Pagina 870 - Transistor - FET, MOSFET - Singoli | Dispositivi a semiconduttore discreti | Heisener Electronics
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Transistor - FET, MOSFET - Singoli

Record 42.029
Pagina  870/1.502
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
IRF7703
Infineon Technologies

MOSFET P-CH 40V 6A 8-TSSOP

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 62nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 5220pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 28 mOhm @ 6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-TSSOP
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
pacchetto: 8-TSSOP (0.173", 4.40mm Width)
Azione2.464
MOSFET (Metal Oxide)
40V
6A (Ta)
4.5V, 10V
3V @ 250µA
62nC @ 4.5V
5220pF @ 25V
±20V
-
1.5W (Ta)
28 mOhm @ 6A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP
8-TSSOP (0.173", 4.40mm Width)
SIB411DK-T1-GE3
Vishay Siliconix

MOSFET P-CH 20V 9A PPAK SC75-6L

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 2.4W (Ta), 13W (Tc)
  • Rds On (Max) @ Id, Vgs: 66 mOhm @ 3.3A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? SC-75-6L Single
  • Package / Case: PowerPAK? SC-75-6L
pacchetto: PowerPAK? SC-75-6L
Azione4.336
MOSFET (Metal Oxide)
20V
9A (Tc)
1.8V, 4.5V
1V @ 250µA
15nC @ 8V
470pF @ 10V
±8V
-
2.4W (Ta), 13W (Tc)
66 mOhm @ 3.3A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SC-75-6L Single
PowerPAK? SC-75-6L
NTHD3101FT3
ON Semiconductor

MOSFET P-CH 20V 3.2A CHIPFET

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.2A (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: Schottky Diode (Isolated)
  • Power Dissipation (Max): 1.1W (Ta)
  • Rds On (Max) @ Id, Vgs: 80 mOhm @ 3.2A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: ChipFET?
  • Package / Case: 8-SMD, Flat Lead
pacchetto: 8-SMD, Flat Lead
Azione3.472
MOSFET (Metal Oxide)
20V
3.2A (Tj)
1.8V, 4.5V
1.5V @ 250µA
7.4nC @ 4.5V
680pF @ 10V
±8V
Schottky Diode (Isolated)
1.1W (Ta)
80 mOhm @ 3.2A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
ChipFET?
8-SMD, Flat Lead
FQB9N15TM
Fairchild/ON Semiconductor

MOSFET N-CH 150V 9A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 25V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 3.75W (Ta), 75W (Tc)
  • Rds On (Max) @ Id, Vgs: 400 mOhm @ 4.5A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK (TO-263AB)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Azione2.672
MOSFET (Metal Oxide)
150V
9A (Tc)
10V
4V @ 250µA
13nC @ 10V
410pF @ 25V
±25V
-
3.75W (Ta), 75W (Tc)
400 mOhm @ 4.5A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK (TO-263AB)
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
2SK066500L
Panasonic Electronic Components

MOSFET N-CH 20V 100MA SMINI-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Vgs(th) (Max) @ Id: 3.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): 8V
  • FET Feature: -
  • Power Dissipation (Max): 150mW (Ta)
  • Rds On (Max) @ Id, Vgs: 50 Ohm @ 20mA, 5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SMini3-G1
  • Package / Case: SC-70, SOT-323
pacchetto: SC-70, SOT-323
Azione6.976
MOSFET (Metal Oxide)
20V
100mA (Ta)
5V
3.5V @ 100µA
-
-
8V
-
150mW (Ta)
50 Ohm @ 20mA, 5V
150°C (TJ)
Surface Mount
SMini3-G1
SC-70, SOT-323
hot ZXM64N035GTA
Diodes Incorporated

MOSFET N-CH 35V 6.7A SOT223

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 35V
  • Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta), 6.7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta)
  • Rds On (Max) @ Id, Vgs: 50 mOhm @ 3.7A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-223
  • Package / Case: TO-261-4, TO-261AA
pacchetto: TO-261-4, TO-261AA
Azione317.796
MOSFET (Metal Oxide)
35V
4.8A (Ta), 6.7A (Tc)
4.5V, 10V
1V @ 250µA
27nC @ 10V
950pF @ 25V
±20V
-
2W (Ta)
50 mOhm @ 3.7A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-223
TO-261-4, TO-261AA
IRFBC30STRR
Vishay Siliconix

MOSFET N-CH 600V 3.6A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.1W (Ta), 74W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 2.2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Azione7.456
MOSFET (Metal Oxide)
600V
3.6A (Tc)
10V
4V @ 250µA
31nC @ 10V
660pF @ 25V
±20V
-
3.1W (Ta), 74W (Tc)
2.2 Ohm @ 2.2A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPN80R900P7ATMA1
Infineon Technologies

LOW POWER_NEW

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
pacchetto: -
Azione2.672
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
NVMFS6B03NLWFT3G
ON Semiconductor

MOSFET N-CH 100V 20A 5DFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5320pF @ 25V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 3.9W (Ta), 198W (Tc)
  • Rds On (Max) @ Id, Vgs: 4 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN
pacchetto: 8-PowerTDFN
Azione5.680
MOSFET (Metal Oxide)
100V
-
4.5V, 10V
3V @ 250µA
9.4nC @ 10V
5320pF @ 25V
±16V
-
3.9W (Ta), 198W (Tc)
4 mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN
FDMS2D5N08C
Fairchild/ON Semiconductor

PTNG 80V/20V N-CHANNEL MOSFET

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
pacchetto: -
Azione6.528
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IRF9620SPBF
Vishay Siliconix

MOSFET P-CH 200V 3.5A D2PAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Ta), 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 1.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Azione6.720
MOSFET (Metal Oxide)
200V
3.5A (Tc)
10V
4V @ 250µA
22nC @ 10V
350pF @ 25V
±20V
-
3W (Ta), 40W (Tc)
1.5 Ohm @ 1.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
DMN10H700S-13
Diodes Incorporated

MOSFET NCH 100V 700MA SOT23

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: Standard
  • Power Dissipation (Max): 400mW (Ta)
  • Rds On (Max) @ Id, Vgs: 700 mOhm @ 1.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23
  • Package / Case: TO-236-3, SC-59, SOT-23-3
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione5.984
MOSFET (Metal Oxide)
100V
700mA (Ta)
6V, 10V
4V @ 250µA
4.6nC @ 10V
235pF @ 50V
±20V
Standard
400mW (Ta)
700 mOhm @ 1.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
IXTQ60N20L2
IXYS

MOSFET N-CH 200V 60A TO-3P

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 255nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 10500pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 540W (Tc)
  • Rds On (Max) @ Id, Vgs: 45 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3P
  • Package / Case: TO-3P-3, SC-65-3
pacchetto: TO-3P-3, SC-65-3
Azione6.512
MOSFET (Metal Oxide)
200V
60A (Tc)
10V
4.5V @ 250µA
255nC @ 10V
10500pF @ 25V
±20V
-
540W (Tc)
45 mOhm @ 30A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-3P
TO-3P-3, SC-65-3
IPD60R1K4C6ATMA1
Infineon Technologies

MOSFET N-CH 600V 3.2A TO252-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 90µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 28.4W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 1.1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
Azione7.008
MOSFET (Metal Oxide)
600V
3.2A (Tc)
10V
3.5V @ 90µA
9.4nC @ 10V
200pF @ 100V
±20V
-
28.4W (Tc)
1.4 Ohm @ 1.1A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TO252-3
TO-252-3, DPak (2 Leads + Tab), SC-63
hot SSM3K301T(TE85L,F)
Toshiba Semiconductor and Storage

MOSFET N-CH 20V 3.5A TSM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 4.8nC @ 4V
  • Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 700mW (Ta)
  • Rds On (Max) @ Id, Vgs: 56 mOhm @ 2A, 4V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSM
  • Package / Case: TO-236-3, SC-59, SOT-23-3
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione4.496
MOSFET (Metal Oxide)
20V
3.5A (Ta)
1.8V, 4V
-
4.8nC @ 4V
320pF @ 10V
±12V
-
700mW (Ta)
56 mOhm @ 2A, 4V
150°C (TJ)
Surface Mount
TSM
TO-236-3, SC-59, SOT-23-3
STW18NM60ND
STMicroelectronics

MOSFET N-CH 600V 13A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 50V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 110W (Tc)
  • Rds On (Max) @ Id, Vgs: 290 mOhm @ 6.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
pacchetto: TO-247-3
Azione6.084
MOSFET (Metal Oxide)
600V
13A (Tc)
10V
5V @ 250µA
34nC @ 10V
1030pF @ 50V
±25V
-
110W (Tc)
290 mOhm @ 6.5A, 10V
150°C (TJ)
Through Hole
TO-247
TO-247-3
DMN2011UFDE-7
Diodes Incorporated

MOSFET N-CH 20V 11.7A UDFN2020-6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2248pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 610mW (Ta)
  • Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 7A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: U-DFN2020-6 (Type E)
  • Package / Case: 6-UDFN Exposed Pad
pacchetto: 6-UDFN Exposed Pad
Azione79.518
MOSFET (Metal Oxide)
20V
11.7A (Ta)
1.5V, 4.5V
1V @ 250µA
56nC @ 10V
2248pF @ 10V
±12V
-
610mW (Ta)
9.5 mOhm @ 7A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
U-DFN2020-6 (Type E)
6-UDFN Exposed Pad
hot NDS9407
Fairchild/ON Semiconductor

MOSFET P-CH 60V 3A 8-SOIC

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 732pF @ 30V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 150 mOhm @ 3A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione251.736
MOSFET (Metal Oxide)
60V
3A (Ta)
4.5V, 10V
3V @ 250µA
22nC @ 10V
732pF @ 30V
±20V
-
2.5W (Ta)
150 mOhm @ 3A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
PJQ5466A1_R2_00001
Panjit International Inc.

60V N-CHANNEL ENHANCEMENT MODE M

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 48A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1574 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta), 83W (Tc)
  • Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DFN5060-8
  • Package / Case: 8-PowerVDFN
pacchetto: -
Azione5.910
MOSFET (Metal Oxide)
60 V
7.4A (Ta), 48A (Tc)
4.5V, 10V
2.5V @ 250µA
13.5 nC @ 4.5 V
1574 pF @ 25 V
±20V
-
2W (Ta), 83W (Tc)
17mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
DFN5060-8
8-PowerVDFN
BSC014N04LSTATMA1
Infineon Technologies

MOSFET N-CH 40V 33A/100A TDSON

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6020 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Ta), 115W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TDSON-8 FL
  • Package / Case: 8-PowerTDFN
pacchetto: -
Azione11.580
MOSFET (Metal Oxide)
40 V
33A (Ta), 100A (Tc)
4.5V, 10V
2V @ 250µA
85 nC @ 10 V
6020 pF @ 20 V
±20V
-
3W (Ta), 115W (Tc)
1.4mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TDSON-8 FL
8-PowerTDFN
IRLMS6702TR
Infineon Technologies

MOSFET P-CH 20V 2.4A 6-TSOP

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 15 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 200mOhm @ 1.6A, 4.5V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: Micro6™(SOT23-6)
  • Package / Case: SOT-23-6
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
20 V
2.4A (Ta)
-
700mV @ 250µA (Min)
8.8 nC @ 4.5 V
210 pF @ 15 V
-
-
-
200mOhm @ 1.6A, 4.5V
-
Surface Mount
Micro6™(SOT23-6)
SOT-23-6
GSFC0306
Good-Ark Semiconductor

MOSFETS, N-CH, SINGLE, 30V, 5.5A

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.56W (Tc)
  • Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23
  • Package / Case: TO-236-3, SC-59, SOT-23-3
pacchetto: -
Azione18.000
MOSFET (Metal Oxide)
30 V
5.5A (Tc)
4.5V, 10V
2.5V @ 250µA
7 nC @ 4.5 V
520 pF @ 15 V
±20V
-
1.56W (Tc)
25mOhm @ 4A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
SIL03N10A-TP
Micro Commercial Co

MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W
  • Rds On (Max) @ Id, Vgs: 120mOhm @ 3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-6L
  • Package / Case: SOT-23-6
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
100 V
3A (Ta)
4.5V, 10V
3V @ 250µA
26 nC @ 10 V
1070 pF @ 50 V
±20V
-
1.5W
120mOhm @ 3A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6L
SOT-23-6
MCP200N06Y-BP
Micro Commercial Co

N-CHANNEL MOSFET,TO-220AB(H)

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 200A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4165 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 260W
  • Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB (H)
  • Package / Case: TO-220-3
pacchetto: -
Azione8.310
MOSFET (Metal Oxide)
60 V
200A
10V
4V @ 250µA
65 nC @ 10 V
4165 pF @ 25 V
±20V
-
260W
3.2mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220AB (H)
TO-220-3
SI3134KW-TP
Micro Commercial Co

MOSFET N-CH ENH FET 20VDS 12VGS

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 750mA
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 16 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 200mW (Ta)
  • Rds On (Max) @ Id, Vgs: 380mOhm @ 650mA, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-323
  • Package / Case: SC-70, SOT-323
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
20 V
750mA
1.8V, 4.5V
1V @ 250µA
-
120 pF @ 16 V
±12V
-
200mW (Ta)
380mOhm @ 650mA, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-323
SC-70, SOT-323
SSM3K36TU-LF
Toshiba Semiconductor and Storage

MOSFET N-CH 20V 500MA UFM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 1.23 nC @ 4 V
  • Input Capacitance (Ciss) (Max) @ Vds: 46 pF @ 10 V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 800mW (Ta)
  • Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: UFM
  • Package / Case: 3-SMD, Flat Leads
pacchetto: -
Azione15.840
MOSFET (Metal Oxide)
20 V
500mA (Ta)
1.5V, 5V
1V @ 1mA
1.23 nC @ 4 V
46 pF @ 10 V
±10V
-
800mW (Ta)
630mOhm @ 200mA, 5V
150°C
Surface Mount
UFM
3-SMD, Flat Leads
FQA8N80
Fairchild Semiconductor

N-CHANNEL POWER MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800 V
  • Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 220W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.2Ohm @ 4.2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3P
  • Package / Case: TO-3P-3, SC-65-3
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
800 V
8.4A (Tc)
10V
5V @ 250µA
57 nC @ 10 V
2350 pF @ 25 V
±30V
-
220W (Tc)
1.2Ohm @ 4.2A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-3P
TO-3P-3, SC-65-3
DMT35M7LFV-7
Diodes Incorporated

MOSFET N-CH 30V 76A POWERDI3333

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1667 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.98W (Ta)
  • Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerDI3333-8 (Type UX)
  • Package / Case: 8-PowerVDFN
pacchetto: -
Azione6.000
MOSFET (Metal Oxide)
30 V
76A (Tc)
4.5V, 10V
2.4V @ 250µA
36 nC @ 10 V
1667 pF @ 15 V
±20V
-
1.98W (Ta)
5mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerDI3333-8 (Type UX)
8-PowerVDFN