Pagina 108 - Transistor - FET, MOSFET - Array | Dispositivi a semiconduttore discreti

Numero di parte	Produttore	Descrizione	pacchetto	Azione	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IRF6702M2DTRPBF	Infineon Technologies	MOSFET 2N-CH 30V 15A DIRECTFET FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 15A Rds On (Max) @ Id, Vgs: 6.6 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.35V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1380pF @ 15V Power - Max: 2.7W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DirectFET? Isometric MA Supplier Device Package: DIRECTFET? MA	pacchetto: DirectFET? Isometric MA	Azione6.048	Logic Level Gate	30V	15A	6.6 mOhm @ 15A, 10V	2.35V @ 25µA	14nC @ 4.5V	1380pF @ 15V	2.7W	-55°C ~ 175°C (TJ)	Surface Mount	DirectFET? Isometric MA	DIRECTFET? MA
IRF7331PBF	Infineon Technologies	MOSFET 2N-CH 20V 7A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7A Rds On (Max) @ Id, Vgs: 30 mOhm @ 7A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1340pF @ 16V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	pacchetto: 8-SOIC (0.154", 3.90mm Width)	Azione2.320	Logic Level Gate	20V	7A	30 mOhm @ 7A, 4.5V	1.2V @ 250µA	20nC @ 4.5V	1340pF @ 16V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
QJD1210010	Powerex Inc.	MOSFET 2N-CH 1200V 100A SIC FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 100A Rds On (Max) @ Id, Vgs: 25 mOhm @ 100A, 20V Vgs(th) (Max) @ Id: 5V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 500nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 10200pF @ 800V Power - Max: 1080W Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	pacchetto: Module	Azione4.064	Standard	1200V (1.2kV)	100A	25 mOhm @ 100A, 20V	5V @ 10mA	500nC @ 20V	10200pF @ 800V	1080W	-40°C ~ 175°C (TJ)	Chassis Mount	Module	Module
ECH8660-S-TL-H	ON Semiconductor	MOSFET N/P-CH 30V 4.5A ECH8 FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 8-ECH	pacchetto: 8-SMD, Flat Lead	Azione2.832	-	-	-	-	-	-	-	-	-	Surface Mount	8-SMD, Flat Lead	8-ECH
JANTXV2N7334	Microsemi Corporation	MOSFET 4N-CH 100V 1A MO-036AB FET Type: 4 N-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 1A Rds On (Max) @ Id, Vgs: 700 mOhm @ 600mA, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 14-DIP (0.300", 7.62mm) Supplier Device Package: MO-036AB	pacchetto: 14-DIP (0.300", 7.62mm)	Azione2.848	Standard	100V	1A	700 mOhm @ 600mA, 10V	4V @ 250µA	60nC @ 10V	-	1.4W	-55°C ~ 150°C (TJ)	Through Hole	14-DIP (0.300", 7.62mm)	MO-036AB
JANTX2N7334	Microsemi Corporation	MOSFET 4N-CH 100V 1A MO-036AB FET Type: 4 N-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 1A Rds On (Max) @ Id, Vgs: 700 mOhm @ 600mA, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 14-DIP (0.300", 7.62mm) Supplier Device Package: MO-036AB	pacchetto: 14-DIP (0.300", 7.62mm)	Azione4.448	Standard	100V	1A	700 mOhm @ 600mA, 10V	4V @ 250µA	60nC @ 10V	-	1.4W	-55°C ~ 150°C (TJ)	Through Hole	14-DIP (0.300", 7.62mm)	MO-036AB
AON7932	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 30V 6.6A/8.1A 8DFN FET Type: 2 N-Channel (Half Bridge) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.6A, 8.1A Rds On (Max) @ Id, Vgs: 20 mOhm @ 6.6A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 15V Power - Max: 1.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-DFN-EP (3x3)	pacchetto: 8-WDFN Exposed Pad	Azione75.624	Logic Level Gate	30V	6.6A, 8.1A	20 mOhm @ 6.6A, 10V	2.4V @ 250µA	6.5nC @ 10V	460pF @ 15V	1.4W	-55°C ~ 150°C (TJ)	Surface Mount	8-WDFN Exposed Pad	8-DFN-EP (3x3)
SI6933DQ-T1-GE3	Vishay Siliconix	MOSFET 2P-CH 30V 8-TSSOP FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 45 mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	pacchetto: 8-TSSOP (0.173", 4.40mm Width)	Azione3.216	Logic Level Gate	30V	-	45 mOhm @ 3.5A, 10V	1V @ 250µA (Min)	30nC @ 10V	-	1W	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
FDS4895C	Fairchild/ON Semiconductor	MOSFET N/P-CH 40V 8SOIC FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 5.5A, 4.4A Rds On (Max) @ Id, Vgs: 39 mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 20V Power - Max: 900mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	pacchetto: 8-SOIC (0.154", 3.90mm Width)	Azione6.496	Standard	40V	5.5A, 4.4A	39 mOhm @ 5.5A, 10V	5V @ 250µA	10nC @ 10V	410pF @ 20V	900mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
DMC3035LSD-13	Diodes Incorporated	MOSFET N/P-CH 30V 6.9A/5A 8-SOIC FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.9A, 5A Rds On (Max) @ Id, Vgs: 35 mOhm @ 6.9A, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 384pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	pacchetto: 8-SOIC (0.154", 3.90mm Width)	Azione564.312	Logic Level Gate	30V	6.9A, 5A	35 mOhm @ 6.9A, 10V	2.1V @ 250µA	8.6nC @ 10V	384pF @ 15V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
APTM100DU18TG	Microsemi Corporation	MOSFET 2N-CH 1000V 43A SP4 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 1000V (1kV) Current - Continuous Drain (Id) @ 25°C: 43A Rds On (Max) @ Id, Vgs: 210 mOhm @ 21.5A, 10V Vgs(th) (Max) @ Id: 5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 372nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10400pF @ 25V Power - Max: 780W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP4 Supplier Device Package: SP4	pacchetto: SP4	Azione3.424	Standard	1000V (1kV)	43A	210 mOhm @ 21.5A, 10V	5V @ 5mA	372nC @ 10V	10400pF @ 25V	780W	-40°C ~ 150°C (TJ)	Chassis Mount	SP4	SP4
AOP605	Alpha & Omega Semiconductor Inc.	MOSFET N/P-CH 30V 8DIP FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 28 mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V Power - Max: 2.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-PDIP	pacchetto: 8-DIP (0.300", 7.62mm)	Azione10.380	Logic Level Gate	30V	-	28 mOhm @ 7.5A, 10V	3V @ 250µA	16.6nC @ 4.5V	820pF @ 15V	2.5W	-55°C ~ 150°C (TJ)	Through Hole	8-DIP (0.300", 7.62mm)	8-PDIP
FDS4953	Fairchild/ON Semiconductor	MOSFET 2P-CH 30V 5A 8SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A Rds On (Max) @ Id, Vgs: 55 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 528pF @ 15V Power - Max: 900mW Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	pacchetto: 8-SOIC (0.154", 3.90mm Width)	Azione158.856	Logic Level Gate	30V	5A	55 mOhm @ 5A, 10V	3V @ 250µA	9nC @ 5V	528pF @ 15V	900mW	-55°C ~ 175°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SI9926BDY-T1-E3	Vishay Siliconix	MOSFET 2N-CH 20V 6.2A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6.2A Rds On (Max) @ Id, Vgs: 20 mOhm @ 8.2A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.14W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	pacchetto: 8-SOIC (0.154", 3.90mm Width)	Azione1.274.280	Logic Level Gate	20V	6.2A	20 mOhm @ 8.2A, 4.5V	1.5V @ 250µA	20nC @ 4.5V	-	1.14W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SI6943BDQ-T1-E3	Vishay Siliconix	MOSFET 2P-CH 12V 2.3A 8TSSOP FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 2.3A Rds On (Max) @ Id, Vgs: 80 mOhm @ 2.5A, 4.5V Vgs(th) (Max) @ Id: 800mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 800mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	pacchetto: 8-TSSOP (0.173", 4.40mm Width)	Azione104.520	Logic Level Gate	12V	2.3A	80 mOhm @ 2.5A, 4.5V	800mV @ 250µA	10nC @ 4.5V	-	800mW	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
ZXMN6A11DN8TC	Diodes Incorporated	MOSFET 2N-CH 60V 2.5A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2.5A Rds On (Max) @ Id, Vgs: 120 mOhm @ 2.5A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 40V Power - Max: 1.8W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	pacchetto: 8-SOIC (0.154", 3.90mm Width)	Azione1.044.864	Logic Level Gate	60V	2.5A	120 mOhm @ 2.5A, 10V	1V @ 250µA (Min)	5.7nC @ 10V	330pF @ 40V	1.8W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
NTHD5904T1	ON Semiconductor	MOSFET 2N-CH 20V 3.1A CHIPFET FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.1A Rds On (Max) @ Id, Vgs: 75 mOhm @ 3.1A, 4.5V Vgs(th) (Max) @ Id: 600mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: ChipFET?	pacchetto: 8-SMD, Flat Lead	Azione4.080	Logic Level Gate	20V	3.1A	75 mOhm @ 3.1A, 4.5V	600mV @ 250µA	6nC @ 4.5V	-	1.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SMD, Flat Lead	ChipFET?
AUIRF7316QTR	Infineon Technologies	MOSFET 2P-CH 30V 4.9A 8SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 58 mOhm @ 4.9A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 25V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC Supplier Device Package: 8-SO	pacchetto: 8-SOIC	Azione3.312	Logic Level Gate	30V	-	58 mOhm @ 4.9A, 10V	3V @ 250µA	34nC @ 10V	710pF @ 25V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SO
IRF7104PBF	Infineon Technologies	MOSFET 2P-CH 20V 2.3A 8-SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.3A Rds On (Max) @ Id, Vgs: 250 mOhm @ 1A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	pacchetto: 8-SOIC (0.154", 3.90mm Width)	Azione5.536	Logic Level Gate	20V	2.3A	250 mOhm @ 1A, 10V	3V @ 250µA	25nC @ 10V	290pF @ 15V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
DMGD7N45SSD-13	Diodes Incorporated	MOSFET 2NCH 450V 500MA 8SO FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 450V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Rds On (Max) @ Id, Vgs: 4 Ohm @ 400mA, 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 256pF @ 25V Power - Max: 1.64W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	pacchetto: 8-SOIC (0.154", 3.90mm Width)	Azione3.168	Standard	450V	500mA (Ta)	4 Ohm @ 400mA, 10V	4.5V @ 1mA	6.9nC @ 10V	256pF @ 25V	1.64W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
DMPH6050SSD-13	Diodes Incorporated	MOSFET BVDSS: 41V 60V SO-8 FET Type: 2 P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta) Rds On (Max) @ Id, Vgs: 48 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1525pF @ 30V Power - Max: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	pacchetto: 8-SOIC (0.154", 3.90mm Width)	Azione7.888	Standard	-	5.2A (Ta)	48 mOhm @ 5A, 10V	3V @ 250µA	14.5nC @ 4.5V	1525pF @ 30V	-	-55°C ~ 175°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
DMG6601LVT-7	Diodes Incorporated	MOSFET N/P-CH 30V 26TSOT FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.8A, 2.5A Rds On (Max) @ Id, Vgs: 55 mOhm @ 3.4A, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 422pF @ 15V Power - Max: 850mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSOT-26	pacchetto: SOT-23-6 Thin, TSOT-23-6	Azione3.280	Logic Level Gate	30V	3.8A, 2.5A	55 mOhm @ 3.4A, 10V	1.5V @ 250µA	12.3nC @ 10V	422pF @ 15V	850mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	TSOT-26
ZXMN3A06DN8TA	Diodes Incorporated	MOSFET 2N-CH 30V 4.9A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.9A Rds On (Max) @ Id, Vgs: 35 mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 796pF @ 25V Power - Max: 1.8W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	pacchetto: 8-SOIC (0.154", 3.90mm Width)	Azione620.076	Logic Level Gate	30V	4.9A	35 mOhm @ 9A, 10V	1V @ 250µA (Min)	17.5nC @ 10V	796pF @ 25V	1.8W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
DMP2060UFDB-7	Diodes Incorporated	MOSFET 2P-CH 20V 3.2A 6UDFN FET Type: 2 P-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.2A Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.9A, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 881pF @ 10V Power - Max: 1.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: U-DFN2020-6 (Type B)	pacchetto: 6-UDFN Exposed Pad	Azione3.424	Standard	20V	3.2A	90 mOhm @ 2.9A, 4.5V	1.4V @ 250µA	18nC @ 8V	881pF @ 10V	1.4W	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN Exposed Pad	U-DFN2020-6 (Type B)
ALD310708PCL	Advanced Linear Devices Inc.	QUAD P-CHANNEL EPAD MATCHED PAIR FET Type: 4 P-Channel, Matched Pair FET Feature: Standard Drain to Source Voltage (Vdss): 8V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 780mV @ 1µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V Power - Max: 500mW Operating Temperature: 0°C ~ 70°C Mounting Type: Through Hole Package / Case: 16-DIP (0.300", 7.62mm) Supplier Device Package: 16-PDIP	pacchetto: 16-DIP (0.300", 7.62mm)	Azione6.336	Standard	8V	-	-	780mV @ 1µA	-	2.5pF @ 5V	500mW	0°C ~ 70°C	Through Hole	16-DIP (0.300", 7.62mm)	16-PDIP
APTC60TDUM35PG	Microsemi Corporation	MOSFET 6N-CH 600V 72A SP6-P FET Type: 6 N-Channel (3-Phase Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 72A Rds On (Max) @ Id, Vgs: 35 mOhm @ 72A, 10V Vgs(th) (Max) @ Id: 3.9V @ 5.4mA Gate Charge (Qg) (Max) @ Vgs: 518nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V Power - Max: 416W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6-P	pacchetto: SP6	Azione7.056	Standard	600V	72A	35 mOhm @ 72A, 10V	3.9V @ 5.4mA	518nC @ 10V	14000pF @ 25V	416W	-40°C ~ 150°C (TJ)	Chassis Mount	SP6	SP6-P
SI6926ADQ-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 20V 4.1A 8-TSSOP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.1A Rds On (Max) @ Id, Vgs: 30 mOhm @ 4.5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 830mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	pacchetto: 8-TSSOP (0.173", 4.40mm Width)	Azione438.120	Logic Level Gate	20V	4.1A	30 mOhm @ 4.5A, 4.5V	1V @ 250µA	10.5nC @ 4.5V	-	830mW	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
DMP56D0UV-7	Diodes Incorporated	MOSFET 2P-CH 50V 0.16A SOT563 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 160mA Rds On (Max) @ Id, Vgs: 6 Ohm @ 100mA, 4V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.58nC @ 4V Input Capacitance (Ciss) (Max) @ Vds: 50.54pF @ 25V Power - Max: 400mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	pacchetto: SOT-563, SOT-666	Azione45.492	Logic Level Gate	50V	160mA	6 Ohm @ 100mA, 4V	1.2V @ 250µA	0.58nC @ 4V	50.54pF @ 25V	400mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
ZXMN6A11DN8TA	Diodes Incorporated	MOSFET 2N-CH 60V 2.5A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2.5A Rds On (Max) @ Id, Vgs: 120 mOhm @ 2.5A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 40V Power - Max: 1.8W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	pacchetto: 8-SOIC (0.154", 3.90mm Width)	Azione884.352	Logic Level Gate	60V	2.5A	120 mOhm @ 2.5A, 10V	1V @ 250µA (Min)	5.7nC @ 10V	330pF @ 40V	1.8W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
FDMA6023PZT	Fairchild/ON Semiconductor	MOSFET 2P-CH 20V 3.6A 6MICROFET FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.6A Rds On (Max) @ Id, Vgs: 60 mOhm @ 3.6A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 885pF @ 10V Power - Max: 700mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: 6-MicroFET (2x2)	pacchetto: 6-UDFN Exposed Pad	Azione13.428	Logic Level Gate	20V	3.6A	60 mOhm @ 3.6A, 4.5V	1.5V @ 250µA	17nC @ 4.5V	885pF @ 10V	700mW	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN Exposed Pad	6-MicroFET (2x2)

IRF6702M2DTRPBF

Infineon Technologies

MOSFET 2N-CH 30V 15A DIRECTFET

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 15A
Rds On (Max) @ Id, Vgs: 6.6 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1380pF @ 15V
Power - Max: 2.7W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET? Isometric MA
Supplier Device Package: DIRECTFET? MA

pacchetto: DirectFET? Isometric MA

Azione6.048

Logic Level Gate

30V

15A

6.6 mOhm @ 15A, 10V

2.35V @ 25µA

14nC @ 4.5V

1380pF @ 15V

2.7W

-55°C ~ 175°C (TJ)

Surface Mount

DirectFET? Isometric MA

DIRECTFET? MA

IRF7331PBF

Infineon Technologies

MOSFET 2N-CH 20V 7A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7A
Rds On (Max) @ Id, Vgs: 30 mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1340pF @ 16V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

pacchetto: 8-SOIC (0.154", 3.90mm Width)

Azione2.320

Logic Level Gate

20V

7A

30 mOhm @ 7A, 4.5V

1.2V @ 250µA

20nC @ 4.5V

1340pF @ 16V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

QJD1210010

Powerex Inc.

MOSFET 2N-CH 1200V 100A SIC

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 100A
Rds On (Max) @ Id, Vgs: 25 mOhm @ 100A, 20V
Vgs(th) (Max) @ Id: 5V @ 10mA
Gate Charge (Qg) (Max) @ Vgs: 500nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 10200pF @ 800V
Power - Max: 1080W
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

pacchetto: Module

Azione4.064

Standard

1200V (1.2kV)

100A

25 mOhm @ 100A, 20V

5V @ 10mA

500nC @ 20V

10200pF @ 800V

1080W

-40°C ~ 175°C (TJ)

Chassis Mount

Module

ECH8660-S-TL-H

ON Semiconductor

MOSFET N/P-CH 30V 4.5A ECH8

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 8-ECH

pacchetto: 8-SMD, Flat Lead

Azione2.832

-

Surface Mount

8-SMD, Flat Lead

8-ECH

JANTXV2N7334

Microsemi Corporation

MOSFET 4N-CH 100V 1A MO-036AB

FET Type: 4 N-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 1A
Rds On (Max) @ Id, Vgs: 700 mOhm @ 600mA, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 14-DIP (0.300", 7.62mm)
Supplier Device Package: MO-036AB

pacchetto: 14-DIP (0.300", 7.62mm)

Azione2.848

Standard

100V

1A

700 mOhm @ 600mA, 10V

4V @ 250µA

60nC @ 10V

-

1.4W

-55°C ~ 150°C (TJ)

Through Hole

14-DIP (0.300", 7.62mm)

MO-036AB

JANTX2N7334

Microsemi Corporation

MOSFET 4N-CH 100V 1A MO-036AB

FET Type: 4 N-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 1A
Rds On (Max) @ Id, Vgs: 700 mOhm @ 600mA, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 14-DIP (0.300", 7.62mm)
Supplier Device Package: MO-036AB

pacchetto: 14-DIP (0.300", 7.62mm)

Azione4.448

Standard

100V

1A

700 mOhm @ 600mA, 10V

4V @ 250µA

60nC @ 10V

-

1.4W

-55°C ~ 150°C (TJ)

Through Hole

14-DIP (0.300", 7.62mm)

MO-036AB

AON7932

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 6.6A/8.1A 8DFN

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.6A, 8.1A
Rds On (Max) @ Id, Vgs: 20 mOhm @ 6.6A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 15V
Power - Max: 1.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-DFN-EP (3x3)

pacchetto: 8-WDFN Exposed Pad

Azione75.624

Logic Level Gate

30V

6.6A, 8.1A

20 mOhm @ 6.6A, 10V

2.4V @ 250µA

6.5nC @ 10V

460pF @ 15V

1.4W

-55°C ~ 150°C (TJ)

Surface Mount

8-WDFN Exposed Pad

8-DFN-EP (3x3)

SI6933DQ-T1-GE3

Vishay Siliconix

MOSFET 2P-CH 30V 8-TSSOP

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 45 mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

pacchetto: 8-TSSOP (0.173", 4.40mm Width)

Azione3.216

Logic Level Gate

30V

-

45 mOhm @ 3.5A, 10V

1V @ 250µA (Min)

30nC @ 10V

-

1W

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

FDS4895C

Fairchild/ON Semiconductor

MOSFET N/P-CH 40V 8SOIC

FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5.5A, 4.4A
Rds On (Max) @ Id, Vgs: 39 mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 20V
Power - Max: 900mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

pacchetto: 8-SOIC (0.154", 3.90mm Width)

Azione6.496

Standard

40V

5.5A, 4.4A

39 mOhm @ 5.5A, 10V

5V @ 250µA

10nC @ 10V

410pF @ 20V

900mW

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

DMC3035LSD-13

Diodes Incorporated

MOSFET N/P-CH 30V 6.9A/5A 8-SOIC

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.9A, 5A
Rds On (Max) @ Id, Vgs: 35 mOhm @ 6.9A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 384pF @ 15V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

pacchetto: 8-SOIC (0.154", 3.90mm Width)

Azione564.312

Logic Level Gate

30V

6.9A, 5A

35 mOhm @ 6.9A, 10V

2.1V @ 250µA

8.6nC @ 10V

384pF @ 15V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

APTM100DU18TG

Microsemi Corporation

MOSFET 2N-CH 1000V 43A SP4

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 1000V (1kV)
Current - Continuous Drain (Id) @ 25°C: 43A
Rds On (Max) @ Id, Vgs: 210 mOhm @ 21.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs: 372nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 10400pF @ 25V
Power - Max: 780W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP4
Supplier Device Package: SP4

pacchetto: SP4

Azione3.424

Standard

1000V (1kV)

43A

210 mOhm @ 21.5A, 10V

5V @ 5mA

372nC @ 10V

10400pF @ 25V

780W

-40°C ~ 150°C (TJ)

Chassis Mount

SP4

AOP605

Alpha & Omega Semiconductor Inc.

MOSFET N/P-CH 30V 8DIP

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 28 mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V
Power - Max: 2.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-PDIP

pacchetto: 8-DIP (0.300", 7.62mm)

Azione10.380

Logic Level Gate

30V

-

28 mOhm @ 7.5A, 10V

3V @ 250µA

16.6nC @ 4.5V

820pF @ 15V

2.5W

-55°C ~ 150°C (TJ)

Through Hole

8-DIP (0.300", 7.62mm)

8-PDIP

FDS4953

Fairchild/ON Semiconductor

MOSFET 2P-CH 30V 5A 8SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A
Rds On (Max) @ Id, Vgs: 55 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 528pF @ 15V
Power - Max: 900mW
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

pacchetto: 8-SOIC (0.154", 3.90mm Width)

Azione158.856

Logic Level Gate

30V

5A

55 mOhm @ 5A, 10V

3V @ 250µA

9nC @ 5V

528pF @ 15V

900mW

-55°C ~ 175°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

SI9926BDY-T1-E3

Vishay Siliconix

MOSFET 2N-CH 20V 6.2A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.2A
Rds On (Max) @ Id, Vgs: 20 mOhm @ 8.2A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.14W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

pacchetto: 8-SOIC (0.154", 3.90mm Width)

Azione1.274.280

Logic Level Gate

20V

6.2A

20 mOhm @ 8.2A, 4.5V

1.5V @ 250µA

20nC @ 4.5V

-

1.14W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

SI6943BDQ-T1-E3

Vishay Siliconix

MOSFET 2P-CH 12V 2.3A 8TSSOP

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 2.3A
Rds On (Max) @ Id, Vgs: 80 mOhm @ 2.5A, 4.5V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 800mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

pacchetto: 8-TSSOP (0.173", 4.40mm Width)

Azione104.520

Logic Level Gate

12V

2.3A

80 mOhm @ 2.5A, 4.5V

800mV @ 250µA

10nC @ 4.5V

-

800mW

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

ZXMN6A11DN8TC

Diodes Incorporated

MOSFET 2N-CH 60V 2.5A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 2.5A
Rds On (Max) @ Id, Vgs: 120 mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 40V
Power - Max: 1.8W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

pacchetto: 8-SOIC (0.154", 3.90mm Width)

Azione1.044.864

Logic Level Gate

60V

2.5A

120 mOhm @ 2.5A, 10V

1V @ 250µA (Min)

5.7nC @ 10V

330pF @ 40V

1.8W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

NTHD5904T1

ON Semiconductor

MOSFET 2N-CH 20V 3.1A CHIPFET

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.1A
Rds On (Max) @ Id, Vgs: 75 mOhm @ 3.1A, 4.5V
Vgs(th) (Max) @ Id: 600mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: ChipFET?

pacchetto: 8-SMD, Flat Lead

Azione4.080

Logic Level Gate

20V

3.1A

75 mOhm @ 3.1A, 4.5V

600mV @ 250µA

6nC @ 4.5V

-

1.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-SMD, Flat Lead

ChipFET?

AUIRF7316QTR

Infineon Technologies

MOSFET 2P-CH 30V 4.9A 8SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 58 mOhm @ 4.9A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 25V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC
Supplier Device Package: 8-SO

pacchetto: 8-SOIC

Azione3.312

Logic Level Gate

30V

-

58 mOhm @ 4.9A, 10V

3V @ 250µA

34nC @ 10V

710pF @ 25V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC

8-SO

IRF7104PBF

Infineon Technologies

MOSFET 2P-CH 20V 2.3A 8-SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.3A
Rds On (Max) @ Id, Vgs: 250 mOhm @ 1A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 15V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

pacchetto: 8-SOIC (0.154", 3.90mm Width)

Azione5.536

Logic Level Gate

20V

2.3A

250 mOhm @ 1A, 10V

3V @ 250µA

25nC @ 10V

290pF @ 15V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

DMGD7N45SSD-13

Diodes Incorporated

MOSFET 2NCH 450V 500MA 8SO

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 450V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 4 Ohm @ 400mA, 10V
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 256pF @ 25V
Power - Max: 1.64W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

pacchetto: 8-SOIC (0.154", 3.90mm Width)

Azione3.168

Standard

450V

500mA (Ta)

4 Ohm @ 400mA, 10V

4.5V @ 1mA

6.9nC @ 10V

256pF @ 25V

1.64W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

DMPH6050SSD-13

Diodes Incorporated

MOSFET BVDSS: 41V 60V SO-8

FET Type: 2 P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
Rds On (Max) @ Id, Vgs: 48 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1525pF @ 30V
Power - Max: -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

pacchetto: 8-SOIC (0.154", 3.90mm Width)

Azione7.888

Standard

-

5.2A (Ta)

48 mOhm @ 5A, 10V

3V @ 250µA

14.5nC @ 4.5V

1525pF @ 30V

-

-55°C ~ 175°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

DMG6601LVT-7

Diodes Incorporated

MOSFET N/P-CH 30V 26TSOT

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.8A, 2.5A
Rds On (Max) @ Id, Vgs: 55 mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 422pF @ 15V
Power - Max: 850mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: TSOT-26

pacchetto: SOT-23-6 Thin, TSOT-23-6

Azione3.280

Logic Level Gate

30V

3.8A, 2.5A

55 mOhm @ 3.4A, 10V

1.5V @ 250µA

12.3nC @ 10V

422pF @ 15V

850mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

TSOT-26

ZXMN3A06DN8TA

Diodes Incorporated

MOSFET 2N-CH 30V 4.9A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.9A
Rds On (Max) @ Id, Vgs: 35 mOhm @ 9A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 796pF @ 25V
Power - Max: 1.8W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

pacchetto: 8-SOIC (0.154", 3.90mm Width)

Azione620.076

Logic Level Gate

30V

4.9A

35 mOhm @ 9A, 10V

1V @ 250µA (Min)

17.5nC @ 10V

796pF @ 25V

1.8W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

DMP2060UFDB-7

Diodes Incorporated

MOSFET 2P-CH 20V 3.2A 6UDFN

FET Type: 2 P-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.2A
Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.9A, 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 881pF @ 10V
Power - Max: 1.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: U-DFN2020-6 (Type B)

pacchetto: 6-UDFN Exposed Pad

Azione3.424

Standard

20V

3.2A

90 mOhm @ 2.9A, 4.5V

1.4V @ 250µA

18nC @ 8V

881pF @ 10V

1.4W

-55°C ~ 150°C (TJ)

Surface Mount

6-UDFN Exposed Pad

U-DFN2020-6 (Type B)

ALD310708PCL

Advanced Linear Devices Inc.

QUAD P-CHANNEL EPAD MATCHED PAIR

FET Type: 4 P-Channel, Matched Pair
FET Feature: Standard
Drain to Source Voltage (Vdss): 8V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: 780mV @ 1µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Power - Max: 500mW
Operating Temperature: 0°C ~ 70°C
Mounting Type: Through Hole
Package / Case: 16-DIP (0.300", 7.62mm)
Supplier Device Package: 16-PDIP

pacchetto: 16-DIP (0.300", 7.62mm)

Azione6.336

Standard

8V

-

780mV @ 1µA

-

2.5pF @ 5V

500mW

0°C ~ 70°C

Through Hole

16-DIP (0.300", 7.62mm)

16-PDIP

APTC60TDUM35PG

Microsemi Corporation

MOSFET 6N-CH 600V 72A SP6-P

FET Type: 6 N-Channel (3-Phase Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 72A
Rds On (Max) @ Id, Vgs: 35 mOhm @ 72A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 5.4mA
Gate Charge (Qg) (Max) @ Vgs: 518nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
Power - Max: 416W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Supplier Device Package: SP6-P

pacchetto: SP6

Azione7.056

Standard

600V

72A

35 mOhm @ 72A, 10V

3.9V @ 5.4mA

518nC @ 10V

14000pF @ 25V

416W

-40°C ~ 150°C (TJ)

Chassis Mount

SP6

SP6-P

SI6926ADQ-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 20V 4.1A 8-TSSOP

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.1A
Rds On (Max) @ Id, Vgs: 30 mOhm @ 4.5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 830mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

pacchetto: 8-TSSOP (0.173", 4.40mm Width)

Azione438.120

Logic Level Gate

20V

4.1A

30 mOhm @ 4.5A, 4.5V

1V @ 250µA

10.5nC @ 4.5V

-

830mW

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

DMP56D0UV-7

Diodes Incorporated

MOSFET 2P-CH 50V 0.16A SOT563

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 160mA
Rds On (Max) @ Id, Vgs: 6 Ohm @ 100mA, 4V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.58nC @ 4V
Input Capacitance (Ciss) (Max) @ Vds: 50.54pF @ 25V
Power - Max: 400mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

pacchetto: SOT-563, SOT-666

Azione45.492

Logic Level Gate

50V

160mA

6 Ohm @ 100mA, 4V

1.2V @ 250µA

0.58nC @ 4V

50.54pF @ 25V

400mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

ZXMN6A11DN8TA

Diodes Incorporated

MOSFET 2N-CH 60V 2.5A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 2.5A
Rds On (Max) @ Id, Vgs: 120 mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 40V
Power - Max: 1.8W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

pacchetto: 8-SOIC (0.154", 3.90mm Width)

Azione884.352

Logic Level Gate

60V

2.5A

120 mOhm @ 2.5A, 10V

1V @ 250µA (Min)

5.7nC @ 10V

330pF @ 40V

1.8W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

FDMA6023PZT

Fairchild/ON Semiconductor

MOSFET 2P-CH 20V 3.6A 6MICROFET

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.6A
Rds On (Max) @ Id, Vgs: 60 mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 885pF @ 10V
Power - Max: 700mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: 6-MicroFET (2x2)

pacchetto: 6-UDFN Exposed Pad

Azione13.428

Logic Level Gate

20V

3.6A

60 mOhm @ 3.6A, 4.5V

1.5V @ 250µA

17nC @ 4.5V

885pF @ 10V

700mW

-55°C ~ 150°C (TJ)

Surface Mount

6-UDFN Exposed Pad

6-MicroFET (2x2)