Pagina 7 - Transistor - Bipolari (BJT) - RF | Dispositivi a semiconduttore discreti | Heisener Electronics
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Transistor - Bipolari (BJT) - RF

Record 1.249
Pagina  7/42
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Voltage - Collector Emitter Breakdown (Max)
Frequency - Transition
Noise Figure (dB Typ @ f)
Gain
Power - Max
DC Current Gain (hFE) (Min) @ Ic, Vce
Current - Collector (Ic) (Max)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
NE68130-T1-R34-A
CEL

SAME AS 2SC4227 NPN SILICON AMPL

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 7GHz
  • Noise Figure (dB Typ @ f): 1.4dB @ 1GHz
  • Gain: 9dB
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 7mA, 3V
  • Current - Collector (Ic) (Max): 65mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323
pacchetto: SC-70, SOT-323
Azione3.536
10V
7GHz
1.4dB @ 1GHz
9dB
150mW
40 @ 7mA, 3V
65mA
150°C (TJ)
Surface Mount
SC-70, SOT-323
SOT-323
2N2857UB
Microsemi Corporation

TRANS NPN 15V 0.04A

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): 4.5dB @ 450MHz
  • Gain: 21dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3mA, 1V
  • Current - Collector (Ic) (Max): 40mA
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, No Lead
  • Supplier Device Package: UB
pacchetto: 3-SMD, No Lead
Azione3.936
15V
-
4.5dB @ 450MHz
21dB
200mW
30 @ 3mA, 1V
40mA
-65°C ~ 200°C (TJ)
Surface Mount
3-SMD, No Lead
UB
MAPR-002731-115M00
M/A-Com Technology Solutions

115W 2.7 - 3.1 GHZ 10% 36V

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: 8.06dB ~ 8.45dB
  • Power - Max: 115W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione3.360
65V
-
-
8.06dB ~ 8.45dB
115W
-
-
200°C (TJ)
Chassis Mount
-
-
0912-25
Microsemi Corporation

TRANS RF BIPO 125W 2.5A 55CT1

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 55V
  • Frequency - Transition: 960MHz ~ 1.215GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 8.5dB ~ 10dB
  • Power - Max: 125W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 300mA, 5V
  • Current - Collector (Ic) (Max): 2.5A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55CT
  • Supplier Device Package: 55CT
pacchetto: 55CT
Azione3.328
55V
960MHz ~ 1.215GHz
-
8.5dB ~ 10dB
125W
10 @ 300mA, 5V
2.5A
200°C (TJ)
Chassis Mount
55CT
55CT
MS2472
Microsemi Corporation

TRANS RF BIPO 1350W 40A M112

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: 1.025GHz ~ 1.15GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 5.6dB
  • Power - Max: 1350W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 250mA, 5V
  • Current - Collector (Ic) (Max): 40A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M112
  • Supplier Device Package: M112
pacchetto: M112
Azione2.864
65V
1.025GHz ~ 1.15GHz
-
5.6dB
1350W
5 @ 250mA, 5V
40A
200°C (TJ)
Chassis Mount
M112
M112
hot NE68033-T1B-A
CEL

RF TRANSISTOR NPN SOT-23

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 10GHz
  • Noise Figure (dB Typ @ f): 1.8dB @ 2GHz
  • Gain: 9dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 6V
  • Current - Collector (Ic) (Max): 35mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione193.200
10V
10GHz
1.8dB @ 2GHz
9dB
200mW
50 @ 10mA, 6V
35mA
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
MPS5179RLRAG
ON Semiconductor

TRANSISTOR NPN RF BIPO 12V TO-92

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 2GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 200W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Azione5.136
12V
2GHz
-
-
200W
25 @ 3mA, 1V
50mA
-
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
BF959ZL1
ON Semiconductor

TRANS RF NPN 20V 100MA TO-92

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 700MHz
  • Noise Figure (dB Typ @ f): 3dB @ 200MHz
  • Gain: -
  • Power - Max: 625mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Azione6.416
20V
700MHz
3dB @ 200MHz
-
625mW
40 @ 20mA, 10V
100mA
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
BF959RL1G
ON Semiconductor

TRANS RF NPN 20V 100MA TO-92

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 700MHz
  • Noise Figure (dB Typ @ f): 3dB @ 200MHz
  • Gain: -
  • Power - Max: 625mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Azione6.544
20V
700MHz
3dB @ 200MHz
-
625mW
40 @ 20mA, 10V
100mA
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
AT-41532-TR2G
Broadcom Limited

TRANS NPN BIPO 12V 50MA SOT-323

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): 1dB ~ 1.9dB @ 900MHz ~ 2.4GHz
  • Gain: 9dB ~ 15.5dB
  • Power - Max: 225mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SC-70-3
pacchetto: SC-70, SOT-323
Azione6.720
12V
-
1dB ~ 1.9dB @ 900MHz ~ 2.4GHz
9dB ~ 15.5dB
225mW
30 @ 5mA, 5V
50mA
150°C (TJ)
Surface Mount
SC-70, SOT-323
SC-70-3
NE85630-R25-A
CEL

RF TRANSISTOR NPN SOT-323

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 4.5GHz
  • Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
  • Gain: 9dB
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 7mA, 3V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323
pacchetto: SC-70, SOT-323
Azione3.328
12V
4.5GHz
1.2dB @ 1GHz
9dB
150mW
125 @ 7mA, 3V
100mA
150°C (TJ)
Surface Mount
SC-70, SOT-323
SOT-323
NE663M04-T2-A
CEL

RF TRANSISTOR NPN SOT-343F

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 3.3V
  • Frequency - Transition: 15GHz
  • Noise Figure (dB Typ @ f): 1.2dB @ 2GHz
  • Gain: 14dB
  • Power - Max: 190mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 2V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-343F
  • Supplier Device Package: SOT-343F
pacchetto: SOT-343F
Azione6.128
3.3V
15GHz
1.2dB @ 2GHz
14dB
190mW
50 @ 10mA, 2V
100mA
150°C (TJ)
Surface Mount
SOT-343F
SOT-343F
hot KSC1730YTA
Fairchild/ON Semiconductor

TRANSISTOR NPN 15V 50MA TO-92

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 1.1GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 250mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 10V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Azione17.400
15V
1.1GHz
-
-
250mW
120 @ 5mA, 10V
50mA
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
SD1446
STMicroelectronics

TRANSISTOR NPN RF BIPO UHF M113

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 18V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: 10dB
  • Power - Max: 183W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V
  • Current - Collector (Ic) (Max): 12A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: M113
  • Supplier Device Package: M113
pacchetto: M113
Azione5.728
18V
-
-
10dB
183W
10 @ 5A, 5V
12A
200°C (TJ)
Surface Mount
M113
M113
hot NE85634-T1-A
CEL

RF TRANSISTOR NPN SOT-89

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 6.5GHz
  • Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
  • Gain: 9dB
  • Power - Max: 2W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89
pacchetto: TO-243AA
Azione24.240
12V
6.5GHz
1.1dB @ 1GHz
9dB
2W
50 @ 20mA, 10V
100mA
150°C (TJ)
Surface Mount
TO-243AA
SOT-89
hot 2N5770
Fairchild/ON Semiconductor

IC TRANS NPN SS RF 50MA TO-92

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): 6dB @ 60MHz
  • Gain: 15dB
  • Power - Max: 350mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 8mA, 10V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
pacchetto: TO-226-3, TO-92-3 (TO-226AA)
Azione6.128.100
15V
-
6dB @ 60MHz
15dB
350mW
50 @ 8mA, 10V
50mA
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
PBR951,215
NXP

TRANSISTOR NPN UHF 100MA SOT23

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 8GHz
  • Noise Figure (dB Typ @ f): 1.3dB ~ 2dB @ 1GHz ~ 2GHz
  • Gain: -
  • Power - Max: 365mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 6V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB (SOT23)
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione6.736
10V
8GHz
1.3dB ~ 2dB @ 1GHz ~ 2GHz
-
365mW
50 @ 5mA, 6V
100mA
175°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
TO-236AB (SOT23)
MX0912B351Y,114
Ampleon USA Inc.

TRANSISTOR POWER NPN SOT439A

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 1.215GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 7.6dB
  • Power - Max: 960W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): 21A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-439A
  • Supplier Device Package: CDFM2
pacchetto: SOT-439A
Azione5.440
20V
1.215GHz
-
7.6dB
960W
-
21A
200°C (TJ)
Surface Mount
SOT-439A
CDFM2
BFS17W,115
NXP

TRANS NPN 15V 1GHZ SOT323

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 1.6GHz
  • Noise Figure (dB Typ @ f): 4.5dB @ 500MHz
  • Gain: -
  • Power - Max: 300mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 2mA, 1V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323-3
pacchetto: SC-70, SOT-323
Azione4.176
15V
1.6GHz
4.5dB @ 500MHz
-
300mW
25 @ 2mA, 1V
50mA
175°C (TJ)
Surface Mount
SC-70, SOT-323
SOT-323-3
BFR360FH6765XTSA1
Infineon Technologies

TRANS RF NPN 6V 35MA TSFP-3

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 9V
  • Frequency - Transition: 14GHz
  • Noise Figure (dB Typ @ f): 1dB @ 1.8GHz
  • Gain: 15.5dB
  • Power - Max: 210mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 15mA, 3V
  • Current - Collector (Ic) (Max): 35mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-723
  • Supplier Device Package: PG-TSFP-3
pacchetto: SOT-723
Azione5.824
9V
14GHz
1dB @ 1.8GHz
15.5dB
210mW
90 @ 15mA, 3V
35mA
150°C (TJ)
Surface Mount
SOT-723
PG-TSFP-3
MDS1100
Microsemi Corporation

TRANS RF BIPO 8750W 100A 55TU1

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: 1.03GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 8.9dB
  • Power - Max: 8750W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 5V
  • Current - Collector (Ic) (Max): 100A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 55TU-1
  • Supplier Device Package: 55TU-1
pacchetto: 55TU-1
Azione2.784
65V
1.03GHz
-
8.9dB
8750W
20 @ 5A, 5V
100A
200°C (TJ)
Surface Mount
55TU-1
55TU-1
PH1090-350L
M/A-Com Technology Solutions

TRANSISTOR 350W 1090MHZ

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: 8.32dB
  • Power - Max: 350W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): 17A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione3.344
80V
-
-
8.32dB
350W
-
17A
200°C (TJ)
Chassis Mount
-
-
PH2729-130M
M/A-Com Technology Solutions

TRANSISTOR 130WPK 2.7-2.9GHZ

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 63V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: 9.73dB ~ 8.85dB
  • Power - Max: 130W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): 12.5A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione2.144
63V
-
-
9.73dB ~ 8.85dB
130W
-
12.5A
200°C (TJ)
Chassis Mount
-
-
NE68133-T1B-A
CEL

RF TRANSISTOR NPN SOT-23

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 9GHz
  • Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
  • Gain: 13dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 8V
  • Current - Collector (Ic) (Max): 65mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione3.312
10V
9GHz
1.2dB @ 1GHz
13dB
200mW
50 @ 20mA, 8V
65mA
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
hot AT-30511-BLKG
Broadcom Limited

TRANS NPN BIPO 5.5V 8MA SOT-143

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 5.5V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): 1.1dB ~ 1.4dB @ 900MHz
  • Gain: 14dB ~ 16dB
  • Power - Max: 100mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 2.7V
  • Current - Collector (Ic) (Max): 8mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-253-4, TO-253AA
  • Supplier Device Package: SOT-143
pacchetto: TO-253-4, TO-253AA
Azione6.192
5.5V
-
1.1dB ~ 1.4dB @ 900MHz
14dB ~ 16dB
100mW
70 @ 1mA, 2.7V
8mA
150°C (TJ)
Surface Mount
TO-253-4, TO-253AA
SOT-143
15GN01MA-TL-E
ON Semiconductor

TRANS NPN BIPO 50MA 8V MCP

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 8V
  • Frequency - Transition: 1.5GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 400mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 5V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, Gull Wing
  • Supplier Device Package: 3-MCP
pacchetto: 3-SMD, Gull Wing
Azione2.592
8V
1.5GHz
-
-
400mW
200 @ 10mA, 5V
50mA
150°C (TJ)
Surface Mount
3-SMD, Gull Wing
3-MCP
BFU530XRR
NXP

TRANS RF NPN 12V 40MA SOT-143R

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 11GHz
  • Noise Figure (dB Typ @ f): 0.65dB @ 900MHz
  • Gain: 21dB
  • Power - Max: 450mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 8V
  • Current - Collector (Ic) (Max): 40mA
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-143R
  • Supplier Device Package: SOT-143R
pacchetto: SOT-143R
Azione2.752
12V
11GHz
0.65dB @ 900MHz
21dB
450mW
60 @ 10mA, 8V
40mA
-40°C ~ 150°C (TJ)
Surface Mount
SOT-143R
SOT-143R
BF776H6327XTSA1
Infineon Technologies

TRANS RF NPN 1.8GHZ 4.0V SOT343

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 4.7V
  • Frequency - Transition: 46GHz
  • Noise Figure (dB Typ @ f): 0.8dB ~ 1.3dB @ 1.8GHz ~ 6GHz
  • Gain: 24dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 30mA, 3V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: PG-SOT343-4
pacchetto: SC-82A, SOT-343
Azione97.206
4.7V
46GHz
0.8dB ~ 1.3dB @ 1.8GHz ~ 6GHz
24dB
200mW
180 @ 30mA, 3V
50mA
150°C (TJ)
Surface Mount
SC-82A, SOT-343
PG-SOT343-4
BFP740H6327XTSA1
Infineon Technologies

TRANS RF NPN 42GHZ 4.7V SOT343

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 4.7V
  • Frequency - Transition: 42GHz
  • Noise Figure (dB Typ @ f): 0.5dB ~ 0.85dB @ 1.8GHz ~ 6GHz
  • Gain: 27dB
  • Power - Max: 160mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 25mA, 3V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: SOT-343
pacchetto: SC-82A, SOT-343
Azione3.184
4.7V
42GHz
0.5dB ~ 0.85dB @ 1.8GHz ~ 6GHz
27dB
160mW
160 @ 25mA, 3V
30mA
150°C (TJ)
Surface Mount
SC-82A, SOT-343
SOT-343
hot 2N4427
Central Semiconductor Corp

TRANS NPN 20V 0.4A TO-39

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 500MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 10dB
  • Power - Max: 1W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 100mA, 5V
  • Current - Collector (Ic) (Max): 400mA
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39
pacchetto: TO-205AD, TO-39-3 Metal Can
Azione61.800
20V
500MHz
-
10dB
1W
10 @ 100mA, 5V
400mA
-65°C ~ 200°C (TJ)
Through Hole
TO-205AD, TO-39-3 Metal Can
TO-39