Pagina 37 - Transistor - Bipolari (BJT) - RF | Dispositivi a semiconduttore discreti | Heisener Electronics
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Transistor - Bipolari (BJT) - RF

Record 1.633
Pagina  37/59
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Voltage - Collector Emitter Breakdown (Max)
Frequency - Transition
Noise Figure (dB Typ @ f)
Gain
Power - Max
DC Current Gain (hFE) (Min) @ Ic, Vce
Current - Collector (Ic) (Max)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
BFP460H6433XTMA1
Infineon Technologies

TRANS RF NPN 4.5V 70MA SOT343

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 5.8V
  • Frequency - Transition: 22GHz
  • Noise Figure (dB Typ @ f): 0.7dB ~ 1.2dB @ 100MHz ~ 3GHz
  • Gain: 12.5dB ~ 26.5dB
  • Power - Max: 230mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 20mA, 3V
  • Current - Collector (Ic) (Max): 70mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: PG-SOT343-4
pacchetto: SC-82A, SOT-343
Azione7.904
5.8V
22GHz
0.7dB ~ 1.2dB @ 100MHz ~ 3GHz
12.5dB ~ 26.5dB
230mW
90 @ 20mA, 3V
70mA
150°C (TJ)
Surface Mount
SC-82A, SOT-343
PG-SOT343-4
BFP740E6327HTSA1
Infineon Technologies

TRANSISTOR RF NPN 30MA SOT-343

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 4.7V
  • Frequency - Transition: 42GHz
  • Noise Figure (dB Typ @ f): 0.5dB ~ 0.85dB @ 1.8GHz ~ 6GHz
  • Gain: 27dB
  • Power - Max: 160mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 25mA, 3V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: PG-SOT343-4
pacchetto: SC-82A, SOT-343
Azione4.096
4.7V
42GHz
0.5dB ~ 0.85dB @ 1.8GHz ~ 6GHz
27dB
160mW
160 @ 25mA, 3V
30mA
150°C (TJ)
Surface Mount
SC-82A, SOT-343
PG-SOT343-4
BFG 235 E6327
Infineon Technologies

TRANSISTOR RF NPN 15V SOT-223

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 5.5GHz
  • Noise Figure (dB Typ @ f): 1.7dB @ 900MHz
  • Gain: 12.5dB
  • Power - Max: 2W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 200mA, 8V
  • Current - Collector (Ic) (Max): 300mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: PG-SOT223-4
pacchetto: TO-261-4, TO-261AA
Azione4.352
15V
5.5GHz
1.7dB @ 900MHz
12.5dB
2W
75 @ 200mA, 8V
300mA
150°C (TJ)
Surface Mount
TO-261-4, TO-261AA
PG-SOT223-4
MRF8372G
Microsemi Corporation

TRANS NPN 16V 200MA SO8

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 16V
  • Frequency - Transition: 870MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 8dB ~ 9.5dB
  • Power - Max: 2.2W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 5V
  • Current - Collector (Ic) (Max): 200mA
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione3.312
16V
870MHz
-
8dB ~ 9.5dB
2.2W
30 @ 50mA, 5V
200mA
-
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
JAN2N4957
Microsemi Corporation

TRANS PNP 30V 30MA TO72

  • Transistor Type: PNP
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): 3.5dB @ 450MHz
  • Gain: 25dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-72-3 Metal Can
  • Supplier Device Package: TO-72
pacchetto: TO-72-3 Metal Can
Azione2.592
30V
-
3.5dB @ 450MHz
25dB
200mW
30 @ 5mA, 10V
30mA
-65°C ~ 200°C (TJ)
Through Hole
TO-72-3 Metal Can
TO-72
hot 2SC5509-T2-A
CEL

RF TRANSISTOR NPN SOT-343F

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 3.3V
  • Frequency - Transition: 15GHz
  • Noise Figure (dB Typ @ f): 1.2dB @ 2GHz
  • Gain: 14dB
  • Power - Max: 190mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 2V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-343F
  • Supplier Device Package: SOT-343
pacchetto: SOT-343F
Azione286.320
3.3V
15GHz
1.2dB @ 2GHz
14dB
190mW
50 @ 10mA, 2V
100mA
150°C (TJ)
Surface Mount
SOT-343F
SOT-343
MAPR-002731-115M00
M/A-Com Technology Solutions

115W 2.7 - 3.1 GHZ 10% 36V

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: 8.06dB ~ 8.45dB
  • Power - Max: 115W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione3.360
65V
-
-
8.06dB ~ 8.45dB
115W
-
-
200°C (TJ)
Chassis Mount
-
-
0912-25
Microsemi Corporation

TRANS RF BIPO 125W 2.5A 55CT1

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 55V
  • Frequency - Transition: 960MHz ~ 1.215GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 8.5dB ~ 10dB
  • Power - Max: 125W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 300mA, 5V
  • Current - Collector (Ic) (Max): 2.5A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55CT
  • Supplier Device Package: 55CT
pacchetto: 55CT
Azione3.328
55V
960MHz ~ 1.215GHz
-
8.5dB ~ 10dB
125W
10 @ 300mA, 5V
2.5A
200°C (TJ)
Chassis Mount
55CT
55CT
NE85639-T1-A
CEL

RF TRANSISTOR NPN SOT-143

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 9GHz
  • Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
  • Gain: 13dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-253-4, TO-253AA
  • Supplier Device Package: SOT-143
pacchetto: TO-253-4, TO-253AA
Azione4.160
12V
9GHz
1.1dB @ 1GHz
13dB
200mW
50 @ 20mA, 10V
100mA
150°C (TJ)
Surface Mount
TO-253-4, TO-253AA
SOT-143
MPS5179_D75Z
Fairchild/ON Semiconductor

TRANS RF NPN 12V 50MA TO-92

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 2GHz
  • Noise Figure (dB Typ @ f): 5dB @ 200MHz
  • Gain: 15dB
  • Power - Max: 350mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Azione4.800
12V
2GHz
5dB @ 200MHz
15dB
350mW
25 @ 3mA, 1V
50mA
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
hot AT-42035G
Broadcom Limited

TRANS NPN BIPO 12V 80MA 35-SMD

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 8GHz
  • Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 2GHz ~ 4GHz
  • Gain: 10dB ~ 13.5dB
  • Power - Max: 600mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 35mA, 8V
  • Current - Collector (Ic) (Max): 80mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD (35 micro-X)
  • Supplier Device Package: 35 micro-X
pacchetto: 4-SMD (35 micro-X)
Azione9.492
12V
8GHz
2dB ~ 3dB @ 2GHz ~ 4GHz
10dB ~ 13.5dB
600mW
30 @ 35mA, 8V
80mA
150°C (TJ)
Surface Mount
4-SMD (35 micro-X)
35 micro-X
hot NE85630-T1-A
CEL

RF TRANSISTOR NPN SOT-323

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 4.5GHz
  • Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
  • Gain: 9dB
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 7mA, 3V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323
pacchetto: SC-70, SOT-323
Azione109.800
12V
4.5GHz
1.2dB @ 1GHz
9dB
150mW
40 @ 7mA, 3V
100mA
150°C (TJ)
Surface Mount
SC-70, SOT-323
SOT-323
hot HFA3128B
Intersil

IC TRANSISTOR ARRAY PNP 16-SOIC

  • Transistor Type: 5 PNP
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 5.5GHz
  • Noise Figure (dB Typ @ f): 3.5dB @ 1GHz
  • Gain: -
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 2V
  • Current - Collector (Ic) (Max): 65mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 16-SOIC
pacchetto: 16-SOIC (0.154", 3.90mm Width)
Azione7.152
15V
5.5GHz
3.5dB @ 1GHz
-
150mW
20 @ 10mA, 2V
65mA
150°C (TJ)
Surface Mount
16-SOIC (0.154", 3.90mm Width)
16-SOIC
NE68130-T1
CEL

TRANS NPN 1GHZ SOT-323

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 7GHz
  • Noise Figure (dB Typ @ f): 1.5dB ~ 1.6dB @ 1GHz ~ 2GHz
  • Gain: 9dB ~ 13.5dB
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 7mA, 3V
  • Current - Collector (Ic) (Max): 65mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323
pacchetto: SC-70, SOT-323
Azione7.056
10V
7GHz
1.5dB ~ 1.6dB @ 1GHz ~ 2GHz
9dB ~ 13.5dB
150mW
40 @ 7mA, 3V
65mA
150°C (TJ)
Surface Mount
SC-70, SOT-323
SOT-323
BFR92AW,115
NXP

TRANS NPN 15V 5GHZ SOT323

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 5GHz
  • Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 1GHz ~ 2GHz
  • Gain: -
  • Power - Max: 300mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 15mA, 10V
  • Current - Collector (Ic) (Max): 25mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323-3
pacchetto: SC-70, SOT-323
Azione2.560
15V
5GHz
2dB ~ 3dB @ 1GHz ~ 2GHz
-
300mW
65 @ 15mA, 10V
25mA
150°C (TJ)
Surface Mount
SC-70, SOT-323
SOT-323-3
BFP420H6740XTSA1
Infineon Technologies

TRANS RF NPN 25GHZ 4.5V SOT343

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 5V
  • Frequency - Transition: 25GHz
  • Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
  • Gain: 21dB
  • Power - Max: 160mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 4V
  • Current - Collector (Ic) (Max): 35mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: SOT-343
pacchetto: SC-82A, SOT-343
Azione4.880
5V
25GHz
1.1dB @ 1.8GHz
21dB
160mW
60 @ 20mA, 4V
35mA
150°C (TJ)
Surface Mount
SC-82A, SOT-343
SOT-343
BFR35APE6327HTSA1
Infineon Technologies

TRANSISTOR RF NPN 15V SOT-23

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 5GHz
  • Noise Figure (dB Typ @ f): 1.4dB ~ 2dB @ 900MHz ~ 1.8GHz
  • Gain: 10.5dB ~ 16dB
  • Power - Max: 280mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V
  • Current - Collector (Ic) (Max): 45mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: PG-SOT23-3
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione3.728
15V
5GHz
1.4dB ~ 2dB @ 900MHz ~ 1.8GHz
10.5dB ~ 16dB
280mW
70 @ 15mA, 8V
45mA
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
PG-SOT23-3
TAN300
Microsemi Corporation

TRANS RF BIPO 65V 20A 55KT1

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: 960MHz ~ 1.215GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 6.6dB
  • Power - Max: 1166W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1mA, 5V
  • Current - Collector (Ic) (Max): 20A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55KT
  • Supplier Device Package: 55KT
pacchetto: 55KT
Azione3.744
65V
960MHz ~ 1.215GHz
-
6.6dB
1166W
10 @ 1mA, 5V
20A
200°C (TJ)
Chassis Mount
55KT
55KT
hot 2SC5227A-5-TB-E
ON Semiconductor

TRANS NPN BIPO VHF-UHF CP

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 7GHz
  • Noise Figure (dB Typ @ f): 1dB @ 1GHz
  • Gain: 12dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 20mA, 5V
  • Current - Collector (Ic) (Max): 70mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: 3-CP
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione2.000
10V
7GHz
1dB @ 1GHz
12dB
200mW
135 @ 20mA, 5V
70mA
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
3-CP
MRF422MP
MACOM Technology Solutions

TRANSISTOR, 150W, 30MHZ,28V,MATC

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Frequency - Transition: 30MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 10dB ~ 13dB
  • Power - Max: 290W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5A, 5V
  • Current - Collector (Ic) (Max): 20A
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Package / Case: 211-11, Style 1
  • Supplier Device Package: 211-11, Style 1
pacchetto: -
Request a Quote
40V
30MHz
-
10dB ~ 13dB
290W
15 @ 5A, 5V
20A
-
Chassis Mount
211-11, Style 1
211-11, Style 1
MAPH-008780-000000
MACOM Technology Solutions

TRANSISTOR

  • Transistor Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
HFA3127B96-HC
Harris Corporation

RF 0.037A, 5-ELEMENT, ULTRA HIGH

  • Transistor Type: 5 NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 8GHz
  • Noise Figure (dB Typ @ f): 3.5dB @ 1GHz
  • Gain: -
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 2V
  • Current - Collector (Ic) (Max): 65mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 16-SOIC
pacchetto: -
Request a Quote
12V
8GHz
3.5dB @ 1GHz
-
150mW
40 @ 10mA, 2V
65mA
150°C (TJ)
Surface Mount
16-SOIC (0.154", 3.90mm Width)
16-SOIC
2731-200P
Microsemi Corporation

RF TRANS 3.1GHZ MODULE

  • Transistor Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Frequency - Transition: 2.7GHz ~ 3.1GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 8.7dB
  • Power - Max: -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
pacchetto: -
Request a Quote
-
2.7GHz ~ 3.1GHz
-
8.7dB
-
-
-
-
Chassis Mount
Module
Module
BFP196WE6327
Infineon Technologies

RF TRANSISTOR, L BAND, NPN

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 7.5GHz
  • Noise Figure (dB Typ @ f): 1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz
  • Gain: 12.5dB ~ 19dB
  • Power - Max: 700mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 8V
  • Current - Collector (Ic) (Max): 150mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: PG-SOT343-4
pacchetto: -
Request a Quote
12V
7.5GHz
1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz
12.5dB ~ 19dB
700mW
70 @ 50mA, 8V
150mA
150°C (TJ)
Surface Mount
SC-82A, SOT-343
PG-SOT343-4
2SC4228-A
CEL

RF TRANS NPN 10V 8GHZ SC70-3

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 8GHz
  • Noise Figure (dB Typ @ f): 1.9dB @ 2GHz
  • Gain: 7.5dB
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 3V
  • Current - Collector (Ic) (Max): 35mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SC-70-3
pacchetto: -
Request a Quote
10V
8GHz
1.9dB @ 2GHz
7.5dB
150mW
50 @ 5mA, 3V
35mA
150°C (TJ)
Surface Mount
SC-70, SOT-323
SC-70-3
NE851M13-T3-A
CEL

TRANS NPN LOW PRO M13 SMD

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 5.5V
  • Frequency - Transition: 4.5GHz
  • Noise Figure (dB Typ @ f): 1.9dB ~ 2.5dB @ 2GHz
  • Gain: 4dB ~ 5.5dB @ 2GHZ
  • Power - Max: 140mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 1V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: SOT-3
  • Supplier Device Package: M13
pacchetto: -
Request a Quote
5.5V
4.5GHz
1.9dB ~ 2.5dB @ 2GHz
4dB ~ 5.5dB @ 2GHZ
140mW
100 @ 5mA, 1V
100mA
-
Surface Mount
SOT-3
M13
2SD2228-T1-A
Renesas Electronics Corporation

SMALL SIGNAL BIPOLAR TRANSTR NPN

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 16V
  • Frequency - Transition: 50MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 100mA, 1V
  • Current - Collector (Ic) (Max): 500mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SC-70
pacchetto: -
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16V
50MHz
-
-
150mW
110 @ 100mA, 1V
500mA
150°C (TJ)
Surface Mount
SC-70, SOT-323
SC-70
BFP450
Infineon Technologies

RF SMALL SIGNAL BIPOLAR TRANSIST

  • Transistor Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
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