Pagina 7 - Memoria | Circuiti integrati (CI) | Heisener Electronics
Contattaci
SalesDept@heisener.com +86-755-83210559 ext. 803
Language Translation

* Please refer to the English Version as our Official Version.

Memoria

Record 62.144
Pagina  7/2.220
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Memory Format
Technology
Memory Size
Memory Interface
Clock Frequency
Write Cycle Time - Word, Page
Access Time
Voltage - Supply
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
EDFP164A3PD-GD-F-D
Micron Technology Inc.

LPDDR3 192MX128 PLASTIC GREEN VF

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione4.896
-
-
-
-
-
-
-
-
-
-
-
-
MTFC32GJUEF-AIT
Micron Technology Inc.

IC FLASH 256GBIT 169TFBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 256Gb (32G x 8)
  • Memory Interface: MMC
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 169-TFBGA
  • Supplier Device Package: 169-TFBGA (14x18)
pacchetto: 169-TFBGA
Azione2.592
FLASH
FLASH - NAND
256Gb (32G x 8)
MMC
-
-
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
169-TFBGA
169-TFBGA (14x18)
hot MT46H128M16LFB7-6 IT:B
Micron Technology Inc.

IC SDRAM 2GBIT 167MHZ 60VFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR
  • Memory Size: 2Gb (128M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 166MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 5.0ns
  • Voltage - Supply: 1.7 V ~ 1.95 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 60-VFBGA
  • Supplier Device Package: 60-VFBGA (10x10)
pacchetto: 60-VFBGA
Azione111.024
DRAM
SDRAM - Mobile LPDDR
2Gb (128M x 16)
Parallel
166MHz
15ns
5.0ns
1.7 V ~ 1.95 V
-40°C ~ 85°C (TA)
Surface Mount
60-VFBGA
60-VFBGA (10x10)
MT29F64G08AKABAC5:B
Micron Technology Inc.

IC FLASH 64GBIT 52VLGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 64Gb (8G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 52-VLGA
  • Supplier Device Package: 52-VLGA (18x14)
pacchetto: 52-VLGA
Azione6.160
FLASH
FLASH - NAND
64Gb (8G x 8)
Parallel
-
-
-
2.7 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
52-VLGA
52-VLGA (18x14)
IDT71V3577SA75BQG
IDT, Integrated Device Technology Inc

IC SRAM 4.5MBIT 7.5NS 165CABGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous
  • Memory Size: 4.5Mb (128K x 36)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 7.5ns
  • Voltage - Supply: 3.135 V ~ 3.465 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 165-TBGA
  • Supplier Device Package: 165-CABGA (13x15)
pacchetto: 165-TBGA
Azione2.624
SRAM
SRAM - Synchronous
4.5Mb (128K x 36)
Parallel
-
-
7.5ns
3.135 V ~ 3.465 V
0°C ~ 70°C (TA)
Surface Mount
165-TBGA
165-CABGA (13x15)
AT29C020-70JU-T
Microchip Technology

IC FLASH 2MBIT 70NS 32PLCC

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 2Mb (256K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 10ms
  • Access Time: 70ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 32-LCC (J-Lead)
  • Supplier Device Package: 32-PLCC
pacchetto: 32-LCC (J-Lead)
Azione4.848
FLASH
FLASH
2Mb (256K x 8)
Parallel
-
10ms
70ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TC)
Surface Mount
32-LCC (J-Lead)
32-PLCC
70V9089L12PFI8
IDT, Integrated Device Technology Inc

IC SRAM 512KBIT 12NS 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Synchronous
  • Memory Size: 512Kb (64K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 12ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x14)
pacchetto: 100-LQFP
Azione7.120
SRAM
SRAM - Dual Port, Synchronous
512Kb (64K x 8)
Parallel
-
-
12ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x14)
71V65603S100BQGI8
IDT, Integrated Device Technology Inc

IC SRAM 9MBIT 100MHZ 165CABGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous ZBT
  • Memory Size: 9Mb (256K x 36)
  • Memory Interface: Parallel
  • Clock Frequency: 100MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 5ns
  • Voltage - Supply: 3.135 V ~ 3.465 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 165-TBGA
  • Supplier Device Package: 165-CABGA (13x15)
pacchetto: 165-TBGA
Azione7.664
SRAM
SRAM - Synchronous ZBT
9Mb (256K x 36)
Parallel
100MHz
-
5ns
3.135 V ~ 3.465 V
-40°C ~ 85°C (TA)
Surface Mount
165-TBGA
165-CABGA (13x15)
71V67803S150PFG8
IDT, Integrated Device Technology Inc

IC SRAM 9MBIT 150MHZ 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous
  • Memory Size: 9Mb (512K x 18)
  • Memory Interface: Parallel
  • Clock Frequency: 150MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 3.8ns
  • Voltage - Supply: 3.135 V ~ 3.465 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x14)
pacchetto: 100-LQFP
Azione2.368
SRAM
SRAM - Synchronous
9Mb (512K x 18)
Parallel
150MHz
-
3.8ns
3.135 V ~ 3.465 V
0°C ~ 70°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x14)
AS7C32098A-12TIN
Alliance Memory, Inc.

IC SRAM 2MBIT 12NS 44TSOP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 2Mb (128K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 12ns
  • Access Time: 12ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 44-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 44-TSOP II
pacchetto: 44-TSOP (0.400", 10.16mm Width)
Azione6.496
SRAM
SRAM - Asynchronous
2Mb (128K x 16)
Parallel
-
12ns
12ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
44-TSOP (0.400", 10.16mm Width)
44-TSOP II
M25PX32-VZM6FBA TR
Micron Technology Inc.

IC FLASH 32MBIT 75MHZ 24TBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 32Mb (4M x 8)
  • Memory Interface: SPI
  • Clock Frequency: 75MHz
  • Write Cycle Time - Word, Page: 15ms, 5ms
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 24-TBGA
  • Supplier Device Package: 24-T-PBGA (6x8)
pacchetto: 24-TBGA
Azione7.312
FLASH
FLASH - NOR
32Mb (4M x 8)
SPI
75MHz
15ms, 5ms
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
24-TBGA
24-T-PBGA (6x8)
W25Q64JVZEIM TR
Winbond Electronics

IC FLASH 64MBIT SPI 8WSON

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 64Mb (8M x 8)
  • Memory Interface: SPI
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: 3ms
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione7.984
FLASH
FLASH - NOR
64Mb (8M x 8)
SPI
133MHz
3ms
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
-
-
-
24LC04BH-E/ST
Microchip Technology

IC EEPROM 4KBIT 400KHZ 8TSSOP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 4Kb (256 x 8 x 2)
  • Memory Interface: I2C
  • Clock Frequency: 400kHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 900ns
  • Voltage - Supply: 2.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
pacchetto: 8-TSSOP (0.173", 4.40mm Width)
Azione4.480
EEPROM
EEPROM
4Kb (256 x 8 x 2)
I2C
400kHz
5ms
900ns
2.5 V ~ 5.5 V
-40°C ~ 125°C (TA)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
BR24S08FVM-WTR
Rohm Semiconductor

IC EEPROM 8KBIT 400KHZ 8MSOP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 8Kb (1K x 8)
  • Memory Interface: I2C
  • Clock Frequency: 400kHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 1.7 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
  • Supplier Device Package: 8-MSOP
pacchetto: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Azione5.760
EEPROM
EEPROM
8Kb (1K x 8)
I2C
400kHz
5ms
-
1.7 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
8-MSOP
MT41K1G4DA-107:P
Micron Technology Inc.

IC SDRAM 4GBIT 933MHZ 78FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3L
  • Memory Size: 4Gb (1G x 4)
  • Memory Interface: Parallel
  • Clock Frequency: 933MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 20ns
  • Voltage - Supply: 1.283 V ~ 1.45 V
  • Operating Temperature: 0°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 78-TFBGA
  • Supplier Device Package: 78-FBGA (8x10.5)
pacchetto: 78-TFBGA
Azione14.898
DRAM
SDRAM - DDR3L
4Gb (1G x 4)
Parallel
933MHz
-
20ns
1.283 V ~ 1.45 V
0°C ~ 95°C (TC)
Surface Mount
78-TFBGA
78-FBGA (8x10.5)
W25Q128FWPIG
Winbond Electronics

IC FLASH 128MBIT 104MHZ 8WSON

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 128Mb (16M x 8)
  • Memory Interface: SPI
  • Clock Frequency: 104MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 1.65 V ~ 1.95 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WDFN Exposed Pad
  • Supplier Device Package: 8-WSON (6x5)
pacchetto: 8-WDFN Exposed Pad
Azione92.094
FLASH
FLASH - NOR
128Mb (16M x 8)
SPI
104MHz
5ms
-
1.65 V ~ 1.95 V
-40°C ~ 85°C (TA)
Surface Mount
8-WDFN Exposed Pad
8-WSON (6x5)
IS61WV51216EEBLL-10B2LI-TR
ISSI, Integrated Silicon Solution Inc

IC SRAM 8M PARALLEL 48TFBGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 8Mb (512K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 10ns
  • Access Time: 10ns
  • Voltage - Supply: 2.4 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFBGA
  • Supplier Device Package: 48-TFBGA (6x8)
pacchetto: 48-TFBGA
Azione3.296
SRAM
SRAM - Asynchronous
8Mb (512K x 16)
Parallel
-
10ns
10ns
2.4 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
48-TFBGA
48-TFBGA (6x8)
W632GG8MB-09
Winbond Electronics

IC DRAM 2G PARALLEL 1066MHZ

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3
  • Memory Size: 2Gb (128M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 1066MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 20ns
  • Voltage - Supply: 1.425 V ~ 1.575 V
  • Operating Temperature: 0°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 78-VFBGA
  • Supplier Device Package: 78-VFBGA (10.5x8)
pacchetto: 78-VFBGA
Azione7.328
DRAM
SDRAM - DDR3
2Gb (128M x 16)
Parallel
1066MHz
-
20ns
1.425 V ~ 1.575 V
0°C ~ 95°C (TC)
Surface Mount
78-VFBGA
78-VFBGA (10.5x8)
S29GL032N90TAI010
Cypress Semiconductor Corp

IC FLASH 32M PARALLEL 56TSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 32Mb (4M x 8, 2M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 90ns
  • Access Time: 90ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 56-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 56-TSOP
pacchetto: 56-TFSOP (0.724", 18.40mm Width)
Azione3.424
FLASH
FLASH - NOR
32Mb (4M x 8, 2M x 16)
Parallel
-
90ns
90ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
56-TFSOP (0.724", 18.40mm Width)
56-TSOP
7024S35JI
IDT, Integrated Device Technology Inc

IC SRAM 64K PARALLEL 84PLCC

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 64Kb (4K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 35ns
  • Access Time: 35ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 84-LCC (J-Lead)
  • Supplier Device Package: 84-PLCC (29.21x29.21)
pacchetto: 84-LCC (J-Lead)
Azione7.024
SRAM
SRAM - Dual Port, Asynchronous
64Kb (4K x 16)
Parallel
-
35ns
35ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
84-LCC (J-Lead)
84-PLCC (29.21x29.21)
MTFC32GAMALAM-WT
Micron Technology Inc.

IC FLASH 256G MMC

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 256Gb (32G x 8)
  • Memory Interface: MMC
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -25°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione7.216
FLASH
FLASH - NAND
256Gb (32G x 8)
MMC
-
-
-
-
-25°C ~ 85°C (TA)
-
-
-
MT44K64M18RB-093F:A
Micron Technology Inc.

RLDRAM 3 1.125G 64MX18 TBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: DRAM
  • Memory Size: 1.125Gb (64Mb x 18)
  • Memory Interface: Parallel
  • Clock Frequency: 1067MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 7.5ns
  • Voltage - Supply: 1.28 V ~ 1.42 V
  • Operating Temperature: 0°C ~ 95°C (TC)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione7.568
DRAM
DRAM
1.125Gb (64Mb x 18)
Parallel
1067MHz
-
7.5ns
1.28 V ~ 1.42 V
0°C ~ 95°C (TC)
-
-
-
CY15B108QI-20LPXI
Cypress Semiconductor Corp

IC FRAM 8MBIT 20MHZ 8GQFN

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione3.616
-
-
-
-
-
-
-
-
-
-
-
-
24CS512-I-MS
Microchip Technology

IC EEPROM 512KBIT I2C 8MSOP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 512Kbit
  • Memory Interface: I2C
  • Clock Frequency: 3.4 MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 400 ns
  • Voltage - Supply: 1.7V ~ 5.5V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
  • Supplier Device Package: 8-MSOP
pacchetto: -
Azione900
EEPROM
EEPROM
512Kbit
I2C
3.4 MHz
5ms
400 ns
1.7V ~ 5.5V
-40°C ~ 85°C (TA)
Surface Mount
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
8-MSOP
SM671PBC-BFST
Silicon Motion, Inc.

IC FLASH 512GBIT UFS3.1 153BGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND (TLC)
  • Memory Size: 512Gbit
  • Memory Interface: UFS3.1
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -40°C ~ 105°C
  • Mounting Type: Surface Mount
  • Package / Case: 153-TBGA
  • Supplier Device Package: 153-BGA (11.5x13)
pacchetto: -
Request a Quote
FLASH
FLASH - NAND (TLC)
512Gbit
UFS3.1
-
-
-
-
-40°C ~ 105°C
Surface Mount
153-TBGA
153-BGA (11.5x13)
MR25H256AMDFR
Everspin Technologies Inc.

IC RAM 256KBIT SPI 40MHZ 8DFN

  • Memory Type: Non-Volatile
  • Memory Format: RAM
  • Technology: MRAM (Magnetoresistive RAM)
  • Memory Size: 256Kbit
  • Memory Interface: SPI
  • Clock Frequency: 40 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 9 ns
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-VDFN Exposed Pad
  • Supplier Device Package: 8-DFN-EP, Small Flag (5x6)
pacchetto: -
Request a Quote
RAM
MRAM (Magnetoresistive RAM)
256Kbit
SPI
40 MHz
-
9 ns
2.7V ~ 3.6V
-40°C ~ 125°C (TA)
Surface Mount
8-VDFN Exposed Pad
8-DFN-EP, Small Flag (5x6)
FM24C02UMT8X
Fairchild Semiconductor

IC EEPROM 2KBIT I2C 100KHZ 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 2Kbit
  • Memory Interface: I2C
  • Clock Frequency: 100 kHz
  • Write Cycle Time - Word, Page: 15ms
  • Access Time: 3.5 µs
  • Voltage - Supply: 4.5V ~ 5.5V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
pacchetto: -
Request a Quote
EEPROM
EEPROM
2Kbit
I2C
100 kHz
15ms
3.5 µs
4.5V ~ 5.5V
0°C ~ 70°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
MT62F1G16D1DS-023-IT-B-TR
Micron Technology Inc.

LPDDR5 16GBIT 16 315/315 TFBGA 1

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR5
  • Memory Size: 16Gbit
  • Memory Interface: Parallel
  • Clock Frequency: 4.266 GHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.05V
  • Operating Temperature: -40°C ~ 95°C
  • Mounting Type: Surface Mount
  • Package / Case: 200-WFBGA
  • Supplier Device Package: 200-WFBGA (10x14.5)
pacchetto: -
Request a Quote
DRAM
SDRAM - Mobile LPDDR5
16Gbit
Parallel
4.266 GHz
-
-
1.05V
-40°C ~ 95°C
Surface Mount
200-WFBGA
200-WFBGA (10x14.5)