Immagine |
Numero di parte |
Produttore |
Descrizione |
pacchetto |
Azione |
Quantità |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 55V 42A I-PAK
|
pacchetto: TO-251-3 Short Leads, IPak, TO-251AA |
Azione7.264 |
|
MOSFET (Metal Oxide) | 55V | 42A (Tc) | 10V | 4V @ 100µA | 95nC @ 10V | 2840pF @ 25V | ±20V | - | 140W (Tc) | 7.5 mOhm @ 42A, 10V | -55°C ~ 175°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
||
Toshiba Semiconductor and Storage |
MOSFET N CH 600V 15.8A 5DFN
|
pacchetto: 4-VSFN Exposed Pad |
Azione2.512 |
|
MOSFET (Metal Oxide) | 600V | 15.8A (Ta) | 10V | 3.7V @ 790µA | 38nC @ 10V | 1350pF @ 300V | ±30V | Super Junction | 139W (Tc) | 190 mOhm @ 7.9A, 10V | 150°C (TJ) | Surface Mount | 5-DFN (8x8) | 4-VSFN Exposed Pad |
||
Microsemi Corporation |
MOSFET N-CH
|
pacchetto: TO-205AF Metal Can |
Azione6.240 |
|
MOSFET (Metal Oxide) | 200V | 3.5A (Tc) | 10V | 4V @ 250µA | 14.3nC @ 10V | - | ±20V | - | 800mW (Tc) | 850 mOhm @ 3.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-205AF (TO-39) | TO-205AF Metal Can |
||
Vishay Siliconix |
MOSFET P-CH 20V 4.5A SC70-6
|
pacchetto: PowerPAK? SC-70-6 Dual |
Azione128.220 |
|
MOSFET (Metal Oxide) | 20V | 4.5A (Tc) | 1.8V, 4.5V | 1V @ 250µA | 13nC @ 8V | 355pF @ 10V | ±8V | Schottky Diode (Isolated) | 1.9W (Ta), 6.5W (Tc) | 94 mOhm @ 2.8A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SC-70-6 Dual | PowerPAK? SC-70-6 Dual |
||
Vishay Siliconix |
MOSFET P-CH 20V 7.3A 8-SOIC
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione686.964 |
|
MOSFET (Metal Oxide) | 20V | 7.3A (Ta) | 1.8V, 4.5V | 1V @ 350µA | 50nC @ 5V | - | ±8V | - | 1.35W (Ta) | 17 mOhm @ 9.9A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
ON Semiconductor |
MOSFET N-CH 25V 8.5A IPAK
|
pacchetto: TO-251-3 Short Leads, IPak, TO-251AA |
Azione112.860 |
|
MOSFET (Metal Oxide) | 25V | 8.5A (Ta), 32A (Tc) | 4.5V, 10V | 2V @ 250µA | 14nC @ 4.5V | 1330pF @ 20V | ±20V | - | 1.25W (Ta), 58W (Tc) | 10.5 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Through Hole | I-Pak | TO-251-3 Short Leads, IPak, TO-251AA |
||
ON Semiconductor |
MOSFET P-CH 8V 5.2A CHIPFET
|
pacchetto: 8-SMD, Flat Lead |
Azione5.088 |
|
MOSFET (Metal Oxide) | 8V | 5.2A (Ta) | 1.8V, 4.5V | 450mV @ 250µA | 26nC @ 4.5V | - | ±8V | - | 1.3W (Ta) | 35 mOhm @ 5.2A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | ChipFET? | 8-SMD, Flat Lead |
||
Vishay Siliconix |
MOSFET N-CH 60V 50A D2PAK
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione7.008 |
|
MOSFET (Metal Oxide) | 60V | 50A (Tc) | 10V | 4V @ 250µA | 67nC @ 10V | 1900pF @ 25V | ±20V | - | 3.7W (Ta), 150W (Tc) | 28 mOhm @ 31A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Vishay Siliconix |
MOSFET N-CH 500V 2.5A D2PAK
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione6.960 |
|
MOSFET (Metal Oxide) | 500V | 2.5A (Tc) | 10V | 4.5V @ 250µA | 17nC @ 10V | 340pF @ 25V | ±30V | - | 50W (Tc) | 3 Ohm @ 1.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
STMicroelectronics |
MOSFET N-CH 200V 33A TO-247
|
pacchetto: TO-247-3 |
Azione137.112 |
|
MOSFET (Metal Oxide) | 200V | 33A (Tc) | 10V | 4V @ 250µA | 158nC @ 10V | 2850pF @ 25V | ±20V | - | 180W (Tc) | 85 mOhm @ 16A, 10V | 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
||
Infineon Technologies |
MOSFET N-CH 150V 83A D2PAK
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione17.088 |
|
MOSFET (Metal Oxide) | 150V | 85A (Tc) | 10V | 5V @ 250µA | 110nC @ 10V | 4460pF @ 25V | ±20V | - | 350W (Tc) | 15 mOhm @ 33A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 100V 77A DIRECTFET2
|
pacchetto: DirectFET? Isometric SB |
Azione4.112 |
|
MOSFET (Metal Oxide) | 100V | 4.1A (Ta), 14.4A (Tc) | 10V | 5V @ 25µA | 13nC @ 10V | 515pF @ 25V | ±20V | - | 2.4W (Ta), 30W (Tc) | 62 mOhm @ 8.9A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DIRECTFET SB | DirectFET? Isometric SB |
||
Nexperia USA Inc. |
MOSFET N-CH 120V 70A I2PAK
|
pacchetto: TO-262-3 Long Leads, I2Pak, TO-262AA |
Azione3.904 |
|
MOSFET (Metal Oxide) | 120V | 70A (Tc) | 10V | 4V @ 1mA | 167nC @ 10V | 9473pF @ 60V | ±20V | - | 349W (Tc) | 7.9 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
ON Semiconductor |
MOSFET N-CH 30V 65A SO8FL
|
pacchetto: 8-PowerTDFN |
Azione72.000 |
|
MOSFET (Metal Oxide) | 30V | 17.5A (Ta), 65A (Tc) | 4.5V, 10V | 2.3V @ 1mA | 30.5nC @ 10V | 2100pF @ 15V | ±20V | - | 1.63W (Ta), 22.73W (Tc) | 3.4 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
||
Vishay Siliconix |
MOSFET N-CH 40V 200A PWRPAK 8X8
|
pacchetto: 8-PowerTDFN |
Azione4.800 |
|
MOSFET (Metal Oxide) | 40V | 200A (Tc) | 4.5V, 10V | 2.3V @ 250µA | 195nC @ 4.5V | 20330pF @ 20V | +20V, -16V | - | 158W (Tc) | 0.96 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK? 8 x 8 | 8-PowerTDFN |
||
TSC America Inc. |
MOSFET, SINGLE, N-CHANNEL, TRENC
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione6.304 |
|
MOSFET (Metal Oxide) | 100V | 15A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 9.3nC @ 10V | 1480pF @ 50V | ±20V | - | 50W (Tc) | 90 mOhm @ 5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
STMicroelectronics |
MOSFET N-CH 600V 35A TO-247
|
pacchetto: TO-247-3 |
Azione9.444 |
|
MOSFET (Metal Oxide) | 600V | 35A (Tc) | 10V | 5V @ 250µA | 130nC @ 10V | 4200pF @ 50V | ±30V | - | 255W (Tc) | 88 mOhm @ 17.5A, 10V | 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
||
STMicroelectronics |
N-CHANNEL 650 V, 1.2 OHM TYP., 4
|
pacchetto: TO-220-3 Full Pack |
Azione23.244 |
|
MOSFET (Metal Oxide) | 650V | 4A (Tc) | 10V | 4V @ 250µA | - | 463pF @ 25V | ±30V | - | 620mW (Ta), 77W (Tc) | 2.7 Ohm @ 2A, 10V | -55°C ~ 150°C (TA) | Through Hole | TO-220FP | TO-220-3 Full Pack |
||
Vishay Siliconix |
MOSFET P-CH 50V 1.1A 4-DIP
|
pacchetto: 4-DIP (0.300", 7.62mm) |
Azione51.114 |
|
MOSFET (Metal Oxide) | 50V | 1.1A (Tc) | 10V | 4V @ 250µA | 11nC @ 10V | 240pF @ 25V | ±20V | - | 1W (Tc) | 500 mOhm @ 580mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | 4-DIP, Hexdip, HVMDIP | 4-DIP (0.300", 7.62mm) |
||
Panjit International Inc. |
40V N-CHANNEL ENHANCEMENT MODE M
|
pacchetto: - |
Azione9.000 |
|
MOSFET (Metal Oxide) | 40 V | 31A (Ta), 192A (Tc) | 4.5V, 10V | 2.3V @ 50µA | 75 nC @ 10 V | 4950 pF @ 25 V | ±20V | - | 3.3W (Ta), 125W (Tc) | 1.88mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DFN5060X-8L | 8-PowerTDFN |
||
Panjit International Inc. |
30V N-CHANNEL ENHANCEMENT MODE M
|
pacchetto: - |
Azione19.272 |
|
MOSFET (Metal Oxide) | 30 V | 7A (Ta), 25A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 4.3 nC @ 4.5 V | 392 pF @ 25 V | ±20V | - | 2W (Ta), 25W (Tc) | 25mOhm @ 12A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
Rohm Semiconductor |
PCH -45V -6A POWER MOSFET: RSS06
|
pacchetto: - |
Azione6.225 |
|
MOSFET (Metal Oxide) | 45 V | 6A (Ta) | 4V, 10V | 2.5V @ 1mA | 32.2 nC @ 5 V | 2700 pF @ 10 V | ±20V | - | 1.4W (Ta) | 36mOhm @ 6A, 10V | 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
||
MOSLEADER |
P -20V -3.7A SOT-23N
|
pacchetto: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
onsemi |
N-CHANNEL SILICON MOSFET
|
pacchetto: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Diodes Incorporated |
MOSFET BVDSS: 25V~30V SOT323 T&R
|
pacchetto: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 380mA (Ta) | 4.5V, 10V | 2.6V @ 250µA | 0.36 nC @ 10 V | 19 pF @ 15 V | ±20V | - | 290mW | 900mOhm @ 420mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-323 | SC-70, SOT-323 |
||
IXYS |
MOSFET N-CH TO263
|
pacchetto: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Alpha & Omega Semiconductor Inc. |
MOSFET P-CH 30V 70A TO252
|
pacchetto: - |
Azione35.601 |
|
MOSFET (Metal Oxide) | 30 V | 70A (Tc) | 10V | 2.3V @ 250µA | 70 nC @ 10 V | 2830 pF @ 15 V | ±25V | - | 78W (Tc) | 8mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 (DPAK) | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
Vishay Siliconix |
MOSFET P-CH 60V 50A DPAK
|
pacchetto: - |
Azione10.101 |
|
MOSFET (Metal Oxide) | 60 V | 50A (Tc) | 4.5V, 10V | 3V @ 250µA | 165 nC @ 10 V | 4950 pF @ 25 V | ±20V | - | 2.5W (Ta), 113W (Tc) | 15mOhm @ 17A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
Toshiba Semiconductor and Storage |
P-CH MOSFET, -40 V, -7 A, 0.035O
|
pacchetto: - |
Azione17.949 |
|
MOSFET (Metal Oxide) | 40 V | 7A (Ta) | 4V, 10V | 2V @ 100µA | 24.2 nC @ 10 V | 1020 pF @ 10 V | +10V, -20V | - | 1.5W (Ta) | 35mOhm @ 2.5A, 10V | 150°C | Surface Mount | 6-TSOP-F | 6-SMD, Flat Leads |
||
Nexperia USA Inc. |
SMALL SIGNAL MOSFET FOR AUTOMOTI
|
pacchetto: - |
Azione8.982 |
|
MOSFET (Metal Oxide) | 30 V | 6.1A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 18 nC @ 10 V | 597 pF @ 15 V | ±20V | - | 560mW (Ta), 6.25mW (Tc) | 24mOhm @ 6.1A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SC-74, SOT-457 |