Immagine |
Numero di parte |
Produttore |
Descrizione |
pacchetto |
Azione |
Quantità |
Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microsemi Corporation |
DIODE GEN PURP 600V 3A D5B
|
pacchetto: SQ-MELF, B |
Azione7.616 |
|
600V | 3A | 1.2V @ 9A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 600V | - | Surface Mount | SQ-MELF, B | D-5B | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 400V 3A AXIAL
|
pacchetto: B, Axial |
Azione6.480 |
|
400V | 3A | 1.2V @ 9A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 400V | - | Through Hole | B, Axial | - | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 500V 3A AXIAL
|
pacchetto: B, Axial |
Azione6.744 |
|
500V | 3A | 1.5V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | 1µA @ 500V | - | Through Hole | B, Axial | - | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE SW 85V 200MA DO35
|
pacchetto: DO-204AH, DO-35, Axial |
Azione11.736 |
|
85V | 200mA | 1.1V @ 400mA | Small Signal =< 200mA (Io), Any Speed | 10ns | 100µA @ 50V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 200°C |
||
Microsemi Corporation |
DIODE SW 85V 200MA DO35
|
pacchetto: DO-204AH, DO-35, Axial |
Azione4.400 |
|
85V | 200mA | 1.1V @ 400mA | Small Signal =< 200mA (Io), Any Speed | 10ns | 100µA @ 50V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE SCHOTTKY 60V 5A POWERMITE3
|
pacchetto: Powermite?3 |
Azione6.848 |
|
60V | 5A | 690mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 60V | 150pF @ 4V, 1MHz | Surface Mount | Powermite?3 | Powermite 3 | -55°C ~ 125°C |
||
Microsemi Corporation |
DIODE GEN PURP 150V 2.5A DO216
|
pacchetto: DO-216AA |
Azione5.104 |
|
150V | 2.5A | 975mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 2µA @ 150V | - | Surface Mount | DO-216AA | DO-216 | -55°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 200V 3A AXIAL
|
pacchetto: Axial |
Azione6.552 |
|
200V | 3A | 1.5V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 1µA @ 200V | - | Through Hole | Axial | B, Axial | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 200V 1A AXIAL
|
pacchetto: A, Axial |
Azione22.644 |
|
200V | 1A | 1.6V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 500nA @ 200V | 45pF @ 12V, 1MHz | Through Hole | A, Axial | - | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 75V 200MA DO213AA
|
pacchetto: DO-213AA |
Azione8.292 |
|
75V | 200mA | 1.2V @ 50mA | Small Signal =< 200mA (Io), Any Speed | 20ns | 500nA @ 75V | 4pF @ 0V, 1MHz | Surface Mount | DO-213AA | DO-213AA | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 600V 15A TO247
|
pacchetto: TO-247-3 |
Azione192.744 |
|
600V | 15A | 2.4V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 19ns | 25µA @ 600V | - | Through Hole | TO-247-3 | TO-247 [B] | -55°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 600V 30A TO220
|
pacchetto: TO-220-2 |
Azione25.368 |
|
600V | 30A | 2.4V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 25µA @ 600V | - | Through Hole | TO-220-2 | TO-220 [K] | -55°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 75V 200MA DO35
|
pacchetto: DO-204AH, DO-35, Axial |
Azione1.260.300 |
|
75V | 200mA | 1.2V @ 50mA | Small Signal =< 200mA (Io), Any Speed | 20ns | 500nA @ 75V | 4pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 (DO-204AH) | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 400V 3A AXIAL
|
pacchetto: B, Axial |
Azione6.928 |
|
400V | 3A | 1.5V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 1µA @ 400V | 165pF @ 4V | Through Hole | B, Axial | - | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE SCHOTTKY 45V 1A DO41
|
pacchetto: DO-204AL, DO-41, Axial |
Azione6.132 |
|
45V | 1A | 490mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50µA @ 45V | 70pF @ 5V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 125°C |
||
Microsemi Corporation |
DIODE SCHOTTKY 30V 60A DO203AB
|
pacchetto: DO-203AB, DO-5, Stud |
Azione5.376 |
|
30V | 60A (DC) | 480mV @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5mA @ 30V | - | Stud Mount | DO-203AB, DO-5, Stud | DO-203AB (DO-5) | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE SCHOTTKY 100V 60A DO5
|
pacchetto: DO-203AB, DO-5, Stud |
Azione4.128 |
|
100V | 60A (DC) | - | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 100V | - | Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 600V 35A DO5
|
pacchetto: DO-203AB, DO-5, Stud |
Azione6.540 |
|
600V | 35A | 1.4V @ 110A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10µA @ 600V | - | Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 200V 30A DO4
|
pacchetto: DO-203AA, DO-4, Stud |
Azione6.960 |
|
200V | 30A | 975mV @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 15µA @ 200V | 140pF @ 10V, 1MHz | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-4 | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE SCHOTTKY 45V 54A DO5
|
pacchetto: DO-203AB, DO-5, Stud |
Azione6.608 |
|
45V | 54A | 820mV @ 120A | Fast Recovery =< 500ns, > 200mA (Io) | - | 2mA @ 45V | 3000pF @ 5V, 1MHz | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -55°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 1KV 3A AXIAL
|
pacchetto: Axial |
Azione7.032 |
|
1000V | 3A | 1V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 25µA @ 1000V | - | Through Hole | Axial | - | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 300V 3A AXIAL
|
pacchetto: B, Axial |
Azione9.228 |
|
300V | 3A | 1.25V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 20µA @ 300V | - | Through Hole | B, Axial | - | -55°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 100V 2.5A A-MELF
|
pacchetto: SQ-MELF, A |
Azione7.392 |
|
100V | 2.5A | - | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 2µA @ 100V | 3.5pF @ 6V, 1MHz | Surface Mount | SQ-MELF, A | A-MELF | 150°C (Max) |
||
Microsemi Corporation |
DIODE GEN PURP 150V 2.5A A-MELF
|
pacchetto: SQ-MELF, A |
Azione5.552 |
|
150V | 2.5A | 975mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 2µA @ 150V | - | Surface Mount | SQ-MELF, A | A-MELF | 175°C (Max) |
||
Microsemi Corporation |
DIODE GEN PURP 200V 1A AXIAL
|
pacchetto: A, Axial |
Azione6.036 |
|
200V | 1A | 1.25V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 200V | - | Through Hole | A, Axial | - | -55°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 150V 850MA AXIAL
|
pacchetto: A, Axial |
Azione3.792 |
|
150V | 850mA | 2.04V @ 9.4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 1µA @ 150V | - | Through Hole | A, Axial | A-PAK | -65°C ~ 155°C |
||
Microsemi Corporation |
DIODE GEN PURP 600V 500MA D5A
|
pacchetto: SQ-MELF, A |
Azione5.200 |
|
600V | 500mA (DC) | 1V @ 400mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 50nA @ 600V | - | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 100V 1A AXIAL
|
pacchetto: A, Axial |
Azione6.832 |
|
100V | 1A | 975mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 2µA @ 100V | - | Through Hole | A, Axial | - | -55°C ~ 175°C |