Pagina 59 - Transistor - Bipolari (BJT) - RF | Dispositivi a semiconduttore discreti

Numero di parte	Produttore	Descrizione	pacchetto	Azione	Voltage - Collector Emitter Breakdown (Max)	Frequency - Transition	Noise Figure (dB Typ @ f)	Gain	Power - Max	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector (Ic) (Max)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
JANTX2N2857UB	Microsemi Corporation	TRANS NPN 15V 0.04A Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: - Noise Figure (dB Typ @ f): 4.5dB @ 450MHz Gain: 21dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3mA, 1V Current - Collector (Ic) (Max): 40mA Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: UB	pacchetto: 3-SMD, No Lead	Azione6.368	15V	-	4.5dB @ 450MHz	21dB	200mW	30 @ 3mA, 1V	40mA	-65°C ~ 200°C (TJ)	Surface Mount	3-SMD, No Lead	UB
AT-41535G	Broadcom Limited	TRANSISTOR NPN BIPOLAR 35MICRO-X Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 1.3dB ~ 3dB @ 1GHz ~ 4GHz Gain: 10dB ~ 18dB Power - Max: 500mW DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 8V Current - Collector (Ic) (Max): 60mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD (35 micro-X) Supplier Device Package: 35 micro-X	pacchetto: 4-SMD (35 micro-X)	Azione5.488	12V	8GHz	1.3dB ~ 3dB @ 1GHz ~ 4GHz	10dB ~ 18dB	500mW	30 @ 10mA, 8V	60mA	150°C (TJ)	Surface Mount	4-SMD (35 micro-X)	35 micro-X
MPSH17_D75Z	Fairchild/ON Semiconductor	TRANS NPN 15V TO-92 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 800MHz Noise Figure (dB Typ @ f): 6dB @ 200MHz Gain: 24dB Power - Max: 350mW DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 5mA, 10V Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Azione2.240	15V	800MHz	6dB @ 200MHz	24dB	350mW	25 @ 5mA, 10V	-	-	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
NESG2046M33-T3-A	CEL	TRANS NPN 2GHZ M33 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5V Frequency - Transition: 18GHz Noise Figure (dB Typ @ f): 0.8dB ~ 1.5dB @ 2GHz Gain: 9.5dB ~ 11.5dB Power - Max: 130mW DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 2mA, 1V Current - Collector (Ic) (Max): 40mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, Flat Leads Supplier Device Package: 3-SuperMiniMold (M33)	pacchetto: 3-SMD, Flat Leads	Azione2.384	5V	18GHz	0.8dB ~ 1.5dB @ 2GHz	9.5dB ~ 11.5dB	130mW	140 @ 2mA, 1V	40mA	150°C (TJ)	Surface Mount	3-SMD, Flat Leads	3-SuperMiniMold (M33)
NE97733-T1B-A	CEL	RF TRANSISTOR NPN SOT-23 Transistor Type: PNP Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8.5GHz Noise Figure (dB Typ @ f): 1.5dB @ 1GHz Gain: 12dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 8V Current - Collector (Ic) (Max): 50mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	pacchetto: TO-236-3, SC-59, SOT-23-3	Azione46.560	12V	8.5GHz	1.5dB @ 1GHz	12dB	200mW	20 @ 20mA, 8V	50mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23
UPA814T-T1-A	CEL	TRANSISTOR NPN FT=9GHZ SOT-36 Transistor Type: 2 NPN (Dual) Voltage - Collector Emitter Breakdown (Max): 6V Frequency - Transition: 9GHz Noise Figure (dB Typ @ f): 1.5dB @ 2GHz Gain: - Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 3mA, 1V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: 6-SO	pacchetto: 6-TSSOP, SC-88, SOT-363	Azione7.392	6V	9GHz	1.5dB @ 2GHz	-	200mW	80 @ 3mA, 1V	100mA	150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	6-SO
0910-60M	Microsemi Corporation	TRAN RF BIPO 180W 1000MHZ 55AW Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 890MHz ~ 1GHz Noise Figure (dB Typ @ f): - Gain: 8dB ~ 8.5dB Power - Max: 180W DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): 8A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55AW Supplier Device Package: 55AW	pacchetto: 55AW	Azione2.656	65V	890MHz ~ 1GHz	-	8dB ~ 8.5dB	180W	-	8A	200°C (TJ)	Chassis Mount	55AW	55AW
MT3S20P(TE12L,F)	Toshiba Semiconductor and Storage	TRANS RF NPN 12V 1GHZ PW-MINI Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1.45dB @ 1GHz Gain: 16.5dB Power - Max: 1.8W DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V Current - Collector (Ic) (Max): 80mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: PW-MINI	pacchetto: TO-243AA	Azione23.856	12V	7GHz	1.45dB @ 1GHz	16.5dB	1.8W	100 @ 50mA, 5V	80mA	150°C (TJ)	Surface Mount	TO-243AA	PW-MINI
CP681-MPSH81-CM	Central Semiconductor Corp	RF TRANS PNP 20V 600MHZ DIE Transistor Type: PNP Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 600MHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Current - Collector (Ic) (Max): 50mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	pacchetto: -	Request a Quote	20V	600MHz	-	-	-	60 @ 5mA, 10V	50mA	-55°C ~ 150°C (TJ)	Surface Mount	Die	Die