Gain	Power - Max	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector (Ic) (Max)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
BFG 235 E6327	Infineon Technologies	TRANSISTOR RF NPN 15V SOT-223 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 5.5GHz Noise Figure (dB Typ @ f): 1.7dB @ 900MHz Gain: 12.5dB Power - Max: 2W DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 200mA, 8V Current - Collector (Ic) (Max): 300mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: PG-SOT223-4	pacchetto: TO-261-4, TO-261AA	Azione4.352	15V	5.5GHz	1.7dB @ 900MHz	12.5dB	2W	75 @ 200mA, 8V	300mA	150°C (TJ)	Surface Mount	TO-261-4, TO-261AA	PG-SOT223-4
BF 770A E6327	Infineon Technologies	TRANSISTOR RF NPN 12V SOT-23 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 6GHz Noise Figure (dB Typ @ f): 1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz Gain: 9.5dB ~ 14.5dB Power - Max: 300mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V Current - Collector (Ic) (Max): 90mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23-3	pacchetto: TO-236-3, SC-59, SOT-23-3	Azione5.072	12V	6GHz	1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz	9.5dB ~ 14.5dB	300mW	70 @ 30mA, 8V	90mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	PG-SOT23-3
2SA1977-T1B-A	CEL	RF TRANSISTOR PNP SOT-23 Transistor Type: PNP Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8.5GHz Noise Figure (dB Typ @ f): 1.5dB @ 1GHz Gain: 12dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 8V Current - Collector (Ic) (Max): 50mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	pacchetto: TO-236-3, SC-59, SOT-23-3	Azione4.048	12V	8.5GHz	1.5dB @ 1GHz	12dB	200mW	20 @ 20mA, 8V	50mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23
2SC4957-T1-A	CEL	RF TRANSISTOR NPN SOT-143 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 6V Frequency - Transition: 12GHz Noise Figure (dB Typ @ f): 1.5dB @ 2GHz Gain: 11dB Power - Max: 180mW DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 3V Current - Collector (Ic) (Max): 30mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-253-4, TO-253AA Supplier Device Package: SOT-143	pacchetto: TO-253-4, TO-253AA	Azione3.344	6V	12GHz	1.5dB @ 2GHz	11dB	180mW	75 @ 10mA, 3V	30mA	150°C (TJ)	Surface Mount	TO-253-4, TO-253AA	SOT-143
MS2393	Microsemi Corporation	TRANS RF BIPO 87.5W 11A M138 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.025GHz ~ 1.15GHz Noise Figure (dB Typ @ f): - Gain: 8.2dB Power - Max: 583W DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 300mA, 5V Current - Collector (Ic) (Max): 11A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M138 Supplier Device Package: M138	pacchetto: M138	Azione3.104	65V	1.025GHz ~ 1.15GHz	-	8.2dB	583W	5 @ 300mA, 5V	11A	200°C (TJ)	Chassis Mount	M138	M138
NE85633-T1B-R25-A	CEL	RF TRANSISTOR NPN SOT-23 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1.1dB @ 1GHz Gain: 11.5dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 20mA, 10V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	pacchetto: TO-236-3, SC-59, SOT-23-3	Azione3.472	12V	7GHz	1.1dB @ 1GHz	11.5dB	200mW	125 @ 20mA, 10V	100mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23
NESG7030M04-A	CEL	DISCRETE RF DIODE Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 4.3V Frequency - Transition: 5.8GHz Noise Figure (dB Typ @ f): 0.5dB ~ 0.75dB @ 2GHz ~ 5.8GHz Gain: 14dB ~ 21dB Power - Max: 125mW DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 5mA, 2V Current - Collector (Ic) (Max): 30mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-343F Supplier Device Package: M04	pacchetto: SOT-343F	Azione5.280	4.3V	5.8GHz	0.5dB ~ 0.75dB @ 2GHz ~ 5.8GHz	14dB ~ 21dB	125mW	200 @ 5mA, 2V	30mA	150°C (TJ)	Surface Mount	SOT-343F	M04
EC3H02BA-TL-H	ON Semiconductor	TRANS NPN 10V 70A ECSP1006-3 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1dB @ 1GHz Gain: 8.5dB Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 5V Current - Collector (Ic) (Max): 70mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-XFDFN Supplier Device Package: 3-ECSP1006	pacchetto: 3-XFDFN	Azione5.520	10V	7GHz	1dB @ 1GHz	8.5dB	100mW	120 @ 20mA, 5V	70mA	150°C (TJ)	Surface Mount	3-XFDFN	3-ECSP1006
UPA814T-A	CEL	TRANSISTOR NPN 9GHZ SOT-363 Transistor Type: 2 NPN (Dual) Voltage - Collector Emitter Breakdown (Max): 6V Frequency - Transition: 9GHz Noise Figure (dB Typ @ f): 1.5dB @ 2GHz Gain: - Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 3mA, 1V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: 6-SO	pacchetto: 6-TSSOP, SC-88, SOT-363	Azione2.912	6V	9GHz	1.5dB @ 2GHz	-	200mW	80 @ 3mA, 1V	100mA	150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	6-SO
NE85633-T1B-R24-A	CEL	RF TRANSISTOR NPN SOT-23 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1.1dB @ 1GHz Gain: 11.5dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 10V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	pacchetto: TO-236-3, SC-59, SOT-23-3	Azione2.032	12V	7GHz	1.1dB @ 1GHz	11.5dB	200mW	80 @ 20mA, 10V	100mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23
NE97733-A	CEL	RF TRANSISTOR PNP SOT-23 Transistor Type: PNP Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8.5GHz Noise Figure (dB Typ @ f): 1.5dB @ 1GHz Gain: 12dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 8V Current - Collector (Ic) (Max): 50mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	pacchetto: TO-236-3, SC-59, SOT-23-3	Azione4.928	12V	8.5GHz	1.5dB @ 1GHz	12dB	200mW	20 @ 20mA, 8V	50mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23
NE85639R-T1-A	CEL	TRANSISTOR NPN 1GHZ SOT-143R Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 9GHz Noise Figure (dB Typ @ f): 1.5dB ~ 2.1dB @ 1GHz Gain: 13.5dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-143R Supplier Device Package: SOT-143R	pacchetto: SOT-143R	Azione3.584	12V	9GHz	1.5dB ~ 2.1dB @ 1GHz	13.5dB	200mW	50 @ 20mA, 10V	100mA	150°C (TJ)	Surface Mount	SOT-143R	SOT-143R
MPS5179	ON Semiconductor	TRANS NPN RF SS 12V TO92 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 2GHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V Current - Collector (Ic) (Max): 50mA Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	pacchetto: TO-226-3, TO-92-3 (TO-226AA)	Azione62.244	12V	2GHz	-	-	200mW	25 @ 3mA, 1V	50mA	-	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
BFP410H6327XTSA1	Infineon Technologies	TRANS RF NPN 25GHZ 4.5V SOT343 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5V Frequency - Transition: 25GHz Noise Figure (dB Typ @ f): 1.2dB @ 2GHz Gain: 21.5dB Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 13mA, 2V Current - Collector (Ic) (Max): 40mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: SOT-343	pacchetto: SC-82A, SOT-343	Azione4.000	5V	25GHz	1.2dB @ 2GHz	21.5dB	150mW	60 @ 13mA, 2V	40mA	150°C (TJ)	Surface Mount	SC-82A, SOT-343	SOT-343
TCS800	Microsemi Corporation	TRANS RF BIPO 1944W 50A 55SM1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.03GHz Noise Figure (dB Typ @ f): - Gain: 8dB ~ 9dB Power - Max: 1944W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 5V Current - Collector (Ic) (Max): 50A Operating Temperature: 230°C (TJ) Mounting Type: Chassis Mount Package / Case: 55SM Supplier Device Package: 55SM	pacchetto: 55SM	Azione2.544	65V	1.03GHz	-	8dB ~ 9dB	1944W	20 @ 5A, 5V	50A	230°C (TJ)	Chassis Mount	55SM	55SM
MAPRST0912-350	M/A-Com Technology Solutions	TRANS NPN 350W 960MHZ-1215MHZ Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.215GHz Noise Figure (dB Typ @ f): - Gain: 9.4dB Power - Max: 350W DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): 32.5A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: - Supplier Device Package: -	pacchetto: -	Azione7.312	65V	1.215GHz	-	9.4dB	350W	-	32.5A	200°C (TJ)	Chassis Mount	-	-
MS2552	Microsemi Corporation	TRANS RF BIPO 880W 24A M112 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.025GHz ~ 1.15GHz Noise Figure (dB Typ @ f): - Gain: 6.7dB Power - Max: 880W DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 5V Current - Collector (Ic) (Max): 24A Operating Temperature: 250°C (TJ) Mounting Type: Chassis Mount Package / Case: 2NLFL Supplier Device Package: 2NLFL	pacchetto: 2NLFL	Azione6.320	65V	1.025GHz ~ 1.15GHz	-	6.7dB	880W	15 @ 1A, 5V	24A	250°C (TJ)	Chassis Mount	2NLFL	2NLFL
1035MP	Microsemi Corporation	TRANS RF BIPO 125W 2.5A 55FW1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.025GHz ~ 1.15GHz Noise Figure (dB Typ @ f): - Gain: 10dB ~ 10.5dB Power - Max: 125W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V Current - Collector (Ic) (Max): 2.5A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55FW-1 Supplier Device Package: 55FW-1	pacchetto: 55FW-1	Azione7.664	65V	1.025GHz ~ 1.15GHz	-	10dB ~ 10.5dB	125W	20 @ 100mA, 5V	2.5A	200°C (TJ)	Chassis Mount	55FW-1	55FW-1
2SC5415AE-TD-E	ON Semiconductor	TRANS NPN BIPO HI FREQ PCP Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 6.7GHz Noise Figure (dB Typ @ f): 1.1dB @ 1GHz Gain: 9dB Power - Max: 800mW DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 30mA, 5V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: PCP	pacchetto: TO-243AA	Azione5.136	12V	6.7GHz	1.1dB @ 1GHz	9dB	800mW	90 @ 30mA, 5V	100mA	150°C (TJ)	Surface Mount	TO-243AA	PCP
BFU520YF	NXP	TRANS RF NPN 12V 30MA 6TSSOP Transistor Type: 2 NPN (Dual) Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 10GHz Noise Figure (dB Typ @ f): 1dB @ 1.8GHz Gain: 14dB Power - Max: 450mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 8V Current - Collector (Ic) (Max): 30mA Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 Supplier Device Package: 5-TSSOP	pacchetto: 5-TSSOP, SC-70-5, SOT-353	Azione5.632	12V	10GHz	1dB @ 1.8GHz	14dB	450mW	60 @ 5mA, 8V	30mA	-40°C ~ 150°C (TJ)	Surface Mount	5-TSSOP, SC-70-5, SOT-353	5-TSSOP
AT-30511-TR1G	Broadcom Limited	TRANS NPN BIPO 5.5V 8MA SOT-143 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5.5V Frequency - Transition: - Noise Figure (dB Typ @ f): 1.1dB ~ 1.4dB @ 900MHz Gain: 14dB ~ 16dB Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 2.7V Current - Collector (Ic) (Max): 8mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-253-4, TO-253AA Supplier Device Package: SOT-143	pacchetto: TO-253-4, TO-253AA	Azione843.360	5.5V	-	1.1dB ~ 1.4dB @ 900MHz	14dB ~ 16dB	100mW	70 @ 1mA, 2.7V	8mA	150°C (TJ)	Surface Mount	TO-253-4, TO-253AA	SOT-143
AT-32011-BLKG	Broadcom Limited	TRANS NPN BIPO 5.5V 32MA SOT-143 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5.5V Frequency - Transition: - Noise Figure (dB Typ @ f): 1dB ~ 1.3dB @ 900MHz Gain: 12.5dB ~ 14dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 2.7V Current - Collector (Ic) (Max): 32mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-253-4, TO-253AA Supplier Device Package: SOT-143	pacchetto: TO-253-4, TO-253AA	Azione7.936	5.5V	-	1dB ~ 1.3dB @ 900MHz	12.5dB ~ 14dB	200mW	70 @ 2mA, 2.7V	32mA	150°C (TJ)	Surface Mount	TO-253-4, TO-253AA	SOT-143
BLT50,115	NXP	TRANS NPN 7.5V SOT223 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 470MHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 2W DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 300mA, 5V Current - Collector (Ic) (Max): 500mA Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223	pacchetto: TO-261-4, TO-261AA	Azione20.304	10V	470MHz	-	-	2W	25 @ 300mA, 5V	500mA	175°C (TJ)	Surface Mount	TO-261-4, TO-261AA	SOT-223
NE68039R-T1-A	CEL	TRANSISTOR NPN 2GHZ SOT-143R Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 10GHz Noise Figure (dB Typ @ f): 1.7dB ~ 2.6dB @ 2GHz ~ 4GHz Gain: 6.5dB ~ 11dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 6V Current - Collector (Ic) (Max): 35mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-143R Supplier Device Package: SOT-143R	pacchetto: SOT-143R	Azione2.416	10V	10GHz	1.7dB ~ 2.6dB @ 2GHz ~ 4GHz	6.5dB ~ 11dB	200mW	50 @ 10mA, 6V	35mA	150°C (TJ)	Surface Mount	SOT-143R	SOT-143R
2SC4655JCL	Panasonic Electronic Components	TRANS NPN 20VCEO 30MA SSMINI-3 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 230MHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 125mW DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 1mA, 10V Current - Collector (Ic) (Max): 30mA Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-89, SOT-490 Supplier Device Package: SSMini3-F1	pacchetto: SC-89, SOT-490	Azione36.000	20V	230MHz	-	-	125mW	110 @ 1mA, 10V	30mA	125°C (TJ)	Surface Mount	SC-89, SOT-490	SSMini3-F1
2SC48350RL	Panasonic Electronic Components	TRANS NPN 10VCEO 80MA SMINI-3 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 6GHz Noise Figure (dB Typ @ f): 1.3dB ~ 2dB @ 800MHz Gain: 11dB ~ 14dB Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 8V Current - Collector (Ic) (Max): 80mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SMini3-G1	pacchetto: SC-70, SOT-323	Azione26.304	10V	6GHz	1.3dB ~ 2dB @ 800MHz	11dB ~ 14dB	150mW	80 @ 20mA, 8V	80mA	150°C (TJ)	Surface Mount	SC-70, SOT-323	SMini3-G1
2SC5085-Y(TE85L,F)	Toshiba Semiconductor and Storage	TRANSISTOR NPN MM USM Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1.1dB @ 1GHz Gain: 11dB ~ 16.5dB Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 10V Current - Collector (Ic) (Max): 80mA Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: USM	pacchetto: SC-70, SOT-323	Azione72.000	12V	7GHz	1.1dB @ 1GHz	11dB ~ 16.5dB	100mW	120 @ 20mA, 10V	80mA	125°C (TJ)	Surface Mount	SC-70, SOT-323	USM
55GN01CA-TB-E	ON Semiconductor	TRANS NPN BIPOLAR 10V 70MA CP Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 4.5GHz Noise Figure (dB Typ @ f): 1.9dB @ 1GHz Gain: 9.5dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Current - Collector (Ic) (Max): 70mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: 3-CP	pacchetto: TO-236-3, SC-59, SOT-23-3	Azione432.000	10V	4.5GHz	1.9dB @ 1GHz	9.5dB	200mW	100 @ 10mA, 5V	70mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	3-CP
BFP 183 E7764	Infineon Technologies	TRANSISTOR NPN RF 12V SOT-143 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz Gain: 22dB Power - Max: 250mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V Current - Collector (Ic) (Max): 65mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-253-4, TO-253AA Supplier Device Package: PG-SOT143-4	pacchetto: TO-253-4, TO-253AA	Azione22.506	12V	8GHz	0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz	22dB	250mW	70 @ 15mA, 8V	65mA	150°C (TJ)	Surface Mount	TO-253-4, TO-253AA	PG-SOT143-4
MMBTH10	Fairchild/ON Semiconductor	TRANSISTOR RF NPN SOT-23 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 25V Frequency - Transition: 650MHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 225mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V Current - Collector (Ic) (Max): 50mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236)	pacchetto: TO-236-3, SC-59, SOT-23-3	Azione8.018.004	25V	650MHz	-	-	225mW	60 @ 4mA, 10V	50mA	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3 (TO-236)

BFG 235 E6327

Infineon Technologies

TRANSISTOR RF NPN 15V SOT-223

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 5.5GHz
Noise Figure (dB Typ @ f): 1.7dB @ 900MHz
Gain: 12.5dB
Power - Max: 2W
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 200mA, 8V
Current - Collector (Ic) (Max): 300mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: PG-SOT223-4

pacchetto: TO-261-4, TO-261AA

Azione4.352

15V

5.5GHz

1.7dB @ 900MHz

12.5dB

2W

75 @ 200mA, 8V

300mA

150°C (TJ)

Surface Mount

TO-261-4, TO-261AA

PG-SOT223-4

BF 770A E6327

Infineon Technologies

TRANSISTOR RF NPN 12V SOT-23

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 6GHz
Noise Figure (dB Typ @ f): 1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz
Gain: 9.5dB ~ 14.5dB
Power - Max: 300mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
Current - Collector (Ic) (Max): 90mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23-3

pacchetto: TO-236-3, SC-59, SOT-23-3

Azione5.072

12V

6GHz

1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz

9.5dB ~ 14.5dB

300mW

70 @ 30mA, 8V

90mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

PG-SOT23-3

2SA1977-T1B-A

CEL

RF TRANSISTOR PNP SOT-23

Transistor Type: PNP
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 8.5GHz
Noise Figure (dB Typ @ f): 1.5dB @ 1GHz
Gain: 12dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 8V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

pacchetto: TO-236-3, SC-59, SOT-23-3

Azione4.048

12V

8.5GHz

1.5dB @ 1GHz

12dB

200mW

20 @ 20mA, 8V

50mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

2SC4957-T1-A

CEL

RF TRANSISTOR NPN SOT-143

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 6V
Frequency - Transition: 12GHz
Noise Figure (dB Typ @ f): 1.5dB @ 2GHz
Gain: 11dB
Power - Max: 180mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 3V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Supplier Device Package: SOT-143

pacchetto: TO-253-4, TO-253AA

Azione3.344

6V

12GHz

1.5dB @ 2GHz

11dB

180mW

75 @ 10mA, 3V

30mA

150°C (TJ)

Surface Mount

TO-253-4, TO-253AA

SOT-143

MS2393

Microsemi Corporation

TRANS RF BIPO 87.5W 11A M138

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 1.025GHz ~ 1.15GHz
Noise Figure (dB Typ @ f): -
Gain: 8.2dB
Power - Max: 583W
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 300mA, 5V
Current - Collector (Ic) (Max): 11A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M138
Supplier Device Package: M138

pacchetto: M138

Azione3.104

65V

1.025GHz ~ 1.15GHz

-

8.2dB

583W

5 @ 300mA, 5V

11A

200°C (TJ)

Chassis Mount

M138

NE85633-T1B-R25-A

CEL

RF TRANSISTOR NPN SOT-23

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Gain: 11.5dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 20mA, 10V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

pacchetto: TO-236-3, SC-59, SOT-23-3

Azione3.472

12V

7GHz

1.1dB @ 1GHz

11.5dB

200mW

125 @ 20mA, 10V

100mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

NESG7030M04-A

CEL

DISCRETE RF DIODE

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 4.3V
Frequency - Transition: 5.8GHz
Noise Figure (dB Typ @ f): 0.5dB ~ 0.75dB @ 2GHz ~ 5.8GHz
Gain: 14dB ~ 21dB
Power - Max: 125mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 5mA, 2V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-343F
Supplier Device Package: M04

pacchetto: SOT-343F

Azione5.280

4.3V

5.8GHz

0.5dB ~ 0.75dB @ 2GHz ~ 5.8GHz

14dB ~ 21dB

125mW

200 @ 5mA, 2V

30mA

150°C (TJ)

Surface Mount

SOT-343F

M04

EC3H02BA-TL-H

ON Semiconductor

TRANS NPN 10V 70A ECSP1006-3

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1dB @ 1GHz
Gain: 8.5dB
Power - Max: 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 5V
Current - Collector (Ic) (Max): 70mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Supplier Device Package: 3-ECSP1006

pacchetto: 3-XFDFN

Azione5.520

10V

7GHz

1dB @ 1GHz

8.5dB

100mW

120 @ 20mA, 5V

70mA

150°C (TJ)

Surface Mount

3-XFDFN

3-ECSP1006

UPA814T-A

CEL

TRANSISTOR NPN 9GHZ SOT-363

Transistor Type: 2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max): 6V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.5dB @ 2GHz
Gain: -
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 3mA, 1V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: 6-SO

pacchetto: 6-TSSOP, SC-88, SOT-363

Azione2.912

6V

9GHz

1.5dB @ 2GHz

-

200mW

80 @ 3mA, 1V

100mA

150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

6-SO

NE85633-T1B-R24-A

CEL

RF TRANSISTOR NPN SOT-23

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Gain: 11.5dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 10V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

pacchetto: TO-236-3, SC-59, SOT-23-3

Azione2.032

12V

7GHz

1.1dB @ 1GHz

11.5dB

200mW

80 @ 20mA, 10V

100mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

NE97733-A

CEL

RF TRANSISTOR PNP SOT-23

Transistor Type: PNP
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 8.5GHz
Noise Figure (dB Typ @ f): 1.5dB @ 1GHz
Gain: 12dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 8V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

pacchetto: TO-236-3, SC-59, SOT-23-3

Azione4.928

12V

8.5GHz

1.5dB @ 1GHz

12dB

200mW

20 @ 20mA, 8V

50mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

NE85639R-T1-A

CEL

TRANSISTOR NPN 1GHZ SOT-143R

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.5dB ~ 2.1dB @ 1GHz
Gain: 13.5dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-143R
Supplier Device Package: SOT-143R

pacchetto: SOT-143R

Azione3.584

12V

9GHz

1.5dB ~ 2.1dB @ 1GHz

13.5dB

200mW

50 @ 20mA, 10V

100mA

150°C (TJ)

Surface Mount

SOT-143R

MPS5179

ON Semiconductor

TRANS NPN RF SS 12V TO92

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 2GHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

pacchetto: TO-226-3, TO-92-3 (TO-226AA)

Azione62.244

12V

2GHz

-

200mW

25 @ 3mA, 1V

50mA

-

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

BFP410H6327XTSA1

Infineon Technologies

TRANS RF NPN 25GHZ 4.5V SOT343

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 5V
Frequency - Transition: 25GHz
Noise Figure (dB Typ @ f): 1.2dB @ 2GHz
Gain: 21.5dB
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 13mA, 2V
Current - Collector (Ic) (Max): 40mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: SOT-343

pacchetto: SC-82A, SOT-343

Azione4.000

5V

25GHz

1.2dB @ 2GHz

21.5dB

150mW

60 @ 13mA, 2V

40mA

150°C (TJ)

Surface Mount

SC-82A, SOT-343

SOT-343

TCS800

Microsemi Corporation

TRANS RF BIPO 1944W 50A 55SM1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 1.03GHz
Noise Figure (dB Typ @ f): -
Gain: 8dB ~ 9dB
Power - Max: 1944W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 5V
Current - Collector (Ic) (Max): 50A
Operating Temperature: 230°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55SM
Supplier Device Package: 55SM

pacchetto: 55SM

Azione2.544

65V

1.03GHz

-

8dB ~ 9dB

1944W

20 @ 5A, 5V

50A

230°C (TJ)

Chassis Mount

55SM

MAPRST0912-350

M/A-Com Technology Solutions

TRANS NPN 350W 960MHZ-1215MHZ

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 1.215GHz
Noise Figure (dB Typ @ f): -
Gain: 9.4dB
Power - Max: 350W
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): 32.5A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: -
Supplier Device Package: -

pacchetto: -

Azione7.312

65V

1.215GHz

-

9.4dB

350W

-

32.5A

200°C (TJ)

Chassis Mount

-

MS2552

Microsemi Corporation

TRANS RF BIPO 880W 24A M112

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 1.025GHz ~ 1.15GHz
Noise Figure (dB Typ @ f): -
Gain: 6.7dB
Power - Max: 880W
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 5V
Current - Collector (Ic) (Max): 24A
Operating Temperature: 250°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 2NLFL
Supplier Device Package: 2NLFL

pacchetto: 2NLFL

Azione6.320

65V

1.025GHz ~ 1.15GHz

-

6.7dB

880W

15 @ 1A, 5V

24A

250°C (TJ)

Chassis Mount

2NLFL

1035MP

Microsemi Corporation

TRANS RF BIPO 125W 2.5A 55FW1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 1.025GHz ~ 1.15GHz
Noise Figure (dB Typ @ f): -
Gain: 10dB ~ 10.5dB
Power - Max: 125W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V
Current - Collector (Ic) (Max): 2.5A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55FW-1
Supplier Device Package: 55FW-1

pacchetto: 55FW-1

Azione7.664

65V

1.025GHz ~ 1.15GHz

-

10dB ~ 10.5dB

125W

20 @ 100mA, 5V

2.5A

200°C (TJ)

Chassis Mount

55FW-1

2SC5415AE-TD-E

ON Semiconductor

TRANS NPN BIPO HI FREQ PCP

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 6.7GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Gain: 9dB
Power - Max: 800mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 30mA, 5V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: PCP

pacchetto: TO-243AA

Azione5.136

12V

6.7GHz

1.1dB @ 1GHz

9dB

800mW

90 @ 30mA, 5V

100mA

150°C (TJ)

Surface Mount

TO-243AA

PCP

BFU520YF

NXP

TRANS RF NPN 12V 30MA 6TSSOP

Transistor Type: 2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 1dB @ 1.8GHz
Gain: 14dB
Power - Max: 450mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 8V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Supplier Device Package: 5-TSSOP

pacchetto: 5-TSSOP, SC-70-5, SOT-353

Azione5.632

12V

10GHz

1dB @ 1.8GHz

14dB

450mW

60 @ 5mA, 8V

30mA

-40°C ~ 150°C (TJ)

Surface Mount

5-TSSOP, SC-70-5, SOT-353

5-TSSOP

AT-30511-TR1G

Broadcom Limited

TRANS NPN BIPO 5.5V 8MA SOT-143

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 5.5V
Frequency - Transition: -
Noise Figure (dB Typ @ f): 1.1dB ~ 1.4dB @ 900MHz
Gain: 14dB ~ 16dB
Power - Max: 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 2.7V
Current - Collector (Ic) (Max): 8mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Supplier Device Package: SOT-143

pacchetto: TO-253-4, TO-253AA

Azione843.360

5.5V

-

1.1dB ~ 1.4dB @ 900MHz

14dB ~ 16dB

100mW

70 @ 1mA, 2.7V

8mA

150°C (TJ)

Surface Mount

TO-253-4, TO-253AA

SOT-143

AT-32011-BLKG

Broadcom Limited

TRANS NPN BIPO 5.5V 32MA SOT-143

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 5.5V
Frequency - Transition: -
Noise Figure (dB Typ @ f): 1dB ~ 1.3dB @ 900MHz
Gain: 12.5dB ~ 14dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 2.7V
Current - Collector (Ic) (Max): 32mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Supplier Device Package: SOT-143

pacchetto: TO-253-4, TO-253AA

Azione7.936

5.5V

-

1dB ~ 1.3dB @ 900MHz

12.5dB ~ 14dB

200mW

70 @ 2mA, 2.7V

32mA

150°C (TJ)

Surface Mount

TO-253-4, TO-253AA

SOT-143

BLT50,115

NXP

TRANS NPN 7.5V SOT223

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 470MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 2W
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 300mA, 5V
Current - Collector (Ic) (Max): 500mA
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223

pacchetto: TO-261-4, TO-261AA

Azione20.304

10V

470MHz

-

2W

25 @ 300mA, 5V

500mA

175°C (TJ)

Surface Mount

TO-261-4, TO-261AA

SOT-223

NE68039R-T1-A

CEL

TRANSISTOR NPN 2GHZ SOT-143R

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 1.7dB ~ 2.6dB @ 2GHz ~ 4GHz
Gain: 6.5dB ~ 11dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 6V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-143R
Supplier Device Package: SOT-143R

pacchetto: SOT-143R

Azione2.416

10V

10GHz

1.7dB ~ 2.6dB @ 2GHz ~ 4GHz

6.5dB ~ 11dB

200mW

50 @ 10mA, 6V

35mA

150°C (TJ)

Surface Mount

SOT-143R

2SC4655JCL

Panasonic Electronic Components

TRANS NPN 20VCEO 30MA SSMINI-3

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 230MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 125mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 1mA, 10V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Supplier Device Package: SSMini3-F1

pacchetto: SC-89, SOT-490

Azione36.000

20V

230MHz

-

125mW

110 @ 1mA, 10V

30mA

125°C (TJ)

Surface Mount

SC-89, SOT-490

SSMini3-F1

2SC48350RL

Panasonic Electronic Components

TRANS NPN 10VCEO 80MA SMINI-3

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 6GHz
Noise Figure (dB Typ @ f): 1.3dB ~ 2dB @ 800MHz
Gain: 11dB ~ 14dB
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 8V
Current - Collector (Ic) (Max): 80mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SMini3-G1

pacchetto: SC-70, SOT-323

Azione26.304

10V

6GHz

1.3dB ~ 2dB @ 800MHz

11dB ~ 14dB

150mW

80 @ 20mA, 8V

80mA

150°C (TJ)

Surface Mount

SC-70, SOT-323

SMini3-G1

2SC5085-Y(TE85L,F)

Toshiba Semiconductor and Storage

TRANSISTOR NPN MM USM

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Gain: 11dB ~ 16.5dB
Power - Max: 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 10V
Current - Collector (Ic) (Max): 80mA
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: USM

pacchetto: SC-70, SOT-323

Azione72.000

12V

7GHz

1.1dB @ 1GHz

11dB ~ 16.5dB

100mW

120 @ 20mA, 10V

80mA

125°C (TJ)

Surface Mount

SC-70, SOT-323

USM

55GN01CA-TB-E

ON Semiconductor

TRANS NPN BIPOLAR 10V 70MA CP

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 4.5GHz
Noise Figure (dB Typ @ f): 1.9dB @ 1GHz
Gain: 9.5dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Current - Collector (Ic) (Max): 70mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: 3-CP

pacchetto: TO-236-3, SC-59, SOT-23-3

Azione432.000

10V

4.5GHz

1.9dB @ 1GHz

9.5dB

200mW

100 @ 10mA, 5V

70mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

3-CP

BFP 183 E7764

Infineon Technologies

TRANSISTOR NPN RF 12V SOT-143

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz
Gain: 22dB
Power - Max: 250mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V
Current - Collector (Ic) (Max): 65mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Supplier Device Package: PG-SOT143-4

pacchetto: TO-253-4, TO-253AA

Azione22.506

12V

8GHz

0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz

22dB

250mW

70 @ 15mA, 8V

65mA

150°C (TJ)

Surface Mount

TO-253-4, TO-253AA

PG-SOT143-4

MMBTH10

Fairchild/ON Semiconductor

TRANSISTOR RF NPN SOT-23

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 25V
Frequency - Transition: 650MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 225mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)

pacchetto: TO-236-3, SC-59, SOT-23-3

Azione8.018.004

25V

650MHz

-

225mW

60 @ 4mA, 10V

50mA

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3 (TO-236)