Immagine |
Numero di parte |
Produttore |
Descrizione |
pacchetto |
Azione |
Quantità |
Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microsemi Corporation |
DIODE GEN PURP 600V 1A AXIAL
|
pacchetto: A, Axial |
Azione7.776 |
|
600V | 1A | 1.6V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | 500nA @ 800V | - | Through Hole | A, Axial | - | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 400V 60A TO247
|
pacchetto: TO-247-2 |
Azione5.792 |
|
400V | 60A | 1.5V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 37ns | 250µA @ 400V | - | Through Hole | TO-247-2 | TO-247 [B] | -55°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 1KV 60A TO247
|
pacchetto: TO-247-2 |
Azione6.264 |
|
1000V | 60A | 3V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 255ns | 100µA @ 1000V | - | Through Hole | TO-247-2 | TO-247 [B] | -55°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 200V 30A TO247
|
pacchetto: TO-247-2 |
Azione10.632 |
|
200V | 30A | 1.3V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 24ns | 250µA @ 200V | - | Through Hole | TO-247-2 | TO-247 [B] | -55°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 1.2KV 30A TO247
|
pacchetto: TO-247-2 |
Azione49.356 |
|
1200V | 30A | 3.3V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 320ns | 100µA @ 1200V | - | Through Hole | TO-247-2 | TO-247 [B] | -55°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 1.2KV 15A TO247
|
pacchetto: TO-247-3 |
Azione31.800 |
|
1200V | 15A | 3.3V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 240ns | 100µA @ 1200V | - | Through Hole | TO-247-3 | TO-247 [B] | -55°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 1KV 15A TO247
|
pacchetto: TO-247-3 |
Azione3.840 |
|
1000V | 15A | 3V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 235ns | 100µA @ 1000V | - | Through Hole | TO-247-3 | TO-247 [B] | -55°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 1.2KV 15A TO220
|
pacchetto: TO-220-3 |
Azione6.176 |
|
1200V | 15A | 2.5V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 260ns | 250µA @ 1200V | - | Through Hole | TO-220-3 | TO-220 [K] | -55°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 1.2KV 15A TO220
|
pacchetto: TO-220-2 |
Azione51.228 |
|
1200V | 15A | 3.3V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 240ns | 100µA @ 1200V | - | Through Hole | TO-220-2 | TO-220 [K] | -55°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 1KV 15A TO220
|
pacchetto: TO-220-3 |
Azione9.024 |
|
1000V | 15A | 3V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 235ns | 100µA @ 1000V | - | Through Hole | TO-220-3 | TO-220 [K] | -55°C ~ 175°C |
||
Microsemi Corporation |
DIODE MODULE 400V 500A LP4
|
pacchetto: LP4 |
Azione7.056 |
|
400V | 500A | 1.5V @ 500A | Fast Recovery =< 500ns, > 200mA (Io) | 120ns | 2.5mA @ 400V | - | Chassis Mount | LP4 | LP4 | - |
||
Microsemi Corporation |
DIODE SCHOTTKY 20V 75MA DO213AA
|
pacchetto: DO-213AA |
Azione4.688 |
|
20V | 75mA | 1V @ 35mA | Small Signal =< 200mA (Io), Any Speed | - | 150nA @ 16V | 2pF @ 0V, 1MHz | Surface Mount | DO-213AA | DO-213AA | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 100V 6A AXIAL
|
pacchetto: Axial |
Azione7.888 |
|
100V | 6A | 925mV @ 6A | Standard Recovery >500ns, > 200mA (Io) | 30ns | 5µA @ 100V | - | Through Hole | Axial | Axial | -55°C ~ 175°C |
||
Microsemi Corporation |
DIODE SCHOTTKY 1.2KV 99A D3PAK
|
pacchetto: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
Azione5.616 |
|
1200V | 99A (DC) | 1.8V @ 30A | No Recovery Time > 500mA (Io) | 0ns | 600µA @ 1200V | 2100pF @ 0V, 1MHz | Surface Mount | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | D3Pak | -55°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 400V 1A AXIAL
|
pacchetto: A, Axial |
Azione6.804 |
|
400V | 1A | 1.25V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 400V | - | Through Hole | A, Axial | - | -55°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 150V 2.5A AXIAL
|
pacchetto: A, Axial |
Azione5.184 |
|
150V | 2.5A | 975mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 2µA @ 150V | - | Through Hole | A, Axial | - | 175°C (Max) |
||
Microsemi Corporation |
DIODE GEN PURP 125V 300MA D5D
|
pacchetto: SQ-MELF, D |
Azione6.516 |
|
125V | 300mA | 1.2V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 6ns | 50nA @ 20V | 5pF @ 0V, 1MHz | Surface Mount | SQ-MELF, D | D-5D | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 400V 3A D5B
|
pacchetto: SQ-MELF, B |
Azione7.664 |
|
400V | 3A | 1.2V @ 9A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 400V | - | Surface Mount | SQ-MELF, B | D-5B | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 1KV 1A AXIAL
|
pacchetto: A, Axial |
Azione5.344 |
|
1000V | 1A | 1.3V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 500nA @ 1000V | - | Through Hole | A, Axial | - | -65°C ~ 200°C |
||
Microsemi Corporation |
DIODE GEN PURP 75V 300MA D5D
|
pacchetto: SQ-MELF, D |
Azione5.392 |
|
75V | 300mA (DC) | 1V @ 200mA | Fast Recovery =< 500ns, > 200mA (Io) | 4ns | 100nA @ 50V | - | Surface Mount | SQ-MELF, D | D-5D | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 600V 3A AXIAL
|
pacchetto: B, Axial |
Azione4.928 |
|
600V | 3A | 1.2V @ 9A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 600V | - | Through Hole | B, Axial | - | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 200V 1A AXIAL
|
pacchetto: A, Axial |
Azione6.416 |
|
200V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 1µA @ 200V | - | Through Hole | A, Axial | - | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 200V 1A AXIAL
|
pacchetto: A, Axial |
Azione7.504 |
|
200V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 1µA @ 200V | - | Through Hole | A, Axial | - | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 50V 200MA DO35
|
pacchetto: DO-204AH, DO-35, Axial |
Azione6.816 |
|
50V | 200mA | 1V @ 200mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 100nA @ 50V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 75V 200MA DO35
|
pacchetto: DO-204AH, DO-35, Axial |
Azione6.480 |
|
75V | 200mA | 1.2V @ 50mA | Small Signal =< 200mA (Io), Any Speed | 20ns | 500nA @ 75V | 2.8pF @ 1.5V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 (DO-204AH) | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 1KV 15A TO220
|
pacchetto: TO-220-3 |
Azione4.912 |
|
1000V | 15A | 2.3V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 260ns | 250µA @ 1000V | - | Through Hole | TO-220-3 | TO-220 [K] | -55°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 50V 150MA DO35
|
pacchetto: DO-204AH, DO-35, Axial |
Azione8.472 |
|
50V | 150mA | 880mV @ 20mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 50nA @ 50V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 50V 200MA DO35
|
pacchetto: DO-204AH, DO-35, Axial |
Azione20.316 |
|
50V | 200mA | 1V @ 200mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 100nA @ 50V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 600V 15A TO220
|
pacchetto: TO-220-2 |
Azione15.696 |
|
600V | 15A | 1.8V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 80ns | 250µA @ 600V | - | Through Hole | TO-220-2 | TO-220 [K] | -55°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 75V 200MA DO35
|
pacchetto: DO-204AH, DO-35, Axial |
Azione294.348 |
|
75V | 200mA | 1.2V @ 100mA | Small Signal =< 200mA (Io), Any Speed | 20ns | 500nA @ 75V | 4pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |