Pagina 32 - Memoria | Circuiti integrati (CI) | Heisener Electronics
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Memoria

Record 62.144
Pagina  32/2.220
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Memory Format
Technology
Memory Size
Memory Interface
Clock Frequency
Write Cycle Time - Word, Page
Access Time
Voltage - Supply
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
AT45DB081D-SSU-SL383
Adesto Technologies

IC FLASH 8MBIT 66MHZ 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 8Mb (264 Bytes x 4096 pages)
  • Memory Interface: SPI
  • Clock Frequency: 66MHz
  • Write Cycle Time - Word, Page: 4ms
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione5.472
FLASH
FLASH
8Mb (264 Bytes x 4096 pages)
SPI
66MHz
4ms
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TC)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
N25Q256A33EF840F
Micron Technology Inc.

IC FLASH 256MBIT 108MHZ 8VPDFN

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 256Mb (64M x 4)
  • Memory Interface: SPI
  • Clock Frequency: 108MHz
  • Write Cycle Time - Word, Page: 8ms, 5ms
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-VDFN Exposed Pad
  • Supplier Device Package: 8-VDFPN (MLP8) (8x6)
pacchetto: 8-VDFN Exposed Pad
Azione5.248
FLASH
FLASH - NOR
256Mb (64M x 4)
SPI
108MHz
8ms, 5ms
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
8-VDFN Exposed Pad
8-VDFPN (MLP8) (8x6)
93C86AT-I/ST
Microchip Technology

IC EEPROM 16KBIT 3MHZ 8TSSOP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 16Kb (2K x 8)
  • Memory Interface: SPI
  • Clock Frequency: 3MHz
  • Write Cycle Time - Word, Page: 2ms
  • Access Time: -
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
pacchetto: 8-TSSOP (0.173", 4.40mm Width)
Azione2.656
EEPROM
EEPROM
16Kb (2K x 8)
SPI
3MHz
2ms
-
4.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
AT49BV002-12JC
Microchip Technology

IC FLASH 2MBIT 120NS 32PLCC

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 2Mb (256K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 50µs
  • Access Time: 120ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 32-LCC (J-Lead)
  • Supplier Device Package: 32-PLCC
pacchetto: 32-LCC (J-Lead)
Azione4.992
FLASH
FLASH
2Mb (256K x 8)
Parallel
-
50µs
120ns
2.7 V ~ 3.6 V
0°C ~ 70°C (TC)
Surface Mount
32-LCC (J-Lead)
32-PLCC
7005L45J
IDT, Integrated Device Technology Inc

IC SRAM 64KBIT 45NS 68PLCC

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 64Kb (8K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 45ns
  • Access Time: 45ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 68-LCC (J-Lead)
  • Supplier Device Package: 68-PLCC (24.21x24.21)
pacchetto: 68-LCC (J-Lead)
Azione4.288
SRAM
SRAM - Dual Port, Asynchronous
64Kb (8K x 8)
Parallel
-
45ns
45ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Surface Mount
68-LCC (J-Lead)
68-PLCC (24.21x24.21)
IS43DR82560B-3DBLI
ISSI, Integrated Silicon Solution Inc

IC SDRAM 2GBIT 333MHZ 60BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR2
  • Memory Size: 2Gb (256M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 333MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 450ps
  • Voltage - Supply: 1.7 V ~ 1.9 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 60-TFBGA
  • Supplier Device Package: 60-TWBGA (10.5x13)
pacchetto: 60-TFBGA
Azione3.632
DRAM
SDRAM - DDR2
2Gb (256M x 8)
Parallel
333MHz
15ns
450ps
1.7 V ~ 1.9 V
-40°C ~ 85°C (TA)
Surface Mount
60-TFBGA
60-TWBGA (10.5x13)
IS42S16320D-6TL-TR
ISSI, Integrated Silicon Solution Inc

IC SDRAM 512MBIT 166MHZ 54TSOP

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM
  • Memory Size: 512Mb (32M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 166MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 5.4ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 54-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 54-TSOP II
pacchetto: 54-TSOP (0.400", 10.16mm Width)
Azione3.712
DRAM
SDRAM
512Mb (32M x 16)
Parallel
166MHz
-
5.4ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
54-TSOP (0.400", 10.16mm Width)
54-TSOP II
71V25761S200PFGI8
IDT, Integrated Device Technology Inc

IC SRAM 4.5MBIT 200MHZ 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous
  • Memory Size: 4.5Mb (128K x 36)
  • Memory Interface: Parallel
  • Clock Frequency: 200MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 3.1ns
  • Voltage - Supply: 3.135 V ~ 3.465 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x14)
pacchetto: 100-LQFP
Azione5.552
SRAM
SRAM - Synchronous
4.5Mb (128K x 36)
Parallel
200MHz
-
3.1ns
3.135 V ~ 3.465 V
-40°C ~ 85°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x14)
MT25QL256ABA8E12-0AAT TR
Micron Technology Inc.

IC FLASH 256MBIT 133MHZ 24TBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 256Mb (32M x 8)
  • Memory Interface: SPI
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: 8ms, 2.8ms
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione2.016
FLASH
FLASH - NOR
256Mb (32M x 8)
SPI
133MHz
8ms, 2.8ms
-
2.7 V ~ 3.6 V
-40°C ~ 105°C (TA)
-
-
-
hot 24AA128-I/MF
Microchip Technology

IC EEPROM 128KBIT 400KHZ 8DFN

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 128Kb (16K x 8)
  • Memory Interface: I2C
  • Clock Frequency: 400kHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 900ns
  • Voltage - Supply: 1.7 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-VDFN Exposed Pad
  • Supplier Device Package: 8-DFN-S (6x5)
pacchetto: 8-VDFN Exposed Pad
Azione10.128
EEPROM
EEPROM
128Kb (16K x 8)
I2C
400kHz
5ms
900ns
1.7 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-VDFN Exposed Pad
8-DFN-S (6x5)
24AA025T-I/MNY
Microchip Technology

IC EEPROM 2KBIT 400KHZ 8TDFN

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 2Kb (256 x 8)
  • Memory Interface: I2C
  • Clock Frequency: 400kHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 900ns
  • Voltage - Supply: 1.7 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WFDFN Exposed Pad
  • Supplier Device Package: 8-TDFN (2x3)
pacchetto: 8-WFDFN Exposed Pad
Azione6.448
EEPROM
EEPROM
2Kb (256 x 8)
I2C
400kHz
5ms
900ns
1.7 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-WFDFN Exposed Pad
8-TDFN (2x3)
hot AT24C128C-SSHM-T
Microchip Technology

IC EEPROM 128KBIT 1MHZ 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 128Kb (16K x 8)
  • Memory Interface: I2C
  • Clock Frequency: 1MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 550ns
  • Voltage - Supply: 1.7 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione90.696
EEPROM
EEPROM
128Kb (16K x 8)
I2C
1MHz
5ms
550ns
1.7 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
34AA04T-I/SN
Microchip Technology

IC EEPROM 4KBIT 1MHZ 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 4Kb (256 x 8 x 2)
  • Memory Interface: I2C
  • Clock Frequency: 1MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 350ns
  • Voltage - Supply: 1.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione4.000
EEPROM
EEPROM
4Kb (256 x 8 x 2)
I2C
1MHz
5ms
350ns
1.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
S-25C320A0I-T8T1U3
SII Semiconductor Corporation

IC EEPROM 32KBIT 5MHZ 8TSSOP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 32Kb (4K x 8)
  • Memory Interface: SPI
  • Clock Frequency: 5MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 1.6 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
pacchetto: 8-TSSOP (0.173", 4.40mm Width)
Azione5.136
EEPROM
EEPROM
32Kb (4K x 8)
SPI
5MHz
5ms
-
1.6 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
hot 24LC00T/SN
Microchip Technology

IC EEPROM 128BIT 400KHZ 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 128b (16 x 8)
  • Memory Interface: I2C
  • Clock Frequency: 400kHz
  • Write Cycle Time - Word, Page: 4ms
  • Access Time: 3500ns
  • Voltage - Supply: 2.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione114.564
EEPROM
EEPROM
128b (16 x 8)
I2C
400kHz
4ms
3500ns
2.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
FT25L04S-RT
Fremont Micro Devices USA

IC FLASH 4MBIT 40MHZ 8SOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 4Mb (512K x 8)
  • Memory Interface: SPI
  • Clock Frequency: 40MHz
  • Write Cycle Time - Word, Page: 2.6ms
  • Access Time: -
  • Voltage - Supply: 1.65 V ~ 1.95 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione24.372
FLASH
FLASH
4Mb (512K x 8)
SPI
40MHz
2.6ms
-
1.65 V ~ 1.95 V
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
hot 24C02C-I/SN
Microchip Technology

IC EEPROM 2KBIT 400KHZ 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 2Kb (256 x 8)
  • Memory Interface: I2C
  • Clock Frequency: 400kHz
  • Write Cycle Time - Word, Page: 1ms
  • Access Time: 900ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione81.264
EEPROM
EEPROM
2Kb (256 x 8)
I2C
400kHz
1ms
900ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
MT53D1024M32D4DT-046 AIT:D
Micron Technology Inc.

IC DRAM 32G 2133MHZ FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR4
  • Memory Size: 32Gb (1G x 32)
  • Memory Interface: -
  • Clock Frequency: 2133MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.1V
  • Operating Temperature: -40°C ~ 95°C (TC)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione2.736
DRAM
SDRAM - Mobile LPDDR4
32Gb (1G x 32)
-
2133MHz
-
-
1.1V
-40°C ~ 95°C (TC)
-
-
-
S29GL01GS10FHI023
Cypress Semiconductor Corp

IC FLASH 1G PARALLEL 64BGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 1Gb (64M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 60ns
  • Access Time: 100ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 64-LBGA
  • Supplier Device Package: 64-FBGA (13x11)
pacchetto: 64-LBGA
Azione5.936
FLASH
FLASH - NOR
1Gb (64M x 16)
Parallel
-
60ns
100ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
64-LBGA
64-FBGA (13x11)
70261S35PFI
IDT, Integrated Device Technology Inc

IC SRAM 256K PARALLEL 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 256Kb (16K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 35ns
  • Access Time: 35ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x14)
pacchetto: 100-LQFP
Azione3.456
SRAM
SRAM - Dual Port, Asynchronous
256Kb (16K x 16)
Parallel
-
35ns
35ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x14)
CY27H010-45PC
Cypress Semiconductor Corp

IC EPROM 1MBIT PARALLEL 32DIP

  • Memory Type: Non-Volatile
  • Memory Format: EPROM
  • Technology: EPROM - UV
  • Memory Size: 1Mbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 45 ns
  • Voltage - Supply: 4.5V ~ 5.5V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 32-DIP (0.600", 15.24mm)
  • Supplier Device Package: 32-PDIP
pacchetto: -
Request a Quote
EPROM
EPROM - UV
1Mbit
Parallel
-
-
45 ns
4.5V ~ 5.5V
0°C ~ 70°C (TA)
Through Hole
32-DIP (0.600", 15.24mm)
32-PDIP
S27KL0643DPBHB020
Infineon Technologies

IC PSRAM 64MBIT SPI/OCTAL 24FBGA

  • Memory Type: Volatile
  • Memory Format: PSRAM
  • Technology: PSRAM (Pseudo SRAM)
  • Memory Size: 64Mbit
  • Memory Interface: SPI - Octal I/O
  • Clock Frequency: 166 MHz
  • Write Cycle Time - Word, Page: 36ns
  • Access Time: 36 ns
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 24-VBGA
  • Supplier Device Package: 24-FBGA (6x8)
pacchetto: -
Request a Quote
PSRAM
PSRAM (Pseudo SRAM)
64Mbit
SPI - Octal I/O
166 MHz
36ns
36 ns
2.7V ~ 3.6V
-40°C ~ 105°C (TA)
Surface Mount
24-VBGA
24-FBGA (6x8)
EM6GE16EWXD-10IH
Etron Technology, Inc.

IC DRAM 4GBIT PAR 96FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3
  • Memory Size: 4Gbit
  • Memory Interface: Parallel
  • Clock Frequency: 933 MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 20 ns
  • Voltage - Supply: 1.425V ~ 1.575V
  • Operating Temperature: -40°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 96-TFBGA
  • Supplier Device Package: 96-FBGA (9x13)
pacchetto: -
Request a Quote
DRAM
SDRAM - DDR3
4Gbit
Parallel
933 MHz
15ns
20 ns
1.425V ~ 1.575V
-40°C ~ 95°C (TC)
Surface Mount
96-TFBGA
96-FBGA (9x13)
W66AP6NBUAFJ
Winbond Electronics

1GB LPDDR4, X16, 1600MHZ, -40C~1

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR4
  • Memory Size: 1Gbit
  • Memory Interface: LVSTL_11
  • Clock Frequency: 1.6 GHz
  • Write Cycle Time - Word, Page: 18ns
  • Access Time: 3.6 ns
  • Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
  • Operating Temperature: -40°C ~ 105°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 200-WFBGA
  • Supplier Device Package: 200-WFBGA (10x14.5)
pacchetto: -
Request a Quote
DRAM
SDRAM - Mobile LPDDR4
1Gbit
LVSTL_11
1.6 GHz
18ns
3.6 ns
1.06V ~ 1.17V, 1.7V ~ 1.95V
-40°C ~ 105°C (TC)
Surface Mount
200-WFBGA
200-WFBGA (10x14.5)
M30042040054X0PWAR
Renesas Electronics Corporation

IC RAM 4MBIT 54MHZ 8DFN

  • Memory Type: Non-Volatile
  • Memory Format: RAM
  • Technology: MRAM (Magnetoresistive RAM)
  • Memory Size: 4Mbit
  • Memory Interface: -
  • Clock Frequency: 54 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 105°C
  • Mounting Type: Surface Mount
  • Package / Case: 8-WDFN Exposed Pad
  • Supplier Device Package: 8-DFN (5x6)
pacchetto: -
Request a Quote
RAM
MRAM (Magnetoresistive RAM)
4Mbit
-
54 MHz
-
-
2.7V ~ 3.6V
-40°C ~ 105°C
Surface Mount
8-WDFN Exposed Pad
8-DFN (5x6)
CY62128DV30LL-55ZAXIT
Cypress Semiconductor Corp

IC SRAM 1MBIT PARALLEL 32TSOP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 1Mbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 55ns
  • Access Time: 55 ns
  • Voltage - Supply: 2.2V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 32-TFSOP (0.465", 11.80mm Width)
  • Supplier Device Package: 32-TSOP
pacchetto: -
Request a Quote
SRAM
SRAM - Asynchronous
1Mbit
Parallel
-
55ns
55 ns
2.2V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
32-TFSOP (0.465", 11.80mm Width)
32-TSOP
MT62F768M64D4EK-023-AAT-C-TR
Micron Technology Inc.

LPDDR5 48GBIT 64 441/441 TFBGA 4

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR5X
  • Memory Size: 48Gbit
  • Memory Interface: LVSTL
  • Clock Frequency: 4.266 GHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.01V ~ 1.12V
  • Operating Temperature: -40°C ~ 105°C
  • Mounting Type: Surface Mount
  • Package / Case: 441-TFBGA
  • Supplier Device Package: 441-TFBGA (14x14)
pacchetto: -
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DRAM
SDRAM - Mobile LPDDR5X
48Gbit
LVSTL
4.266 GHz
-
-
1.01V ~ 1.12V
-40°C ~ 105°C
Surface Mount
441-TFBGA
441-TFBGA (14x14)
IS46TR16256BL-125KBLA2
ISSI, Integrated Silicon Solution Inc

IC DRAM 4GBIT PARALLEL 96TWBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3L
  • Memory Size: 4Gbit
  • Memory Interface: Parallel
  • Clock Frequency: 800 MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 20 ns
  • Voltage - Supply: 1.283V ~ 1.45V
  • Operating Temperature: -40°C ~ 105°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 96-TFBGA
  • Supplier Device Package: 96-TWBGA (9x13)
pacchetto: -
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DRAM
SDRAM - DDR3L
4Gbit
Parallel
800 MHz
15ns
20 ns
1.283V ~ 1.45V
-40°C ~ 105°C (TC)
Surface Mount
96-TFBGA
96-TWBGA (9x13)