Transistor - FET, MOSFET - Singoli

IRF7422D2PBF

Infineon Technologies

MOSFET P-CH 20V 4.3A 8-SOIC

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
• Vgs(th) (Max) @ Id: 700mV @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 15V
• Vgs (Max): ±12V
• FET Feature: Schottky Diode (Isolated)
• Power Dissipation (Max): 2W (Ta)
• Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.2A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SO
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

pacchetto: 8-SOIC (0.154", 3.90mm Width)

IRFPS3810

Infineon Technologies

MOSFET N-CH 100V 170A SUPER247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 390nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 6790pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 580W (Tc)
• Rds On (Max) @ Id, Vgs: 9 mOhm @ 100A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: SUPER-247 (TO-274AA)
• Package / Case: TO-274AA

pacchetto: TO-274AA

IRL3714TR

Infineon Technologies

MOSFET N-CH 20V 36A TO-220AB

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 47W (Tc)
• Rds On (Max) @ Id, Vgs: 20 mOhm @ 18A, 10V
• Operating Temperature: -
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

pacchetto: TO-220-3

IRL2910STRL

Infineon Technologies

MOSFET N-CH 100V 55A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 140nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 3700pF @ 25V
• Vgs (Max): ±16V
• FET Feature: -
• Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
• Rds On (Max) @ Id, Vgs: 26 mOhm @ 29A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

SFT1342-E

ON Semiconductor

MOSFET P-CH 60V 12A IPAK

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
• Vgs(th) (Max) @ Id: 2.6V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 20V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 15W (Tc)
• Rds On (Max) @ Id, Vgs: 62 mOhm @ 6A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: IPAK/TP
• Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

pacchetto: TO-251-3 Short Leads, IPak, TO-251AA

GP1M008A025PG

Global Power Technologies Group

MOSFET N-CH 250V 8A IPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 250V
• Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 423pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 52W (Tc)
• Rds On (Max) @ Id, Vgs: 600 mOhm @ 4A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: I-Pak
• Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

pacchetto: TO-251-3 Short Leads, IPak, TO-251AA

JANTXV2N6796U

Microsemi Corporation

MOSFET N-CH 100V 8A

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 28.51nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 800mW (Ta), 25W (Tc)
• Rds On (Max) @ Id, Vgs: 195 mOhm @ 8A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 18-ULCC (9.14x7.49)
• Package / Case: 18-BQFN Exposed Pad

pacchetto: 18-BQFN Exposed Pad

SUD50P04-13L-E3

Vishay Siliconix

MOSFET P-CH 40V 60A TO252

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3120pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3W (Ta), 93.7W (Tc)
• Rds On (Max) @ Id, Vgs: 13 mOhm @ 30A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-252, (D-Pak)
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63

PHD18NQ10T,118

NXP

MOSFET N-CH 100V 18A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 633pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 79W (Tc)
• Rds On (Max) @ Id, Vgs: 90 mOhm @ 9A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: DPAK
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63

2SK3309(TE24L,Q)

Toshiba Semiconductor and Storage

MOSFET N-CH 450V 10A TO220SM

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 450V
• Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 10V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 65W (Tc)
• Rds On (Max) @ Id, Vgs: 650 mOhm @ 5A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-220SM
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63

VN0300L

ON Semiconductor

MOSFET N-CH 60V 200MA TO-92

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 350mW (Tc)
• Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 1A, 10V
• Operating Temperature: -
• Mounting Type: Through Hole
• Supplier Device Package: TO-92-3
• Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

SPP11N60S5XKSA1

Infineon Technologies

LOW POWER_LEGACY

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

pacchetto: -

APT70SM70B

Microsemi Corporation

POWER MOSFET - SIC

• FET Type: N-Channel
• Technology: SiCFET (Silicon Carbide)
• Drain to Source Voltage (Vdss): 700V
• Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 20V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 125nC @ 20V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): +25V, -10V
• FET Feature: -
• Power Dissipation (Max): 300W (Tc)
• Rds On (Max) @ Id, Vgs: 70 mOhm @ 32.5A, 20V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247 [B]
• Package / Case: TO-247-3

pacchetto: TO-247-3

IXFA230N075T2-7

IXYS

MOSFET N-CH 75V 230A TO-263-7

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 75V
• Current - Continuous Drain (Id) @ 25°C: 230A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 178nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 10500pF @ 25V
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): 480W (Tc)
• Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 50A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-263-7 (IXTA..7)
• Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

pacchetto: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

DMN6069SFG-13

Diodes Incorporated

MOSFET N-CH 60V 5.6A POWERDI333

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta), 18A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1480pF @ 30V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 930mW (Ta)
• Rds On (Max) @ Id, Vgs: 50 mOhm @ 4.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerDI3333-8
• Package / Case: 8-PowerWDFN

pacchetto: 8-PowerWDFN

AOTF2606L

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 60V 13A TO220F

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 54A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4050pF @ 30V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.1W (Ta), 36.5W (Tc)
• Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220-3F
• Package / Case: TO-220-3 Full Pack

pacchetto: TO-220-3 Full Pack

SQ2361AEES-T1_GE3

Vishay Siliconix

MOSFET P-CH 60V 2.5A SSOT23

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 30V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2W (Tc)
• Rds On (Max) @ Id, Vgs: 170 mOhm @ 2.4A, 10V
• Operating Temperature: -55°C ~ 175°C (TA)
• Mounting Type: Surface Mount
• Supplier Device Package: -
• Package / Case: TO-236-3, SC-59, SOT-23-3

pacchetto: TO-236-3, SC-59, SOT-23-3

SIHF35N60E-GE3

Vishay Siliconix

MOSFET N-CH 600V 32A TO220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 132nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2760pF @ 100V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 39W (Tc)
• Rds On (Max) @ Id, Vgs: 94 mOhm @ 17A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220 Full Pack
• Package / Case: TO-220-3 Full Pack

pacchetto: TO-220-3 Full Pack

IRFS4227TRLPBF

Infineon Technologies

MOSFET N-CH 200V 62A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4600pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 330W (Tc)
• Rds On (Max) @ Id, Vgs: 26 mOhm @ 46A, 10V
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

ZXMP6A18KTC

Diodes Incorporated

MOSFET P-CH 60V 6.8A DPAK

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1580pF @ 30V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.15W (Ta)
• Rds On (Max) @ Id, Vgs: 55 mOhm @ 3.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-252-3
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63

IXFX64N60P

IXYS

MOSFET N-CH 600V 64A PLUS247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 8mA
• Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 12000pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 1040W (Tc)
• Rds On (Max) @ Id, Vgs: 96 mOhm @ 500mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PLUS247?-3
• Package / Case: TO-247-3

pacchetto: TO-247-3

AOT2144L

Alpha & Omega Semiconductor Inc.

N

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40 V
• Current - Continuous Drain (Id) @ 25°C: 205A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 5225 pF @ 20 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 8.3W (Ta), 187W (Tc)
• Rds On (Max) @ Id, Vgs: 2.3mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220
• Package / Case: TO-220-3

pacchetto: -

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PMN230ENEX

Nexperia USA Inc.

MOSFET N-CH 60V 1.6A 6TSOP

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60 V
• Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.7V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 177 pF @ 30 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 475mW (Ta), 3.9W (Tc)
• Rds On (Max) @ Id, Vgs: 222mOhm @ 1.6A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 6-TSOP
• Package / Case: SC-74, SOT-457

pacchetto: -

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SI1079X-T1-GE3

Vishay Siliconix

MOSFET P-CH 30V 1.44A SC89-6

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30 V
• Current - Continuous Drain (Id) @ 25°C: 1.44A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
• Vgs(th) (Max) @ Id: 1.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 15 V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 330mW (Ta)
• Rds On (Max) @ Id, Vgs: 100mOhm @ 1.4A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SC-89-6
• Package / Case: SOT-563, SOT-666

pacchetto: -

SIHD240N60E-GE3

Vishay Siliconix

MOSFET N-CH 600V 12A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600 V
• Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 783 pF @ 100 V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 78W (Tc)
• Rds On (Max) @ Id, Vgs: 240mOhm @ 5.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-252AA
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

pacchetto: -

IRLC024NB

Infineon Technologies

MOSFET 55V 17A DIE

• FET Type: -
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55 V
• Current - Continuous Drain (Id) @ 25°C: 17A
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: 65mOhm @ 17A, 10V
• Operating Temperature: -
• Mounting Type: Surface Mount
• Supplier Device Package: Die
• Package / Case: Die

pacchetto: -

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SI2318A

UMW

SOT-23 N-CHANNEL POWER MOSFETS R

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40 V
• Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta), 5.6A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 20 V
• Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 20 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.25W (Ta), 2.1W (Tc)
• Rds On (Max) @ Id, Vgs: 42mOhm @ 4.3A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23
• Package / Case: TO-236-3, SC-59, SOT-23-3

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NVMFS6H824NT1G

onsemi

MOSFET N-CH 80V 19A/103A 5DFN

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 80 V
• Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 103A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 140µA
• Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 2470 pF @ 40 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.8W (Ta), 115W (Tc)
• Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 5-DFN (5x6) (8-SOFL)
• Package / Case: 8-PowerTDFN, 5 Leads

pacchetto: -

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IPW60R018CFD7XKSA1

Infineon Technologies

MOSFET N CH

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600 V
• Current - Continuous Drain (Id) @ 25°C: 101A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 2.91mA
• Gate Charge (Qg) (Max) @ Vgs: 251 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 9901 pF @ 400 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 416W (Tc)
• Rds On (Max) @ Id, Vgs: 18mOhm @ 58.2A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO247-3
• Package / Case: TO-247-3

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IAUTN12S5N018TATMA1

Infineon Technologies

MOSFET_(120V 300V)

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 120 V
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -55°C ~ 175°C
• Mounting Type: Surface Mount
• Supplier Device Package: PG-HDSOP-16-2
• Package / Case: 16-PowerSOP Module

pacchetto: -