Pagina 1494 - Memoria | Circuiti integrati (CI) | Heisener Electronics
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Memoria

Record 46.059
Pagina  1.494/1.536
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Memory Format
Technology
Memory Size
Memory Interface
Clock Frequency
Write Cycle Time - Word, Page
Access Time
Voltage - Supply
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
FM25040B-GA1TR
Cypress Semiconductor Corp

IC FRAM 4KBIT 14MHZ 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: FRAM
  • Technology: FRAM (Ferroelectric RAM)
  • Memory Size: 4Kb (512 x 8)
  • Memory Interface: SPI
  • Clock Frequency: 14MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione6.848
FRAM
FRAM (Ferroelectric RAM)
4Kb (512 x 8)
SPI
14MHz
-
-
4.5 V ~ 5.5 V
-40°C ~ 125°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
AK93C55CU
AKM Semiconductor Inc.

IC EEPROM 2KBIT 4MHZ 8USON

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 2Kb (128 x 16)
  • Memory Interface: SPI
  • Clock Frequency: 4MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: -
  • Supplier Device Package: 8-USON
pacchetto: -
Azione6.416
EEPROM
EEPROM
2Kb (128 x 16)
SPI
4MHz
-
-
1.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
-
8-USON
MT49H64M9FM-25E:B TR
Micron Technology Inc.

IC RLDRAM 576MBIT 400MHZ 144UBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: DRAM
  • Memory Size: 576Mb (64M x 9)
  • Memory Interface: Parallel
  • Clock Frequency: 400MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 15ns
  • Voltage - Supply: 1.7 V ~ 1.9 V
  • Operating Temperature: 0°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 144-TFBGA
  • Supplier Device Package: 144-µBGA (18.5x11)
pacchetto: 144-TFBGA
Azione7.872
DRAM
DRAM
576Mb (64M x 9)
Parallel
400MHz
-
15ns
1.7 V ~ 1.9 V
0°C ~ 95°C (TC)
Surface Mount
144-TFBGA
144-µBGA (18.5x11)
IS66WV1M16DBLL-70BLI-TR
ISSI, Integrated Silicon Solution Inc

IC PSRAM 16MBIT 70NS 48BGA

  • Memory Type: Volatile
  • Memory Format: PSRAM
  • Technology: PSRAM (Pseudo SRAM)
  • Memory Size: 16Mb (1M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 70ns
  • Access Time: 70ns
  • Voltage - Supply: 2.5 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFBGA
  • Supplier Device Package: 48-TFBGA (6x8)
pacchetto: 48-TFBGA
Azione7.280
PSRAM
PSRAM (Pseudo SRAM)
16Mb (1M x 16)
Parallel
-
70ns
70ns
2.5 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
48-TFBGA
48-TFBGA (6x8)
IDT709199L9PFI8
IDT, Integrated Device Technology Inc

IC SRAM 1.125MBIT 9NS 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Synchronous
  • Memory Size: 1.125Mb (128K x 9)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 9ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x14)
pacchetto: 100-LQFP
Azione4.640
SRAM
SRAM - Dual Port, Synchronous
1.125Mb (128K x 9)
Parallel
-
-
9ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x14)
IS42S16400F-6TL-TR
ISSI, Integrated Silicon Solution Inc

IC SDRAM 64MBIT 166MHZ 54TSOP

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM
  • Memory Size: 64Mb (4M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 166MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 5.4ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 54-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 54-TSOP II
pacchetto: 54-TSOP (0.400", 10.16mm Width)
Azione5.344
DRAM
SDRAM
64Mb (4M x 16)
Parallel
166MHz
-
5.4ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
54-TSOP (0.400", 10.16mm Width)
54-TSOP II
MT29F16G08MAAWP:A TR
Micron Technology Inc.

IC FLASH 16GBIT 48TSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 16Gb (2G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 48-TSOP I
pacchetto: 48-TFSOP (0.724", 18.40mm Width)
Azione2.608
FLASH
FLASH - NAND
16Gb (2G x 8)
Parallel
-
-
-
2.7 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
48-TFSOP (0.724", 18.40mm Width)
48-TSOP I
AT49LV001NT-90JC
Microchip Technology

IC FLASH 1MBIT 90NS 32PLCC

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 1Mb (128K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 50µs
  • Access Time: 90ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 32-LCC (J-Lead)
  • Supplier Device Package: 32-PLCC
pacchetto: 32-LCC (J-Lead)
Azione5.504
FLASH
FLASH
1Mb (128K x 8)
Parallel
-
50µs
90ns
3 V ~ 3.6 V
0°C ~ 70°C (TC)
Surface Mount
32-LCC (J-Lead)
32-PLCC
AT28C256E-15FM/883-815
Microchip Technology

IC EEPROM 256KBIT 150NS 28FLATPK

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 256Kb (32K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 10ms
  • Access Time: 150ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -55°C ~ 125°C (TC)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione4.240
EEPROM
EEPROM
256Kb (32K x 8)
Parallel
-
10ms
150ns
4.5 V ~ 5.5 V
-55°C ~ 125°C (TC)
-
-
-
CY7S1061G30-10ZSXIT
Cypress Semiconductor Corp

IC SRAM 16MBIT 10NS 54TSOP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous
  • Memory Size: 16Mb (1M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 10ns
  • Access Time: 10ns
  • Voltage - Supply: 2.2 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 54-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 54-TSOP II
pacchetto: 54-TSOP (0.400", 10.16mm Width)
Azione3.584
SRAM
SRAM - Synchronous
16Mb (1M x 16)
Parallel
-
10ns
10ns
2.2 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
54-TSOP (0.400", 10.16mm Width)
54-TSOP II
71342LA25PF
IDT, Integrated Device Technology Inc

IC SRAM 32KBIT 25NS 64TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 32Kb (4K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 25ns
  • Access Time: 25ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 64-LQFP
  • Supplier Device Package: 64-TQFP (14x14)
pacchetto: 64-LQFP
Azione2.496
SRAM
SRAM - Dual Port, Asynchronous
32Kb (4K x 8)
Parallel
-
25ns
25ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Surface Mount
64-LQFP
64-TQFP (14x14)
IS42S16320F-6BL-TR
ISSI, Integrated Silicon Solution Inc

IC SDRAM 512MBIT 167MHZ 54BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM
  • Memory Size: 512Mb (32M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 167MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 5.4ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 54-TFBGA
  • Supplier Device Package: 54-TWBGA (13x8)
pacchetto: 54-TFBGA
Azione3.936
DRAM
SDRAM
512Mb (32M x 16)
Parallel
167MHz
-
5.4ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
54-TFBGA
54-TWBGA (13x8)
IS43TR16128B-15HBLI-TR
ISSI, Integrated Silicon Solution Inc

IC SDRAM 2GBIT 667MHZ 96BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3
  • Memory Size: 2Gb (128M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 667MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 20ns
  • Voltage - Supply: 1.425 V ~ 1.575 V
  • Operating Temperature: -40°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 96-TFBGA
  • Supplier Device Package: 96-TWBGA (9x13)
pacchetto: 96-TFBGA
Azione3.728
DRAM
SDRAM - DDR3
2Gb (128M x 16)
Parallel
667MHz
15ns
20ns
1.425 V ~ 1.575 V
-40°C ~ 95°C (TC)
Surface Mount
96-TFBGA
96-TWBGA (9x13)
hot AS7C34096A-12TCN
Alliance Memory, Inc.

IC SRAM 4MBIT 12NS 44TSOP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 4Mb (512K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 12ns
  • Access Time: 12ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 44-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 44-TSOP II
pacchetto: 44-TSOP (0.400", 10.16mm Width)
Azione7.264
SRAM
SRAM - Asynchronous
4Mb (512K x 8)
Parallel
-
12ns
12ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
44-TSOP (0.400", 10.16mm Width)
44-TSOP II
IS62WV12816BLL-45TLI
ISSI, Integrated Silicon Solution Inc

IC SRAM 2MBIT 55NS 44TSOP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 2Mb (128K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 55ns
  • Access Time: 55ns
  • Voltage - Supply: 2.5 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 44-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 44-TSOP II
pacchetto: 44-TSOP (0.400", 10.16mm Width)
Azione3.392
SRAM
SRAM - Asynchronous
2Mb (128K x 16)
Parallel
-
55ns
55ns
2.5 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
44-TSOP (0.400", 10.16mm Width)
44-TSOP II
71024S12YGI8
IDT, Integrated Device Technology Inc

IC SRAM 1MBIT 12NS 32SOJ

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 1Mb (128K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 12ns
  • Access Time: 12ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 32-BSOJ (0.400", 10.16mm Width)
  • Supplier Device Package: 32-SOJ
pacchetto: 32-BSOJ (0.400", 10.16mm Width)
Azione3.232
SRAM
SRAM - Asynchronous
1Mb (128K x 8)
Parallel
-
12ns
12ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
32-BSOJ (0.400", 10.16mm Width)
32-SOJ
M25P16-V6D11
Micron Technology Inc.

IC FLASH

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 16Mb (2M x 8)
  • Memory Interface: SPI
  • Clock Frequency: 75MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione2.672
FLASH
FLASH - NOR
16Mb (2M x 8)
SPI
75MHz
-
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
-
-
-
93LC56AT-E/MNY
Microchip Technology

IC EEPROM 2KBIT 2MHZ 8TDFN

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 2Kb (256 x 8)
  • Memory Interface: SPI
  • Clock Frequency: 2MHz
  • Write Cycle Time - Word, Page: 6ms
  • Access Time: -
  • Voltage - Supply: 2.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WFDFN Exposed Pad
  • Supplier Device Package: 8-TDFN (2x3)
pacchetto: 8-WFDFN Exposed Pad
Azione3.488
EEPROM
EEPROM
2Kb (256 x 8)
SPI
2MHz
6ms
-
2.5 V ~ 5.5 V
-40°C ~ 125°C (TA)
Surface Mount
8-WFDFN Exposed Pad
8-TDFN (2x3)
93AA56AXT-I/SN
Microchip Technology

IC EEPROM 2KBIT 2MHZ 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 2Kb (256 x 8)
  • Memory Interface: SPI
  • Clock Frequency: 2MHz
  • Write Cycle Time - Word, Page: 6ms
  • Access Time: -
  • Voltage - Supply: 1.8 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione5.376
EEPROM
EEPROM
2Kb (256 x 8)
SPI
2MHz
6ms
-
1.8 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
CAT24C04WI-GT3JN
ON Semiconductor

IC EEPROM 4KBIT 400KHZ 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 4Kb (512 x 8)
  • Memory Interface: I2C
  • Clock Frequency: 400kHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 900ns
  • Voltage - Supply: 1.7 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione4.608
EEPROM
EEPROM
4Kb (512 x 8)
I2C
400kHz
5ms
900ns
1.7 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
hot DS1230Y-200IND+
Maxim Integrated

IC NVSRAM 256KBIT 200NS 28EDIP

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 256Kb (32K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 200ns
  • Access Time: 200ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 28-DIP Module (0.600", 15.24mm)
  • Supplier Device Package: 28-EDIP
pacchetto: 28-DIP Module (0.600", 15.24mm)
Azione5.760
NVSRAM
NVSRAM (Non-Volatile SRAM)
256Kb (32K x 8)
Parallel
-
200ns
200ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Through Hole
28-DIP Module (0.600", 15.24mm)
28-EDIP
DS1230Y-120IND+
Maxim Integrated

IC NVSRAM 256KBIT 120NS 28EDIP

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 256Kb (32K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 120ns
  • Access Time: 120ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 28-DIP Module (0.600", 15.24mm)
  • Supplier Device Package: 28-EDIP
pacchetto: 28-DIP Module (0.600", 15.24mm)
Azione5.152
NVSRAM
NVSRAM (Non-Volatile SRAM)
256Kb (32K x 8)
Parallel
-
120ns
120ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Through Hole
28-DIP Module (0.600", 15.24mm)
28-EDIP
SST25VF512A-33-4I-SAE
Microchip Technology

IC FLASH 512KBIT 33MHZ 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 512Kb (64K x 8)
  • Memory Interface: SPI
  • Clock Frequency: 33MHz
  • Write Cycle Time - Word, Page: 20µs
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione18.090
FLASH
FLASH
512Kb (64K x 8)
SPI
33MHz
20µs
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
S25FS256SAGNFI001
Cypress Semiconductor Corp

IC FLASH 256MBIT 133MHZ 8WSON

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 256Mb (32M x 8)
  • Memory Interface: SPI - Quad I/O, QPI
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.7 V ~ 2 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WDFN Exposed Pad
  • Supplier Device Package: 8-WSON (6x8)
pacchetto: 8-WDFN Exposed Pad
Azione7.984
FLASH
FLASH - NOR
256Mb (32M x 8)
SPI - Quad I/O, QPI
133MHz
-
-
1.7 V ~ 2 V
-40°C ~ 85°C (TA)
Surface Mount
8-WDFN Exposed Pad
8-WSON (6x8)
25AA040A/W16K
Microchip Technology

IC EEPROM 4K SPI 10MHZ WAFER

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 4Kb (512 x 8)
  • Memory Interface: SPI
  • Clock Frequency: 10MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 1.8 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
pacchetto: Die
Azione7.376
EEPROM
EEPROM
4Kb (512 x 8)
SPI
10MHz
5ms
-
1.8 V ~ 5.5 V
0°C ~ 70°C (TA)
Surface Mount
Die
Die
S29AL016J55TFI023
Cypress Semiconductor Corp

IC FLASH 16M PARALLEL 48TSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 16Mb (2M x 8, 1M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 55ns
  • Access Time: 55ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 48-TSOP
pacchetto: 48-TFSOP (0.724", 18.40mm Width)
Azione7.680
FLASH
FLASH - NOR
16Mb (2M x 8, 1M x 16)
Parallel
-
55ns
55ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
48-TFSOP (0.724", 18.40mm Width)
48-TSOP
AT25SL321-UUE-T
Adesto Technologies

8-WLCSP,IND TEMP, 1.8V, T&R

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 32Mb (4M x 8)
  • Memory Interface: SPI - Quad I/O, QPI
  • Clock Frequency: 104MHz
  • Write Cycle Time - Word, Page: 150µs, 5ms
  • Access Time: -
  • Voltage - Supply: 1.7 V ~ 2 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-UFBGA, WLCSP
  • Supplier Device Package: 8-WLCSP (1.55x2.28)
pacchetto: 8-UFBGA, WLCSP
Azione5.712
FLASH
FLASH
32Mb (4M x 8)
SPI - Quad I/O, QPI
104MHz
150µs, 5ms
-
1.7 V ~ 2 V
-40°C ~ 85°C (TA)
Surface Mount
8-UFBGA, WLCSP
8-WLCSP (1.55x2.28)
MTFC64GAPALBH-AIT ES TR
Micron Technology Inc.

IC FLASH 512G MMC

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 512Gb (64G x 8)
  • Memory Interface: MMC
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione6.000
FLASH
FLASH - NAND
512Gb (64G x 8)
MMC
-
-
-
-
-40°C ~ 85°C (TA)
-
-
-
MT29F16G08CBACAWP-IT:C TR
Micron Technology Inc.

IC FLASH 16G PARALLEL 48TSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 16Gb (2G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione4.800
FLASH
FLASH - NAND
16Gb (2G x 8)
Parallel
-
-
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
-
-
-
EDFA164A2PP-GD-F-R TR
Micron Technology Inc.

IC DRAM 16G PARALLEL 800MHZ

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR3
  • Memory Size: 16Gb (256M x 64)
  • Memory Interface: Parallel
  • Clock Frequency: 800MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.14 V ~ 1.95 V
  • Operating Temperature: -30°C ~ 85°C (TC)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione2.112
DRAM
SDRAM - Mobile LPDDR3
16Gb (256M x 64)
Parallel
800MHz
-
-
1.14 V ~ 1.95 V
-30°C ~ 85°C (TC)
-
-
-